Abstract: The exemplified systems, and method thereof, includes PLZT thin film (Pb0.95La0.05Zr0.54Ti0.46O3) paired with a bottom metal and top transparent conductive oxide, that forms a capacitor structure with enhanced photocurrent and power conversion efficiency. The exemplified systems use metal electrode (platinum) as bottom electrode and a transparent oxide (Indium Tin Oxide—ITO) as the top electrode. In some embodiments, the capacitor structure are used in a solar cells, ultraviolet sensors, or UV indexing sensors. In some embodiments, the capacitor structure are energy generation or for medical diagnostics (e.g., for skin care application).

Abstract: The invention relates to a ceramic material for capacitors. In order to achieve reduced self-heating on assembly of the material into multilayer capacitors with antiferroelectric properties and a high dielectric constant, a ceramic material of formula ?Pb(1-r)(BaxSryCaz)r?(1-1.5a-1.5b-0.5c)(XaYb)Ac(Zr1-dTid)O3 is proposed, where X and Y both represent a rare metal earth selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and/or Yb; where A represents a monovalent ion; x+y+z=1; x and/or y and/or z>0; 0<r<0.3; 0<d<1; 0<a<0.2; 0<b<0.2; 0<c<0.2.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a barium strontium zirconate matrix doped with other metal oxides such as TiO2, CaO, B2O3, and MgO in various combinations.

Abstract: A component body is obtained by alternately laminating and sintering a plurality of semiconductor ceramic layers formed of a SrTiO3-based grain boundary insulated semiconductor ceramic and a plurality of internal electrode layers. The average grain diameter of crystal grains is 1.0 ?m or less and a coefficient of variation representing variations in a grain diameter of the crystal grains is 30% or less. To prepare the semiconductor ceramic an Sr compound, a Ti compound and a donor compound are weighed in predetermined amounts and mixed/pulverized. A calcined powder is prepared and a dispersant is added with an acceptor compound to the calcined powder. The resulting mixture is wet-mixed and a heat-treated powder is prepared. The heat-treated powder is formed into slurry and subjected to a filter treatment. The filtered slurry is used to prepare a semiconductor ceramic.

Abstract: Disclosed herein is a multilayer ceramic device. The multilayer ceramic device according to an exemplary embodiment of the present invention includes: a device body having sides which are spaced apart from each other and a circumferential surface which connects the sides; an internal electrode disposed in a longitudinal direction of the device body within the device body; an external electrode having a front part which covers the sides and a band part which extends from the front part to cover a portion of the circumferential surface; and a crack guide pattern disposed within the device body and guiding a progress direction of cracks occurring at the circumferential surface to the sides, wherein the crack guide pattern includes: a metal pattern; and an oxide layer formed on a surface of the metal pattern.

Abstract: A multi-layer ceramic capacitor has a structure where the dispersion, nd, of average grain size of the dielectric grains constituting the dielectric layer (a value (D90/D10) obtained by dividing D90 which is a grain size including 90% cumulative abundance of grains by D10 which is a grain size including 10% cumulative abundance of grains) is smaller than 4.

Abstract: There is provided a dielectric composition for low-temperature sintering including BaTiO3 as a main ingredient, and xB2O3-(1-x)BaOas an accessory ingredient, wherein x ranges from 0.25 to 0.8, and the content of the accessory ingredient ranges from 0.1 to 2.00 mol %, based on 100 mol % of the main ingredient.

Abstract: There is provided a multilayer ceramic capacitor to be embedded in a board, including: a ceramic body; first and second internal electrodes alternately exposed through end surfaces of the ceramic body; first and second external electrodes formed on end surfaces of the ceramic body; and first and second plating layers enclosing the first and second external electrodes, wherein when distance from one end of bands of the first or second external electrode to the other end thereof is ‘A’ and distance between points at which a virtual line drawn from a point vertically spaced apart from a surface of the first or second plating layer at a point ½×A from one end of the bands inwardly of the ceramic body by 3 ?m in length direction of the ceramic body intersects points on the surface of the first or second plating layer is ‘B,’ B/A?0.6.

Abstract: Disclosed is (1) an anode body for capacitors, which is composed of a sintered body containing tungsten dioxide in amount of 80 mass % or more and preferably silicon element in amount of 3.4 mass % or less, (2) a powder as a raw material of the sintered body containing a mixture of tungsten dioxide and silicon element powder in an amount of 80 mass % or more and 3.4 mass % or less, respectively, and which may optionally contain metal tungsten powder, (3) a method for producing an anode body for capacitors, and (4) an electrolytic capacitor which uses the anode body as one electrode and has a dielectric body interposed between the electrode and a counter electrode.

