Abstract: A method of preparing oxide-based nanophosphor includes preparing a reaction mixture by dissolving reaction mixture components including a metal halide, an oleate, and a precipitation auxiliary compound in a solvent; irradiating the reaction mixture with microwave radiation to precipitate an oxide-based nanophosphor precursor; and sintering the oxide-based nanophosphor precursor.

Abstract: The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M1 other than the metal element M, a tetravalent element M2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr3Al3Si13O2N21, but the chemical bond lengths of M1-N and M2-N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr3Al3Si13O2N21, respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.

Abstract: Novel two-phase yellow phosphors are disclosed having a peak emission intensity at wavelengths ranging from about 555 nm to about 580 nm when excited by a radiation source having a wavelength ranging from 220 nm to 530 nm. The present phosphors may be represented by the formula a[Srx(M1)1-x]zSiO4.(1-a)[Sry(M2)1-y]uSiO5:Eu2+D, wherein M1 and M2 are at least one of a divalent metal such as Ba, Mg, Ca, and Zn, the values of a, x, y, z and u follow the following relationships: 0.6?a?0.85; 0.3?x?0.6; 0.85?y?1; 1.5?z?2.5; 2.6?u?3.3; and Eu and D each range from 0.001 to about 0.5. D is an anion selected from the group consisting of F, Cl, Br, S, and N, and at least some of the D anion replaces oxygen in the host silicate lattice of the phosphor. The present yellow phosphors have applications in high brightness white LED illumination systems, LCD display panels, plasma display panels, and yellow LEDs and illumination systems.

Abstract: A light-emitting device with improved luminescence characteristics, particularly color-rendering properties, includes a phosphor. The phosphor includes a compound represented by formula aM1O-bM22O3-cM3O2, wherein M1 represents at least one element selected from the group consisting of Ba, Sr, Ca, Mg and Zn, M2 represents at least one element selected from the group consisting of Al, Sc, Ga, Y, In, La, Gd and Lu, M3 represents at least one element selected from the group consisting of Si, Ti, Ge, Zr, Sn and Hf, a is a value of not less than 8 and not more than 10, b is a value of not less than 0.8 and not more than 1.2, and c is a value of not less than 5 and not more than 7, and having at least one element as an activator selected from the group consisting of rare earth elements, Mn, Bi and Zn incorporated into the compound.

Abstract: A long-lived phosphor composition is provided, along with methods for making and using the composition. More specifically, in one embodiment, the phosphor comprises a material having a formula of Ax-y-zAl2-m-n-o-pO4:Euy, REz, Bm, Znn, Coo, Scp. In this formula, A may be Ba, Sr, Ca, or a combination of these metals, x is between about 0.75 and 1.3, y is between about 0.0005 and 0.1, z is between about 0.0005 and 0.1, m is between about 0.0005 and 0.30, n is between about 0.0005 and 0.10, o is between about 0 and 0.01 and p is between about 0 and 0.05. RE is Dy, Nd, or a combination thereof. In another embodiment, methods are provided for making persistent phosphors comprising the formulations above. Other embodiments provide applications for such a phosphor, comprising uses in toys, emergency equipment, clothing, and instrument panels, among others.

Abstract: The invention relates to an alkaline-earth-aluminate-type compound which is at least partially crystallised such as in the form of a beta- or tridymite-type alumina Said compound can be used as phosphor in plasma-type screens or in trichromatic lamps, backlights for liquid crystal displays or plasma excitation lighting or in light-emitting diodes. The invention also relates to a precursor compound of the aforementioned compound.

Abstract: There is provided a method for industrially producing a phosphor with high performance, in particular, high brightness. There is also provided a nitrogen-containing alloy and an alloy powder that can be used for the production method. A method for producing a phosphor includes a step of heating a raw material for the phosphor under a nitrogen-containing atmosphere, in which an alloy containing two or more different metal elements constituting the phosphor is used as the whole or part of the raw material for the phosphor, and in the heating step, the heating is performed under conditions such that the temperature change per minute is 50° C. or lower. It is possible to suppress the rapid progress of a nitridation reaction in heat treatment in producing the phosphor using an alloy for a phosphor precursor as the whole or part of the raw material, thereby industrially producing the phosphor with high performance, in particular, high brightness.

Abstract: Methods for preparing rare earth doped monodisperse, hexagonal phase upconverting nanophosphors, the steps of which include: dissolving one or more rare earth precursor compounds and one or more host metal fluoride compounds in a solvent containing a tri-substituted phosphine or a tri-substituted phosphine oxide to form a solution; heating the solution to a temperature above about 250° C. at which the phosphine or phosphine oxide remains liquid and does not decompose; and precipitating and isolating from the solution phosphorescent hexagonal phase monodisperse nanoparticles of the host metal compound doped with rare earth elements. Nanoparticles according to the present invention, and methods for coating the nanoparticles with SiO2 are also disclosed.

