Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric materials comprising a charge compensated lead-based perovskite having the general formula ABO3 is provided, which has reasonably low and fairly temperature insensitive dielectric constants over operating temperatures of −80° C. to 100° C., reasonable loss tangents (<˜10−1), and high tunability. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure.

Abstract: Ferroelectric materials useful in monolithic uncooled infrared imaging use Ca and Sn substitutions in PbTiO3 and also have alternatives with dopants such as Dy, Ho, Bi, Ce, and Fe. The ferroelectrics may also be used in non-volatile integrated circuit memories.

Abstract: Provided is a piezoelectric ceramic capable of improving its piezoelectric properties. The piezoelectric ceramic comprises a rhombohedral perovskite structure compound such as (Na0.5Bi0.5)TiO3, a tetragonal perovskite structure compound such as BaTiO3 and (K0.5Bi0.5)TiO3 and an orthorhombic perovskite structure compound such as NaNbO3, KNbO3 and CaTiO3, or the rhombohedral perovskite structure compound, the tetragonal perovskite structure compound and a cubic perovskite structure compound such as SrTiO3. Three kinds of perovskite structure compounds having different crystal structures are comprised, so that the piezoelectric properties can be improved. The three kinds of compounds may perfectly form a solid solution or not.

Abstract: A piezoelectric ceramic composition is provided, which includes a ceramic composition expressed by a general formula: Sr1-x-yM1xM2yBi2(Nb1-aTaa)2-zTizO9, wherein M1 is at least one element selected from the group consisting of Ca and Ba, M2 is at least one element selected from the group consisting of La, Y, Dy, Er, Yb, Pr, Nd, Sm, Eu and Gd, and x, y, z and a in the general formula respectively are in the range of 0.0≦x<0.9, 0.0<y<0.3, 0.0≦z<0.3, and 0.0≦a≦1.0. This makes it possible to provide a piezoelectric ceramic composition that is free of lead and has a larger electromechanical coupling factor than a conventional bismuth layered compound, and a piezoelectric element using the same.

Abstract: The disclosed invention relates to novel crystalline compositions which may be obtained by doping the alpha (&agr;) form of AlPO4 ceramics, which find use as piezoelectric materials, stable supports for catalysts, biotechnology uses, and the like.

Abstract: The invention includes a ferroelectric physical vapor deposition target having a predominate grain size of less than or equal to 1.0 micron, and a density of at least 95% of maximum theoretical density. A method of making the target includes hot pressing a prereacted ferroelectric powder predominately including individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to 100 nanometers to form a physical vapor deposition target of desired shape. In one implementation, the prereacted ferroelectric powder is hot pressed at a maximum pressing temperature which is at least 200° C. lower than would be required to produce at least 85% of maximum theoretical density in hot pressing the same powder but having a predominate particle size maximum straight linear dimension of at least 1.0 micron at the same pressure and for the same amount of time.

Abstract: The present invention provides an electro-optic ceramic material including lead, zinc and niobium having a propagation loss of less than about 3 dB/cm and a quadratic electro-optic coefficient of greater than about 1×10−6 m2/V2 at 20° C. at a wavelength of 1550 nm. The present invention also provides electro-optic devices including an electro-optic ceramic material including lead, zinc and niobium having a propagation loss of less than about 3 dB/cm and a quadratic electro-optic coefficient of greater than about 1×10−16 m2 V at 20° C. at a wavelength of 1550 nm. The materials and devices of the present invention are useful in optical communications applications such as intensity and phase modulation, switching, and polarization control.

Abstract: A piezoelectric/electrostrictive material is made of a BaTiO3-based porcelain composed mainly of BaTiO3 and containing CuO and Nb2O5. 85% or more of the crystal grains constituting the porcelain are grains having particle diameters of 10 &mgr;m or less and the maximum particle diameters of the grains are in a range of 5 to 25 &mgr;m. This BaTiO3-based piezoelectric/electrostrictive material is superior in piezoelectric/electrostrictive properties to conventional products and can be suitably used in an actuator or a sensor.

