Carbide Containing Patents (Class 252/516)
  • Patent number: 9969652
    Abstract: A sintered body of the present invention contains yttrium oxyfluoride. The yttrium oxyfluoride is preferably YOF and/or Y5O4F7. The sintered body of the present invention preferably contains 50% by mass or more of yttrium oxyfluoride. The sintered body of the present invention has a relative density of preferably 70% or more and an open porosity of preferably 10% or less. Furthermore, the sintered body of the present invention has a three-point bending strength of preferably 10 MPa or more and 300 MPa or less.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: May 15, 2018
    Assignee: NIPPON YITRIUM CO., LTD.
    Inventors: Toyohiko Yano, Katsumi Yoshida, Toru Tsunoura, Yuji Shigeyoshi
  • Patent number: 9908307
    Abstract: A honeycomb structural body 40 includes: a partition wall 48 formed of a porous ceramic which forms and defines a plurality of cells 47 each functioning as a flow path of a fluid and extending from one end surface to the other end surface; and an outer circumference wall 49 formed along the outermost circumference, where an oxide ceramic containing a Fe3O4 phase in which a solute component capable of forming a spinel-type oxide with Fe is solid-dissolved is formed.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: March 6, 2018
    Assignee: NGK Insulators, Ltd.
    Inventors: Yunie Izumi, Yoshimasa Kobayashi
  • Patent number: 9876342
    Abstract: Compositions comprising ferrosoferric oxide dispersed in a polymer matrix. Such compositions may exhibit properties suitable for achieving both resistive field grading effects and capacitive field grading effects e.g. in electrical stress control devices and surge arrestor devices. Such compositions may optionally include one or more capacitive field grading additives and/or conductive additives.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: January 23, 2018
    Assignee: 3M Innovative Properties Company
    Inventor: Dipankar Ghosh
  • Patent number: 9773652
    Abstract: Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: September 26, 2017
    Assignees: UBE MATERIAL INDUSTRIES, LTD., NIPPON TUNGSTEN CO., LTD.
    Inventors: Satoru Sano, Yoshihiro Nishimura, Takayuki Watanabe, Yuuzou Katou, Akira Ueki, Shinzo Mitomi, Masanobu Takasu, Yusuke Hara, Takaaki Tanaka
  • Patent number: 9725367
    Abstract: Provided are: an apparatus and a method for producing a (metal plate)-(ceramic board) laminated assembly, a bonding material and a metal plate during the bonding of the metal plate to the ceramic board through the bonding-material layer and an apparatus and a method for producing a power-module substrate. An apparatus for producing a (metal plate)-(ceramic board) laminated assembly by laminating a metal plate having a temporary bonding material formed thereon on a ceramic board having a bonding-material layer formed thereon, the apparatus being equipped with: a conveying device which conveys the metal plate onto the ceramic board to laminate the ceramic board and the metal plate on each other; and a heating device which is arranged in the middle of a passage of the conveyance of the metal plate by the conveying device and melts the temporary-bonding material on the metal plate.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: August 8, 2017
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Sotaro Oi, Takayuki Kawasaki
  • Patent number: 9601689
    Abstract: According to one embodiment, a memory device includes a plug, a variable resistance film provided on the plug, and an electrode provided on the variable resistance film. The variable resistance film includes, a first portion having a superlattice structure, and a second portion having an amorphous structure.
    Type: Grant
    Filed: January 21, 2015
    Date of Patent: March 21, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Kazuhiko Yamamoto
  • Patent number: 9534316
    Abstract: Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a ?-type crystal phase and a grain size in a range of about 5 ?m to about 100 ?m.
    Type: Grant
    Filed: January 18, 2013
    Date of Patent: January 3, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Sook Kim, Dong Geun Shin, Bum Sup Kim, Jung Eun Han
  • Patent number: 9457405
    Abstract: In various embodiments, a precursor powder is pressed into an intermediate volume and chemically reduced, via sintering, to form a metallic shaped article.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: October 4, 2016
    Assignee: H.C. Starck, Inc.