Abstract: There is provided a composite conductive powder including a conductive particle, and a coating layer formed on a surface of the conductive particle and including glass, wherein when a thickness of the coating layer in a portion A in which the coating layer is the thickest, on the surface of the conductive particle is defined as a, and a thickness of the coating layer in a portion B forming an angle of 90° with respect to the portion A on the surface of the conductive particle, based on a center of the conductive particle is defined as b, 0.1?b/a?0.7 is satisfied.

Abstract: The present invention is a new composition of matter and can be used as components of a capacitor. The dielectric properties possess in this material has improved tremendously as compared to the existing component. The finding of high dielectric permittivity in the present invention ceramic according to its formulation and processing technique that can operate or use at wide range frequencies and temperatures are very useful in electronic and electrical devices. The present invention is best for applications at the range of temperatures. The permittivity is recorded at 1 kHz are between ˜20,000 to ˜54,000 and almost constant over three decade of frequency. Thus, the dielectric permittivity obtained can be used as energy storage, sensor, electric filter, etc., besides minimizing the devices size.

Abstract: A dielectric ceramic is formed with sintered grains constituting the dielectric have an average grain size of 0.2 to 1.0 gm and an oxygen defect concentration of 0.2 to 0.5%. An acceptor element is added to the dielectric ceramic by no more than 0.5 mol per 100 mol of the primary component of BaTiO3. The oxygen defect concentration is temporarily increased by reduction and sintering, after which the oxygen defect concentration is reduced through the subsequent re-oxidization process. Crystal strain generated in the re-oxidization process increases the dielectric constant.

Abstract: Provided in a dielectric ceramic having flat capacitance characteristics and a high dielectric constant, and a multilayer ceramic electronic component (such as a multilayer ceramic capacitor) in which the dielectric ceramic is used. A multilayer ceramic capacitor includes a multilayer body having a plurality of dielectric ceramic layers and a plurality of internal electrodes, and external electrodes formed on the multilayer body. The composition of the multilayer body includes any of a bismuth layered compound containing Sr, Bi and Ti, a bismuth layered compound containing Sr, Bi and Nb, and a bismuth layered compound containing Ca, Bi and Ti as a primary ingredient, Bi and at least one of Cu, Ba, Zn and Li, and satisfies the conditions that if the Ti content is 400 molar parts or the Nb content is 200 molar parts, then (Bi content-Ti content) or (Bi content-Nb content) is equal to or greater than 1 molar part and less than 7.

Abstract: A dielectric ceramic whose primary component is an ABO3 compound (A contains Ba and B contains Ti) has a per-layer thickness of approx. 0.5 ?m or less, where the volume ratio to all dielectric sintered grains of those whose grain size is in a range of 0.02 ?m to 0.15 ?m is adjusted to a grain size distribution of 1% to 10%. High dielectric constant and high reliability can be achieved at the same time with the dielectric ceramic.

Abstract: A method for manufacturing a laminated ceramic capacitor by firing a laminated body which includes dielectric ceramic layers containing a dielectric ceramic raw material powder and internal electrodes. The firing is carried out in accordance with a temperature profile in which the average rate of temperature rise is 40° C./second or more from room temperature to a maximum temperature. The dielectric ceramic raw material powder contains a BaTiO3 system as its main constituent, and contains R (R is Sc, etc.), M (M is Mn, etc.), and Mg as accessory constituents, in which, when the total amount of the accessory constituents contained is denoted by D parts by mol with respect to 100 parts by mol of the main constituent, an the specific surface area of the main constituent is denoted by E m2/g, then D/E is 0.2 to 0.8.

Abstract: The present invention provides an electrode for a supercapacitor, a fabrication method thereof, and a supercapacitor comprising the same. The electrode exhibits enhanced specific capacitance and electrical conductivity, among others, due to the fact that it comprises a porous composite metal oxide layer which has the structure of a web of entangled nanofibers or has a nanoparticle network structure.

Abstract: A multilayer ceramic capacitor exhibits superior life characteristics in a high temperature load test despite the use of very thin dielectric layers. As a dielectric ceramic constituting a dielectric layer of the multilayer ceramic capacitor, a perovskite-type compound is used and contains Ba and Ti (a portion of Ba can be replaced with at least one of Ca and Sr, and a portion of Ti can be replaced with Zr) as a main component, and including La within the range of 2-6 parts by mole, Mg within the range of 3-5 parts by mole, and Mn within the range of 1.5-3 parts by mole in a case where a total content of Ti and Zr is 100 parts by mole.

