Superconducting Type Patents (Class 250/336.2)
  • Publication number: 20080197285
    Abstract: Ultrasensitive optical detector with high resolution in time, using a waveguide, and processes for manufacturing this detector This detector, designed to detect at least one photon, comprises a dielectric substrate (2) and at least one detection element on this substrate, designed to generate an electrical signal starting from the energy of the photon(s) received, and a guide element to guide this or these photons the energy of which is then absorbed by the detection element (4) at an absorption zone which is less than 100 nm thick. The detection element is substantially straight on the substrate and is short, and the guide element comprises a single mode light waveguide with strong confinement (6), placed on the detection element. The invention is applicable particularly to detection and localisation of operating defects in a semiconducting circuit.
    Type: Application
    Filed: June 6, 2006
    Publication date: August 21, 2008
    Applicant: Commissariat A L'Energie Atomique
    Inventors: Laurent Frey, Jean-Claude Villegier
  • Patent number: 7319227
    Abstract: A cryogenic detector device includes a sensor based on a low-temperature effect and measures the temperature increase produced by the introduction of energy, such as an X-ray quantum. The smaller the thermal capacity of the sensor, the greater the temperature increase resulting from the introduction of energy and the higher the energy resolution of the sensor. Because the thermal capacity is temperature dependent, the sensor is operated in the range of comparatively small thermal capacities, i.e., in a range between 50 and 400 mK. Contrary to conventional assumptions, it was found that by keeping the three-dimensional size of the individual sensors sufficiently small and by increasing the effective sensor area, acceptable measurement results were achieved even at higher operating temperatures of the sensors in a range between 2.4 and 4.2 degrees Kelvin.
    Type: Grant
    Filed: November 16, 2005
    Date of Patent: January 15, 2008
    Inventor: Jens Hoehne
  • Patent number: 7315025
    Abstract: A practical semiconductor radiation detector capable of collecting electrons rapidly with a large volume is disclosed. A multiple layers of grid electrodes around an anode formed on a semiconductor element limits the generation of the induced charge signal for the anode to the space in the neighborhood of the anode, while at the same time making it possible to collect the electrons rapidly. As a result of limiting the space for generating the induced charge by the grid electrodes, the energy resolution is improved even for a thick semiconductor element. Also, the capability of rapidly collecting the electrons due to the high field strength generated by the grid electrodes makes a sensitive volume of the whole semiconductor and thus achieves a high radiation detection efficiency.
    Type: Grant
    Filed: October 20, 2006
    Date of Patent: January 1, 2008
    Assignee: Hitachi, Ltd.
    Inventors: Kazuma Yokoi, Hiroshi Kitaguchi, Kikuo Umegaki, Kensuke Amemiya, Yuuichirou Ueno, Norihito Yanagita, Shinichi Kojima
  • Patent number: 7274019
    Abstract: A method of controlling the coordinate sensitivity in a superconducting microbolometer employs localized light, heating or magnetic field effects to form normal or mixed state regions on a superconducting film and to control the spatial location. Electron beam lithography and wet chemical etching were applied as pattern transfer processes in epitaxial Y—Ba—Cu—O films. Two different sensor designs were tested: (i) a 3 millimeter long and 40 micrometer wide stripe and (ii) a 1.25 millimeters long, and 50 micron wide meandering-like structure. Scanning the laser beam along the stripe leads to physical displacement of the sensitive area, and, therefore, may be used as a basis for imaging over a broad spectral range. Forming the superconducting film as a meandering structure provides the equivalent of a two-dimensional detector array. Advantages of this approach are simplicity of detector fabrication, and simplicity of the read-out process requiring only two electrical terminals.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: September 25, 2007
    Assignee: UChicago Argonne, LLC
    Inventors: Volodymyr Yefremenko, Eduard Gordiyenko, Olga Pishko, legal representative, Valentyn Novosad, Vitalii Pishko, deceased
  • Patent number: 7241997
    Abstract: A superconducting X-ray detection apparatus has a refrigerator, a cooling head cooled by the refrigerator, and a stacked structure connected to an end portion of the cooling head. The stacked structure comprises a sensor holder, a low-temperature first-stage amplifier connected to the sensor holder, and a superconducting X-ray detector mounted on the low-temperature first-stage amplifier.
