Titanium Or Zirconium Compound Patents (Class 252/520.2)
  • Patent number: 7527753
    Abstract: Provided is a thermally conductive composition which shows a low thermal resistance, and good releasability after service. For example, one composition includes an acrylic-based thermally conductive composition comprising a binder component containing a crystalline acrylic polymer with an alkyl group of 18 carbons or more and a thermally conductive filler.
    Type: Grant
    Filed: March 19, 2004
    Date of Patent: May 5, 2009
    Assignee: 3M Innovative Properties Company
    Inventors: Yuji Hiroshige, Yoshinao Yamazaki
  • Patent number: 7524439
    Abstract: In a positive electrode of a non-aqueous electrolyte battery, at least one metal oxide selected from the group consisting of titanium dioxide, alumina, zinc oxide, chromium oxide, lithium oxide, nickel oxide, copper oxide and iron oxide is dispersed between particles of an active substance for the positive electrode, whereby a discharge capacity or a discharge-recharge capacity of the non-aqueous electrolyte battery is improved.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: April 28, 2009
    Assignee: Bridgestone Corporation
    Inventors: Masashi Otsuki, Shinichi Eguchi, Hiroshi Kanno
  • Publication number: 20090081549
    Abstract: A composition for use in an electrochemical redox reaction is described. The composition may comprise a material represented by a general formula MyXO4 or AxMyXO4, where each of A (where present), M, and X independently represents at least one element, O represents oxygen, and each of x (where present) and y represent a number, and an oxide of at least one of various elements, wherein the material and the oxide are cocrystailine, and/or wherein a volume of a crystalline structural unit of the composition may be different than a volume of a crystalline structural unit of the material alone. An electrode comprising such a composition is also described, as is an electrochemical cell comprising such an electrode. A process of preparing a composition for use in an electrochemical redox reaction is also described.
    Type: Application
    Filed: November 5, 2008
    Publication date: March 26, 2009
    Inventors: Ben-Jie Liaw, Wen-Ren Liu, Sheng-Shih Chang
  • Patent number: 7507682
    Abstract: In manufacturing a ceramic multi-layer wiring substrate which is formed by stacking a plurality of ceramic layers and which includes an internal wiring, a ceramic paste is printed using a screen printing process on a part of a ceramic green sheet to be a ceramic layer having the internal wiring formed thereon which part does not include the internal wiring, to form between the ceramic layers a ceramic filling layer including a same ceramic component as that in the ceramic layers which ceramic filling layer is not formed on the internal wiring. The ceramic paste includes a ceramic component, an acrylic resin, and a cellulose resin, and loss factor tan ? of the paste represented by (loss modulus)/(storage modulus) in a dry condition after printing is equal to or greater than loss factor tan ? of a conductor paste layer to be the internal wiring in a dry condition.
    Type: Grant
    Filed: February 23, 2005
    Date of Patent: March 24, 2009
    Assignee: Kyocera Corporation
    Inventors: Hiroyuki Takase, Shinichi Suzuki, Yutaka Iki
  • Patent number: 7501081
    Abstract: A nanostructured monolithic titanium boride (TiB) material and methods of forming such a material are disclosed and described. This material has a room-temperature four-point flexural strength about three times that of commercially available titanium diboride (TiB2). The achievement of nanostructured internal microstructural arrangement having a network of interconnected titanium monoboride whiskers affords a very high strength to this material above some of the best ceramic materials available in the market. The material contains a small amount of titanium and a densifier, but it is largely made of TiB phase with substantially no TiB2. The nanostructured monolithic titanium boride material can be formed by high temperature processing of a powder precursor having carefully selected weight and size distributions of titanium powder, titanium diboride powder, and densifier powder.
    Type: Grant
    Filed: January 25, 2007
    Date of Patent: March 10, 2009
    Assignee: University of Utah Research Foundation
    Inventor: K. S. Ravi Chandran
  • Publication number: 20090050859
    Abstract: A cathode material particle comprising a plurality of cathode material cores and each cathode material core having plurality of grains and each grain being uniformly covered with a nano-metal oxide layer, wherein a thickness of the nano-metal oxide layer is 1 nm to 100 nm. The cathode material has excellent safety (good thermal stability), high-capacity, good cycleability and-high-rate charging or discharging capability.