Abstract: Grain oriented ceramics constituted of a polycrystalline body having a first perovskite-type alkali-pentavalent metal oxide compound as the main phase, in which a specific crystal plane of each grain constituting the polycrystalline body is oriented. The grain oriented ceramics are obtained by molding a mixture of a first anisotropically-shaped powder A of which developed plane has a lattice matching with a specific crystal plane of the first perovskite-type alkali-pentavalent metal oxide compound and a first reaction material capable of reacting with the first anisotropically-shaped powder A thereby forming at least the first perovskite-type alkali-pentavalent metal oxide compound such that the first anisotropically-shaped powder A is oriented, and by heating them.

Abstract: The subject invention includes a composite material comprising a ferroelectric material and a ferromagnetic material having a loss factor (tan &dgr;) for the composite material which includes a dielectric loss factor of the ferroelectric material and a magnetic loss factor of the ferromagnetic material. The composite material achieves the loss factor of from 0 to about 1.0 for a predetermined frequency range greater than 1 MHz. The ferroelectric material has a dielectric loss factor of from 0 to about 0.5 and the ferromagnetic material has a magnetic loss factor of from 0 to about 0.5 for the predetermined frequency range. The ferroelectric material is present in an amount from 10 to 90 parts by volume based on 100 parts by volume of the composite material and the ferromagnetic material is present in an amount from 10 to 90 parts by volume based upon 100 parts by volume of the composite material such that the amount of the ferroelectric material and the ferromagnetic material equals 100 parts by volume.

Abstract: The invention described herein supplies a new class of electroactive polymeric blend materials which offer both sensing and actuation dual functionality. The blend comprises two components, one component having a sensing capability and the other component having an actuating capability. These components should be co-processable and coexisting in a phase separated blend system. Specifically, the materials are blends of a sensing component selected from the group consisting of ferroelectric, piezoelectric, pyroelectric and photoelectric polymers and an actuating component that responds to an electric field in terms of dimensional change. Said actuating component includes, but is not limited to, electrostrictive graft elastomers, dielectric electroactive elastomers, liquid crystal electroactive elastomers and field responsive polymeric gels. The sensor functionality and actuation functionality are designed by tailoring the relative fraction of the two components.

Abstract: The present invention is directed to a new family of high Curie temperature, morphotropic phase boundary systems, based on the perovskite solid solution having the general formula (1−x)BiMeO3-xPbTiO3, where Me is a suitably sized cation or combination of cations and x is a molar fraction. The perovskite systems of the present invention offer room temperature properties analogous to, and high temperature properties superior to, commercially available PZT compositions. The perovskite of this invention exhibits a MPB between the rhombohedral and tetragonal phases. Further dopant strategies may be used for property optimization of the perovskite systems.

Abstract: A piezoelectric material exhibiting a high Curie point and a high displacement at a low drive voltage is provided. The piezoelectric material contains as a main component a composite oxide and is expressed by the general formula [Pb{1−x1−x2−&agr;(x1−x2)}, A1x1, A2x2] {(Tiy, Zrz) (1−&bgr;(x1−x2)−&ggr;), (Y0.5, Nb0.5)&ggr;}O3, where y+z=1, 1.15<z/y<1.30 and 0<&ggr;<0.1; and A1, A2, x1, x2 satisfy any of the conditions (i) A1 is at least selected one of Ce and La, A2 is K, 0.02≦x1<0.08, 0≦x2≦0.05 (0.02≦x1+x2≦0.1, x1≦x2) and &agr;=0, &bgr;=0.25 or &agr;=0.5, &bgr;=0, and (ii) A1 is Sr, A2 is Ba, 0.03≦x1≦0.05, 0.03≦x2≦0.05 (|x1−x2|≦0.01), and &agr;=0, &bgr;=0.