    Inventors: Maria Bozena Winnicka, Gary A. Rozak
  • Patent number: 9416012
    Abstract: A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon, a silicon carbide source and a carbone source comprising at least one of a solid carbon and a organic compound; and reacting the mixture.
    Type: Grant
    Filed: June 25, 2012
    Date of Patent: August 16, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Sook Kim, Jung Eun Han
  • Patent number: 9397273
    Abstract: An optoelectronic device includes a layer sequence having an active layer that emits electromagnetic primary radiation, and at least one converter carrier layer arranged in the beam path of the electromagnetic primary radiation. The at least one converter carrier layer includes converter particles and an inorganic-organic hybrid material and/or a silicate glass.
    Type: Grant
    Filed: April 2, 2013
    Date of Patent: July 19, 2016
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Florian Eder, Sven Pihale
  • Patent number: 9236170
    Abstract: Provided are a multilayer chip ZnO varistor with base metal inner electrodes and a preparation method thereof. The varistor is formed by ceramic sheets and inner electrodes which were alternately laminated. Wherein the main material of inner electrodes is the base metal nickel(Ni), both ends of the varistor are coated with silver electrodes.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: January 12, 2016
    Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Qiuyun Fu, Dongxiang Zhou, Yunxiang Hu, Zhiping Zheng, Wei Luo, Tao Chen
  • Publication number: 20150122533
    Abstract: A metal circuit structure, a method for forming a metal circuit and a liquid trigger material for forming a metal circuit are provided. The metal circuit structure includes a substrate, a first trigger layer and a first metal circuit layer. The first trigger layer is disposed on the substrate and includes a first metal circuit pattern. The first metal circuit layer is disposed on the first circuit pattern and is electrically insulated from the substrate. The composition of the first trigger layer includes an insulating gel and a plurality of trigger particles. The trigger particles are at least one of organometallic particles, a chelation and a semiconductor material having an energy gap greater than or equal to 3 eV. The trigger particles are disposed in the insulating gel, such that the dielectric constant of the first trigger layer after curing is between 2 and 6.5.
    Type: Application
    Filed: July 3, 2014
    Publication date: May 7, 2015
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Tune-Hune KAO, Meng-Chi HUANG, Min-Chieh CHOU
  • Patent number: 8980137
    Abstract: A composite for providing electromagnetic shielding including a plurality of nanotubes; and a plurality of elongate metallic nanostructures.
    Type: Grant
    Filed: August 4, 2011
    Date of Patent: March 17, 2015
    Assignee: Nokia Corporation
    Inventors: Vladimir Alexsandrovich Ermolov, Markku Anttoni Oksanen, Khattiya Chalapat, Gheorghe Sorin Paraoanu
  • Publication number: 20150069307
    Abstract: Compositions and methods of making are provided for treated mesoporous metal oxide microspheres electrodes. The compositions include microspheres with an average diameter between about 200 nanometers and about 10 micrometers and mesopores on the surface and interior of the microspheres. The methods of making include forming a mesoporous metal oxide microsphere composition and treating the mesoporous metal oxide microspheres by at least annealing in a reducing atmosphere, doping with an aliovalent element, and coating with a coating composition.
    Type: Application
    Filed: November 12, 2014
    Publication date: March 12, 2015
    Applicant: UT-BATTELLE, LLC
    Inventors: Mariappan Parans Paranthaman, Zhonghe Bi, Craig A. Bridges, Gilbert M. Brown
  • Publication number: 20150042195
    Abstract: A corona shield material (22) for producing a corona shield protective layer (16, 17) for an electric machine (1). The corona shield material (22) contains an initially flowable matrix material (22) which can be cured in a curing reaction to form a solid. The corona shield material (22) further contains a photosensitive initiator (24) which can be transformed by electromagnetic radiation (25) into a reactive state triggering the curing reaction. The corona shield material (22) further contains at least one electrically conductive filler (25) in particulate form.