    Type: Application
    Filed: October 10, 2008
    Publication date: February 26, 2009
    Applicant: Industrial Technology Research Institute
    Inventors: Mao-Huang Liu, Jin-Ming Chen, Tzu-Hwa Cheng
  • Publication number: 20090050856
    Abstract: Embodiments described herein provide for a composition of voltage switchable dielectric (VSD) material that includes a concentration of modified high-aspect ratio (HAR) particles. In an embodiment, at least a portion of the concentration includes HAR particles are surface-modified to provide core-shell HAR particles. As an alternative or addition, a portion of the concentration includes HAR particles that are surface-modified to have activated surfaces.
    Type: Application
    Filed: August 18, 2008
    Publication date: February 26, 2009
    Inventors: Lex Kosowsky, Robert Fleming, Junjun Wu
  • Patent number: 7476376
    Abstract: Disclosed is metal composite oxides having the new crystal structure. Also disclosed are ionic conductors including the metal composite oxides and electrochemical devices comprising the ionic conductors. The metal composite oxides have an ion channel formed for easy movement of ions due to crystallographic specificity resulting from the ordering of metal ion sites and metal ion defects within the unit cell. Therefore, the metal composite oxides according to the present invention are useful in an electrochemical device requiring an ionic conductor or ionic conductivity.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: January 13, 2009
    Assignee: LG Chem, Ltd.
    Inventors: Seung Tae Hong, Yun Ho Roh, Eung Je Lee, Mi Hyae Park
  • Patent number: 7459105
    Abstract: A nanostructured monolithic titanium boride (TiB) material and methods of forming such a material are disclosed and described. This material has a room-temperature four-point flexural strength about three times that of commercially available titanium diboride (TiB2). The achievement of nanostructured internal microstructural arrangement having a network of interconnected titanium monoboride whiskers affords a very high strength to this material above some of the best ceramic materials available in the market. The material contains a small amount of titanium, but it is largely made of TiB phase with substantially no TiB2. The nanostructured monolithic titanium boride material can be formed by high temperature processing of a powder precursor having carefully selected weight and size distributions of titanium and titanium diboride powders. Potential applications of this material can include wear resistant components such as die inserts for extrusion dies, nozzles, armor, electrodes for metal refining etc.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: December 2, 2008
    Assignee: University of Utah Research Foundation
    Inventor: K. S. Ravi Chandran
  • Publication number: 20080286898
    Abstract: A material composition having a core-shell microstructure suitable for manufacturing a varistor having outstanding electrical properties, the core-shell microstructure of the material composition at least comprising a cored-structure made of a conductive or semi-conductive material and a shelled-structure made from a glass material to wrap the cored-structure, and electrical properties of the varistors during low temperature of sintering process can be decided and designated by precisely controlling the size of the grain of the cored-structure and the thickness and insulation resistance of the insulating layer of the shelled-structure of material composition.
    Type: Application
    Filed: May 17, 2007
    Publication date: November 20, 2008
    Applicant: BEE FUND BIOTECHNOLOGY INC.
    Inventors: Ching-Hohn Lien, Cheng-Tsung Kuo, Jun Nan Lin, Jie-An Zhu, Li-Yun Zhang, Wei-Cheng Lien
  • Patent number: 7449132
    Abstract: The present invention provides a proton conductive membrane having capabilities of self-generating water and maintaining water, excellent ion conductivity and excellent effect of inhibiting crossover and usable for solid polymer electrolyte type fuel cells and also provides a proton conductive composition used for preparing the proton conductive membrane. The proton conductive composition comprises 100 parts by weight of a polyarylene having a sulfonic group and 0.01 to 80 parts by weight of at least one metal catalyst selected from the group consisting of platinum, gold, palladium, rhodium, iridium and ruthenium, or comprises 100 parts by weight of a polyarylene having a sulfonic group, 0.01 to 80 parts by weight of the metal catalyst, and 0.01 to 50 parts by weight of metal oxide fine particles and/or fibers in total.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: November 11, 2008
    Assignees: JSR Corporation, Honda Motor Co., Ltd.
    Inventors: Mayumi Kakuta, Toshihiro Otsuki, Nagayuki Kanaoka, Masaaki Nanaumi, Yoichi Asano, Ryoichiro Takahashi
  • Patent number: 7438837
    Abstract: A method of producing a solid electrolyte (3, 13) is disclosed wherein solid electrolyte material is prepared having a composition expressed by a formula: (1-x) ZrO2 {xSc2O3 (where x is a number equal to or greater than 0.05 and equal to or less than 0.15), and a spark plasma method is carried out to sinter solid electrolyte material, resulting in a solid electrolyte. Such spark plasma method is executed by applying first compression load, equal to or less that 40 MPa, to solid electrolyte material, to sinter the solid electrolyte material to obtain sintered material, which is then cooled by applying second compression load, less than first compression load, to the sintered material, resulting in a solid electrolyte.