Abstract: A ferroelectric Pb5Ge3O11 (PGO) thin film is provided with a metal organic vapor deposition (MOCVD) process and RTP (Rapid Thermal Process) annealing techniques. The PGO film is substantially crystallization with c-axis orientation at temperature between 450 and 650° C. The PGO film has an average grain size of about 0.5 microns, with a deviation in grain size uniformity of less than 10%. Good ferroelectric properties are obtained for a 150 nm thick film with Ir electrodes. The films also show fatigue-free characteristics: no fatigue was observed up to 1×109 switching cycles. The leakage currents increase with increasing applied voltage, and are about 3.6×10−7 A/cm2 at 100 kV/cm. The dielectric constant shows a behavior similar to most ferroelectric materials, with a maximum dielectric constant of about 45. These high quality MOCVD Pb5Ge3O11 films can be used for high density single transistor ferroelectric memory applications because of the homogeneity of the PGO film grain size.

Abstract: A piezoelectric ceramic composition contains a compound containing Na, Li, Nb and O, and having a perovskite structure, as a main component. The main component has a crystal phase in a semi-stable state at room temperature, such crystal phase originally not being stable at room temperature but being stable at a higher temperature.

Abstract: The invention comprises ferroelectric vapor deposition targets and to methods of making ferroelectric vapor deposition targets. In one implementation, a ferroelectric physical vapor deposition target has a predominate grain size of less than or equal to 1.0 micron, and has a density of at least 95% of maximum theoretical density. In one implementation, a method of making a ferroelectric physical vapor deposition target includes positioning a prereacted ferroelectric powder within a hot press cavity. The prereacted ferroelectric powder predominately includes individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to about 100 nanometers. The prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape having a density of at least about 95% of maximum theoretical density and a predominate maximum grain size which is less than or equal to 1.0 micron.

Abstract: Piezoelectric ceramics include a bismuth layer compound containing MII, Bi, Ti, Ln and O, wherein MII represents at least one element selected from the group consisting of Sr, Ba and Ca, and Ln represents at least one element selected from the group consisting of lanthanoids. The piezoelectric ceramics include MIIBi4Ti4O15 typed crystals, and a mole ratio of Ln/(Ln+MII) is 0<Ln/(Ln+MII)<0.5. In the case where MII is Sr, a mole ratio of 4Bi/Ti is 4.000<4Bi/Ti≦4.030. Preferably, piezoelectric ceramics further include Y oxide.

Abstract: A piezoelectric body is provided, including (Bi½Na½)TiO3 as a main component which is obtained by forming and sintering powders. A heterogeneous phase, other than (Bi½Na½)TiO3 system perovskite phase, in the powders has a peak ratio relative to the strongest peak of the perovskite phase of 5% or lower as determined by powder X-ray diffraction. As a result, the frequency of the dielectric breakdown in a sintered piezoelectric body during polarization can be dramatically reduced to 0.1 to 2% of that experienced in prior art compositions The manufacturing yield can be increased, manufacturing costs can be reduced, and the overall reliability of products manufactured therefrom can be improved.

Abstract: A device includes a polycrystalline body having a stoichiometry that is described by [Pb(Mg1/3Nb2/3))O3](1−x)[PbTiO3]x. The value of x is in a range of about 0.31 to about 0.47.

Abstract: The present invention provides a piezoelectric ceramic composition that can be manufactured easily by an ordinary sintering method, is free from lead, and has a large frequency constant, a small grain size, and a high mechanical Q. This composition is expressed by a formula of (1-v-w)[(Li1-x-yNaxKy)zRO3].vLMnO3.wBi1/2Na1/2TiO3. The present invention also provides a piezoelectric ceramic composition, including at least one selected from Mn, Cr, and Co that is added to a composition expressed by a formula of (Li1-x-yNaxKy)zRO3 so as to have a ratio thereof to the whole of 0.01 to 1 wt % in terms of MnO2, Cr2O3, and CoO, respectively. In the above-mentioned formulae, 0≦v≦0.05, 0≦0.2, v+w>0, 0.2≦x≦0.97, 0≦y≦0.8, x+y≧0.8, 0.98≦z≦1, L indicates at least one element selected from the rare earth elements, and R denotes at least one element selected from Nb, Ta, and Sb.

