Abstract: A field-effect transistor structure wherein a single patterned thin film semiconductor layer: is monocrystalline, and epitaxially matched to and dielectrically isolated from an underlying body region, in channel locations; and is polycrystalline in source/drain locations which abut said channel locations.

Abstract: A chain tensioner is provided with a take-up hook (21) connected to the junction area (30) between the shank (3) thereof and double hook end (4) by means of a chain (20). The take-up chain (20) has an end link (23) surrounding the shank material of the tensioner and which is bound by its form between the shank portion (23) on one side and material projections (22) on the flattened end portion (4). The link (23) surrounds the junction area (30) with clearance so that the link (23) can be swung relative to the direction of the shank (3). The link (23) connecting the take-up chain (20) to the tensioner is to advantage made in a C-shape so that the take-up chain (20) with hook (21) can be easily hooked-on to or hooked off the tensioner.