    Type: Grant
    Filed: March 19, 2004
    Date of Patent: October 21, 2008
    Assignees: Nissan Motor Co., Ltd., National Institute of Advanced Industrial Science and Technology
    Inventors: Masaharu Hatano, Mitsugu Yamanaka, Makoto Uchiyama, Kenji Furuya, Yoshio Akimune, Masaya Okamoto
  • Patent number: 7435702
    Abstract: The photocatalyst based on a composite WO3—SiC/TiO2 semiconductor and subjected to radiation whose wavelength is at least partly less than 400 nm gives1 photocatalytic oxidation of volatile organic compounds and leads to their total mineralisation into CO2 and H2O. The process for the photocatalytic purification of industrial, agricultural or domestic gaseous effluent may be conducted at room pressure and temperature. Its conversion rate is high and stable.
    Type: Grant
    Filed: October 28, 2002
    Date of Patent: October 14, 2008
    Assignees: SICAT, Centre National de la Recherche Scientifique, Universite Louis Pasteur de Strasbourg
    Inventors: Valerie Spitzer-Keller, Pierre Bernhardt, Cuong Pham-Huu, Francois Garin, Marc J. Ledoux, Charlotte Pham-Huu
  • Publication number: 20080237549
    Abstract: A novel phosphor material which can be manufactured without utilizing a fault formation process which is difficult to be controlled. The phosphor material has a eutectic structure formed of a base material that is a semiconductor formed of a Group 2 element and a Group 6 element, a semiconductor formed of a Group 3 element and a Group 5 element, or a ternary phosphor formed of an alkaline earth metal, a Group 3 element, and a Group 6 element, and a solid solution material including a transition metal. The phosphor material is suited for an EL element because of less variation of characteristic since defect formation process in which stress is applied externally to form a defect inside of a phosphor material is not needed.
    Type: Application
    Filed: March 24, 2008
    Publication date: October 2, 2008
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasuo NAKAMURA, Takahiro KAWAKAMI, Rie MATSUBARA, Makoto HOSOBA
  • Publication number: 20080224104
    Abstract: The invention relates to a method for the preparation of stable suspensions of metal oxide nanoparticles, in which uncharged metal oxide nanoparticles are first treated with a non-ionic surfactant in a polar organic solvent under certain conditions, and the suspension obtained is then treated with a charging solution. The suspensions of the invention can be used for preparation of high quality metal oxide films by electrophoresis deposition (EPD).
    Type: Application
    Filed: August 3, 2006
    Publication date: September 18, 2008
    Inventors: Arie Zaban, Larissa Grinis, Asher Ofir
  • Patent number: 7413687
    Abstract: A device for conducting protons at a temperature below 550° C. includes a LAMOX ceramic body characterized by an alpha crystalline structure.
    Type: Grant
    Filed: June 24, 2005
    Date of Patent: August 19, 2008
    Assignee: UT - Battelle, LLC
    Inventors: Timothy R. Armstrong, Edward A. Payzant, Scott A. Speakman, Martha Greenblatt
  • Patent number: 7414002
    Abstract: The present invention provides an aluminum oxide-titanium nitride sintered body having good resistance to electrostatic damage and small variation in volume resistivity. The aluminum oxide-titanium nitride sintered body is mainly composed of 65 to 85% by weight of aluminum oxide and titanium nitride constituting the rest. The average of the sum of the crystal grain sizes of the aluminum oxide and the titanium nitride is 0.4 to 2.0 ?m. The aluminum oxide has a mean crystal grain size of 0.5 to 2.2 ?m and the titanium nitride has a mean crystal grain size of 0.2 to 1.6 ?m.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: August 19, 2008
    Assignee: Kyocera Corporation
    Inventors: Minoru Nakasuga, Kazuhide Kusano
  • Publication number: 20080190355
    Abstract: The invention relates to substrates of semi-insulating silicon carbide used for semiconductor devices and a method for making the same. The substrates have a resistivity above 106 Ohm-cm, and preferably above 108 Ohm-cm, and most preferably above 109 Ohm-cm, and a capacitance below 5 pF/mm2 and preferably below 1 pF/mm2. The electrical properties of the substrates are controlled by a small amount of added deep level impurity, large enough in concentration to dominate the electrical behavior, but small enough to avoid structural defects. The substrates have concentrations of unintentional background impurities, including shallow donors and acceptors, purposely reduced to below 5·1016 cm?3, and preferably to below 1·1016 cm?3, and the concentration of deep level impurity is higher, and preferably at least two times higher, than the difference between the concentrations of shallow acceptors and shallow donors.
