With Nonmetal Compound Containing Halogen, Nitrogen, Phosphorus, Or Sulfur Patents (Class 252/521.6)
  • Publication number: 20150137115
    Abstract: The present disclosure provides a solution for a metal oxide semiconductor thin film, including metal hydroxides dissolved in an aqueous or nonaqueous solvent and an acid/base titrant for controlling solubility of metal hydroxides. A solution is synthesized to improve stability and semiconductive performance of a device through addition of other metal hydroxides. The solution is applied on a substrate and annealed by using various annealing apparatuses to obtain a high-quality metal oxide thin film at low temperatures. The thin film is optically transparent, and thus can be applied to thin films for various electronic devices, solar cells, various sensors, memory devices, and the like.
    Type: Application
    Filed: March 4, 2011
    Publication date: May 21, 2015
    Applicant: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Jooho Moon, Youngmin Jeong, Tae Hwan Jun, Keun Kyu Song, Areum Kim, Yangho Jung
  • Patent number: 9029018
    Abstract: A method for making a lithium battery cathode material is disclosed. A mixed solution including a solvent, an iron salt material, a vanadium source material and a phosphate material is provided. An alkaline solution is added in the mixed solution to make the mixed solution have a pH value ranging from about 1.5 to 5. The iron salt, the vanadium source material and the phosphate material react with each other to form a plurality particles of iron phosphate precursor doped with vanadium which are added in a mixture of a lithium source solution and a reducing agent to form a slurry of lithium iron phosphate precursor doped with vanadium. The slurry of lithium iron phosphate precursor doped with vanadium is heat-treated.
    Type: Grant
    Filed: December 27, 2010
    Date of Patent: May 12, 2015
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Gai Yang, Chang-Yin Jiang, Jian Gao, Jie-Rong Ying, Jian-Jun Li, Xiang-Ming He
  • Patent number: 8999060
    Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: April 7, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr.
  • Patent number: 8986819
    Abstract: A non-catalytic palladium precursor composition is disclosed, including a palladium salt and an organoamine, wherein the composition is substantially free of water. The composition permits the use of solution processing methods to form a palladium layer on a wide variety of substrates, including in a pattern to form circuitry or pathways for electronic devices.
    Type: Grant
    Filed: October 16, 2013
    Date of Patent: March 24, 2015
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Ping Liu
  • Publication number: 20150069307
    Abstract: Compositions and methods of making are provided for treated mesoporous metal oxide microspheres electrodes. The compositions include microspheres with an average diameter between about 200 nanometers and about 10 micrometers and mesopores on the surface and interior of the microspheres. The methods of making include forming a mesoporous metal oxide microsphere composition and treating the mesoporous metal oxide microspheres by at least annealing in a reducing atmosphere, doping with an aliovalent element, and coating with a coating composition.
    Type: Application
    Filed: November 12, 2014
    Publication date: March 12, 2015
    Applicant: UT-BATTELLE, LLC
    Inventors: Mariappan Parans Paranthaman, Zhonghe Bi, Craig A. Bridges, Gilbert M. Brown
  • Patent number: 8951448
    Abstract: A cathode material for a lithium secondary battery capable of stably suppressing manganese dissolution even under high temperature and voltage conditions is provided. Further, by using the cathode material for a lithium secondary battery, a lithium secondary battery excellent in a charge/discharge cycle profile at a high temperature and a secondary battery module equipped with the battery are provided. The cathode material for a lithium secondary battery comprises a lithium manganese composite oxide and a coating layer formed on the surface of the lithium manganese composite oxide. The coating layer includes an oxide compound or a fluoride compound each containing M (wherein, M is at least one element selected from the group of Mg, Al and Cu), and a phosphorous compound. An atomic density of M at the side of the lithium manganese composite oxide in the coating layer is higher than an atomic density of M at the side of a surface layer of the coating layer facing to the electrolyte.
    Type: Grant
    Filed: February 24, 2011
    Date of Patent: February 10, 2015
    Assignee: Hitachi, Ltd.