    Type: Grant
    Filed: January 11, 2005
    Date of Patent: July 10, 2007
    Assignee: SII NanoTechnology Inc.
    Inventors: Akikazu Odawara, Satoshi Nakayama, Keiichi Tanaka
  • Patent number: 7220965
    Abstract: Prospective readout architecture with Transition Edge Sensor (TES) electrical biasing from the warm readout is introduced. The architecture allows building of large imaging detector arrays with TES. The invention allows an unprecedented combination of imaging and spectrometry features in one radiation detector.
    Type: Grant
    Filed: November 19, 2004
    Date of Patent: May 22, 2007
    Inventor: Vitali Souchkov
  • Patent number: 7132655
    Abstract: A radiation sensor (20) has a substrate (34); an antenna (24) coupled to the substrate (34), a thermal detector unit TDU (22) spaced from the antenna (24) and the substrate (34); and a multi-layered conductive lead (30). The conductive lead (30) physically contacts the antenna (24) and the TDU (22). The conductive lead (30) defines a support layer (44) adjacent to the substrate (34) for structurally supporting the TDU (22) over a cavity defined by the substrate (34), a buffer layer (46) disposed on the support layer (44), and a superconductive layer (48) disposed on the buffer layer (46). The buffer layer has a crystalline structure to facilitate bonding with other layers. A method for making the sensor (20) is disclosed wherein the superconductive layer (48) and the buffer layer (46) are deposited using laser deposit, the buffer layer (46) with ion beam assist for alignment.
    Type: Grant
    Filed: December 2, 2003
    Date of Patent: November 7, 2006
    Assignee: Raytheon Company
    Inventors: Michael D. Jack, Eli E. Gordon
  • Patent number: 7078695
    Abstract: An antenna-coupled microbolometer structure comprises a substrate (301), an antenna (102, 103) supported by the substrate, and a thermally sensitive element (101, 305) connected to the antenna and arranged to dissipate electric currents induced into the antenna. Both the antenna (102, 103) and the thermally sensitive element (101, 305) comprise material that is susceptible to achieving a superconductive state below a certain critical temperature. The thermally sensitive element (101, 305) is supported at a distance from the substrate (301) leaving an empty gap (306) between the thermally sensitive element (101, 305) and a surface of the substrate (301).
    Type: Grant
    Filed: May 23, 2003
    Date of Patent: July 18, 2006
    Assignee: Oxford Instruments Analytical Oy
    Inventor: Arttu Luukanen
  • Patent number: 7078694
    Abstract: A system and method for providing spatial, temporal, energy-resolving detection of single photons using superconducting transmission lines.
    Type: Grant
    Filed: July 24, 2002
    Date of Patent: July 18, 2006
    Assignee: International Business Machines Corporation
    Inventors: Stanislav V. Polonsky, Roger H. Koch, Moyra K. McManus
  • Patent number: 7057172
    Abstract: A particle detector assembly includes a substrate on which are mounted at least two superconducting quasiparticle detectors. A processing system is connected to the detectors and distinguishes between events detected simultaneously in each detector and non-simultaneous events.
    Type: Grant
    Filed: March 11, 2003
    Date of Patent: June 6, 2006
    Assignee: Oxford Instruments Superconductivity LTD
    Inventor: David John Goldie
  • Patent number: 7049593
    Abstract: A single-photon detector includes a superconductor strip biased near its critical current. The superconductor strip provides a discernible output signal upon absorption of a single incident photon. In one example, the superconductor is a strip of NbN (niobium nitride). In another example, the superconductor strip meanders to increase its probability of receiving a photon from a light source. The single-photon detector is suitable for a variety of applications including free-space and satellite communications, quantum communications, quantum cryptography, weak luminescence, and semiconductor device testing.