    Type: Application
    Filed: March 18, 2013
    Publication date: February 12, 2015
    Inventors: Mario Brockschmidt, Stefan Kempen, Friedhelm Pohlmann, Guido Schmidt
  • Patent number: 8952302
    Abstract: The present invention relates to a ceramic-coated heater in which the outer surface of a heater rod is coated with ceramic to improve the physical properties thereof including durability, corrosion resistance, and the like, thereby enabling the heater to be used in water or air. The outer surface of the heater rod is coated with a ceramic composition to which an acrylic corrosion resistant wax is added, thereby strengthening the bonding force of the coating layer film, and thus improving the physical properties thereof including durability, corrosion resistance, and the like to enable the heater to be used in water. Therefore, the ceramic-coated heater of the present invention enables high thermal conductivity using less current and reduces energy consumption so that it can be utilized in a wide variety of industrial fields.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: February 10, 2015
    Assignee: Thermolon Korea Co., Ltd.
    Inventor: Chung Kwon Park
  • Patent number: 8940190
    Abstract: A composite for providing electromagnetic shielding including a plurality of nanotubes; and a plurality of elongate metallic nanostructures.
    Type: Grant
    Filed: August 4, 2011
    Date of Patent: January 27, 2015
    Assignee: Nokia Corporation
    Inventors: Vladimir Alexsandrovich Ermolov, Markku Anttoni Oksanen, Khattiya Chalapat, Gheorghe Sorin Paraoanu
  • Patent number: 8927099
    Abstract: The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer contains a transition metal compound-containing nanoparticle comprising a transition metal compound containing one or more kinds selected from the group consisting of a transition metal carbide oxide, transition metal nitride oxide and transition metal sulfide oxide, wherein a protecting agent having a linking group and a hydrophobic organic group is connected to the transition metal compound by the linking group.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: January 6, 2015
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Shigehiro Ueno, Yosuke Taguchi, Masaya Shimogawara
  • Publication number: 20140374674
    Abstract: A thermistor material for a short range of low temperature use includes a matrix material composed of nitride-based and/or oxide-based insulating ceramics, conductive particles composed of ?-SiC and dispersed in the grain boundary of each crystal grain of the matrix material so as to form an electric conduction path. The thermistor material further contains boron and second conductive particles added thereto, which are composed of a metal or an inorganic compound, having a specific electric resistance value at room temperature lower than that of the ?-SiC and a melting point of 1700° C. or more. Such a thermistor material is produced by mixing matrix powder, conductive powder, second conductive powder, boron powder, and a sintering agent as necessary such that a temperature coefficient of resistance (B value) and a specific electric resistance value at room temperature are each within a predetermined range, and molding and sintering the resultant mixture.
    Type: Application
    Filed: March 19, 2013
    Publication date: December 25, 2014
    Inventor: Katsunori Yamada
  • Publication number: 20140374673
    Abstract: A composition comprising a Type 1 clathrate of silicon having a Si46 framework cage structure wherein the silicon atoms on said framework are at least partially substituted by carbon atoms, said composition represented by the formula CySi46-y with 1?y?45. The composition of may include one or more guest atoms A within the cage structure represented by the formula AxCySi46-y wherein A=H, Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca. Sr, Ba, Ra, Eu, Cl, Br, or I or any metal or metalloid element and x is the number of said guest atoms within said cage structure.