    Inventors: Tatsuya Toyama, Kazushige Kohno
  • Patent number: 8920688
    Abstract: A method of synthesizing transition metal phosphide. In one embodiment, the method has the steps of preparing a transition metal lignosulfonate, mixing the transition metal lignosulfonate with phosphoric acid to form a mixture, and subjecting the mixture to a microwave radiation for a duration of time effective to obtain a transition metal phosphide.
    Type: Grant
    Filed: April 5, 2010
    Date of Patent: December 30, 2014
    Assignee: Board of Trustees of the University of Arkansas
    Inventor: Tito Viswanathan
  • Patent number: 8858843
    Abstract: A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: October 14, 2014
    Assignee: Innovalight, Inc.
    Inventors: Elena Rogojina, Maxim Kelman, Giuseppe Scardera
  • Publication number: 20140302579
    Abstract: The present invention concerns a device comprising (i) a composite material comprising (1) a plurality of conductive or semiconductive nanotubes, and (2) a matrix arranged between these nanotubes and (ii) means allowing said composite material to be subjected to an electric field. The present invention also concerns the uses of said device in particular to defoul or to modify a composite material and to electroporate at least one cell.
    Type: Application
    Filed: October 8, 2012
    Publication date: October 9, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX
    Inventors: Pascal Boulanger, Alexandre Brouzes
  • Publication number: 20140264186
    Abstract: The present invention provides for a natural, non-toxic, environmentally friendly, “green” mineral based composition that produces ions and emits far infrared heat and the composition comprises tourmaline microcrystals and at least one activating element.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Inventors: Douglas Spatz, Dan DeLaRosa
  • Patent number: 8742414
    Abstract: Provided are a composition for an oxide thin film, a preparation method of the composition, a method for forming an oxide thin film using the composition, an electronic device including the oxide thin film, and a semiconductor device including the oxide thin film. The composition for the oxide thin film includes a metal precursor and nitric acid-based stabilizer. The metal precursor includes at least one of a metal nitrate, a metal nitride, and hydrates thereof.
    Type: Grant
    Filed: October 16, 2012
    Date of Patent: June 3, 2014
    Assignee: Industry-Academic Cooperation Foundation, Yonsei University
    Inventors: Hyun Jae Kim, Woong Hee Jeong, You Seung Rim
  • Patent number: 8728236
    Abstract: Large area single crystal III-V nitride material having an area of at least 2 cm2, having a uniformly low dislocation density not exceeding 3×106 dislocations per cm2 of growth surface area, and including a plurality of distinct regions having elevated impurity concentration, wherein each distinct region has at least one dimension greater than 50 microns, is disclosed. Such material can be formed on a substrate by a process including (i) a first phase of growing the III-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 102 pits/cm2 of the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.
    Type: Grant
    Filed: January 17, 2011
    Date of Patent: May 20, 2014
    Assignee: Cree, Inc.
    Inventors: Xueping Xu, Robert P. Vaudo
  • Patent number: 8715532
    Abstract: Disclosed herein is a reduced graphene oxide doped with a dopant, and a thin layer, a transparent electrode, a display device and a solar cell including the reduced graphene oxide. The reduced graphene oxide doped with a dopant includes an organic dopant and/or an inorganic dopant.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: May 6, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeon-jin Shin, Jae-young Choi, Seon-mi Yoon
  • Patent number: 8679248
    Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: March 25, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr.
  • Patent number: 8679375
    Abstract: A practical and environmentally-friendly method, i.e. the high temperature-mechanical mixing by using an internal mixing device and a two-roll open milling device is used to produce the carbon blacks-free electrically conductive sulfur-vulcanised rubber blends of solid poly(butadiene-co-acrylonitrile) and solid sulfonic acid doped polyaniline. The addition of sulfur vulcanization system does not affect the electrical properties of the vulcanised blends. All vulcanised blends prepared by using this method show useful electrical conductivities up to the order of 10?2 S/cm, good tensile strengths up to 18.0 MPa and colorable with the addition of a whitening agent. As a result, they have good potential to be used for manufacturing any antistatic products, electrostatic discharge or dissipative products and electromagnetic or radio frequency interferences shielding products.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: March 25, 2014
    Assignee: Malaysian Rubber Board
    Inventors: Kok Chong Yong, Che Su Mt Saad
  • Patent number: 8663389
    Abstract: A method and apparatus for depositing III-V material is provided. The apparatus includes a reactor partially enclosed by a selectively permeable membrane 12. A means is provided for generating source vapors, such as a vapor-phase halide of a group III element (IUPAC group 13) within the reactor volume 10, and an additional means is also provided for introducing a vapor-phase hydride of a group V element (IUPAC group 15) into the volume 10. The reaction of the group III halide and the group V hydride on a temperature-controlled substrate 18 within the reactor volume 10 produces crystalline III-V material and hydrogen gas. The hydrogen is preferentially removed from the reactor through the selectively permeable membrane 12, thus avoiding pressure buildup and reaction imbalance. Other gases within the reactor are unable to pass through the selectively permeable membrane.
