Abstract: A glass panel unit manufacturing method includes a bonding step, a pressure reducing step, and a sealing step. The bonding step includes bonding together a first substrate and a second substrate with a first sealant to create an inner space. The pressure reducing step includes producing a reduced pressure in the inner space through an exhaust port that the first substrate has. The sealing step includes melting a second sealant inserted into the exhaust port by locally heating the second sealant, and deforming the second sealant by pressing the second sealant toward the second substrate, to seal the exhaust port up with the second sealant melted and deformed.

Abstract: The invention relates to an electrical functional component having at least one electrically conductive conductor strip, at least one contact pin being arranged on the conductor strip, said contact pin being able to be contacted with a complementary contact element, and a contact zone being provided between the conductor strip and the contact pin, said contact zone electrically connecting the conductor strip and the contact pin to each other, the electrically conductive contact zone being formed in an annular cold-pressure-welded transition zone, the surface material of the conductor strip- and/or the surface material of the contact pin comprising at least one cold-working area in the transition zone, a welding zone being provided at least in sections on or in at least one cold-working zone, the contact pin and the conductor strip being connected to each other in the welding zone in an electrically conductive manner by material bonding.

Abstract: A method for reversibly attaching a phase changing metal to an object, the method comprising the steps of: providing a substrate having at least one surface at which the phase changing metal is attached, heating the phase changing metal above a phase changing temperature at which the phase changing metal changes its phase from solid to liquid, bringing the phase changing metal, when the phase changing metal is in the liquid phase or before the phase changing metal is brought into the liquid phase, into contact with the object, permitting the phase changing metal to cool below the phase changing temperature, whereby the phase changing metal becomes solid and the object and the phase changing metal become attached to each other, reheating the phase changing metal above the phase changing temperature to liquefy the phase changing metal, and removing the substrate from the object, with the phase changing metal separating from the object and remaining with the substrate.

Abstract: A flux formulation includes an activator and a protic solvent. The activator may be glutaric acid, levulinic acid, 2-ketobutyric acid, 2-oxovaleric acid, or mixtures thereof. Suitable protic solvents include alkanediol, alkoxy propanol and alkoxy ethanol. The flux formulation may be a no-clean flux formulation that may be used in the soldering of electronic circuit board assemblies, for example, in conjunction with a support fixture having a planar back surface that minimizes vibrations during processing that might otherwise cause misalignment between a chip and a substrate prior to solder reflow.

Abstract: Provided in one embodiment is a method of forming a connection mechanism in or on a bulk-solidifying amorphous alloy by casting in or on, or forming with the bulk-solidifying amorphous alloy, a machinable metal. The connection mechanism can be formed by machining the machinable metal.

Abstract: A keypad with a contact element in a form of a contact pill for intermittent contacting of printed circuit board (PCB) contacts on a PCB, where the contact element includes a plurality of irregularly shaped electrically conductive particles, and where the contact element is connected to the keypad or to an element of the keypad.

Abstract: A method for cold-forging a thin-walled portion by which a thin-walled portion having a set thickness is formed directly from a metal base plate having a sufficiently large thickness and an explosion-proof valve are provided. Blade side surfaces of upper and lower dies for shearing the metal base plate are set in an overlapping manner with a predetermined clearance ? therebetween. Sheared surfaces are formed with the blade side surfaces of the upper and lower dies in the metal base plate along a processing direction while leaving the set thickness t2 therebetween and the metal base plate is compressed by the overlapped portions until work-hardened to form the thin-walled portion with the horizontal width ? and the set thickness t2 between the sheared surfaces.

Abstract: The disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate.

Abstract: A method for alignment and contact-making of a first substrate with a second substrate using several detection units as well as a corresponding device.

Abstract: Electronic assemblies and their manufacture are described. One embodiment relates to a method including depositing an organic thin film layer on metal bumps on a semiconductor wafer, the organic thin film layer also being formed on a surface adjacent to the metal bumps on the wafer. The wafer is diced into a plurality of semiconductor die structures, the die structures including the organic thin film layer. The semiconductor die structures are attached to substrates, wherein the attaching includes forming a solder bond between the metal bumps on a die structure and bonding pads on a substrate, and wherein the solder bond extends through the organic thin film layer. The organic thin film layer is then exposed to a plasma. Other embodiments are described and claimed.

Abstract: A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is joined to the second metal layer using a cold welding process wherein one of the first substrate and the second substrate includes a semiconductor channel layer for forming a transistor device.