    Type: Application
    Filed: June 24, 2013
    Publication date: December 25, 2014
    Inventors: Kwai S. CHAN, Michael A. MILLER
  • Patent number: 8877099
    Abstract: The present invention provides a Ti3SiC2 based material that exhibits excellent arc resistance, an electrode, a spark plug, and methods of manufacturing the same. A Ti3SiC2 based material according to the present invention includes Ti3SiC2 as a main phase, the Ti3SiC2 based material having a TiC content of 0.5 mass % or less and an open porosity of 0.5% or less. It may be preferable that 0 to 30 mol % of Si in the main phase Ti3SiC2 be substituted with Al. A spark plug according to the present invention includes an electrode formed using the Ti3SiC2 based material.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: November 4, 2014
    Assignee: NGK Insulators, Ltd.
    Inventors: Tetsuya Hattori, Takafumi Kimata, Yoshimasa Kobayashi
  • Patent number: 8877333
    Abstract: The present invention is to provide a device capable of having an easy production process and achieving a long lifetime. A device comprising a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes, wherein the positive hole injection transport layer contains a transition metal compound-containing nanoparticle comprising a transition metal compound containing one or more kinds selected from the group consisting of a transition metal carbide oxide, transition metal nitride oxide and transition metal sulfide oxide, wherein a protecting agent having a linking group and a hydrophobic organic group is connected to the transition metal compound by the linking group.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: November 4, 2014
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Shigehiro Ueno, Yosuke Taguchi, Masaya Shimogawara
  • Publication number: 20140231724
    Abstract: An active material for a lithium secondary battery includes an amorphous and metastable phase which contains silicon, oxygen, and more than 30 at % and 80 at % or less of carbon.
    Type: Application
    Filed: March 23, 2012
    Publication date: August 21, 2014
    Applicant: WASEDA UNIVERSITY
    Inventors: Tetsuya Osaka, Toshiyuki Momma, Tokihiko Yokoshima, Hiroki Nara
  • Publication number: 20140167187
    Abstract: An N work function metal for a gate stack of a field effect transistor (FinFET) and method of forming the same are provided. An embodiment FinFET includes a fin supported by a semiconductor substrate, the fin extending between a source and a drain and having a channel region, and a gate stack formed over the channel region of the fin, the gate stack including an N work function metal layer comprising an oxidation layer on opposing sides of a tantalum aluminide carbide (TaAlC) layer.
    Type: Application
    Filed: December 19, 2012
    Publication date: June 19, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Po-Chin Kuo, Chung-Liang Cheng, Hsien-Ming Lee, Weng Chang
  • Patent number: 8753545
    Abstract: Composite particles that include an electrochemically active metal phase, an insulating phase, and a conducting phase are provided that are useful active materials in negative electrodes for lithium-ion electrochemical cells. The electrochemically active phase includes silicon. Lithium-ion electrochemical cells are provided that include the provided composite composite particles as active materials in negative electrodes as well as methods of making the provided composite particles.
    Type: Grant
    Filed: March 3, 2010
    Date of Patent: June 17, 2014
    Assignee: 3M Innovative Properties Company
    Inventors: Mark N. Obrovac, Marc Flodquist
  • Patent number: 8741185
    Abstract: The invention relates to a composite material of formula: (C—N—B-MR)x(Al-MR)y(R)z in which C—N—B-MR is one or more carbides, nitrides or borides of one or more refractory metals of group IV, V or VI of the Periodic Table and/or one or more aluminium carbides, nitrides or borides chosen from Al4C3, AlN, AlB2 and Al1-67B22; Al-MR is one or more aluminides of one or more of the above refractory metals, it being understood that: if MR=Nb, Ta, Hf, Zr, Ti or V, then Al-MR=Al3MR; if MR=W or Cr, then Al-MR=Al4MR; if MR=Mo, then Al-MR=Al8Mo3 or Al17Mo4 (?Al4Mo), and R is a residual component other than carbon, comprising one or more phases chosen from Al4C3, AlN, AlB2, Al1-67B22 and MRtAlu(C—N—B)v in which t, u and v are numbers greater than or equal to zero, and x, y and z are the volume fractions of the respective components with x>y; x+y>0.5; x+y+z+1 and 0.01<y<0.5.