    Type: Grant
    Filed: May 21, 2011
    Date of Patent: March 4, 2014
    Inventor: Andrew Peter Clarke
  • Patent number: 8641823
    Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.
    Type: Grant
    Filed: November 4, 2009
    Date of Patent: February 4, 2014
    Assignee: The Regents of the University of California
    Inventors: Siddha Pimputkar, Derrick S. Kamber, James S. Speck, Shuji Nakamura
  • Patent number: 8613802
    Abstract: Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125).
    Type: Grant
    Filed: January 20, 2010
    Date of Patent: December 24, 2013
    Assignee: Sumitomo Electric Industies, Ltd.
    Inventors: Issei Satoh, Michimasa Miyanaga, Yoshiyuki Yamamoto, Hideaki Nakahata
  • Patent number: 8591652
    Abstract: The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide and wherein the semiconductor substrate self-separates from the starting substrate without further process steps.
    Type: Grant
    Filed: August 24, 2006
    Date of Patent: November 26, 2013
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Christian Hennig, Markus Weyers, Eberhard Richter, Guenther Traenkle
  • Patent number: 8580159
    Abstract: An ink for inkjet recording containing water, water-soluble organic solvent, water-dispersible resin, fluorochemical surfactant or derivative thereof, and coloring agent containing pigment, where the ink has a surface tension of 20-35 mN/m and viscosity of ?5 mPa·s at 25° C., total amount of the water-dispersible resin and the coloring agent in the ink is 5-40% by mass, and mass ratio A/B of the water-dispersible resin A to the coloring agent B is 0.5-4, where the ink is applied to a recording medium containing a support containing cellulose pulp, and one or more barrier layers disposed on a face of the support, and where the barrier layer contains ?30% by mass of inorganic pigment having refractive index of ?1.5, excluding aluminum hydrate, and ?10% by mass of inorganic pigment having a refractive index of <1.5.
    Type: Grant
    Filed: July 10, 2012
    Date of Patent: November 12, 2013
    Assignee: Ricoh Company, Ltd.
    Inventors: Michihiko Namba, Akihiko Matsuyama, Naoya Morohoshi, Tohru Ohshima, Masayuki Koyano, Akihiko Gotoh, Kiyofumi Nagai
  • Patent number: 8518298
    Abstract: There is provided a mixture having a freezing point of up to 50° C., formed by reaction between: (A) one molar equivalent of a salt of formula I (Mn+)(X?)n I or a hydrate thereof; and (B) from one to eight molar equivalents of a complexing agent comprising one or more uncharged organic compounds, each of which compounds has (i) a hydrogen atom that is capable of forming a hydrogen bond with the anion X?; and (ii) a heteroatom selected from the group consisting of O, S, N and P that is capable of forming a coordinative bond with the metal ion Mn+, which reaction is performed in the absence of extraneous solvent, wherein M, X? mind a have meaning given in the description.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: August 27, 2013
    Assignee: University of Leicester
    Inventor: Andrew Peter Abbott
  • Publication number: 20130177806
    Abstract: An electrode for an electrochemical cell including an active electrode material and an intrinsically conductive coating wherein the coating is applied to the active electrode material by heating the mixture for a time and at a temperature that limits degradation of the cathode active material.
    Type: Application
    Filed: March 15, 2013
    Publication date: July 11, 2013
    Applicant: WILDCAT DISCOVERY TECHNOLOGIES, INC.