Abstract: There is provided a multilayer ceramic electronic component, including: a ceramic body; and internal electrodes formed inside the ceramic body and having a plurality of non-electrode regions, wherein, on a cross-section taken in length and thickness directions of the ceramic body, when a thickness of the internal electrode is denoted by Te, a continuity of the internal electrode is denoted by C, an area of the internal electrode is denoted by Ae, an area of the plurality of non-electrode regions is denoted by Ao, and a maximum diameter of the non-electrode region having the maximum diameter among the plurality of non-electrode regions is denoted by Pmax, 0.1 ?m?Te?0.5 ?m, 1.1%?Ao/Ae?3.2%, Pmax?120 nm, and 95%?C?99.5% are satisfied.

Abstract: Provided is a laminated ceramic capacitor having excellent lifetime characteristics in a high-temperature loading test. It includes a laminated body including a plurality of stacked dielectric layers including crystal grain and crystal grain boundaries, and a plurality of internal electrodes and external electrodes. The laminated body contains, as its main constituent, a perovskite-type compound containing Ba and Ti and optionally Ca, and further contains a rare-earth element R, and Mn, Mg, V, and Si With respect to 100 parts by mol the Ti, the total parts by mol content (100×m) of Ba and Ca is 0.950?m<1.000, the contents in terms of parts by mol is 0.3?R?2.5, 0.05?Mn?0.5, 0.5?Mg?2.0, 0.05?V?0.25, 0.5?Si?3.0, and further, the molar ratio x of Ca/(Ba+Ca) is 0?x?0.01, and the existence of the rare-earth element R in a position of 4 nm inner from a surface of the crystal grain is 20% or more.

Abstract: Provided is a laminated ceramic capacitor which can suppress degradation of the insulation resistance due to the addition of vanadium. Second insulating layers are stacked on both sides in the stacking direction of a first insulating layer group, which has first insulating layers stacked over one another, and internal electrodes are placed on principal surfaces of the first insulating layers. At least one internal electrode is placed between the first and second insulating layers. Both contain, as their main constituent, a perovskite-type compound represented by the formula “ABO3” wherein “A” denotes at least one of Ba, Sr, and Ca, “B” denotes at least one of Ti, Zr, and Hf. V is added to only the first insulating layers.

Abstract: A multilayer ceramic capacitor, having a plurality of electrode layers and a plurality of substantially titanium dioxide dielectric layers, wherein each respective titanium dioxide dielectric layer is substantially free of porosity, wherein each respective substantially titanium dioxide dielectric layer is positioned between two respective electrode layers, wherein each respective substantially titanium dioxide dielectric layer has an average grain size of between about 200 and about 400 nanometers, wherein each respective substantially titanium dioxide dielectric layer has maximum particle size of less than about 500 nanometers. Typically, each respective substantially titanium dioxide dielectric layer further includes at least one dopant selected from the group including P, V, Nb, Ta, Mo, W, and combinations thereof, and the included dopant is typically present in amounts of less than about 0.01 atomic percent.

Abstract: Ceramic dielectric materials that can be utilized as electronic components, such as dielectric resonators are disclosed. The material can have a formula Ba12M?(28+a/3)Ti(54?a-b)M?aGebO162, wherein M? is at least one rare earth element selected from the group consisting of lanthanum, neodymium, samarium, gadolinium, and yttrium, M? is at least one element selected from the group consisting of aluminum, gallium, chromium, indium, scandium, and ytterbium, 0?a?6, and 0?b?3. The ceramic dielectric material can also have a formula Ba12M?(28+2x/3)Ti(54?x?y)M??xGeyO162, wherein M? is at least one rare earth element selected from the group consisting of lanthanum, neodymium, samarium, gadolinium, and yttrium, M?? is at least one metal selected from the group consisting of magnesium, zinc, nickel, and cobalt, 0?x?3, and 0?y?3. One or more aspects of the present invention pertain to methods of fabricating a dielectric component. Methods of synthesizing the disclosed ceramic dielectric materials are also disclosed.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, Al2O3, SiO2, and SrO in various combinations.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, Al2O3, SiO2, and SrO in various combinations.