    Type: Grant
    Filed: October 19, 2004
    Date of Patent: May 23, 2006
    Assignees: Credence Systems Corporation, University of Rochester
    Inventors: Roman Sobolewski, Grigory N. Gol'tsman, Alexey D. Semenov, Oleg V. Okunev, Kenneth R. Wilsher, Steven A. Kasapi
  • Patent number: 7030379
    Abstract: In the improved neutron image detector, MgB2 enriched in a constituent element 10B of wide energy gap is used as a neutron detection plate, which is provided at the center and the four corners with a phonon sensor comprising an insulation layer overlaid with Mg11B2 enriched in 11B of narrow energy gap in order to detect phonons resulting from the generation of ?-rays which occurs in the detection plate upon incidence of neutrons, and sensor's signal intensity and signal propagation time are used to detect the incident position of neutrons.
    Type: Grant
    Filed: December 17, 2004
    Date of Patent: April 18, 2006
    Assignee: Japan Atomic Energy Research Institute
    Inventors: Masaki Katagiri, Masataka Ohkubo
  • Patent number: 6992295
    Abstract: A PET scanner includes a scintillator block and a plurality of photodetectors, each of which has a field of view that includes a portion of the scintillator block. An optical element is disposed between the scintillator block and the plurality of photodetectors. The optical element has a first layer and a second layer. The first layer has a central region and a peripheral region separated by a first gap. The second layer has at least a first region and a second region separated by a second gap.
    Type: Grant
    Filed: October 27, 2003
    Date of Patent: January 31, 2006
    Assignee: PhotoDetection Systems, Inc.
    Inventors: Leonid Romanov, Paul Domigan, Olof Johnson
  • Patent number: 6974952
    Abstract: A radiation detector comprises an energy/electricity converter having a detection area for detecting incident radiation, and electrodes connecting the converter to an external driving circuit for driving the converter to convert energy of the incident radiation detected by the detection area of the converter into an electric signal. A collimator is integrally connected to the converter and has an opening for transmitting radiation to irradiate the detection area of the converter and portions for preventing radiation from irradiating a part of the converter other than the detection area. A spacer is integrally connected to the collimator and the converter for maintaining a preselected distance between the collimator and the detection area of the converter.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: December 13, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Toshimitsu Morooka, Keiichi Tanaka, Atsushi Nagata, Kazuo Chinone, Tatsuji Ishikawa
  • Patent number: 6914253
    Abstract: A method and apparatus for measuring doses of electron beams that are absorbed by an object subjected to e-beam irradiation. The absorbed dose can be continuously measured during an irradiation process, and adjustment can be made to system parameters in accordance with the measured absorbed dose.
    Type: Grant
    Filed: October 24, 2002
    Date of Patent: July 5, 2005
    Assignee: STERIS Inc.
    Inventors: Sergey A. Korenev, Ivan S. Korenev
  • Patent number: 6907359
    Abstract: A superconducting radiation detector relies upon the abruptness of a superconducting transition edge to converts a slight heat generated by an X-ray into a high signal current and uses an electrothermal self-feedback mechanism to provide a high energy resolution and a high counting rate. A calorimeter incorporating such a radiation detector has an absorber for absorbing X-rays, a resistor formed of a superconductor provided under the absorber and having a resistance value that varies with heat generated in the absorber, superconducting wires for connecting the resistor to an external current detector, a membrane on which the resistor is provided, and an insulating film provided between the resistor and the absorber and having at least one hole penetrating therethrough, the resistor and the absorber being in contact through the hole.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: June 14, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Keiichi Tanaka, Toshimitsu Morooka, Satoshi Nakayama
  • Patent number: 6849850
    Abstract: In the improved neutron image detector, MgB2 enriched in a constituent element 10B of wide energy gap is used as a neutron detection plate, which is provided at the center and the four corners with a phonon sensor comprising an insulation layer overlaid with Mg11B2 enriched in 11B of narrow energy gap in order to detect phonons resulting from the generation of ?-rays which occurs in the detection plate upon incidence of neutrons, and sensor's signal intensity and signal propagation time are used to detect the incident position of neutrons.