    Inventor: Wildcat Discovery Technologies, Inc.
  • Patent number: 8470210
    Abstract: A practical and environmentally-friendly method, i.e. the high temperature-mechanical mixing by using an internal mixing device and a two-roll open milling device is used to produce the carbon blacks-free electrically conductive sulfur-vulcanised rubber blends of solid poly(butadiene-co-acrylonitrile) and solid sulfonic acid doped polyaniline. The addition of sulfur vulcanisation system does not affect the electrical properties of the vulcanised blends. All vulcanised blends prepared by using this method show useful electrical conductivities up to the order of 10?2 S/cm, good tensile strengths up to 18.0 MPa and colourable with the addition of a whitening agent. As a result, they have good potential to be used for manufacturing any antistatic products, electrostatic discharge or dissipative products and electromagnetic or radio frequency interferences shielding products.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: June 25, 2013
    Assignee: Malaysian Rubber Board
    Inventors: Kok Chong Yong, Che Su Mt Saad
  • Patent number: 8455139
    Abstract: A method for making a lithium battery cathode composite is provided. First, a plurality of lithium vanadium phosphate particles is provided. A lithium iron phosphate layer is then formed on an outer surface of each of the lithium vanadium phosphate particle by coating a lithium iron phosphate precursor slurry, thereby forming the lithium battery cathode composite.
    Type: Grant
    Filed: December 16, 2010
    Date of Patent: June 4, 2013
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Gai Yang, Chang-Yin Jiang, Jian Gao, Jie-Rong Ying, Jian-Jun Li, Xiang-Ming He
  • Patent number: 8449672
    Abstract: This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (Li3N) combined with barium fluoride (BaF2), or lithium nitride combined with barium fluoride and lithium fluoride (LiF) composition, heating the solvent to render it molten, dissolution of the source of GaN material in the molten solvent and following precipitation of GaN single crystals either self seeded or on the seed, maintaining conditions and then precipitating out.
    Type: Grant
    Filed: April 25, 2008
    Date of Patent: May 28, 2013
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Richard L. Henry
  • Patent number: 8425822
    Abstract: A composition of matter suitable for spinning polyaniline fiber, a method for spinning electrically conductive polyaniline fiber, a method for exchanging dopants in polyaniline fibers, and methods for dedoping and redoping polyaniline fibers are described.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: April 23, 2013
    Assignee: Santa Fe Science and Technology, Inc.
    Inventors: Benjamin R. Mattes, Phillip N. Adams, Dali Yang, Lori A. Brown, Andrei G. Fadeev, Ian D. Norris
  • Patent number: 8425808
    Abstract: The present application discloses, in various embodiments, semiconducting layer compositions comprising a non-amorphous semiconductor material and a molecular glass. Electronic devices, such as thin-film transistors, are also disclosed. The semiconducting layer compositions exhibit good film-forming properties and high mobility.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: April 23, 2013
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Ping Liu, Anthony James Wigglesworth, Nan-Xing Hu
  • Patent number: 8409476
    Abstract: There is provided a transparent conductor including conductive nanoparticles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer. The nanoparticles are carbon nanoparticles, metal nanoparticles, or combinations thereof. The carbon and metal nanoparticles are selected from nanotubes, fullerenes, and nanofibers. The acid polymers are fluorinated or highly fluorinated and have acidic groups including carboxylic acid groups, sulfonic acid groups, sulfonimide groups, phosphoric acid groups, phosphonic acid groups, and combinations thereof. The semiconductive polymers comprise homopolymers and copolymers derived from monomers selected from substituted and unsubstituted thiophenes, pyrroles, anilines, and cyclic heteroaromatics, and combinations of those. The compositions may be used in organic electronic devices (OLEDs).