Abstract: In a high strength and high electrical conductive nano crystalline grain multi-layer copper alloy sheet, a plurality of high strength and high electrical conductive nano crystalline grain multi-layer sheets manufactured by roll-bonding an oxygen free copper (OFC) alloy sheet and a deoxidized low-phosphorous copper (DLP) alloy sheet are plastically bonded by roll-bonding method so that an OFC alloy layer and a DLP alloy layer are alternated to each other to have electrical conductivity of 85 IACS (%) or more and tensile strength of 500 MPa or more.

Abstract: A composite steel plate includes at least two steel sheets rolled to form a plate. One of the sheets has a composition that varies in a depthwise direction, between nanocrystalline and micron grained. The plate is made by treating a steel sheet to produce a composition in the sheet that varies in a depthwise direction of the sheet between nanocrystalline and micron grained, stacking the treated sheet with at least one other steel sheet, and rolling the stacked sheets to form the plate.

Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding not requiring a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded requires a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Abstract: A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Abstract: A metal laminate is made by first laying at least one first metal strip of at least one first metal having a thickness of 40 ?m to 750 ?m on at least one second metal strip of a second metal different from the first metal to form a multilayer stack having a total thickness between 2 mm and 15 mm. Then the first and second strips of the multilayer stack are bonded together by rolling. Finally a finished laminate is formed by reducing a thickness of the bonded-together first and second strips by rolling in at least one pass such that the one first metal strip has a thickness of 0.5 to 10 ?m.

Abstract: A method of removing oxidation from certain metallic contact surfaces utilizing a combination of relatively simple and inexpensive off-the-shelf equipment and specific chemistry. The method being a very rapid dry process which does not require a vacuum or containment chamber, or toxic gasses/chemicals, and does not damage sensitive electronic circuits or components. Additionally, the process creates a passivation layer on the surface of the metallic contact which inhibits further oxidation while allowing rapid and complete bonding, even many hours after surface treatment, without having to remove the passivation layer. The process utilizes a room-ambient plasma applicator with hydrogen, nitrogen, and inert gasses.

Abstract: A cooking vessel, such as kettle, frying pan or cooking pot, has a bottom part suitable for heating by induction. In solutions known before, an attachment of ferromagnetic plate, placed at the bottom, to blank container is multistage, demanding exceptional precision and/or non-reliable. In addition, in solutions known before, stainless steel is used; to which use some disadvantages are related. In the present invention a plate is used as ferromagnetic member, which is coated, at least from its one surface, by another material, such as aluminum. Ferromagnetic piece is attached e.g. by pressure welding to blank container. In solution provided by the invention it is possible to use an iron plate as ferromagnetic material.

Abstract: Compression cold welding methods, joint structures, and hermetically sealed containment devices are provided. The method includes providing a first substrate having at least one first joint structure which comprises a first joining surface, which surface comprises a first metal; providing a second substrate having at least one second joint structure which comprises a second joining surface, which surface comprises a second metal; and compressing together the at least one first joint structure and the at least one second joint structure to locally deform and shear the joining surfaces at one or more interfaces in an amount effective to form a metal-to-metal bond between the first metal and second metal of the joining surfaces. Overlaps at the joining surfaces are effective to displace surface contaminants and facilitate intimate contact between the joining surfaces without heat input. Hermetically sealed devices can contain drug formulations, biosensors, or MEMS devices.

Abstract: The invention relates to a method for producing a metal component, wherein a raw material (4, 34, 42, 74) is provided, the raw material (4, 34, 42, 74) is stamped and is further processed following the stamping process to form a component (90, 108, 114). The component (90, 108, 114) has at least partially stamped areas (16, 36, 48, 98), and the raw material (4, 34, 42, 74) is hot-stamped. The invention further relates to the use of a hot-stamped metal component, which is preferably produced using a method according to the invention, in a motor vehicle body, in particular as a reinforcing element in a B-column (114), a sill, or a longitudinal beam.

Abstract: A swelling element packer is made with internal rings that are either split or scrolled. After the swelling element is built on a temporary mandrel a longitudinal seam of a variety of designs is cut through the element. This allows the rapid deployment of the element on the tubular that will be a part of a string and will serve as the final mandrel. The assembly is then magnetic pulse welded or crimped so as to urge the open ends of the rings to move toward each other and become secured to each other and further opening the possibility of attaching parts on the ring itself to the underlying tubular by displacing or otherwise removing the swelling material that was between the ring and the final mandrel when the magnetic pulse process began. The rings can be embedded wholly within the element or can extend beyond the opposed ends or combinations of the two.

Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Abstract: A metal substrate with an insulation layer has a metallic substrate having at least an aluminum base, and an insulation layer formed on the aluminum base of the metallic substrate. The insulation layer is a anodized film of aluminum that has a porous structure having plural pores and a Martens hardness of 1000 N/mm2 to 3500 N/mm2. A ratio of an average pore size of the plural pores to an average wall thickness of the plural pores ranges from 0.2 to 0.5.

Abstract: A method for solid state bonding of a plurality of metallic layers and devices made by that method are disclosed. First and second metallic layers are solid state bonded utilizing a protective coating on the non-bonded surfaces that engage the pressure applying appliance to prevent the surfaces from adhering to the pressure applying appliance and to protect the surfaces from imprinting during the bonding process. The invention can be used to fabricate micro-channel devices with smooth outer surfaces and eliminate mold release compounds utilized in conventional bonding procedures.

Abstract: The invention relates to a method for producing an aluminum composite material in which a cladding sheet is placed at least onto one side of a core ingot, and in which the core ingot with cladding sheets in place is subjected to several roll passes, as well as a method for producing cladding sheets from an ingot. According to the invention, known methods are simplified and improved in that the cladding sheets are cut off an ingot.

Abstract: A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Abstract: A method of removing oxidation from certain metallic contact surfaces utilizing a combination of relatively simple and inexpensive off-the-shelf equipment and specific chemistry. The method being a very rapid dry process which does not require a vacuum or containment chamber, or toxic gasses/chemicals, and does not damage sensitive electronic circuits or components. Additionally, the process creates a passivation layer on the surface of the metallic contact which inhibits further oxidation while allowing rapid and complete bonding, even many hours after surface treatment, without having to remove the passivation layer. The process utilizes a room-ambient plasma applicator with hydrogen, nitrogen, and inert gasses.

Abstract: A swelling element packer is made with internal rings that are either split or scrolled. After the swelling element is built on a temporary mandrel a longitudinal seam of a variety of designs is cut through the element. This allows the rapid deployment of the element on the tubular that will be a part of a string and will serve as the final mandrel. The assembly is then magnetic pulse welded or crimped so as to urge the open ends of the rings to move toward each other and become secured to each other and further opening the possibility of attaching parts on the ring itself to the underlying tubular by displacing or otherwise removing the swelling material that was between the ring and the final mandrel when the magnetic pulse process began. The rings can be embedded wholly within the element or can extend beyond the opposed ends or combinations of the two.

Abstract: A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Abstract: The present disclosure relates to a method for fabricating the above-described a magnesium-based composite material. The method includes providing at least two magnesium-based plates, providing at least one nanoscale reinforcement film, sandwiching the at least one nanoscale reinforcement film between the at least two magnesium-based plates to form a preform, and hot rolling the preform to achieve the magnesium-based composite material.

Abstract: An improved apparatus for bonding semiconductor structures includes equipment for treating a first surface of a first semiconductor structure and a first surface of a second semiconductor structure with formic acid, equipment for positioning the first surface of the first semiconductor structure directly opposite and in contact with the first surface of the second semiconductor structure and equipment for forming a bond interface between the treated first surfaces of the first and second semiconductor structures by pressing the first and second semiconductor structures together. The equipment for treating the surfaces of the first and second semiconductor structures with formic acid includes a sealed tank filled partially with liquid formic acid and partially with formic acid vapor. Opening an inlet valve connects the tank to a nitrogen gas source and allows nitrogen gas to flow through the tank. Opening an outlet valve allows a mixture of formic acid vapor with nitrogen gas to flow out of the tank.

Abstract: A method for forming alloy deposits at selected areas on a receiving substrate includes the steps of: providing an alloy carrier including at least a first decal including a first plurality of openings and a second decal including a second plurality of openings, the first and second decals being arranged such that each of the first plurality of openings is in alignment with a corresponding one of the second plurality of openings; filling the first and second plurality of openings with molten alloy; cooling the molten alloy to thereby form at least first and second plugs, the first plug having a first surface and a second surface substantially parallel to one another, the second plug having a third surface and a fourth surface substantially parallel to one another; removing at least one of the first and second decals to at least partially expose the first and second plugs; aligning the alloy carrier with the receiving substrate so that the first and second plugs correspond to the selected areas on the receivin

Abstract: A method for producing a metal tube including arranging at least one metal profile to form at least one channel for conduction of a fluid. The at least one metal profiled is fed into a clad-rolling mill. A first and second portion of the at least one metal profile are clad-rolled to each other, so that the first and the second portions are joined with each other. The first and the second portions form a seal that holds the at least one metal profile together and seals at least part of the channel. A clad-rolling mill is adapted to produce a metal tube and a metal tube.