    Type: Application
    Filed: July 6, 2005
    Publication date: August 14, 2008
    Applicant: II-VI INCORPORATED
    Inventors: Jihong Chen, Ilya Zwieback, Avinash K. Gupta, Donovan L. Barrett, Richard H. Hopkins, Edward Semenas, Thomas A. Anderson, Andrew E. Souzis
  • Publication number: 20080173994
    Abstract: A release film for soft composite materials is provided. The release film contains a film with a closely packed self-assembled monolayer. A method of applying soft composite materials to a substrate without loss of the soft composite material to the release film is also provided. The method is useful in applications such as applying thermal pastes to semiconductor packaging.
    Type: Application
    Filed: January 24, 2007
    Publication date: July 24, 2008
    Applicant: International Business Machines Corporation
    Inventor: Ijeoma M. Nnebe
  • Publication number: 20080174228
    Abstract: A dielectric layer composition includes a ceramic material, a binder, a solvent, and an additive, the additive being a selenium oxide additive or two or more of a selenium oxide, a vanadium oxide, a molybdenum oxide, and/or a cerium oxide.
    Type: Application
    Filed: January 11, 2008
    Publication date: July 24, 2008
    Inventor: Jin-Keun Jung
  • Patent number: 7384578
    Abstract: Disclosed is a modified electroconductive polymer material, which comprises a metal filled in a space between the chains of an electroconductive polymer. The metal is oxidized (partially formed as a hydroxide) through a chemical reaction between three substances consisting of the metal, a cation radical/dication, and absorbed water. The metal has a work function less than that of the electroconductive polymer. The contact between the metal and the electroconductive polymer is kept in the state of coexistence between three substances consisting of the metal, the cation radical/dication and the absorbed water. This allows an electroconductive polymer material to have enhanced durability against oxidation/reduction, and controlled conductivity.
    Type: Grant
    Filed: September 3, 2003
    Date of Patent: June 10, 2008
    Assignee: Chisso Corporation
    Inventors: Katsuyoshi Hoshino, Hiroyuki Watanabe
  • Publication number: 20080116423
    Abstract: Provided herein are electroactive agglomerated particles, which comprise nanoparticles of a first electroactive material and nanoparticles of a second electroactive materials, and processes of preparation thereof.
    Type: Application
    Filed: October 16, 2007
    Publication date: May 22, 2008
    Inventors: Jiang Fan, Robert M. Spotnitz
  • Publication number: 20080110497
    Abstract: [PROBLEMS] To develop metal microparticles useful in dye-sensitized solar cell, etc. and to provide a photoelectric transducer capable of exhibiting enhanced release voltage in dye-sensitized solar cell. [MEANS FOR SOLVING PROBLEMS] There are provided modified titanium oxide microparticles comprised of titanium oxide and one or two or more types of nontitanic metal oxides (including silicon oxides) selected from the group consisting of periodic-table group IB oxides, group IIA oxides, group IIB oxides, group IIIA oxides, group IIIB oxides, group IVA oxides other than titanium oxides, group IVB oxides, group VIA oxides, group VIII oxides and vanadium oxides. Further, there is provided a photoelectric transducer making use of the modified titanium oxide microparticles.
    Type: Application
    Filed: January 26, 2006
    Publication date: May 15, 2008
    Applicant: NIPPON KAYAKU KABUSHIKI KAISHA
    Inventors: Teruhisa Inoue, Koichiro Shigaki, Takayuki Hoshi, Masayoshi Kaneko
  • Patent number: 7368097
    Abstract: Process for preparing nanocrystalline lithium titanate spinels by reacting lithium hydroxide and a titanium alkoxide at elevated temperature in a reaction mixture which forms water of reaction.
    Type: Grant
    Filed: April 22, 2004
    Date of Patent: May 6, 2008
    Assignee: BASF Aktiengesellschaft
    Inventor: Hans-Josef Sterzel
  • Patent number: 7347958
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k?m or less.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: March 25, 2008
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
  • Patent number: 7288217
    Abstract: An electroconductive compound in a flake form, characterized in that it comprises a titanium oxide which has an average long diameter of 1 to 100 ?m and an average thickness of 0.01 to 1.5 ?m, and contains potassium in an amount of 0.3 to 5 wt % in terms of potassium oxide (K2O) and, formed on the surface thereof, a first electroconductive layer comprising a tin oxide containing antimony and, formed on the first electroconductive layer, a second electroconductive layer comprising a tin oxide.