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: April 2, 2013
    Assignee: E I du Pont de Nemours and Company
    Inventors: Che-Hsiung Hsu, Hjalti Skulason
  • Patent number: 8252207
    Abstract: To provide an ink for inkjet recording containing water, water-soluble organic solvent, water-dispersible resin, fluorochemical surfactant or derivative thereof, and coloring agent containing pigment, wherein the ink has a surface tension of 20-35 mN/m and viscosity of 5 mPa·s or more at 25° C., total amount of the water-dispersible resin and the coloring agent in the ink is 5-40% by mass, and mass ratio A/B of the water-dispersible resin A to the coloring agent B is 0.5-4, wherein the ink is applied for a recording medium for inkjet recording containing a support containing cellulose pulp, and one or more barrier layers disposed on at least one face of the support, and wherein the barrier layer contains 30% by mass or more of inorganic pigment having refractive index of 1.5 or more, excluding aluminum hydrate, and 10% by mass or less of an inorganic pigment having a refractive index of less than 1.5.
    Type: Grant
    Filed: August 30, 2007
    Date of Patent: August 28, 2012
    Assignee: Ricoh Company, Ltd.
    Inventors: Michihiko Namba, Akihiko Matsuyama, Naoya Morohoshi, Tohru Ohshima, Masayuki Koyano, Akihiko Gotoh, Kiyofumi Nagai
  • Patent number: 8187507
    Abstract: A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.
    Type: Grant
    Filed: November 14, 2007
    Date of Patent: May 29, 2012
    Assignee: Osaka University
    Inventors: Yusuke Mori, Takatomo Sasaki, Fumio Kawamura, Masashi Yoshimura, Minoru Kawahara, Yasuo Kitaoka, Masanori Morishita
  • Patent number: 8173050
    Abstract: A conductive pattern formation ink which can be stably ejected in the form of liquid droplets and form a conductive pattern having high reliability, a conductive pattern having high reliability, and a wiring substrate provided with the conductive pattern and having high reliability are provided. The conductive pattern formation ink is used for forming a conductive pattern by ejecting the ink in the form of liquid droplets on a surface of a ceramic molded body using a liquid droplet ejecting method, the ceramic molded body being made of a material containing ceramic particles and a binder. The ink contains a water-based dispersion medium, and metal particles dispersed in the water-based dispersion medium, wherein the water-based dispersion medium contains oxygen molecules and nitrogen molecules, and wherein when the water-based dispersion medium is analyzed using a gas chromatography method, a total amount of the oxygen and nitrogen molecules contained in the water-based dispersion medium is 12 ppm or less.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: May 8, 2012
    Assignee: Seiko Epson Corporation
    Inventors: Naoyuki Toyoda, Toshiyuki Kobayashi, Sachiko Endo, Noboru Uehara, Akihiko Tsunoya
  • Publication number: 20120077082
    Abstract: Electrodes for lithium batteries are coated via an atomic layer deposition process. The coatings can be applied to the assembled electrodes, or in some cases to particles of electrode material prior to assembling the particles into an electrode. The coatings can be as thin as 2 ?ngstroms thick. The coating provides for a stable electrode. Batteries containing the electrodes tend to exhibit high cycling capacities.
    Type: Application
    Filed: June 13, 2011
    Publication date: March 29, 2012
    Inventors: Lee Se-Hee, Steven M. George, Andrew S. Cavanagh, Jung Yoon Seok, Anne C. Dillon
  • Patent number: 8114542
    Abstract: The invention relates to a method for producing an anode for a lithium-ion battery, said anode comprising a current collector formed from a transition metal M in the form of a foam and an active material comprising a binary phosphide of said metal M, said active material corresponding to the formula MPx in which 1?x?4. The method consists in subjecting the metal M foam to the action of phosphorus vapor at a temperature between 300° C. and 600° C., the phosphorus being present in a proportion which differs by at most 10% from the stoichiometric proportion relative to the metal M. The invention also relates to an anode for a lithium-ion battery, and to a lithium-ion battery comprising such an anode.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: February 14, 2012
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Frederic Gillot, Jean-Marie Tarascon, Laure Monconduit
  • Patent number: 8105505
    Abstract: An electrically conductive composite consisting of Vinyl-ester (as an anti-corrosive matrix), woven carbon fibers (as the reinforcement and conductive material) and carbon black powder (as a conductive filler) is manufactured. Various weight percentages of the matrix, fibers and filler are examined. The product cured at room temperature. Low weight, high strength, high stiffness, chemically corrosive resistance, electrically conductive characteristics are obtained from the product. The product may serve as electrically conductive polymeric composites in chemically corrosive environment.
