Abstract: The present disclosure generally relates to additive manufacturing systems and methods on a large-scale format. One aspect involves a build unit that can be moved around in three dimensions by a positioning system, building separate portions of a large object. The build unit has an energy directing device that directs, e.g., laser or e-beam irradiation onto a powder layer. In the case of laser irradiation, the build volume may have a gasflow device that provides laminar gas flow to a laminar flow zone above the layer of powder. This allows for efficient removal of the smoke, condensates, and other impurities produced by irradiating the powder (the “gas plume”) without excessively disturbing the powder layer. The build unit may also have a recoater that allows it to selectively deposit particular quantities of powder in specific locations over a work surface to build large, high quality, high precision objects.

Abstract: An integrated circuit has a substrate and an interconnect region disposed on the substrate. The interconnect region includes a plurality of interconnect levels. Each interconnect level includes interconnects in dielectric material. The integrated circuit includes a thermal via in the interconnect region. The thermal via extends vertically in at least one of the interconnect levels in the interconnect region. The thermal via includes a cohered nanoparticle film in which adjacent nanoparticles are cohered to each other. The thermal via has a thermal conductivity higher than dielectric material touching the thermal via. The cohered nanoparticle film is formed by a method which includes an additive process.

Abstract: A SiC film structure capable of providing a sealing structure. A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; and a lid configured to cover the opening.

Abstract: Alpha-Alumina flakes having a particle thickness of 130-400 nm, a D50-value of 15-30 ?m, a D90-value of 30-45 ?m and a D10-value of <9.5 ?m. Use of the alumina flakes in varnishes, paints, automotive coatings printing inks, masterbatches, plastics and cosmetic formulations. Also, use of the alumina flakes as a substrate for effect pigments and in organic dyes.

Abstract: A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction.

Abstract: Provided is a method including obtaining ceramic matrix composite (CMC) with a first matrix portion including a silicon carbide and silicon phase dispersed therewithin, disposing a coating thereupon to form a sealed part, and forming thereupon another segment comprising a CMC, which may be another matrix portion including a silicon carbide and a silicon phase dispersed within therewithin. Also provided is a gas turbine component with a CMC segment including a matrix portion including a silicon carbide and a silicon phase dispersed therewithin, a sealing layer including silicon carbide enclosing the first segment, and a second segment on the sealing layer, wherein the second segment includes a melt-infiltrated CMC having a matrix portion including a silicon carbide and a silicon phase dispersed therewithin.

Abstract: The invention provides a reactor for the manufacture of silicon by chemical vapor deposition (CVD), the reactor comprises a reactor body that can rotate around an axis with the help of a rotation device operatively arranged to the reactor, at least one sidewall that surrounds the reactor body, at least one inlet for reaction gas, at least one outlet for residual gas and at least one heat appliance operatively arranged to the reactor. The reactor is characterized in that during operation for the manufacture of silicon by CVD, the reactor comprises a layer of particles on the inside of at least, one sidewall.

Abstract: A transistor package includes a transistor and one or more bandwidth limiting matching networks. The one or more bandwidth limiting matching networks are coupled to one of a control contact and an output contact of the transistor in order to limit the gain response of the transistor outside of a predetermined frequency band. Specifically, the transistor package has a gain roll-off greater than 0.5 dB within 200 MHz of the predetermined frequency band, while providing signal losses less than 1.0 dB inside the predetermined frequency band at a power level greater than 240 W. By providing the bandwidth limiting matching networks in the transistor package, the gain response of the transistor may be appropriately limited in order to comply with the spectral masking requirements of one or more wireless communications standards, for example, Long Term Evolution (LTE) standards.

Abstract: A method of manufacturing a semiconductor device includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen and which does not contain a borazine ring skeleton, and forming a second film which contains the predetermined element and a borazine ring skeleton. The first film and the second film are laminated to form the laminated film.