    Type: Grant
    Filed: July 16, 2003
    Date of Patent: October 30, 2007
    Assignee: Otsuka Chemical Co., Ltd.
    Inventors: Yukiya Hareyama, Hidetoshi Ogawa
  • Patent number: 7261833
    Abstract: Aqueous coating slurries useful in depositing a dense coating of a ceramic electrolyte material (e.g., yttrium-stabilized zirconia) onto a porous substrate of a ceramic electrode material (e.g., lanthanum strontium manganite or nickel/zirconia) and processes for preparing an aqueous suspension of a ceramic electrolyte material and an aqueous spray coating slurry including a ceramic electrolyte material. The invention also includes processes for depositing an aqueous spray coating slurry including a ceramic electrolyte material onto pre-sintered, partially sintered, and unsintered ceramic substrates and products made by this process.
    Type: Grant
    Filed: July 12, 2004
    Date of Patent: August 28, 2007
    Assignee: NexTech Materials, Ltd.
    Inventors: Matthew M. Seabaugh, Scott L. Swartz, William J. Dawson, Buddy E. McCormick
  • Patent number: 7141186
    Abstract: An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 k.cm or less.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: November 28, 2006
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventors: Yoshiyuki Abe, Noriko Ishiyama, Go Ohara
  • Patent number: 7138076
    Abstract: In a dielectric composition for use in formation of a dielectric layer in a plasma display panel, comprising glass powder, the glass powder is powder of glass which contains PbO of 50% or less and CuO as one of essential elements contained in the glass for preventing color change of the dielectric layer from being caused due to reaction with Ag electrodes in the plasma display panel. Ceramics powder can be mixed with the glass powder. The dielectric composition can also be provided in a form of paste, alternatively in a form of a green sheet.
    Type: Grant
    Filed: April 24, 2003
    Date of Patent: November 21, 2006
    Assignee: Nippon Electric Glass Co., Ltd.
    Inventors: Norikazu Fukushima, Hiroyuki Oshita, Takayuki Mito, Masahiko Ouji, Kazuo Hadano
  • Patent number: 7094719
    Abstract: Aspects of the present invention may be found in an electrostatic dissipative ceramic component having a stabilized zirconia base, a surface resistivity between 1×105 and 1×1012 ohms per square and at least 2 percent by volume scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent. Further aspects of the invention may be found in an electrostatic dissipative ceramic material having stabilized zirconia, a resistivity modifier, and a scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent of the ceramic material. The resistivity modifier may be present in amounts between 5 and 30 weight percent. The scattering material may comprise at least 2 volume percent of the electrostatic dissipative ceramic material. The component may be used in the manufacturing of electronic component such as hard drives.
    Type: Grant
    Filed: June 27, 2005
    Date of Patent: August 22, 2006
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventor: Matthew Simpson
  • Patent number: 7091154
    Abstract: A perovskite titanium-containing composite oxide particle having a composition represented by general formula (I), where the specific surface area is about 10 to about 200 m2/g, the specific surface area diameter D1 of primary particles defined by formula (II) is about 10 to about 100 nm, and a D2/D1 ratio of the average particle size D2 of secondary particles to D1 is about 1 to about 10: M(TiO3)??(I) wherein M is at least one of Ca, Sr, Ba, Pb, or Mg, D1=6/?S??(II) wherein ? is the density of the particles, and S is the specific surface area of the particles is disclosed. The present invention has a small particle size and excellent dispersion properties, so that the particle is suitable for application to functional materials.
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: August 15, 2006
    Assignee: Showa Denko Kabushiki Kaisha
    Inventors: Masahiro Ohmori, Akihiko Kotera
  • Patent number: 7056454
    Abstract: An ion generator with increased generation of negative ions and its method of manufacture are disclosed. For an ion generator of the present invention, a titanium oxide powder is added to an ion generator that generates negative ions.
    Type: Grant
    Filed: October 30, 2002
    Date of Patent: June 6, 2006
    Inventor: Tomozo Fujino
  • Patent number: 7049031
    Abstract: A positive electrode for a non-aqueous lithium cell comprising a LiMn2?xMxO4 spinel structure in which M is one or more metal cations with an atomic number less than 52, such that the average oxidation state of the manganese ions is equal to or greater than 3.5, and in which 0?x?0.15, having one or more lithium spine oxide LiM?2O4 or lithiated spinel oxide Li1+yM?2O4 compounds on the surface thereof in which M? are cobalt cations and in which 0?y?1.