Abstract: A light-emitting device is produced using a phosphor composition containing a phosphor host having as a main component a composition represented by a composition formula: aM3N2.bAlN.cSi3N4, where “M” is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, and Zn, and “a”, “b”, and “c” are numerical values satisfying 0.2?a/(a+b)?0.95, 0.05?b/(b+c)?0.8, and 0.4?c/(c+a)?0.95. This enables a light-emitting device emitting white light and satisfying both a high color rendering property and a high luminous flux to be provided.

Abstract: The current invention provides a persistent phosphor blend, along with techniques for making and using the blend. The persistent phosphor blend is made of at least one persistent phosphor combined with at least one other phosphor, where the excitation spectra of the one or more other phosphors overlap the emission spectra of the one or more persistent phosphors. The choice of the phosphors used allows the decay time and emission colors to be tuned for the specific application. In another embodiment, the invention provides a method for making persistent phosphor blends with tunable colors. In yet another embodiment, applications for such a persistent phosphor blend are provided.

Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.

Abstract: The invention is directed to luminescent materials containing isotopically-enriched atomic elements and methods of making these luminescent materials. Individual embodiments of the invention include isotopically-enriched ZnO:Zn, ZnS:Cu:Cl, Zn2SiO4:Mn, Y2O2S:Eu, Gd2O2S:Tb and CaWO4 phosphors as well as methods of synthesizing these luminescent materials using isotopically-enriched starting materials.

Abstract: Electroluminescent phosphor powders and a method for making phosphor powders. The phosphor powders have a small particle size, narrow particle size distribution and are substantially spherical. The method of the invention advantageously permits the economic production of such powders. The invention also relates to improved devices, such as electroluminescent display devices, incorporating the phosphor powders.

Abstract: A phosphor capable of preventing a deterioration in luminous characteristics thereof, particularly, high-temperature operation characteristics thereof due to a SiO2-containing pigment added thereto. The phosphor has a pigment contained therein, wherein the pigment has SiO2 added thereto and is melted, to thereby be coated with sodium glass. This permits gas generated during operation of the phosphor to be adsorbed on the phosphor as compared with a conventional phosphor to which the pigment subjected to the above-described treatment is not added, resulting in luminance retention of the phosphor after operation thereof being increased. In particular, it permits characteristics of the non-driven phosphor after the high-temperature operation test to be enhanced.

Abstract: The present invention provides a green phosphor for fluorescent display having a composition represented by a chemical formula: xZnO+(2-x-y/2)Ga2O3+yAl2O3:zMn2+ where 0.8≦x<1.0; 0<y≦0.8, and 0<z≦0.1, wherein a part of gallium in nonstoichiometric zinc gallate base is substituted for aluminum and Mn2+ is added to the zinc gallate base. Also, the present invention provides a method of manufacturing said green phosphor for fluorescent display, the method comprising steps of: preparing a mixture by mixing uniformly zinc oxide, gallium oxide, aluminum oxide, alcohol and either an aqueous solution of manganese salt or an aqueous suspension of manganese oxide; preparing a compound by heating said mixture; and reducing said compound by re-heating said compound in a reducing atmosphere.

Abstract: Disclosed is a low-voltage blue color fluorescent substance which is doped with 0.5 to 3 weight % of P, and a manufacturing method of the same. The above blue color fluorescent substance is manufactured by mixing phosphoric compound as flux with a mixture of zinc oxide (ZnO) and gallium oxide (Ga2O3); carrying out a primary burn on the mixture at a temperature of 1,200 to 1,300° C.; ball milling and washing; and carrying out a secondary burn on the resultant material at a temperature of 900 to 1,100° C., and then classifying the substance.

Abstract: A low-voltage excited blue phosphor is provided. The phosphor comprises a matrix represented by general formula ZnO.Ga2O3, and Bi doped in the matrix. To prepare the phosphor, ZnO, Ga2O3, Bi compound, and a flux are mixed to produce a mixture, and the mixture is fired at 1100-1300° C. to produce a fired material. Then the fired material is milled, and washed with an acid. The washed material is fired at 800-1100° C. and sieved to produce the blue phosphor.

Abstract: Disclosed is a low voltage blue emitting phosphor and a method for producing the same including the steps of: mixing ZnO, Ga2O3and a Na-based compound to obtain a mixture material; sintering the material at a temperature of 1100 to 1300° C.; milling the first sintered material; washing the milled material using hydrochloric acid; sintering the washed material at a temperature of 800 to 1100° C.; and classifing the material. The low voltage blue emitting phosphor produced as described above is a ZnO—Ga2O3matrix doped with Na, and has an x value of 0.18±0.05 and a y value of 0.17±0.05 in a CIE chromaticity diagram.