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: June 3, 2014
    Assignee: Hydro-Quebec
    Inventors: Robert Schulz, Sylvio Savoie
  • Patent number: 8734674
    Abstract: A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: May 27, 2014
    Assignee: Northwestern University
    Inventors: Mark C. Hersam, Albert L. Lipson, Sudeshna Bandyopadhyay, Hunter J. Karmel, Michael J. Bedzyk
  • Patent number: 8647534
    Abstract: A copper-carbon composition including copper and carbon, wherein the copper and the carbon form a single phase material, and wherein the carbon does not phase separate from the copper when the material is heated to a melting temperature.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: February 11, 2014
    Assignee: Third Millennium Materials, LLC
    Inventors: Jason V. Shugart, Roger C. Scherer
  • Patent number: 8608983
    Abstract: A composite anode active material including metal core particles and carbon nanotubes that are covalently bound to the metal core particles, an anode including the composite anode active material, a lithium battery employing the anode, and a method of preparing the composite anode active material.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: December 17, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-hee Lee, Jeong-na Heo, Ho-suk Kang, Sang-kook Mah, In-taek Han
  • Publication number: 20130330599
    Abstract: A feed-through, for example a battery feed-through for a lithium-ion battery or a lithium ion accumulator, has at least one base body which has at least one opening through which at least one conductor, for example a pin-shaped conductor, embedded in a glass material is guided. The base body contains a low melting material, for example a light metal, such as aluminum, magnesium, AlSiC, an aluminum alloy, a magnesium alloy, titanium, titanium alloy or steel, in particular special steel, stainless steel or tool steel. The glass material consists of the following in mole percent: 35-50% P2O5, for example 39-48%; 0-14% Al2O3, for example 2-12%; 2-10% B2O3, for example 4-8%; 0-30% Na2O, for example 0-20%; 0-20% Li2O, for example 12-20%, wherein M is K, Cs or Rb; 0-10% PbO, for example 0-9%; 0-45% Li2O, for example 0-40% or 17-40%; 0-20% BaO, for example 5-20%; 0-10% Bi2O3, for example 1-5% or 2-5%.
    Type: Application
    Filed: August 14, 2013
    Publication date: December 12, 2013
    Applicant: Schott AG
    Inventors: Frank Kroll, Helmut Hartl, Andreas Roters, Hauke Esemann, Dieter Goedeke, Ulf Dahlmann, Sabine Pichler-Wilhelm, Martin Landendinger, Linda Johanna Backnaes
  • Patent number: 8603243
    Abstract: A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber.
    Type: Grant
    Filed: July 31, 2008
    Date of Patent: December 10, 2013
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Brenda L VanMil, Kok-Keong Lew, Rachael L Myers-Ward, Charles R. Eddy, Jr., David Kurt Gaskill
  • Publication number: 20130250481
    Abstract: A conductive fine powder includes flat metal/alloy fine particles. The flat metal/alloy fine particles have a nanocomposite structure in which crystalline or non-crystalline nanoparticles are mixed or formed in a matrix. The flat metal/alloy fine particles have a maximum thickness of 50 nm or less and a maximum diameter at least twice the thickness and contain a high-melting-point metal and a low-melting-point metal.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 26, 2013
    Applicant: NAPRA CO., LTD.
    Inventors: Shigenobu Sekine, Yurina Sekine
  • Patent number: 8501050
    Abstract: Composite materials comprising titanium diboride, silicon carbide and carbon-containing scavenger additions are useful in electrolytic aluminum production cells. The carbon-containing scavenger additions may include tungsten carbide, boron carbide and/or carbon. The amounts of titanium diboride, silicon carbide and carbon-containing scavenger are controlled in order to provide optimum performance. The titanium diboride/silicon carbide composite materials may be used as cathodes in electrolytic aluminum production cells and are electrically conductive, exhibit desirable aluminum wetting behavior, and are capable of withstanding exposure to molten cryolite, molten aluminum and oxygen at elevated temperatures during operation of such cells.