    Type: Grant
    Filed: January 28, 2003
    Date of Patent: May 23, 2006
    Assignee: The University of Chicago
    Inventors: Christopher S. Johnson, Michael M. Thackeray, Arthur J. Kahaian
  • Patent number: 7018566
    Abstract: The invention concerns novel compounds derived from La2Mo2O9 and their use as ion conductors.
    Type: Grant
    Filed: April 5, 2001
    Date of Patent: March 28, 2006
    Assignee: Centre National de la Recherche Scientifique
    Inventors: François Goutenoire, Philippe Lacorre
  • Patent number: 6958303
    Abstract: The invention provides partially stabilised zirconia and alumina based electro-static dissipative or ESD ceramic compositions. The proposed ceramic compositions include specific amounts of dopants comprising one or more metal oxides selected from iron oxide, chromium oxide and titanium oxide. The proposed ESD ceramic materials are made into useful industrial products by injection moulding and sintering technology. A novel binder system may optionally be used to make injection mouldable feedstock. Useful products produced by the invention include, for example, ESD ceramic tweezers tips, ESD ceramic dispensing needles, ESD ceramic scissors and blades and ESD ceramic wire bonding capillaries which retain their ESD properties at relatively low temperatures, for example, service temperatures from 25 to 500° C.
    Type: Grant
    Filed: May 30, 2003
    Date of Patent: October 25, 2005
    Assignee: Dou Yee Technologies Pte Ltd.
    Inventors: Jian Guo Zhang, Hwey Eng Liow, Bo Zhang
  • Patent number: 6946417
    Abstract: Aspects of the present invention may be found in an electrostatic dissipative ceramic component having a stabilized zirconia base, a surface resistivity between 1×105 and 1×1012 ohms per square and at least 2 percent by volume scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent. Further aspects of the invention may be found in an electrostatic dissipative ceramic material having stabilized zirconia, a resistivity modifier, and a scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent of the ceramic material. The resistivity modifier may be present in amounts between 5 and 30 weight percent. The scattering material may comprise at least 2 volume percent of the electrostatic dissipative ceramic material. The component may be used in the manufacturing of electronic component such as hard drives.
    Type: Grant
    Filed: May 21, 2003
    Date of Patent: September 20, 2005
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventor: Matthew Simpson
  • Patent number: 6884314
    Abstract: The present invention relates generally to conductive, silicone-based compositions, with improved initial adhesion and reduced micro-voiding. More specifically, the present invention relates to a conductive, silicone-based composition, which includes a polyorganosiloxane, a silicone resin, and a conductive filler component.
    Type: Grant
    Filed: April 23, 2001
    Date of Patent: April 26, 2005
    Assignee: Henkel Corporation
    Inventors: Robert P. Cross, Lester D. Bennington
  • Patent number: 6878304
    Abstract: A highly accurate reduction resistant thermistor exhibiting stable resistance characteristics even under conditions where the inside of a metal case of a temperature sensor becomes a reducing atmosphere, wherein when producing the thermistor comprised of a mixed sintered body (M1 M2)O3.AOx, the mean particle size of the thermistor material containing the metal oxide, obtained by heat treating, mixing, and pulverizing the starting materials, is made smaller than 1.0 ?m and the sintered particle size of the mixed sintered body, obtained by shaping and firing this thermistor material, is made 3 ?m to 20 ?m so as to reduce the grain boundaries where migration of oxygen occurs, suppress migration of oxygen, and improve the reduction resistance.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: April 12, 2005
    Assignees: Nippon Soken Inc., Denso Corporation
    Inventors: Itsuhei Ogata, Daisuke Makino, Kaoru Kuzuoka, Atsushi Kurano
  • Patent number: 6833089
    Abstract: A surface of a glass plate is coated with a first n-type semiconductor film which is a 50 nm-thick niobium oxide film as a primer layer. The primer layer is coated with a 250 nm-thick photocatalyst film comprising titanium oxide. Thus, an article having a photocatalytically active surface is obtained. The two coating films can be formed by sputtering. The first n-type semiconductor film as the primer layer is selected so as to have a larger energy band gap than the titanium oxide. Due to this constitution, more holes are generated near the film surface. This article can be free from the problem of conventional titanium oxide films having photocatalytic activity that it is difficult to generate many surface holes contributing to photocatalytic activity, because electrons and holes generated by charge separation recombine within the film, making it impossible to effectively heighten catalytic activity.
    Type: Grant
    Filed: August 2, 2000
    Date of Patent: December 21, 2004
    Assignee: Nippon Sheet Glass Co., Ltd.