Abstract: A cold welded hermetic micro or nano package sealed in an inert atmosphere with optional force maintenance means for ensuring permanent closure. A package cap 410 coated with precursor weld material is sealed to a package base 405 containing integral device 445 then cold welded with an external force mechanism to compress and flow cold seal preform material 435 creating a hermetic peripheral seal in an inert or vacuum atmosphere. Arrays of devices can be sealed with individual caps or arrays of caps which are interconnected.

Abstract: A method of forming a sputtering target assembly and the sputtering target assembly made therefrom are described. The method includes bonding a sputtering target to a backing plate at a low temperature. Also described is a method of forming a sputtering target assembly such that a gap is formed between the sputtering target and the backing plate. Also described is a method of forming a sputtering target assembly providing a mechanism to prevent unintended sputtering into the backing plate.

Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Abstract: A hollow-bodied component, which includes at least two die-cast shell elements (1, 2), is suitable in particular for use as a steering component in motor vehicle running-gear assemblies. The hollow-bodied component has a connection zone (5, 6, 18, 19) configured on the shell elements (1, 2) to be interconnected. One connection zone (5) has one first contact area (7) with an essentially U-shaped cross-section that is located on the respective shell element (1) and the other connection zone has at least one strut-type second contact area (8) that engages in the space in the U-shaped first contact area (7) and that is located on the respective other shell element (2). The connection zones (5, 6, 18, 19) are joined in a force fit in a cold welding process that uses a contact pressure (F1, F2), whose value is a multiple of the separating force components (Fr) that act on the connection zones (5, 6, 18, 19) during operation. A method is provided for producing the component.

Abstract: A semiconductor device with improved bondability between a wire and a bump and cutting property of the wire to improve the bonding quality. In the semiconductor device, a wire is stacked on a pad as a second bonding point to form a bump having a sloped wedge and a first bent wire convex portion, and a wire is looped from a lead as a first bonding point to the bump and is pressed to the sloped wedge of the bump with a face portion of a tip end of a capillary to bond the wire to the bump. At the same time, the wire is pressed to the first bent wire convex portion using an inner chamfer of a bonding wire hole in the capillary to form a wire bent portion having a bow-shaped cross section. The wire is pulled up and cut at the wire bent portion.

Abstract: A method of attaching a solder element to a contact and the contact assembly formed thereby. The contact assembly is used in a connector. The solder element is either staked or stapled to the contact. The solder element can take a variety of shapes and disclosed herein is a tear-drop shape, a “wolf's head” shape and a circular shape. An over-stress feature is also provided for when the contact assembly is mounted to a printed wiring board.

Abstract: A method of bonding dissimilar metals, a bonding structure formed by such a method and a bonding apparatus for performing such a method. The resulting bond is capable of preventing corrosion (e.g., electric corrosion) resulting from contact of the dissimilar metals and obtains a dissimilar material joint exhibiting anti-corrosive property and bonding strength at low costs. The method includes overlapping two materials made from dissimilar metals having a seal material interposed therebetween and discharging the seal material from a bonding interface and bonding the two materials in direct contact with each other.

Abstract: The present application pertains to unconventional sputter target/backing plate assemblies (10) for high power operation and to the low temperature method of making them. The sputter target/backing plate assemblies (10) comprise targets (12) and backing plates (16) having dissimilar thermal coefficients of expansion. Although the consolidated targets (12) and backing plates (16) have dissimilar thermal coefficients of expansion, they are able to be bonded together and used at high sputtering temperatures without bowing or bending and are able to utilize backing plates (16) normally associated with a specified target metal. In the method of making, a plurality of male projections (16) are formed in one member of the assembly (10) with a plurality of corresponding female grooves (32) formed in the other surface. The assembly (10) is bonded by conventional techniques around an annular zone that surrounds the male (26) and female portions (32).

Abstract: The present invention relates to an improvement in the manufacture of metal blanks, discs, and sputtering targets by flattening only one of the two surfaces of a metal plate. The elimination of flattening the metal plate's second surface results in a significant cost reduction. The metal plate of the present invention preferably has a single-side flatness of 0.005 inches or less, which improves the reliability of the bond between the target blank and a backing plate. Preferred metals include, but are not limited to, tantalum, niobium, titanium, and alloys thereof. The present invention also relates to machining the first side of a metal plate, bonding the first side to a backing plate, and then optionally machining the second side of the metal plate.