    Type: Grant
    Filed: September 28, 2011
    Date of Patent: August 6, 2013
    Assignee: Kennametal Inc.
    Inventors: Sean Erin Landwehr, Roberta R. Yeckley
  • Patent number: 8470196
    Abstract: An alloy comprising tin, silicon and carbon, and containing a crystalline M-Sn phase, M being an inert metal. An alloy comprising tin and silicon, comprising: a) a nanocrystalline phase containing at least 50 at. % of the element silicon Si°; b) a nanocrystalline phase containing a compound based on tin; c) a nanocrystalline phase constituted by the element tin Sn°. A manufacturing process for this alloy.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: June 25, 2013
    Assignees: Saft Groupe SA, Centre National de la Recherche Scientifique, Universite Paris XII Val de Marne
    Inventors: Thierry Hezeque, Fermin Cuevas, Michel Latroche, Georges Caillon, Christian Jordy, Claudette Audry
  • Publication number: 20130153836
    Abstract: In a powder fabrication step (S1) in this method for producing a silicon carbide singe crystal, a metal material containing at least one of vanadium, niobium, and tungsten is mixed into silicon carbide powder as transition metal atoms for the silicon carbide powder, which is the source or silicon carbide, to produce a sublimation starting material (50). In a purification process step (S2), the sublimation starting material (50) is disposed in a purified graphite crucible (10), and a sublimation/growth step (S3) is carried out. When a growth height for this single crystal such that the donor concentration and acceptor concentration are equal in the single crystal of silicon carbide obtained by growth of sublimated raw material on a seed crystal in the sublimation/growth step (S3) is achieved, nitrogen gas is introduced at 0.5-100 ppm of an inert atmospheric gas.
    Type: Application
    Filed: September 2, 2011
    Publication date: June 20, 2013
    Applicant: BRIDGESTONE CORPORATION
    Inventor: Taro Miyamoto
  • Publication number: 20130126800
    Abstract: A thermoelectric oxide material having at least one family of periodic planar crystallographic defects, where the planar defect interspacings match a significant fraction of the phonon dispersion (free path distribution) in the oxide material. As an example, a sub-stoichiometric, composite thermoelectric oxide material can be represented by the formula NbO2.5?x:M, where 0<x?1.5 and M represents a second phase. Optionally, the material may be doped. The thermoelectric material displays a thermoelectric figure of merit (ZT) of 0.15 or higher at 1050K. Methods of forming the thermoelectric materials involve combining and reacting raw materials under reducing conditions to form the sub-stoichiometric oxide composite. The second phase may promote reduction of the oxide. The reaction product can be sintered to form a dense thermoelectric material.
    Type: Application
    Filed: November 17, 2011
    Publication date: May 23, 2013
    Inventor: Monika Backhaus-Ricoult
  • Publication number: 20130094116
    Abstract: A PTC conductive composite material and the overcurrent protection device made of the material are disclosed. The PTC conductive composite material includes: (a) A matrix of crystalline polymer material at least, occupies 20%-70% of the volume fraction of the PTC conductive composite material, (b) One kind of conductive filler occupies 30%-80% of the volume fraction of the material. The solid solution conductive filler is uniformly dispersed in the polymer material, whose average particle size ranges from 0.1 ?m to 10 ?m, and the volume resistivity is no more than 300 ??·cm. The overcurrent protection device prepared by using the PTC conductive composite material as described above includes two metal foils, which are made into a sandwich, separated by a layer of the PTC conductive composite material. And the advantages of the overcurrent protection device of the invention are low resistance, good reproducibility of resistance and well PTC intensity.