Abstract: A piezoelectric ceramic composition is provided that does not contain Pb, and yet has a large electromechanical coupling coefficient in comparison with a bismuth layered compound, as well as a piezoelectric ceramic element using the composition. This piezoelectric ceramic composition includes at least the elements Ag, Li, Nb, and O, and has an electromechanical coupling coefficient k33 of not less than about 20%.

Abstract: A piezoelectric ceramic compact is provided as an effective material for forming piezoelectric ceramic devices and the like, and is primarily composed SrBi2Nb2O9 containing no lead nor lead compounds or containing a little amount thereof, and has a maximum value Qmax improved to a level suitable for practical use. In the piezoelectric ceramic compact primarily having a bismuth-based layered compound containing Sr, Bi, Nb and oxygen, when the molar ratio of Sr, Bi and Nb contained as primary components in the bismuth-based layered compound is represented by a: b: c, the relationships represented by 0.275≦a/c<0.5 and 4≦(2a +3b)/c≦4.5 are satisfied.

Abstract: A piezoelectric ceramic material comprising a bismuth layer compound containing MII, Bi, Ti and O wherein MII is selected from Sr, Ba and Ca, and containing MIIBi4Ti4O15 type crystals, wherein MII, is represented by SrxBayCaz wherein x+y+z=1, utilizes thickness shear vibration when 0≦x≦ 1, 0≦y≦0.9, and 0≦z≦1, and thickness extensional vibration when 0≦x<0.9, 0≦y≦0.9, and 0≦z<1. Also provided is a piezoelectric ceramic material comprising a bismuth layer compound containing Ca, Bi, Ti, Ln and 0 wherein Ln is a lanthanoid, and containing CaBi4Ti4O15 type crystals, wherein the atomic ratio Ln/(Ln+Ca) is in the range: 0<Ln/(Ln+Ca)<0.5. These piezoelectric ceramic materials are free of lead, and have a high Curie point and improved piezoelectric characteristics.

Abstract: The present invention provides a piezoelectric ceramic composition that is free from lead and has a small grain size, a high coupling coefficient, a high mechanical Q, and a large frequency constant. This composition is characterized by being expressed by a formula of (LixNa1−x−yKy)z−2wMa2wNb1−wMbwO3, wherein 0.03≦x≦0.2, 0≦y≦0.2, 0.98≦z≦1, 0<w≦0.05, Ma indicates at least one element selected from the alkaline-earth metals, and Mb denotes at least one element selected from Bi, Sb, and the rare earth elements.

Abstract: The invention comprises ferroelectric vapor deposition targets and to methods of making ferroelectric vapor deposition targets. In one implementation, a ferroelectric physical vapor deposition target has a predominate grain size of less than or equal to 1.0 micron, and has a density of at least 95% of maximum theoretical density. In one implementation, a method of making a ferroelectric physical vapor deposition target includes positioning a prereacted ferroelectric powder within a hot press cavity. The prereacted ferroelectric powder predominately includes individual prereacted ferroelectric particles having a maximum straight linear dimension of less than or equal to about 100 nanometers. The prereacted ferroelectric powder is hot pressed within the cavity into a physical vapor deposition target of desired shape having a density of at least about 95% of maximum theoretical density and a predominate maximum grain size which is less than or equal to 1.0 micron.

Abstract: A piezoelectric ceramic for producing a piezoelectric element having sufficient strength and hardness in spite of compactness is provided. The piezoelectric ceramic contains lead titanate as a primary component and about 0.1 to 5% by weight of tungsten in terms of WO3 relative to the primary component, and about 75% or more of crystal particles constituting the piezoelectric ceramic have particle diameters distributed in the range of about 0.2 &mgr;m to 0.8 &mgr;m.

