Abstract: An apparatus used for forming stud bumps may be formed by providing a first clamp plate comprising a clamping surface, forming a notcher on the clamping surface, and forming a contact stopper on the clamping surface. The apparatus may include a clamp that includes at least two opposing plates, and at least one of the opposing plates includes a protruding feature that intersects the wire when the wire is clamped forming a first notch in the wire. The method for forming stud bumps includes bonding wire to a bonding surface, releasing the wire from the clamp, passing the wire a notch pitch distance through the clamp, clamping the wire with the clamp forming a second notch in the wire, and breaking the wire leaving a bonded portion of the wire on the bonding surface.

Abstract: A method for joining, assembling, at least two parts made of silicon carbide-based materials by non-reactive brazing is provided. According to the method, the parts are contacted with a non-reactive brazing composition, the assembly formed by the parts and the brazing composition is heated to a brazing temperature sufficient to melt the brazing composition totally or at least partly, and the parts and the brazing composition are cooled so that, after solidification of the brazing composition, a moderately refractory joint is formed; wherein the non-reactive brazing composition is a binary alloy consisting in atomic percentages, of 60% to 66% silicon and 34 to 40% nickel. A brazing composition as defined above is also provided. A paste, suspension of braze alloy comprising a powder of the brazing composition and an organic binder is provided. In addition, a joint and assembly obtained with the foregoing method is provided.

Abstract: This invention relates to a method of fabricating a bonded product comprising at least two components that are bonded together, the method comprising the steps of: a) bringing the components together; and b) heating the components; wherein at least one of the components comprises a nanomaterial and wherein steps (a) and (b) are performed in such a manner that the components are bonded together by heating at least part of the nanomaterial. The method allows the components to be welded together at lower temperatures than for prior art methods. The method also provides a more reliable form of bonding and improves the strength of the bond formed.

Abstract: A tin-lead solder alloy containing copper and optionally silver as its alloying constituents. The solder alloy consists essentially of, by weight, about 55% to about 75% tin, about 11% to about 44% lead, up to about 4% silver, nickel, palladium, platinum and/or gold, greater than 1% to about 10% copper, and incidental impurities. The solder alloys contain a small portion of CuSn intermetallic compounds, and exhibit a melting mechanism in which all but the intermetallic compounds melt within a narrow temperature range, though the actual liquidus temperature of the alloys may be considerably higher, such that the alloys can be treated as requiring peak reflow temperatures of about 250° C. or less. The intermetallic compounds precipitate out to form a diffusion barrier that increases the reliability of solder connections formed therewith.

Abstract: A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000° C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire metallization.

Abstract: Methods for implementing production of an oxide superconductor joined member, excellent in electric current transmission performance, without a need of going through particularly complex steps, are provided. When joining together oxide superconductors by use of a solder composed of an oxide superconducting material, a finally solidified portion of the solder is positioned in a region where a transmission path of electric current flowing between oxide superconductor base materials as joined together is not obstructed by, for example, disposing the solder on a face of the oxide superconductor base materials, other than butting surfaces of the oxide superconductor base materials, so as to straddle both the base materials like bridge-building. Current flow is also not obstructed by, for example, shaping junction faces of the oxide superconductor base materials such that at least portions of the butting surfaces thereof are in the shape of sloped open faces, parting from each other.

Abstract: An electronic control module 100 is provided wherein a power device 102 is secured to a rigidizer, or heat spreader, 110 such that a thermally conductive path is created for a conduction of heat from the power device to the rigidizer. A thermally conductive and electrically insulated interface 208, preferably anodized aluminum, is disposed between device 102 and rigidizer 110 and is solder bonded to each of the device and the rigidizer, facilitating the creation of a thermal path from the device to the rigidizer. In order to solder bond the device to the interface and the interface to the rigidizer, solderable coatings 206, 210, 214 are respectively applied to the surfaces 207 and 209 of the interface and surface 215 of the rigidizer.

Abstract: A semiconductor wafer support assembly and method of fabricating the same. In one embodiment, the method and resulting assembly include attaching a pedestal joining-ring to a bottom surface of a ceramic puck. Low temperature brazing a composite cooling plate structure to the bottom surface of the ceramic puck, where the pedestal joining-ring circumscribes the composite cooling plate structure. Thereafter, a pedestal is electron-beam welded to the pedestal joining-ring. In a second embodiment, for a full area temperature controlled assembly, a method and assembly include a ceramic puck having a wafer support surface, and a composite cooling plate structure having a diameter at least equal to the wafer support surface. A pedestal joining-ring is attached to a bottom surface of the composite cooling plate structure. A bottom surface of the ceramic puck is low temperature brazed to the composite cooling plate structure, and then a pedestal is electron-beam welded to the pedestal joining-ring.

Abstract: In a method of manufacturing composite sheet steel of maraging steel, wherein the composite sheet steel comprises an outer layer and an inner layer, wherein the outer layer is harder than the inner layer and the inner layer is more tenacious than the outer layer, the steel of the inner layer is produced with a chemical composition containing in percent by weight: C≦0.01, Si≦0.1, Mn≦0.1, P≦0.005, S≦0.005, Cu≦0.1, Mo 4.80 to 5.20, Ni 17.5 to 18.5 , Cr≦0.1, Ti 0.55 to 0.70, Co 8.0 to 9.0; and the steel of the outer layer is produced with purification in a zone melting process with a chemical composition containing in percent by weight: C≦0.01, Si<0.1, Mn 0.02 to 0.20, P≦0.005, S≦0.005, Cu 0.01 to 0.20, Mo 4.80 to 5.20, Ni 17.5 to 18.5, Cr 0.01 to 0.20, Ti 1.80 to 1.95, Co 14.0 to 15.5, Al 0.05 to 0.15, with the remainder being Fe and contaminants resulting from the manufacturing process, respectively.

Abstract: The present invention relates to a method and an apparatus for arranging fine balls serving as a ball bump particularly on electrodes on a semiconductor chip, electrodes on a semiconductor-mounting substrate, or electrodes on a semiconductor device. It is made possible to remove small-diameter balls by, firstly, using a pre-arrangement plate for arranging the balls and using two diameters for the ball trap holes of the pre-arrangement plate. Secondly, occurrence of a ball suction abnormality and the time required for sucking the balls is reduced by using the pre-arrangement plate and a ball feeder. Thirdly, a ball suction abnormality to the ball arrangement device is determined by detecting the air flow velocity in an evacuation route of the ball arrangement device.