    Type: Application
    Filed: September 13, 2010
    Publication date: April 18, 2013
    Inventors: Quan-quan Yang, Zhengping Liu, Yutang Liu, Daohua Gao, Jun Wang, Congwu Li
  • Publication number: 20130075669
    Abstract: Composite materials comprising titanium diboride, silicon carbide and carbon-containing scavenger additions are useful in electrolytic aluminum production cells. The carbon-containing scavenger additions may include tungsten carbide, boron carbide and/or carbon. The amounts of titanium diboride, silicon carbide and carbon-containing scavenger are controlled in order to provide optimum perfonnance. The titanium diboride/silicon carbide composite materials may be used as cathodes in electrolytic aluminum production cells and are electrically conductive, exhibit desirable aluminum wetting behavior, and are capable of withstanding exposure to molten cryolite, molten aluminum and oxygen at elevated temperatures during operation of such cells.
    Type: Application
    Filed: September 28, 2011
    Publication date: March 28, 2013
    Applicant: Kennametal Inc.
    Inventors: Sean Erin Landwehr, Roberta R. Yeckley
  • Patent number: 8377339
    Abstract: An apparatus and a method to form a thick coat by an in-liquid pulsed electric discharge treatment, the electrode contains 40 volume % or more metallic material that is not carbonized or is hard to be carbonized.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: February 19, 2013
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Ishikawajima-Harima Heavy Industries Co., Ltd.
    Inventors: Akihiro Goto, Masao Akiyoshi, Hiroyuki Ochiai, Mitsutoshi Watanabe
  • Publication number: 20130032765
    Abstract: A composite for providing electromagnetic shielding including a plurality of elongate nanostructures; and a plurality of elongate conductive elements.
    Type: Application
    Filed: August 4, 2011
    Publication date: February 7, 2013
    Inventors: Vladimir Alexsandrovich Ermolov, Markku Anttoni Oksanen, Khattiya Chalapat, Gheorghe Sorin Paraoanu
  • Publication number: 20130021134
    Abstract: A PTC material composition for making a PTC circuit protection device comprises a PTC polymer unit and a conductive filler containing a plurality of titanium carbide particles. The titanium carbide particles have a residual oxygen content greater than 0.3 wt % based on the weight of the titanium carbide particles.
    Type: Application
    Filed: September 22, 2011
    Publication date: January 24, 2013
    Inventors: Jack Jih-Sang CHEN, Chi-Hao Gu, Chang-Hung Jiang
  • Patent number: 8282796
    Abstract: A carbonaceous substrate of the present invention is such that an X-ray diffraction pattern thereof is a complex profile and includes at least two (002) diffraction lines; and the substrates contains crystallites with different interlayer spacings. Further, in the X-ray diffraction pattern, (002) diffraction lines between 2?=10° and 2?=30° have an asymmetric shape; and the X-ray diffraction pattern includes at least two pattern components which are a diffraction line whose center is at 2?=26° and a diffraction line whose center is at a lower angle than 2?=26°. Further, the carbonaceous substrate contains crystals wherein the periodic distance d002 is 0.34 nm or more and the crystallite size Lc002 is 20 nm or less based on the X-ray diffraction lines. An electrodes for fluorine electrolysis of the present invention includes the carbonaceous substrate on which a conductive diamond thin film is formed.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: October 9, 2012
    Assignee: Toyo Tanso Co., Ltd.
    Inventors: Rie Tao, Takanori Kawano, Yoshio Shodai
  • Patent number: 8241529
    Abstract: (Problems) To provide a coating film which excels in corrosion resistance and processability as well as high durability and little suffers from electrification. (Means for Solving Problems) A fluororesin composite material including: a fluororesin microencapsulating silicon carbide, an amount of the silicon carbide being 5 to 9% by weight with respect to a total of the fluororesin composite material; and at least one of polyphenylene sulfide (PPS), polyether sulphone (PES) and polyether ether ketone (PEEK).