Abstract: A ceramic mixed system is proposed that includes a two-phase mixture of pure components A and B, wherein phase A is based on the cubic to tetragonal modification of Bi3NbO7 and phase B is based on a monoclinic pyrochlore modification of Bi2(Zn2/3Nb4/3)O7. The electrical properties of ceramics produced therefrom make the material suitable for components having a multilayer structure in which capacitors and inductors are integrated and which can be used in data processing or signal processing.

Abstract: An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.

Abstract: There is provided a high-frequency dielectric material that has a high relative permittivity, a high Q value, and a TCF property value close to zero (0) and can realize co-firing of the dielectric material with silver (Ag) and copper (Cu). The high-frequency dielectric material is characterized by comprising a composition of main constituent materials having a formulation of CaO: 1 mole, Nb2O5: (1??×?)/3 mole, ZnO: (1??)/3 mole, TiO2: ? mole, and Li2O: ?×(1??)/6 mole, wherein 0.65???0.75, 0.09???0.15, 0.066??×??0.100, and 0.15???0.35; and 1 to 5 parts by weight, based on 100 parts by weight of the composition of main constituent materials, of a sintering aid selected from the group consisting of oxides of copper (Cu), boron (B), lithium (Li), bismuth (Bi), and vanadium (V) and a mixture of two or more of the oxides.

Abstract: (1) A niobium monoxide powder for a capacitor represented by formula: NbOx (x=0.8 to 1.2) and optionally containing other elements in an amount of 50 to 200,000 ppm, having a tapping density of 0.5 to 2.5 g/ml, an average particle size of 10 to 1000 ?m, angle of repose from 10° to 60°, the BET specific surface area from 0.5 to 40 m2/g and a plurality of pore diameter peak tops in the pore distribution, and a producing method thereof; (2) a niobium monoxide sintered body, which is obtained by sintering the above niobium monoxide powder and, having a plurality of pore diameter peak tops in a range of 0.01 ?m to 500 ?m, preferably, the peak tops of two peaks among the plurality of pore diameter peak tops having a highest relative intensity are present in the range of 0.2 to 0.7 ?m and in the range of 0.7 to 3 ?m, respectively, and a producing method thereof; (3) a capacitor using the above sintered body and a producing method thereof; and (4) an electronic circuit and electronic device using the above capacitor.

Abstract: A dielectric green sheet containing a dielectric ceramic powder, conductor green sheets containing a metal powder, and firing-assisting green sheets containing an inorganic oxide material powder are prepared, and the firing-assisting green sheet, the conductor green sheet, the dielectric green sheet, another conductor green sheet, and another firing-assisting green sheets are stacked in that order to prepare a laminate. The laminate is then fired. During firing, the bonding strength of the interfaces between the conductor green sheets and the firing-assisting green sheets is decreased and the oxygen partial pressure of the firing atmosphere is changed at least once so that the capacitor portion is separated from the firing-assisting green sheets. In this manner, a method for manufacturing thin film capacitor by which a high-reliability thin film capacitor can be produced at high efficiency and low cost without adversely affecting the characteristics of the thin film capacitor.

Abstract: Multilayer ceramic chip capacitors which satisfy X8R requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a barium titanate base material doped with other metal oxides such as BaO, Y2O3, ZrO2, SiO2, MgO, MnO, MoO3, CaO, Lu2O3, Yb2O3, or WO3 in various combinations.

Abstract: The present invention concerns the field of solid state capacitors and in particular high performance capacitors for use in modern electronic devices. Specifically, the present invention relates to a method by which powders of valve-action material may be modified to make them suitable for use in the formation of capacitor anodes for solid state electrolytic capacitors. According to the present invention there is provided a method of modifying raw valve-action material powder into capacitor grade structured powder comprising: (i) providing a raw powder to be converted; (ii) compressing a portion of the powder to form a porous solid mass of powder (iii) heating the solid mass to a pre-determined sintering temperature and maintaining the temperature for a pre-determined time period to form a sintered body, (iv) pulverising the sintered body to form a processed powder and (v) optionally grading the powder particles within pre-determined size ranges so as to collect capacitor grade powder.

Abstract: A dielectric ceramic contains a barium titanate and Li. In the dielectric ceramic, the following inequalities are satisfied: 0.5?e?6.0, 0.06<Rg<0.17, and ?g<0.075, where e is the content, in molar parts, of Li with respect to 100 molar parts of the titanate; Rg is the average size, in ?m, of grains in the dielectric ceramic; and ?g is the standard deviation, in ?m, of the size of the grains.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: The present invention provides an electrode for a supercapacitor, a fabrication method thereof, and a supercapacitor comprising the same. The electrode exhibits enhanced specific capacitance and electrical conductivity, among others, due to the fact that it comprises a porous composite metal oxide layer which has the structure of a web of entangled nanofibers or has a nanoparticle network structure.

