Abstract: A dielectric material for use in electrical energy storage devices includes at least two nanostructures which are each embedded in an electrically insulating matrix made of a material having a bandgap greater than a material of the nanostructures. A probability different from zero of charge carrier tunnelling in parallel to a direction of an electrical field that can be used from outside is set between the two nanostructures.

Abstract: A method for manufacturing an electrode of a supercapacitor is provided. First, a poly(acrylonitrile) (PAN) fabric is provided. The PAN fabric includes a plurality of PAN fibers each having a diameter of about 50-500 nm. Then, the PAN fabric undergoes a heat treatment so that the PAN fibers are carbonized to form a carbon fiber textile. The carbon fiber fabric includes a plurality of carbon fibers each having a diameter of about 50-500 nm. The surface of each carbon fiber is nano-porous having a plurality of nano pores of about 1-50 nm in diameter. The total surface area of the nano pores account for about 85-95% of the total surface area of the carbon fibers. The carbon fiber fabric is then cut to acquire the electrode of the supercapacitor.

Abstract: Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.

Abstract: Nanostructured materials and photovoltaic devices including nanostructured materials are described. In one embodiment, a nanostructured material includes: (a) a first nano-network formed from a first set of nanoparticles; and (b) a second nano-network coupled to the first nano-network and formed from a second set of nanoparticles. At least one of the first set of nanoparticles and the second set of nanoparticles are formed from an indirect bandgap material. The nanostructured material is configured to absorb light to produce a first type of charge carrier that is transported in the first nano-network and a second type of charge carrier that is transported in the second nano-network. The nanostructured material has an absorption coefficient that is at least 103 cm?1 within a range of wavelengths from about 400 nm to about 700 nm.

Abstract: Carbonaceous semiconductor material is prepared by heating an organic polymer to carbonize the polymer and incorporating into the carbonized polymer one or more hetero atoms such as those of Group II, III, IV, V and VI of the Periodic Table. Carbonaceous semiconductor material is also prepared by heating an organic polymer containing one or more of the hetero atoms until the hetero atom-containing polymer is carbonized.