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: August 14, 2012
    Assignee: Nippon Fusso Co., Ltd
    Inventor: Naoki Fukumura
  • Publication number: 20120186723
    Abstract: The present invention provides a Ti3SiC2 based material that exhibits excellent arc resistance, an electrode, a spark plug, and methods of manufacturing the same. A Ti3SiC2 based material according to the present invention includes Ti3SiC2 as a main phase, the Ti3SiC2 based material having a TiC content of 0.5 mass % or less and an open porosity of 0.5% or less. It may be preferable that 0 to 30 mol % of Si contained in the main phase Ti3SiC2 be substituted with Al. A spark plug according to the present invention includes an electrode formed using the Ti3SiC2 based material.
    Type: Application
    Filed: January 26, 2012
    Publication date: July 26, 2012
    Applicant: NGK Insulators, Ltd.
    Inventors: Tetsuya HATTORI, Takafumi Kimata, Yoshimasa Kobayashi
  • Publication number: 20120175639
    Abstract: It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide. The tantalum carbide is formed on the surface of tantalum or a tantalum alloy by placing the tantalum or tantalum alloy in a vacuum heat treatment furnace, heat-treating the tantalum or tantalum alloy under a condition where a native oxide layer of Ta2O5 formed on the surface of tantalum or tantalum alloy is sublimated to remove the Ta2O5, introducing a carbon source into the vacuum heat treatment furnace, and then heat-treating.
    Type: Application
    Filed: March 16, 2012
    Publication date: July 12, 2012
    Applicant: THE NEW INDUSTRY RESEARCH ORGANIZATION
    Inventors: Tadaaki Kaneko, Yasushi Asaoka, Naokatsu Sano
  • Patent number: 8193469
    Abstract: Ceramic igniters are provided that comprise at least three zones of differing electrical resistance, preferably in sequence a first conductive zone of relatively low resistance, a power booster or enhancement zone of intermediate resistance, and a further hot or ignition zone of high resistance. Igniters of the invention can provide extremely high speeds (low time-to-temperature).
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: June 5, 2012
    Assignee: Coorstek, Inc.
    Inventor: Craig A. Willkens
  • Patent number: 8189636
    Abstract: Detecting electrical overstress events in electronic circuitry such as optical emitters. In one example embodiment, a laser includes an active area and a contact region in electrical communication with the active area. A portion of the contact region is configured to manifest a change in a visual attribute of the portion in response to exposure of the portion to an electrical overstress event.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: May 29, 2012
    Assignee: Finisar Corporation
    Inventor: David Todd Mathes
  • Publication number: 20120126039
    Abstract: Industrial blast nozzles are disclosed which have liners made, at least in part, from a SiAlON-containing ceramic material which has a surface resistance of about 12 megaOhms or less and an erosion rate of about 1.9×10?4 cm3/g or less. The SiAlON-containing ceramic material preferably contains a two-phase SiAlON, silicon carbide, and a conductive phase that is one or more of titanium nitride, tantalum nitride, zirconium nitride, and titanium carbide.
    Type: Application
    Filed: November 18, 2010
    Publication date: May 24, 2012
    Applicant: Kennametal, Inc.
    Inventors: Russell L. Yeckley, Jie Wu
  • Publication number: 20120121916
    Abstract: The present teachings provide a fuser member. The fuser member includes a substrate layer and a surface layer. The surface layer includes functionalized polyfluoropolyether and functionalized polybutadiene in a weight ratio of from about 20/80 to about 80/20. A method of manufacturing the fuser member is also disclosed.
    Type: Application
    Filed: November 17, 2010
    Publication date: May 17, 2012
    Applicant: XEROX CORPORATION
    Inventors: Jin Wu, Lanhui Zhang, Lin Ma
  • Publication number: 20120104325
    Abstract: Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.
    Type: Application
    Filed: April 23, 2010
    Publication date: May 3, 2012
    Applicant: THE UNIVERSITY OF CHICAGO
    Inventors: Dmitri V. Talapin, Maksym V. Kovalenko, Jong-Soo Lee, Chengyang Jiang