    Type: Grant
    Filed: July 7, 2009
    Date of Patent: January 31, 2012
    Assignee: Nokhbegan Institute of Technology (NITD)
    Inventors: Mahmood Mehrdad Shokrieh, Saber Mirzaee, Ali Naghashpour
  • Publication number: 20110227007
    Abstract: A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot.
    Type: Application
    Filed: October 19, 2010
    Publication date: September 22, 2011
    Applicants: SAMSUNG ELECTRONICS CO., LTD., SNU R&DB FOUNDATION
    Inventors: Jong Hyuk KANG, Junghan SHIN, Jae Byung PARK, Dong-Hoon LEE, Minki NAM, Kookheon CHAR, Seonghoon LEE, WanKi BAE, Jaehoon LIM, Joohyun JUNG
  • Patent number: 7988886
    Abstract: A conductive pattern forming ink for forming a conductive pattern on a substrate by a droplet discharge method includes: metal particles; an aqueous dispersion medium in which the metal particles are dispersed; inositol; and a polyglycerol compound having a polyglycerol skeleton. In the ink, H shown in the following formula (I) is 0.050 to 0.
    Type: Grant
    Filed: December 2, 2008
    Date of Patent: August 2, 2011
    Assignee: Seiko Epson Corporation
    Inventor: Naoyuki Toyoda
  • Patent number: 7988888
    Abstract: A conductive pattern forming ink for forming a conductive pattern on a substrate by a droplet discharge method includes: metal particles; an aqueous dispersion medium in which the metal particles are dispersed; galactitol; and a polyglycerol compound having a polyglycerol skeleton. In the ink, H shown in the following formula (I) is 0.10 to 0.
    Type: Grant
    Filed: December 2, 2008
    Date of Patent: August 2, 2011
    Assignee: Seiko Epson Corporation
    Inventor: Naoyuki Toyoda
  • Patent number: 7988885
    Abstract: The present invention is directed to electrochromic electrolyte polymer blends. These blends comprise an amorphous polymer and an electrochromophore component. The electrochromophore component comprises a polyalkylene polymer copolymerized with an electrochromic moiety. The blends can be used to make elastomeric films and coatings that can be used in laminates, which can be used to form manufactured articles such as architectural and vehicular glazing, eyewear, displays and signage.
    Type: Grant
    Filed: June 23, 2006
    Date of Patent: August 2, 2011
    Assignee: E. I. du Pont de Nemours and Company
    Inventors: Simona Percec, Susan H. Tilford
  • Patent number: 7955527
    Abstract: The invention provides a conductivity control agent comprised of a polymeric material containing diphosphonium bis(sulfoarylcarbonyloxy) glycol salts as conductivity control agent. The conductivity control agents can be used with semi-conductive rolls, belts and other biasable members. The inclusion of the conductivity control agent in the polymeric or polyurethane elastomers extends the electrical life of the polymeric biasable member in low humidity environments. Additionally, the resistivity of the elastomeric polymer on the biasable member is controlled to a desirable value by adjusting the conductivity control agent level in the elastomers.
    Type: Grant
    Filed: March 20, 2009
    Date of Patent: June 7, 2011
    Assignee: Eastman Kodak Company
    Inventors: M. Cristina B. DeJesus, Charles E. Hewitt, John C. Wilson
  • Patent number: 7947975
    Abstract: A dopant composition for organic semiconductors is an electron acceptor characterized by an evaporation point above 150° C. or a glass phase. The dopant composition includes a compound represented by structural formula (1): wherein R1 to R5 are independently hydrogen, chlorine, fluorine, nitro, or cyano; or a phenyl or annulated aromatic group optionally substituted with chlorine or fluorine. Also included are doped organic semiconductors and organic electronic components comprising the dopant composition, and methods of preparing the doped organic semiconductor.