Abstract: An installation for fabricating parts by selective melting of powder, the installation including a vessel including a bottom constituted by a movable plate, a mechanism bringing powder into the vessel, and a mechanism generating and moving a laser beam or an electron beam configured to give rise to selective melting of the powder in the vessel. The movable plate includes a tensioning mechanism tensioning in at least one direction parallel its plane.

Abstract: Methods of growing a multilayer graphene film (10) include flowing a weak oxidizing vapor (OV) and a gaseous carbon source (CS) over a surface (SGC) of a carbonizing catalyst (GC) in a CVD reaction chamber (2). Carbon atoms (C) deposit on the carbonizing catalyst surface to form sheets of single-layer graphene (12) upon cooling. The method generates a substantially uniform stacking of graphene layers to form the multilayer graphene film. The multilayer graphene film is substantially uniform and has a relatively large scale as compared to graphene films formed by prior-art methods.

Abstract: Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.

Abstract: The present disclosure generally provides for a solid-state battery, and methods of fabricating embodiments of the solid-state battery. Embodiments of the present disclosure may include an electrode for a solid-state battery, the electrode including: a current collector region including a conductive, lithium electroactive material; and a plurality of nanowires contacting the current collector region.

Abstract: A free-standing non-planar polycrystalline CVD synthetic diamond component which comprises a nucleation face and a growth face, the nucleation face comprising smaller grains than the growth face, the nucleation face having a surface roughness Ra no more than 50 nm, wherein the free-standing non-planar polycrystalline CVD synthetic diamond component has a longest linear dimension when projected onto a plane of no less than 5 mm and is substantially crack free over at least a central region thereof, wherein the central region is at least 70% of a total area of the free-standing non-planar polycrystalline CVD synthetic diamond component, wherein the central region has no cracks which intersect both external major faces of the free-standing non-planar polycrystalline CVD synthetic diamond component and extend greater than 2 mm in length.

Abstract: A method for manufacturing graphene is provided, comprising (1) introducing a supporting substrate in a reactor; (2) preparing (nano) crystalline alumina catalyst having catalytic activity on the supporting substrate to prepare an insulating substrate; (3) growing nano graphenes on the insulating substrate to manufacture graphene film comprising graphene layer of the nano graphenes, which are grown without use of metal catalyst substantially. The graphene layer composed of the nano graphene has spatially homogeneous structural and electrical properties even in synthesis as large area and can be applied to flexible electronic devices. In addition, as it has easy detachment of the substrate and the graphene film and can detach the graphene film without damage of the substrate, leaving no residual graphene on the substrate, it is possible to grow the nano graphene by reusing the substrate.

Abstract: Embodiments of present invention provide a method of forming nano-parts through vacuum coating technology. The method includes creating a set of openings in a substrate, the set of openings having a set of shapes that are complimentary to shapes of a set of nano-parts and the nano-parts having a size between 1 nm and 1000 nm; lining the set of openings with a thin layer of oleic acid of a single molecule thickness; depositing a metal-oxide material inside the set of openings to form the set of nano-parts; immersing the substrate together with the set of nano-parts in a solution; applying a supersonic vibration to the substrate via the solution causing the set of nano-parts to detach from the substrate; and separating the set of nano-parts from the substrate.

Abstract: The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

Abstract: A process for manufacturing graphene film, comprising the controlled growth of graphene film, comprises the following steps: depositing at least one metal layer on the surface of a substrate; and continuously producing a carbon-rich buried region inside said metal layer by bombarding the metal layer with a flux of carbon atoms and/or carbon ions with an energy higher than about a few tens of electron volts so that they penetrate a portion of the metal layer, allowing said carbon-rich region to be created and maintained, so as to form, by diffusion, through said metal layer, a graphene film at the interface of said metal layer with said substrate.