Abstract: The piezoelectric ceramic composition of the present invention contains, as a main component, a material having a composition represented by Formula: CaMXBi4−xTi4−X(Nb1−ATaA)XO15, where M is at least one element selected from the group consisting of Ca, Sr, and Ba; 0.0≦A≦1.0; and 0.0≦X≦0.6.

Abstract: The present invention provides a piezoelectric ceramic composition which contains no lead and has piezoelectric characteristics suitable for practical use. The piezoelectric ceramic composition has a complex perovskite structure represented by the formula: (1−x−y−z)BaTiO3-x(Bi1/2Na1/2)TiO3-yCaTiO3-zBa (Zn1/3Nb2/3)O3 and comprises Ba, Ti, O, Bi, Na, Ca, Zn and Nb in the proportion satisfying the following conditions of x, y and z: 0.0<x≦0.90, 0.0≦y≦0.20, and 0.0≦z≦0.05.

Abstract: A piezoelectric ceramic composition mainly contains a component of the formula SrBi2Nb2O9 and includes at least a trivalent metallic element other than Bi constituting the main component in a proportion of more than 0 mol and equal to or less than about 0.15 mol relative to 1 mol of Bi in the main component. This piezoelectric ceramic composition mainly containing SrBi2Nb2O9 is useful as a material for a piezoelectric ceramic device having an improved temperature-dependent factor of resonant frequency. Such a satisfactory piezoelectric ceramic device is also provided using this piezoelectric ceramic composition.

Abstract: A piezoelectric actuator, comprising a stacked structure consisting of a top electrode 5, a piezoelectric film 4, and a bottom electrode 3, wherein the piezoelectric film comprises a first group 42 of piezoelectric ceramic particles and a second group 43 of piezoelectric ceramic particles. A distinctive feature is that the particles constituting the first group of piezoelectric ceramic particles are larger than the jingo particles constituting the second group of piezoelectric ceramic particles, and the first group of piezoelectric ceramic particles and the second group of piezoelectric ceramic particles have mutually different compositions. The piezoelectric actuator can thus be manufactured by an application method in a low-temperature environment, and a thicker piezoelectric film can be obtained. In addition, a highly practical piezoelectric film can be provided by combining the advantages of a plurality of material types.

Abstract: When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a” contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.

Abstract: A piezoelectric ceramic is a bismuth-layer compound having SrBi4Ti4O15-type crystal. The axial ratio c/a of crystal lattice is in the range of 7.46 to 7.67.

Abstract: A piezoelectric ceramic composition that can yield a piezoelectric ceramic capable of being fired at a temperature as low as 1100° C. or below and exhibiting an electromechanical coupling coefficient sufficient for providing a piezoelectric ceramic element for practical use, and a piezoelectric ceramic element using the same, wherein the piezoelectric ceramic composition comprises a principal component represented by a general formula of CaBi4(Ti1−ySiy)4O15 with y within the range of 0<y≦0.5, possibly containing other divalent or trivalent elements, and wherein a piezoelectric ceramic element, in which electrodes are formed on both principal faces of the piezoelectric ceramic while forming an inner electrode within the piezoelectric ceramic, can be formed using the piezoelectric ceramic composition.

Abstract: An alkali metal-containing niobate-based piezoelectric material composition comprises a solid solution represented by a composition formula (ANbO3) (A: alkali metal), and at least one additive selected from Cu, Li and Ta.

Abstract: A piezoelectric ceramic material which can suppress segregation of a W compound or a W oxide in W-containing sintered PbTiO3 and a piezoelectric transducer employing the ceramic material. The ceramic material contains lead titanate as a primary component; an Mn-containing oxide or an Mn-containing compound and a W-containing compound or a W-containing oxide as secondary components; and an Si-containing oxide or an Si-containing compound as an additional component. Alternatively, the piezoelectric ceramic material contains a primary component containing PbTiO3 and Pb(MnyW(1−y))O3 and additionally SiO2 or PbSiO3.