    Type: Grant
    Filed: August 28, 2006
    Date of Patent: May 24, 2011
    Assignee: Osram Opto Semiconductors GmbH
    Inventor: Andreas Kanitz
  • Patent number: 7914707
    Abstract: Disclosed is a compound represented by the following formula 1: wherein, each of R1˜R13 independently represents —H, —F, —Cl, —Br, —I, —OH, —SH, —COOH, —PO3H2, —NH2, —NO2, —O(CH2CH2O)nH (wherein, n is an integer of 1˜5), C1˜C12 alkyl group, C1˜C12 aminoalkyl group, C1˜C12 hydroxyalkyl group, C1˜C12 haloalkyl group, C2˜C12 alkenyl group, C1˜C12 alkoxy group, C1˜C12 alkylamino group, C1˜C12 dialkylamino group, C6˜C18 aryl group, C6˜C18 aminoaryl group, C6˜C18 hydroxyaryl group, C6˜C18 haloaryl group, C7˜C18 benzyl group, C7˜C18 aminobenzyl group, C7˜C18 hydroxybenzyl group, C7˜C18 halobenzyl group, or nitrile group (—CN); and at least one of R4˜R13 is nitrile group (—CN). A non-aqueous electrolyte comprising: (i) a lithium salt, (ii) a solvent, and (iii) a compound represented by formula 1; and a secondary battery comprising the non-aqueous electrolyte are also disclosed.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: March 29, 2011
    Assignee: LG Chem, Ltd.
    Inventors: Yu Sin Kim, Hyeong Jin Kim, Hye Yun Cha, Ho Chun Lee
  • Publication number: 20110065001
    Abstract: The present invention provides electrochemical energy storage systems comprising metallolyte composites, iron fluoride composites and iron oxyfluoride composites. The present invention further provides methods for fabricating metallolyte composites.
    Type: Application
    Filed: May 21, 2009
    Publication date: March 17, 2011
    Inventors: Nathalie Pereira, Glenn Amatucci
  • Patent number: 7857999
    Abstract: The invention relates to a self-doping type electrically conducting polymer comprising an isothianaphthene or thiophene skeleton where the polymer chains are crosslinked preferably through a sulfone bond which is imparted with water resistance and solvent resistance; a production process thereof; an electrically conducting composition film obtained by coating a composition containing the self-doping type electrically conducting polymer on a substrate and heating it; a product coated using the composition; and an electronic device containing the self-doping type electrically conducting polymer.
    Type: Grant
    Filed: October 9, 2009
    Date of Patent: December 28, 2010
    Assignee: Showa Denko K.K.
    Inventors: Yoshihiro Saida, Takashi Ohkubo
  • Patent number: 7749407
    Abstract: There is provided a transparent conductor including conductive nanoparticles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer. The nanoparticles are carbon nanoparticles, metal nanoparticles, or combinations thereof. The carbon and metal nanoparticles are selected from nanotubes, fullerenes, and nanofibers. The acid polymers are fluorinated or highly fluorinated and have acidic groups including carboxylic acid groups, sulfonic acid groups, sulfonimide groups, phosphoric acid groups, phosphonic acid groups, and combinations thereof. The semiconductive polymers comprise homopolymers and copolymers derived from monomers selected from substituted and unsubstituted thiophenes, pyrroles, anilines, and cyclic heteroaromatics, and combinations of those. The compositions may be used in organic electronic devices (OLEDs).
    Type: Grant
    Filed: June 28, 2006
    Date of Patent: July 6, 2010
    Assignee: E.I. du Pont de Nemours and Company
    Inventors: Che-Hsiung Hsu, Hjalti Skulason
  • Patent number: 7736547
    Abstract: A method of producing a proton conducting material, comprising adding a pyrophosphate salt to a solvent to produce a dissolved pyrophosphate salt; adding an inorganic acid salt to a solvent to produce a dissolved inorganic acid salt; adding the dissolved inorganic acid salt to the dissolved pyrophosphate salt to produce a mixture; substantially evaporating the solvent from the mixture to produce a precipitate; and calcining the precipitate at a temperature of from about 400° C. to about 1200° C.
    Type: Grant
    Filed: March 11, 2008
    Date of Patent: June 15, 2010
    Assignee: Los Alamos National Security, LLC
    Inventors: Fernando Henry Garzon, Melinda Lou Einsla, Rangachary Mukundan
  • Patent number: 7704914
    Abstract: A photocatalyst which has high catalytic activity, is nontoxic, has a long life, can utilize visible light as it is for photocatalytic reactions, and is useful especially for hydrogen generation; and a process for producing the same. The photocatalyst comprises cadmium sulfide, has a capsule structure, wherein platinum is supported thereto. It can be obtainable by bubbling H2S gas into a liquid to which particles of cadmium oxide have been added.