    Type: Grant
    Filed: June 27, 2002
    Date of Patent: February 1, 2005
    Assignees: Japan Atomic Energy Research Institute, National Institute of Advanced Industrial Science and Technology
    Inventors: Masaki Katagiri, Masataka Ohkubo
  • Patent number: 6836677
    Abstract: A bolometer thin film having a high temperature coefficient of resistance (|TCR|) is produced in a simple and easy production process to provide a highly sensitive infrared sensing element. The invention provides a bolometer using a thin film of an oxide represented by ZyCuOx, wherein Z is one or more alkaline earth metals, one or more rare earth element selected from yttrium and lanthanide elements, one or more elements belonging to Period 5 or Period 6 of the Periodic Table selected from bismuth, lead, thallium, mercury, and cadmium, or potassium or sodium, y is a number satisfying 0≦y≦2, and x is a number satisfying 0.5y<x≦1.5+2y. The bolometer has a temperature coefficient of resistance (|TCR|) higher than that of conventional bolometers.
    Type: Grant
    Filed: September 24, 2002
    Date of Patent: December 28, 2004
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hiroko Higuma, Shoji Miyashita
  • Patent number: 6815708
    Abstract: An optic superconducting circuit element (10) is disclosed that is operable to transmit and receive on an identical chip an electromagnetic wave having frequencies in an extended frequency band ranging from microwave to THz frequency bands and with high sensitivity. The optic superconducting circuit element (10) includes the chip (3), and a superconducting electromagnetic wave oscillating (generating and transmitting) source (16) and a superconducting Josephson junction device (14) disposed in close vicinity to each other on the chip (3), the superconducting Josephson junction device (14) detecting the electromagnetic wave transmitted from the superconducting electromagnetic wave oscillating (generating and transmitting) source (16).
    Type: Grant
    Filed: February 8, 2002
    Date of Patent: November 9, 2004
    Assignee: Japan Science and Technology Agency
    Inventors: Ienari Iguchi, Eiji Kume
  • Patent number: 6812464
    Abstract: A single photon detector includes a superconductor strip biased near its critical current. The superconductor strip provides a discernible output signal upon absorption of a single incident photon. In one example, the superconductor is a strip of NbN (niobium nitride). In another example, the superconductor strip meanders to increase its probability of receiving a photon from a light source. The single-photon detector is suitable for a variety of applications including free-space and satellite communications, quantum communications, quantum cryptography, weak luminescence, and semiconductor device testing.
    Type: Grant
    Filed: July 28, 2000
    Date of Patent: November 2, 2004
    Assignee: Credence Systems Corporation
    Inventors: Roman Sobolewski, Grigory N. Gol'tsman, Alexey D. Semenov, Oleg V. Okunev, Kenneth R. Wilsher, Steven A. Kasapi
  • Patent number: 6800877
    Abstract: An apparatus and method for electrically connecting semi-conductor devices is disclosed. The apparatus and method employs a vacuum chamber and first and second semi-conductor components. The first and second semi-conductor components are coupled to a vacuum chamber and free space electron transmitters and receivers. The transmitters are configured to transmit a signals between the semi-conductor components.
    Type: Grant
    Filed: June 6, 2002
    Date of Patent: October 5, 2004
    Assignee: Exaconnect Corp.
    Inventors: Michel N. Victor, Aris Silzars
  • Patent number: 6765207
    Abstract: A method of producing a transition edge sensor comprises depositing a sensing material upon a substrate to form a sensing layer having an associated transition temperature. The transition temperature for the sensing layer is selected as desired. The desired transition temperature is produced by controlling the temperature of the substrate for the deposition process.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: July 20, 2004
    Assignee: Oxford Instruments Superconductivity Limited
    Inventors: David John Goldie, Erdan Gu
  • Publication number: 20040016883
    Abstract: A system and method for providing spatial, temporal, energy-resolving detection of single photons using superconducting transmission lines.
