Abstract: The present invention relates to the use of certain substituted fullerenes in optoelectronic devices, preferably in photovoltaic cells, preferably in organic photovoltaic cells especially preferred in a two-component electron-selective buffer layer of an organic photovoltaic cell to improve the efficiency of solar cells for energy generation.

Abstract: The present invention relates to the use of printable inks for the formation of Al2O3 coatings or mixed Al2O3 hybrid layers, and to a corresponding process for the formation thereof.

Abstract: Structures having low-k multilayered dielectric diffusion barrier layer having at least one low-k sublayer and at least one air barrier sublayer are described herein. The multilayered dielectric diffusion barrier layer are diffusion barriers to metal and barriers to air permeation. Methods and compositions relating to the generation of the structures are also described. The advantages of utilizing these low-k multilayered dielectric diffusion barrier layer is a gain in chip performance through a reduction in capacitance between conducting metal features and an increase in reliability as the multilayered dielectric diffusion barrier layer are impermeable to air and prevent metal diffusion.

Abstract: Disclosed is an electromagnetic wave EMI/RFI shielding resin composite material that includes a thermoplastic polymer resin, an electrically conductive filler having a polyhedral shape or being capable of forming a polyhedral shape, and a low-melting point metal, and a molded product made using the EMI/RFI shielding resin composite material.

Abstract: Patterned photovoltaic cells, as well as related components and methods, are disclosed.

Abstract: The invention is directed to polyimide based materials having improved electrical and mechanical performance, and also to a process of making such materials. The compositions of the invention comprise: i. a polyimide base polymer in an amount of at least 60 weight percent; ii. a discontinuous phase of inorganic material present in an amount of at least 4 weight percent; iii. a non-ionic halogenated dispersing agent in an amount of at least 0.1 weight percent; and iv. up to 30 weight percent of other optional ingredients, such as, fillers, processing aids, colorants, or the like. The compositions of the invention generally exhibit excellent high frequency performance and can be manufactured by incorporating the dispersing agent and inorganic material into a polyamic acid solution and then converting the polyamic acid solution into a polyimide by conventional or non-conventional means.

Abstract: The present invention provides an electrochemical element electrode material that makes it possible to obtain an electrochemical element having both low internal resistance and high capacity, in particular to obtain an electrochemical element electrode having a uniform active material layer in roll molding at a high rate, and an electrode formed of the electrode material. The electrochemical element electrode material comprises composite particle (a) comprising electrode active material, electric conductive material, and fluororesin (a) having a structure unit obtained by polymerizing tetrafluoroethylene and having a melting point of 200° C. or higher, and amorphous polymer (b) not having a structure unit obtained by polymerizing tetrafluoroethylene and having a glass transition temperature of 180° C. or lower.

Abstract: An organic-inorganic hybrid material comprising a metal oxide and a chelating ligand is synthesized. The function of a coloring property, a light-emitting property, or semiconductivity of the organic-inorganic hybrid material can be controlled by chelating ligand. The organic-inorganic hybrid material is prepared by sol-gel method using sol which includes a metal alkoxide and/or a metal salt and a functional chelating agent.

Abstract: This invention relates to cationically curable sealants that provide low moisture permeability and good adhesive strength after cure. The composition consists essentially of an oxetane compound and a cationic initiator.

Abstract: In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.

Abstract: Disclosed is an organic semiconductor composition containing particles and an organic semiconducting compound combining with the particles.

Abstract: In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.

Abstract: A thermal cutoff member and compositions used to manufacture such members are described herein as including at least two organic compounds which, when sufficiently combined, give rise to a component which has a lower melt transition temperature than the initial organic compounds prior to combining the same. The thermal cutoff member is generally utilized in a thermal cutoff construction having an electrical switching unit that changes its operating condition when the member therein melts by being heated to a certain temperature for the particular material that forms the member being utilized.

Abstract: A method of fabricating a dielectric medium comprising two materials with discrete interfaces between the two materials and media formed from the dielectric medium.