    Type: Grant
    Filed: August 23, 2002
    Date of Patent: April 27, 2010
    Assignees: Nittetsu Mining Co., Ltd., Japan Sience and Technology Agency
    Inventors: Kazuyuki Tohji, Akira Kishimoto, Takafumi Atarashi
  • Patent number: 7666330
    Abstract: Disclosed is a compound represented by the following formula 1: wherein, each of R1˜R13 independently represents —H, —F, —Cl, —Br, —I, —OH, —SH, —COOH, —PO3H2, —NH2, —NO2, —O(CH2CH2O)nH (wherein, n is an integer of 1˜5), C1˜C12 alkyl group, C1˜C12 aminoalkyl group, C1˜C12 hydroxyalkyl group, C1˜C12 haloalkyl group, C2˜C12 alkenyl group, C1˜C12 alkoxy group, C1˜C12 alkylamino group, C1˜C12 dialkylamino group, C6˜C18 aryl group, C6˜C18 aminoaryl group, C6˜C18 hydroxyaryl group, C6˜C18 haloaryl group, C7˜C18 benzyl group, C7˜C18 aminobenzyl group, C7˜C18 hydroxybenzyl group, C7˜C18 halobenzyl group, or nitrile group (—CN); and at least one of R4˜R13 is nitrile group (—CN). A non-aqueous electrolyte comprising: (i) a lithium salt, (ii) a solvent, and (iii) a compound represented by formula 1; and a secondary battery comprising the non-aqueous electrolyte are also disclosed.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: February 23, 2010
    Assignee: LG Chem, Ltd.
    Inventors: Yu Sin Kim, Hyeong Jin Kim, Hye Yun Cha, Ho Chun Lee
  • Publication number: 20100019228
    Abstract: A resistivity stable aqueous dispersion and a method for making an aqueous dispersion. The dispersion including polythienothiophene and at least one colloid-forming polymeric acid having a pH of from about 3 to about 10. The method includes preparing an aqueous dispersion containing polythienothiophene and adjusting the pH of the dispersion to a sufficiently high pH to provide resistivity stability. Devices utilizing layers formed of pH adjusted polythienothiophene are also disclosed.
    Type: Application
    Filed: June 8, 2007
    Publication date: January 28, 2010
    Applicant: AIR PRODUCTS AND CHEMICALS, INC.
    Inventors: Xuezhong Jiang, Andrew Francis Nordquist
  • Patent number: 7638071
    Abstract: The invention relates to a self-doping type electrically conducting polymer comprising an isothianaphthene or thiophene skeleton where the polymer chains are crosslinked preferably through a sulfone bond which is imparted with water resistance and solvent resistance; a production process thereof; an electrically conducting composition film obtained by coating a composition containing the self-doping type electrically conducting polymer on a substrate and heating it; a product coated using the composition; and an electronic device containing the self-doping type electrically conducting polymer.
    Type: Grant
    Filed: March 23, 2005
    Date of Patent: December 29, 2009
    Assignee: Showa Denko K.K.
    Inventors: Yoshihiro Saida, Takashi Ohkubo
  • Patent number: 7608557
    Abstract: Provided are a photocatalyst which is high in catalytic activity, is nontoxic, has a long life, allows visible light to be used directly for its photocatalytic reaction and is especially useful for hydrogen generation, and a process for producing it. It contains a cadmium compound, has a capsular structure, has an average particle diameter of 100 nm or less and can be manufactured by dropping a solution of a cadmium salt into a solution of a sodium compound or admixing a solution of a sodium compound in a suspension of particles of a cadmium compound.
    Type: Grant
    Filed: June 5, 2003
    Date of Patent: October 27, 2009
    Assignee: Nittetsu Mining Co., Ltd.
    Inventors: Kazuyuki Tohji, Akira Kishimoto, Takafumi Atarashi