Abstract: To provide a piezoelectric ceramic composition predominantly comprising CaBi4Ti4O15, which composition can be fired at 1100° C. or lower, which exhibits an electromechanical coupling coefficient (kt) of a sufficient level for practical use, and which serves as a useful material for producing ceramic piezoelectric devices such as piezoelectric filters, piezoelectric oscillators and piezoelectric transducers, and to provide a ceramic piezoelectric device employing the composition, the piezoelectric ceramic composition comprises a component represented by the formula CaBi4Ti4O15, wherein the composition contains W in an amount of about 0.5 mol or less per mol of Bi.

Abstract: The invention includes a method for forming a ceramic composition. Materials comprising lead, zirconium, titanium and bismuth are combined together to form a mixture. At least one of the materials is provided in the mixture as a nanophase powder. The mixture is then densified to form the ceramic composition. The invention also includes a method for forming a dense ferroelectric ceramic composition. Lead, zirconium, titanium and bismuth are combined together to form a mixture. The mixture is then densified to form a ferroelectric ceramic composition having a density of greater than or equal to 95% of a theoretical maximum density for the composition. A predominate portion of the composition has a grain size of less than or equal to about 500 nanometers. The invention also includes a ferroelectric ceramic composition comprising lead, zirconium, titanium and bismuth.

Abstract: A piezoelectric paste which is used for forming a piezoelectric thick film by the thick film forming technique, which can be burned at a relative low temperature and which can form a piezoelectric film having good polarizability and high piezoelectricity while maintaining the ferroelectricity possessed by a piezoelectric crystal powder contained in the piezoelectric paste contains the piezoelectric crystal powder containing a Pb(Zr, Ti)O3 system ceramic, a crystallized glass powder and an organic vehicle, wherein the crystallized glass powder used precipitates a Pb(Zr, Ti)O3 system solid solution phase by heat treatment.

Abstract: The present invention relates to the preparation of compositions and/or ferroelectric ceramic materials having niobate anions in combination with lead, barium, lanthanum, and bismuth cations. In preferred embodiments, the compositions comprised the formula Pb(x−3y/2−3z/2)Ba(1−x)LayBizNb2O6, wherein x is from about 0.4 to about 0.6, y is from about 0.01 to about 0.03, and z is from about 0.01 to about 0.03. The compositions may be easily poled, and have unexpectedly high piezoelectric charge coefficients and unexpectedly high dielectric constants. The invention also provides processes for preparing the compositions, ferroelectric ceramic materials, and articles comprising the ferroelectric ceramic materials.

Abstract: A sol-gel precursor mixture for forming a perovskite ferroelectric material and a method for forming a ferroelectric material are provided. The precursor solution comprises a sol-gel formulation of a mixture of an inorganic salt of at least one metal, and metal-organic compounds of other constituent metals in a suitable pH controlled aqueous solvent mixture to form a stable, clear sol-gel mixture. The precursor solution and method provides for formation of thin layers of other ferroelectric dielectrics and piezoelectric materials, particularly lead containing materials, for application including non-volatile DRAMs, optoelectronic devices relying on non-linear optical properties, and piezoelectric devices, and is compatible with processing for submicron device structures for bipolar, CMOS or bipolar CMOS circuits.

Abstract: A method for producing ceramic oxide powder having a grain size of 5 &mgr;m or less and exhibiting a uniform grain size distribution is disclosed. The method includes the steps of sufficiently dissolving or uniformly dispersing a raw material of constituent ceramic elements in a solvent or dispersion medium, thereby preparing a solution or dispersed mixture containing the constituent ceramic elements, adding citric acid in the solution or dispersed mixture, in which the constituent ceramic elements are dissolved or dispersed, at least in an amount required to generate an oxidative-reductive combustion reaction with anions of the constituent ceramic elements, thereby preparing a mixed solution, and thermally treating the mixed solution at a temperature of 100 to 500° C.