Abstract: A dielectric ceramic composition comprised of at least dielectric particles having barium titanate as its main ingredient, wherein the ratio of dielectric particles having a surface diffusion structure comprised of a main ingredient phase comprised of the main ingredient and a diffusion phase present around the main ingredient phase with respect to said dielectric particles is 60% or more and the ratio of dielectric particles having a domain in the main ingredient phase with respect to the dielectric particles having the surface diffusion structure is 20% or less. According to the present invention, a dielectric ceramic composition and electronic device realizing good high temperature accelerated life can be provided.

Abstract: A ceramic powder having a perovskite structure is manufactured by synthesizing a ceramic powder by a dry synthesis process and then heat-treating the synthesized ceramic powder in a solution. The dry synthesis method includes a solid phase synthesis method, an oxalate method, a citric acid method and a gas phase synthesis method.

Abstract: A ceramic electronic device including a dielectric layer, wherein the dielectric layer includes a main component expressed by a composition formula of Bam TiO2+m, wherein “m” satisfies 0.995?m?1.010 and a ratio of Ba and Ti satisfies 0.995?Ba/Ti?1.010, and a subcomponent (a sixth subcomponent) including an oxide of Al; and a content of the Al compound is 0 to 4.0 moles (note that 0 is not included) in terms of Al2O3 with respect to 100 moles of the main component; and preferably, the dielectric layer includes a segregation phase, and the segregation phase includes an oxide of Al.

Abstract: A ceramic electronic device having a dielectric layer, wherein the dielectric layer includes a main component containing a (Ba, Ca (Ti, Zr)O3 based material and a subcomponent containing an oxide of Si; and a content of the Si oxide is 0 to 0.4 wt % (note that 0 is not included) with respect to the entire dielectric layer; and preferably the dielectric layer has a segregation phase; and the segregation phase contains an oxide of Si and substantially not containing an oxide of Li; by which it is possible to provide a ceramic electronic device, such as a multilayer ceramic capacitor, having a low IR defect rate (initial insulation resistance defect rate), excellent high temperature load lifetime and high reliability.

Abstract: Multilayer ceramic chip capacitors which satisfy X7R and BX requirements and which are compatible with silver-palladium internal electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a lead-free and cadmium-free barium titanate base material doped with other metal oxides such oxides of zinc, boron, bismuth, cerium, tungsten, copper, manganese, neodymium, niobium, silver, barium, silicon and nickel in various combinations. The dielectric ceramic materials herein can be sintered together (fired) at less than 1000° C. with an inner electrode having more than 80 wt % Ag and less than 20 wt % Pd to form a multilayer ceramic capacitor (MLCC).

Abstract: The invention provides a multilayer ceramic capacitor comprising a capacitor body composed by alternately layering dielectric layers and inner electrode layers, and each of the above mentioned dielectric layers contains a plurality of crystal particles, and grain boundary phases comprising interfacial grain boundaries and triple point grain boundaries formed among a plurality of the crystal particles adjacent to one another, and Si—Ba—O compound being formed in 5% or more of the triple point grain boundaries in the entire triple point grain boundaries per unit surface area of the dielectric layer. Accordingly, the multilayer ceramic capacitor has high relative permittivity and is high the temperature property and highly accelerated life test property.

Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.

Abstract: A method produces a component having a ceramic base body and contact surfaces on opposite sides of the ceramic base body. The method includes forming first protective layers on the opposite sides of the ceramic base body in regions not to be covered by the contact surfaces, forming second protective layers on opposite surfaces of the ceramic base body, sintering the ceramic base body with the first and second protective layers at a first temperature, forming the contact surfaces on the ceramic base body, and sintering the contact surfaces at a temperature that is lower than the first temperature.

Abstract: A method of manufacturing a multilayer ceramic capacitor includes the steps of: preparing a mixture of a raw material powder mainly composed of barium titanate particles; forming the mixture and a binder into a green sheet; alternately layering the green sheet and an internal electrode to obtain a laminated body; and sintering the laminated body. The step of preparing the mixture includes the steps of: introducing the raw material powder and the dispersion medium into a mixing container, and stirring them with balls serving as a mixing medium, to obtain a slurry containing a raw material powder mixture; and drying the slurry. The mixing medium has a diameter that is equal to or less than 400 times the mean particle size of the barium titanate particles of the raw material. The present invention provides a multilayer ceramic capacitor having good DC bias characteristics by suppressing the variation in crystal particles.