Abstract: A low temperature target and backing plate bonding process and assemblies made thereby. A plurality of projections are formed in the harder member of the assembly. The assembly is bonded by conventional techniques around the peripheral assembly boundaries. The assembly is then pressure consolidated at low temperature so that the projections, circumscribed by the bonded zone, penetrate into the softer member promoting the formation of metal to metal cold diffusion type bonds.

Abstract: The present application pertains to unconventional sputter target/backing plate assemblies (10) for high power operation and to the low temperature method of making them. The sputter target/backing plate assemblies (10) comprise targets (12) and backing plates (16) having dissimilar thermal coefficients of expansion. Although the consolidated targets (12) and backing plates (16) have dissimilar thermal coefficients of expansion, they are able to be bonded together and used at high sputtering temperatures without bowing or bending and are able to utilize backing plates (16) normally associated with a specified target metal. In the method of making, a plurality of male projections (16) are formed in one member of the assembly (10) with a plurality of corresponding female grooves (32) formed in the other surface. The assembly (10) is bonded by conventional techniques around an annular zone that surrounds the male (26) and female portions (32).

Abstract: A preferred sputter target assembly (10, 10′) comprises a target (12, 12′), a backing plate (14, 14′) bonded to the target (12, 12′) along an interface (22, 22′) and dielectric particles (20, 20′) between the target (12, 12′) and the backing plate (14, 14′). A preferred method for manufacturing the sputter target assembly (10, 10′) comprises the steps of providing the target (12, 12′) and the backing plate (14, 14′); distributing the dielectric particles (20, 20′) between mating surfaces (24, 26) of the target (12, 12′) and the backing plate (14, 14′), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12′) to the backing plate (14, 14′) along the mating surfaces (24, 26).

Abstract: An improved method for joining mating surfaces of a metallic sputter target and a backing plate of aluminum, aluminum alloy or aluminum matrix composite material to form a sputter target/backing plate assembly comprises the steps of roughening the mating surface of either the sputter target or the backing plate to form a plurality of salient portions; depositing an intermediate layer comprising nickel on that mating surface; pressing the sputter target and the backing plate together along the mating surfaces so as to disrupt the mating surfaces; and holding the sputter target and the backing plate in contact at a temperature just below the melting points of the sputter target and backing plate materials to promote diffusion bonding. In an especially preferred form of the invention, the mating surface on the harder of the sputter target or the backing plate is roughened by machining a series of concentric grooves.

Abstract: Low temperature diffusion bonding methods and target/backing plate assemblies bonded by the methods are disclosed. In accordance with the methods, copper and/or cobalt targets are bonded to backing plate members via the use of an interlayer selected from the group consisting of group Ib or group VIII metals. The interlayer is interposed between intended bonding surfaces of the target and the backing plate, and the assembly is diffusion bonded at low temperatures of about 190° C.-400° C. The method results in increased tensile strength of the bonded assembly while not, in the case of copper targets, resulting in undesirable grain growth. When cobalt targets are bonded in accordance with the invention, desirable magnetic properties, such as magnetic pass through flux, are maintained while a strong bond is achieved.

Abstract: A method and apparatus for smoothing a thick walled portion of a steel pipe produced by pressure-welding two opposite longitudinal edges of an open pipe with a squeeze roll after being subjected to induction heating. Outer and inner reduction rollers pressure sandwiches the thick walled portion from the outer and inner surfaces of the pipe, a support supports the inner reduction roller to be rotatable and containing a water passage for cooling water, a connecting rod connects the support device to a coupler and contains a further water passage for feeding cooling water to the water passage, and an anchor holds the connecting rod. In the method of producing steel pipes two opposite longitudinal edges of the open pipe are preformed before being subjected to the induction heating and thereafter a thick walled portion is smoothed by the above-described.

Abstract: A sputter target assembly includes a cobalt target diffusion bonded to an aluminum or copper backing plate by means of a titanium interlayer. The sputter target assembly may be made by hot vacuum pressing or, preferably, by hot isostatically pressing the target, interlayer and backing plate together. Preferably, the titanium interlayer is provided as a foil, but may also be formed on a mating surface of either the target or the backing plate by electroplating, sputtering, electroless plating, or plasma spraying. The target may be advantageously machined with grooves defining salient points prior to providing the interlayer.