    Type: Application
    Filed: July 24, 2002
    Publication date: January 29, 2004
    Applicant: International Business Machines Corporation
    Inventors: Stanislav V. Polonsky, Roger H. Koch, Moyra K. McManus
  • Publication number: 20040011960
    Abstract: There is provided a radiation detector that allows accurate irradiation to a detection area and has a high detection efficiency. A collimator that has an opening for transmitting radiation to irradiate the detection area and a function as a shielding plate for preventing radiation from irradiating a part other than the detection area is installed on the same board that forms an energy/electricity converter (radiation detector). The radiation detector is constructed such that the alignment of the opening of the collimator and the detection area is easy, and the detection area and the opening of the collimator are close so that the detection efficiency is increased.
    Type: Application
    Filed: April 17, 2003
    Publication date: January 22, 2004
    Inventors: Toshimitsu Morooka, Keiichi Tanaka, Atsushi Nagata, Kazuo Chinone, Tatsuji Ishikawa
  • Publication number: 20030222217
    Abstract: An antenna-coupled microbolometer structure comprises a substrate (301), an antenna (102, 103) supported by the substrate, and a thermally sensitive element (101, 305) connected to the antenna and arranged to dissipate electric currents induced into the antenna. Both the antenna (102, 103) and the thermally sensitive element (101, 305) comprise material that is susceptible to achieving a superconductive state below a certain critical temperature. The thermally sensitive element (101, 305) is supported at a distance from the substrate (301) leaving an empty gap (306) between the thermally sensitive element (101, 305) and a surface of the substrate (301).
    Type: Application
    Filed: May 23, 2003
    Publication date: December 4, 2003
    Applicant: Metorex International Oy
    Inventor: Arttu Luukanen
  • Publication number: 20030178567
    Abstract: A particle detector assembly comprises a substrate on which are mounted at least two superconducting quasiparticle detectors. A processing system is connected to the detectors and adapted to distinguish between events detected substantially simultaneously in each detector and non-simultaneous events.
    Type: Application
    Filed: March 11, 2003
    Publication date: September 25, 2003
    Applicant: Oxford Instruments Superconductivity Ltd.
    Inventor: David John Goldie
  • Patent number: 6617596
    Abstract: An accelerator (10) generates an electron beam (22) of selected energy that is swept (16) up and down. A conveyor (32) moves items (30) through the electron beam for irradiation treatment. An array (40a) of inductive electron beam strength detectors is disposed on a down stream side of the item to detect the energy of the electron beam exiting the item at the plurality of altitudes. The electron beam strength entering and leaving the item are communicated to a processor (54) which determines the absorbed dose of radiation absorbed by the item. The dose information is archived (56) or compared by a parameter adjustment processor (58) with target doses and deviations are used to control one or more of MeV or beam current of the electron beam, the sweep rate, and the conveying speed of the items. Each of the detectors includes a vacuum chamber in which two current transformers (60, 62) disposed on either side of a metal foil layer (64).
    Type: Grant
    Filed: November 17, 2000
    Date of Patent: September 9, 2003
    Assignee: Steris Inc.
    Inventor: Sergey Alexandrovich Korenev
  • Publication number: 20030001094
    Abstract: In the improved neutron image detector, MgB2 enriched in a constituent element 10B of wide energy gap is used as a neutron detection plate, which is provided at the center and the four corners with a phonon sensor comprising an insulation layer overlaid with Mg11B2 enriched in 11B of narrow energy gap in order to detect phonons resulting from the generation of &agr;-rays which occurs in the detection plate upon incidence of neutrons, and sensor's signal intensity and signal propagation time are used to detect the incident position of neutrons.
    Type: Application
    Filed: June 27, 2002
    Publication date: January 2, 2003
    Applicant: Japan Atomic Energy Research Institute
    Inventors: Masaki Katagiri, Masataka Ohkubo
  • Publication number: 20020171040
    Abstract: A method of producing a transition edge sensor comprises depositing a sensing material upon a substrate to form a sensing layer having an associated transition temperature. The transition temperature for the sensing layer is selected as desired. The desired transition temperature is produced by controlling the temperature of the substrate for the deposition process.