Abstract: A piezoelectrically active conformal filler material is incorporated in a 1-3, 3-3 or 2-2 piezocomposite structure. The piezoelectrically active conformal filler material has a 0-3 structure and is made of fine piezoelectric ceramic particles surrounded by a conformal polymer matrix. Using such piezocomposite material, the reception and transmission sensitivity (efficiency) of a piezoelectric layer can be improved without any increase in the acoustic impedance of the final piezoelectric layer. The resulting piezocomposite material can be used to fabricate ultrasonic transducer arrays.

Abstract: A lead-free piezoelectric ceramic composition is composed of a main component represented by the general formula (Sr1−xM1x)Bi2(Nb1−yWy)2O9, wherein M1 is one of divalent metals other than Sr and trivalent metals other than Bi, 0<x≦0.3, and 0<y≦0.3. Examples of the divalent metals and trivalent metals include Ca, Ba, Mg, La, Ce, Pr, Nd, Sm, Gd, Dy, Er, Yb, Sc and Y. The piezoelectric ceramic composition can be sintered at a relatively low temperature of 1,100° C. or less, and has an electromechanical coupling coefficient kt which is at a practical level. The piezoelectric ceramic composition may be used in piezoelectric ceramic filters, piezoelectric ceramic oscillators and piezoelectric ceramic vibrators.

Abstract: A piezoelectric ceramic composition is composed of a main component represented by the general formula (Ca1-xM1x)Bi4Ti4O15 wherein M1 is one of divalent metals other than Ca and trivalent metals other than Bi, and 0<x≦0.45, and manganese as an auxiliary component in an amount of more than 0 to not more than about 1.5 percent by weight as MnCO3. Examples of the divalent metals and trivalent metals include Sr, Ba, Mg, La, Ce, Pr, Nd, Sm, Gd, Dy, Er, Yb, Sc and Y. The piezoelectric ceramic composition has an electromechanical coupling coefficient kt of at least 10%, which a practical level. The piezoelectric ceramic composition may be used in piezoelectric ceramic filters, piezoelectric ceramic oscillators and piezoelectric ceramic vibrators.

Abstract: Piezoelectric ceramics which is made of compounds shaped in bismuth layer containing Sr, Bi, Ti and Ln (lanthanoid). The compound contains SrBi4Ti4O15 typed crystals. In the piezoelectric ceramics, an atomic ratio of Ln/(Sr+Ln) is 0<Ln/(Sr+Ln)<0.5.

Abstract: A single crystal perovskite material is provided having the formula, M&agr;Bi&bgr;M′&ggr;M″&dgr;O3±z, where M is one or more of Na, K, Rb and Cs; M′ is one or more of Ca, Sr, Ba, Pb, Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M″ is one or more of Ti, Zr, Hf, Sn, Ge, Mg, Zn, Al, Sc, Ga, Nb, Mo, Sb, Ta and W; where z≦0.1; 0.9≦&dgr;≦1.1; &agr;, &bgr; and &ggr; are greater than zero; and (&agr;+&bgr;+&ggr;) is in the range of about 0.75 to 1.1. A perovskite material of the formula, Na&ohgr;M&agr;Bi&bgr;M′&ggr;M″&dgr;O3±z, is provided where M is one or more of K, Rb and Cs; M′ is one or more of Ca, Sr, Ba, Pb, Y, La, Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu; M″ is one or more of Ti, Zr, Hf, Sn, Ge, Mg, Zn, Al, Sc, Ga, Nb, Mo, Sb, Ta and W; where z≦0.1; 0.9≦&dgr;≦1.1; &agr;, &bgr; and &ggr; are greater than zero; and (&agr;+&bgr;+&ggr;) is in the range of about 0.75 to 1.1.