Abstract: A method of producing metal flakes (72?) is provided. The method includes: applying a layer of ionic liquid (70) to a substrate (24); forming a layer of metal (70) on the substrate (24) over the ionic liquid (70); and removing the layer of metal (70) from the substrate (24).

Abstract: Certain example embodiments of this invention relate to methods for large area graphene precipitation onto glass, and associated articles/devices. For example, a coated article including a graphene-inclusive film on a substrate, and/or a method of making the same, is provided. A metal-inclusive catalyst layer (e.g., of or including Ni and/or the like) is disposed on the substrate. The substrate with the catalyst layer thereon is exposed to a precursor gas and a strain-inducing gas at a temperature of no more than 900 degrees C. Graphene is formed and/or allowed to form both over and contacting the catalyst layer, and between the substrate and the catalyst layer, in making the coated article. The catalyst layer, together with graphene formed thereon, is removed, e.g., through excessive strain introduced into the catalyst layer as associated with the graphene formation. Products including such articles, and/or methods of making the same, also are contemplated herein.

Abstract: Provided is a process for producing satisfactory particles held in porous silica. The process comprises (a) the step of preparing porous silica, (b) the step of bringing the porous silica into contact with a liquid which contains either a metal or a compound that has the metal as a component element and infiltrating the liquid into the pores of the porous silica, and (c) the step of subjecting, after the step (b), the impregnated porous silica to a heat treatment to thereby form fine particles comprising the metal or the metal compound in the pores of the porous silica. When porous silica is synthesized by hydrolyzing an alkoxysilane in a solvent-free system, it is possible to synthesize porous silica having a fine pore diameter. Use of this porous silica as a template facilitates formation of particles (e.g., W, Cu, Cr, Mn, Fe, Co, or Ni or an oxide of any of these metals) that show peculiar properties not observed in the bulk material.

Abstract: A substrate assembly includes a first hexagonal boron nitride sheet directly bonded to a surface of a substrate, and a metal layer on the first hexagonal boron nitride sheet.

Abstract: Aspects of the invention are directed to a method for forming a graphene composite structure. Initially, an encapsulating film is formed on a substrate. The encapsulating film comprises graphene. Subsequently, a plurality of particles are deposited on the encapsulating film, and then a temporary layer is deposited on the plurality of active particles and the encapsulating film. The substrate is then removed. Lastly, the temporary layer is also removed so as to cause the plurality of particles to form a cluster that is at least partially encapsulated by the encapsulating film.

Abstract: A porous polymer structure may be formed by cooling a substrate to a temperature at or below a freezing point of a monomer, wherein the monomer is capable of free-radical polymerization; exposing the substrate to an initiator and the monomer, each in a vapor phase, wherein a concentration of the monomer in the vapor phase is above a saturation pressure of the monomer; converting the initiator to a free radical; crystalizing and depositing the monomer on the substrate; and polymerizing at least some of the monomer on the substrate, thereby forming a porous polymer structure on the substrate.

Abstract: A method of producing at least one of microscopic and submicroscopic particles includes providing a template that has a plurality of discrete surface portions, each discrete surface portion having a surface geometry selected to impart a desired geometrical property to a particle while being produced; depositing a constituent material of the at least one of microscopic and submicroscopic particles being produced onto the plurality of discrete surface portions of the template to form at least portions of the particles; separating the at least one of microscopic and submicroscopic particles comprising the constituent material from the template into a fluid material, the particles being separate from each other at respective discrete surface portions of the template; and processing the template for subsequent use in producing additional at least one of microscopic and submicroscopic particles.

Abstract: The invention relates to a carbon-containing nanomaterial comprising, in particular made up as, a network of carbon wall structures which enclose open or closed voids which has a density which can be as low as 0.2 mg per cm3 or lower. The nanomaterial of the invention is made up as a network of carbon wall structures. The carbon wall structures can be tubular, rod-like or in the form of webs or the like which have varying thickness and thus form a network structure, in particular a three-dimensional network structure constructed in the manner of a sponge.