    Type: Application
    Filed: April 30, 2002
    Publication date: November 21, 2002
    Applicant: Oxford Instruments Superconductivity Limited
    Inventors: David John Goldie, Erdan Gu
  • Patent number: 6455849
    Abstract: Multi-layer transition-edge sensors (TES) having improved performance, a method for preparing them and methods of using them. Specifically, the improvement lies in providing normal metal strips along the edges of the superconducting and normal metal layers parallel to the current flow in the TES during operation. These strips (referred to as “banks”) provide for both improved detector performance and improved detector robustness against corrosion. This improvement is an important advance particularly for TES-based microcalorimeter detectors. The improved TESs also have many other applications based on the very precise thermometer function achieved by the TES.
    Type: Grant
    Filed: September 28, 2000
    Date of Patent: September 24, 2002
    Assignee: The United States of America as represented by the Secretary of Commerce
    Inventors: Gene C. Hilton, John M. Martinis, Kent D. Irwin, David A. Wollman
  • Patent number: 6337488
    Abstract: A defect inspection apparatus enabling more reliable and quicker detection of a defect present in the surface of a stacked film formed on a wafer and enabling reliable and quicker detection of a minute defect even if there is unevenness in the surface of the wafer, including a light source, a light frequency shifter unit for converting light from the light source to a plurality of beams of inspection light and a beam of reference light having close frequencies, an object lens upon which the beams of inspection light are incident and focusing the beams of light on the wafer to form a plurality of different focal points corresponding to the beams of inspection light, a laser scanning unit for making the beams of inspection light scan the wafer, a light detection unit and cofocal pinhole plate 13 for detecting an intensity of a superposed light of the beams of reflected light and the beam of reference light at a cofocal point, and an analyzing unit serving as a contrast waveform generating means for generating a
    Type: Grant
    Filed: February 29, 2000
    Date of Patent: January 8, 2002
    Assignee: Sony Corporation
    Inventor: Kouki Okawauchi
  • Patent number: 6281497
    Abstract: A radioactive ray detecting device comprises a superconductor element formed without an underlying substrate, an oxide film formed on a surface of the superconductor element, and a superconductor thin film formed on the oxide film. The oxide film and the superconductor thin film cover substantially an entire periphery of the surface of the superconductor element. The semiconductor element may be formed of a polycrystalline material such as aluminum, or a single crystal superconductor such as one containing tin, lead, niobium or tantalum, and may have a circular cross section or a rectangular cross section.
    Type: Grant
    Filed: July 12, 1999
    Date of Patent: August 28, 2001
    Assignee: Seiko Instruments Inc.
    Inventor: Hiroyuki Suzuki
  • Patent number: 6239431
    Abstract: A system and method for using one or more localized weak-link structures, and damping on the electrical bias circuit, to improve the performance of superconducting transition-edge sensors (TES). The weak links generally consist of an area or areas having a reduction in cross-sectional geometry in an otherwise uniform bilayer TES applied to a substrate. The weak links control the dissipation of power in the sensor, making it quieter and making its electrical response smoother and less hysteretic. The TES response is also made smoother by implementing a damping circuit on the electrical output of the TES.
    Type: Grant
    Filed: November 24, 1998
    Date of Patent: May 29, 2001
    Assignee: The United States of America as represented by the Secretary of Commerce
    Inventors: Gene Hilton, Kent David Irwin, John Martinis, David Wollman
  • Patent number: 6211519
    Abstract: A superconducting transition-edge sensor with an electrothermal-feedback circuit, a heat sink thermally coupled thereto, a bias-feedback circuit electrically coupled with the electrothermal feedback circuit, and a current sensor electrically coupled with the bias-feedback circuit and inductively coupled with the electrothermal-feedback circuit.
    Type: Grant
    Filed: September 14, 1998
    Date of Patent: April 3, 2001
    Assignee: The Board of Trustees of the LeLand Stanford Junior University
    Inventors: Sae Woo Nam, Blas Cabrera