    Inventors: Tetsuro Kawahara, Kazuhiro Doushita, Hiroyuki Inomata, Etsuo Ogino, Kenji Mori, Yoshifumi Kijima, Hiroaki Tada
  • Patent number: 6811725
    Abstract: Described is a compliant and crosslinkable thermal interface material of at least one silicone resin mixture, at least one wetting enhancer and at least one thermally conductive filler, and a method of making and using same; as well as a method of improving thermal conductivity of polymer and resin systems.
    Type: Grant
    Filed: May 27, 2003
    Date of Patent: November 2, 2004
    Assignee: Honeywell International Inc.
    Inventors: My N. Nguyen, James Grundy
  • Patent number: 6797382
    Abstract: A crosslinkable thermal interface material is produced by combining at least one rubber compound, at least one amine resin and at least one thermally conductive filler. This interface material takes on the form of a liquid or “soft gel”. The gel state is brought about through a crosslinking reaction between the at least one rubber compound composition and the at least one amine resin composition. Once the foundation composition that comprises at least one rubber compound, at least one amine resin, and at least one thermally conductive filler has been prepared, the composition must be compared to the needs of the electronic component, vendor, or electronic product to determine if a phase change material and/or at least one solvent is needed to change some of the physical properties of the composition.
    Type: Grant
    Filed: September 9, 2002
    Date of Patent: September 28, 2004
    Assignee: Honeywell International Inc.
    Inventors: My Nguyen, Kim-Chi Le
  • Patent number: 6773636
    Abstract: There are provided: (1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously: (i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and (ii) a target (B) for sputtering, which comprises Sb, (2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and (3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.
    Type: Grant
    Filed: March 22, 2002
    Date of Patent: August 10, 2004
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Takeshi Hattori, Kunio Saegusa, Yuzo Shigesato
  • Patent number: 6740261
    Abstract: The thermistor element of the present invention is composed of a mixed sintered body aM1M2O3bY2O3 of a composition M1M2O3 (wherein M1 is Y, and M2 is at least one element selected from the elements such as Cr, Mn, Ti, etc.) as a perovskite compound and Y2O3, wherein molar fractions a and b satisfy the relations 0.05≦a<1.0, 0<b≦0.95 and a+b=1. Another wide-range type thermistor element of the present invention is composed of a perovskite compound M1 (M2M3)O3, wherein M1 is at least one element selected from the elements of the groups II and IIIA excluding La in the Periodic Table, and each of M2 and M3 is at least one element selected from the elements of the groups IIB, IIIB, IVA, VA, VIA, VIIA and VIII. a and b satisfy the relations a+b=1 and 0<b<0.1, where a is a molar fraction of M2 and b is a molar fraction of M3 in M1(M2M3)O3.
    Type: Grant
    Filed: November 28, 2000
    Date of Patent: May 25, 2004
    Assignees: Denso Corporation, Nippon Soken, Inc.
    Inventors: Itsuhei Ogata, Takumi Kataoka, Eturo Yasuda, Kaoru Kuzuoka, Masanori Yamada
  • Publication number: 20040084659
    Abstract: The present invention provides a semiconductive glaze product which exhibits low thermal expansion coefficient without adversely affecting other glaze characteristics, and which, when applied to an insulator, attains enhanced mechanical strength of the insulator; a method for producing the semiconductive glaze product; and an insulator coated with the semiconductive glaze product. The semiconductive glaze product contains a glaze composition and a flux, the glaze composition containing a KNaO—MgO—CaO—Al2O3—SiO2-based base glaze in which the compositional proportions of basic components; i.e., KNaO, MgO, and CaO, as represented by the Seger formula, are 0.1 to 0.4, 0.2 to 0.6, and balance, respectively, and containing a metal oxide composition including tin oxide and antimony oxide, wherein the amount of the flux is 10 parts by weight or less on the basis of 100 parts by weight of the glaze composition.
    Type: Application
    Filed: September 12, 2003
    Publication date: May 6, 2004
    Applicant: NGK Insulators, Ltd.
    Inventors: Osamu Imai, Masaru Murase
  • Patent number: 6673434
    Abstract: A crosslinkable thermal interface material is produced by combining at least one rubber compound, at least one amine resin and at least one thermally conductive filler. This interface material takes on the form of a liquid or “soft gel”. The gel state is brought about through a crosslinking reaction between the at least one rubber compound composition and the at least one amine resin composition. Once the foundation composition that comprises at least one rubber compound, at least one amine resin, and at least one thermally conductive filler has been prepared, the composition must be compared to the needs of the electronic component, vendor, or electronic product to determine if a phase change material is needed to change some of the physical properties of the composition.