Abstract: A method of producing a multilayer ceramic capacitor having internal electrode layers and dielectric layers with dielectric particles is disclosed. An average particle diameter of the dielectric particles, when measured parallel with the direction of the internal electrode layers, is larger than a thickness of the dielectric layer. A ratio (R/d) between the average particle diameter (R) and the thickness (d) of the dielectric layer is 1<R/d<3.

Abstract: A material made of a dielectric oxide of type Ca0.25Cu0.75TiO3 having a dielectric constant greater than 3,000.

Abstract: A method of producing a multilayer ceramic electronic device, having a firing step for firing a pre-firing element body wherein a plurality of dielectric layers and internal electrode layers containing a base metal are alternately arranged, characterized in that the firing step has a temperature raising step for raising a temperature to a firing temperature, and hydrogen is continued to be introduced from a point in time of the temperature raising step. According to the method, it is possible to provide a method of producing a multilayer ceramic electronic device, such as a multilayer ceramic capacitor, wherein shape anisotropy and other structural defaults are hard to occur and electric characteristics are improved while suppressing deterioration thereof even if dielectric layers becomes thinner and stacked more.

Abstract: The dielectric composition contains a mixture of a ceramic composition containing BaaREbTicO3, wherein RE represents a rare earth element, with 0.05?a?0.25, 0.525?b?0.70, 0.85?c?1.0, and 2a+3b+4c=6, and free from lead and bismuth, a glass composition, and a metal oxide. The glass composition preferably contains ZnO or MgO, SiO2, and at least 10% by weight of Li2O or TiO2. Preferably, the alkaline earth metal oxide is MgO. By preference, the glass composition essentially consists of 50–80% weight of SiO2, 5–25% weight of MgO, and optionally another alkaline earth metal oxide, and 10–25% by weight of Li2O, and is substantially free from boron. The dielectric composition can be sintered in the presence of Cu electrodes at a temperature below the melting point of Cu so as to manufacture an electronic device such as a ceramic multilayer element. After sintering, the dielectric composition has a relative dielectric constant of at least 55.

Abstract: A method of fabricating a thin dielectric film, a thin dielectric film formed according to the method, and a system including the thin dielectric film. The method includes: depositing a ceramic precursor material on a metal sheet, the ceramic precursor material including a mixture comprising ceramic particles and an organic carrier medium; heat treating the ceramic precursor material such that the organic carrier medium is substantially burnt off, and further such that a dielectric layer is formed including ceramic grains formed from the ceramic particles, and having grain sizes between about 100 nm and about 500 nm; depositing a CSD precursor material onto the dielectric layer; and heat treating the CSD precursor material such that organics in the CSD precursor material are substantially burnt off, and further such that a CSD medium is formed from the CSD precursor material including CSD grains substantially filling the voids between the ceramic grains.

Abstract: A dielectric ceramic composition comprising a main component including 53.00 to 80.00 mol % magnesium oxide converted to MgO, 19.60 to 47.00 mol % titanium oxide converted to TiO2 and 0.05 to 0.85 mol % manganese oxide converted to MnO. This dielectric ceramic composition may comprises 0.00 to 0.20 mol % of at least any one of vanadium oxide, yttrium oxide, ytterbium oxide or holmium oxide converted to V2O5, Y2O3, Yb2O3 and Ho2O3 respectively.

Abstract: A dielectric ceramic composition comprising at least a main component containing a dielectric oxide of a composition expressed by {(Sr1?xCax)O}m.(Ti1?yZry)O2 and a first subcomponent containing at least one type of compound selected from oxides of V, Nb, W, Ta, and Mo and/or compounds forming these oxides after firing, wherein the symbols m, x, and y showing the molar ratio of the composition in the formula contained in the main component are in relations of 0.94<m<1.08, 0?x?1.00, and 0?y?0.20 and the ratio of the first subcomponent with respect to 100 moles of the main component, which is converted to the metal element in the oxide, is 0.01 mole?first subcomponent<2 moles. According to this dielectric ceramic composition, it is possible to obtain a superior resistance to reduction at the time of firing, obtain a superior capacity-temperature characteristic after firing, and improve the accelerated life of the insulation resistance.