Abstract: The present disclosure relates to multilayered materials that are designed to roll spontaneously into micron-sized, cylindrical “jelly roll” or scroll structures. Specifically in this disclosure, at least one of the layers is comprised of a nanosheet material.

Abstract: The invention relates to a method and a system (10) for forming pressed articles by pressing powder or granules, the system comprising the following apparatuses: a powder discharge assembly (12); a no-cavity press assembly (20) including: an bottom plate (22) that is the same size or greater than the pressed articles, a constraining means to isolate a portion of powder, and a top punch (24); and a conveyor (14) to transport the powder and/or pressed articles.

Abstract: An energetic composite having a plurality of reactive particles each having a reactive multilayer construction formed by successively depositing reactive layers on a rod-shaped substrate having a longitudinal axis, dividing the reactive-layer-deposited rod-shaped substrate into a plurality of substantially uniform longitudinal segments, and removing the rod-shaped substrate from the longitudinal segments, so that the reactive particles have a controlled, substantially uniform, cylindrically curved or otherwise rod-contoured geometry which facilitates handling and improves its packing fraction, while the reactant multilayer construction controls the stability, reactivity and energy density of the energetic composite.

Abstract: Aspects of the invention are directed to a method for forming a graphene composite structure. Initially, an encapsulating film is formed on a substrate. The encapsulating film comprises graphene. Subsequently, a plurality of particles are deposited on the encapsulating film, and then a temporary layer is deposited on the plurality of active particles and the encapsulating film. The substrate is then removed. Lastly, the temporary layer is also removed so as to cause the plurality of particles to form a cluster that is at least partially encapsulated by the encapsulating film.

Abstract: A method for producing an array or bed of metallic nanotubes includes formation of nanowires made from sacrificial material on a growth support, deposition of a metal layer on the nanowires so as to form metallic nanotubes concentric with the nanowires, deposition of a polymer binding layer between the nanowires, elimination of the support, the binding layer supporting the metallic nanotubes, and etching of the sacrificial material.

Abstract: Multilayer substrates for the growth and/or support of CNT arrays are provided. These multilayer substrates both promote the growth of dense vertically aligned CNT arrays and provide excellent adhesion between the CNTs and metal surfaces. Carbon nanotube arrays formed using multilayer substrates, which exhibit high thermal conductivity and excellent durability, are also provided. These arrays can be used as thermal interface materials.

Abstract: A method for forming microscopic 3D structures. In the method according to the invention a substrate (105) is placed in a Scanning Electron Microscope (SEM). The SEM is equipped with a Gas Injection System (GIS) (110) for directing a jet of precursor fluid to the substrate. The substrate is cooled below the freezing point of the precursor gas so that a frozen layer of the precursor gas can be applied to the substrate. By now repeatedly applying a frozen layer of the precursor to the substrate and irradiate the frozen layer with an electron beam (102), a stack of frozen layers (130) is built, each layer showing an irradiated part (131) in which the precursor is converted to another material. After applying the last layer the temperature is raised so that the unprocessed precursor (132) can evaporate. As a result 3D structures with overhanging features can be built.

Abstract: The present invention relates to a freestanding network of carbon nanofibers. The present invention further relates to a method of fabricating a freestanding network of carbon nanofibers. Carbon nanofibers are synthesized glass microballoons that are self-assembled on a silicon wafer.

Abstract: Systems and methods for synthesizing continuous graphene sheets are provided. The systems and methods include passing a catalyst substrate through a heated chemical vapor deposition chamber and exposing the substrate to a reaction gas mixture of hydrogen and hydrocarbon at a preselected location within the chamber. The reaction gas mixture can include hydrogen having a partial pressure of between about 0 Torr and 20 Torr, hydrocarbon having a partial pressure of between about 20 mTorr and about 10 Torr, and one or more buffer gases. The buffer gases can include argon or other noble gases to maintain atmospheric pressure within the chemical deposition chamber. The resulting graphene can be made with continuous mono and multilayers (up to six layers) and have single crystalline hexagonal grains with a preselected nucleation density and domain size for a range of applications.