    Type: Grant
    Filed: January 14, 2002
    Date of Patent: January 6, 2004
    Assignee: Honeywell International, Inc.
    Inventor: My Nguyen
  • Patent number: 6663794
    Abstract: This invention provides a reducing-atmosphere-resistant thermistor element, the resistance of which does not greatly change even when the element is exposed to a reducing atmosphere, and which has high accuracy and exhibits excellent resistance value stability. The thermistor element has a construction in which an oxygen occlusion-release composition, having oxygen occlusion-release characteristics, such as CeO2 is dispersed in a composition containing a mixed sintered body (M1 M2)O3.AOx as a principal component. The oxygen occlusion-release composition emits absorbed oxygen in a reducing atmosphere and suppresses migration of oxygen from the composition constituting the element. Therefore, the resistance value does not greatly change even when the element is exposed to a reducing atmosphere, and the element can accurately detect the temperature for a long time. The present invention can thus provide a temperature sensor having high reliability.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: December 16, 2003
    Assignees: Nippon Soken, Inc., Denso Corporation
    Inventors: Itsuhei Ogata, Daisuke Makino, Kaoru Kuzuoka, Atsushi Kurano
  • Patent number: 6638630
    Abstract: Coating solutions having anti-reflective and anti-static properties, a coating derived therefrom, a substrate coated with the coating and methods for their preparation. A coating includes a sol-gel alkoxide polymeric material and a conductive colloidal metal compound material.
    Type: Grant
    Filed: November 21, 2001
    Date of Patent: October 28, 2003
    Assignee: Chemat Technology, Inc.
    Inventors: Sung-Soon Park, Haixing Zheng
  • Patent number: 6635193
    Abstract: In a dielectric composition for use in formation of a dielectric layer in a plasma display panel, comprising glass powder, the glass powder is powder of glass which contains PbO of 50% or less and CuO as one of essential elements contained in the glass for preventing color change of the dielectric layer from being caused due to reaction with Ag electrodes in the plasma display panel. Ceramics powder can be mixed with the glass powder. The dielectric composition can also be provided in a form of paste, alternatively in a form of a green sheet.
    Type: Grant
    Filed: August 11, 2000
    Date of Patent: October 21, 2003
    Assignee: Nippon Electric Glass Co., Ltd.
    Inventors: Norikazu Fukushima, Hiroyuki Oshita, Takayuki Mito, Masahiko Ouji, Kazuo Hadano
  • Patent number: 6627120
    Abstract: In order to achieve miniaturization and an increase in the capacitance of a monolithic ceramic capacitor, a conductive paste suitable for forming an internal conductor film is provided, the layer thickness of the internal conductor film being decreased with a decrease in the layer thickness of a dielectric ceramic layer. The conductive paste contains a conductive powder, such as a nickel powder, an organic vehicle, an organic acid barium salt and an organic zirconium compound. Each of the organic acid barium salt in terms of barium atom and the organic zirconium compound in terms of zirconium atom is about 0.05 to 1.00 mol per mol of the conductive powder, and the content of the organic zirconium compound in terms of zirconium atom is about 0.98 to 1.02 mol per mol of the organic acid barium salt in terms of barium atom.
    Type: Grant
    Filed: January 30, 2003
    Date of Patent: September 30, 2003
    Assignee: Murata Manufacturing Co. Ltd.
    Inventor: Motohiro Shimizu
  • Patent number: 6572793
    Abstract: A method of producing an electronic device including a dielectric layer includes a dielectric ceramic composition containing a main component expressed by a formula of {(Sr1−xCax)O}m.(Ti1−yZry)O2, wherein x fulfills 0≦x≦1.00 and y fulfills 0≦y≦0.20, and producing said dielectric ceramic composition by using a material expressed by a formula of {(Sr1−xCax)O}m′.(Ti1−yZry)O2 wherein the mole ratio m′ fulfills m′<m. It is possible to produce an electronic device, such as a chip capacitor, having excellent resistance to reducing during firing and excellent capacity-temperature characteristics after firing, wherein the insulation resistance is hard to be deteriorated particularly when made to be a thin layer and defect rate of the initial insulation resistance is low.
    Type: Grant
    Filed: March 19, 2001
    Date of Patent: June 3, 2003
    Assignee: TDK Corporation
    Inventors: Takashi Fukui, Yasuo Watanabe, Mikio Takahashi, Akira Sato