Abstract: A method for manufacturing a silicon wafer is provided in which a low-temperature thermal process for growing a thermal donor to be a precipitate nucleus of BMD is not needed, a defect-free layer is formed in a surface layer portion even in a short thermal processing time, a BMD density is increased in a bulk portion. A silicon single crystal having a predetermined oxygen concentration and a predetermined nitrogen concentration is grown by Czochralski method in which nitrogen is added in an inert gas atmosphere containing hydrogen gas, by controlling V/G to form a region where a vacancy-type point defect exists, a silicon wafer sliced from the silicon single crystal is subjected to a planarization process and a mirror polish process, and this wafer is subjected to an RTP in an oxidizing gas atmosphere at a maximum achievable temperature from 1250° C. to 1380° C. for 1 second to 60 seconds.

Abstract: A method of producing a first part having at least one surface, formed of a first material. The first part includes at least one coating on the at least one surface. The production method includes: a) taking a second part including a cavity forming the negative of the first part; b) depositing the coating, including at least a first layer, onto the second part; c) taking a first metallic material, chosen for its ability to become at least partially amorphous; d) shaping the first material in the cavity of the second part so as to secure the coating to the at least one surface of the first part, the first material having been subject to a treatment allowing it to become at least partially amorphous, at the latest at the time of the shaping operation; e) separating the first part from the second part so as to obtain the first part coated with the coating.

Abstract: A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network.

Abstract: The present disclosure relates to a method for making a carbon nanotube structure. The method includes steps of providing a tubular carbon nanotube array; selecting a carbon nanotube segment having a predetermined width from the tubular carbon nanotube array using a drawing tool; and drawing the carbon nanotube segment along a radial direction of the tubular carbon nanotube array to achieve the carbon nanotube structure.

Abstract: Provided are a solar cell and a method of fabricating the same. The solar cell may include a first electrode including a first substrate attached with a first transparent conductive film and a metal oxide nanotube provided on the first substrate and adsorbed with a dye, a second electrode facing the first electrode, and an electrolyte filling between the first and second electrodes. In example embodiments, metal nanoparticles may be provided on an inner surface of the metal oxide nanotube.

Abstract: An injection molded product is provided that does not require any separate processes after the injection molding and on a surface of which a beautiful pattern is formed. The injection molded product includes a highly even surface and an irregular minute prominent surface having a profile having an arithmetic mean deviation higher than an arithmetic mean deviation of a profile of the highly even surface, and on which a pattern is formed by a difference in the arithmetic mean deviation of the profile of the highly even surface and of the irregular minute prominent surface.

Abstract: Provided are an active metamaterial device operating at a high speed and a manufacturing method thereof. The active metamaterial device includes a first dielectric layer, a lower electrode disposed on the first dielectric layer, a second dielectric layer disposed on the lower electrode, metamaterial patterns disposed on the second dielectric layer, a couple layer disposed on the metamaterial patterns and the second dielectric layer, a third dielectric layer disposed on the couple layer, and an upper electrode disposed on the third dielectric layer.

Abstract: The main object of the invention is to provide an electromagnetic wave resonator making use of surface waves: an electromagnetic wave resonator structure capable of being achieved with existing technologies yet without much difficulty and applying voltage to a positive dielectric area, thereby overcoming a variety of problems arising from the fact that only thermal excitation is available. The contact structure of negative dielectric/positive dielectric/negative dielectric necessary for this type of electromagnetic wave resonator is provided on the surface of the negative dielectric material 1 just as the coaxial structure of the positive dielectric thin film 3 extending in the Y-axis direction and the negative dielectric material 2 received therein is cut in the axial direction.

Abstract: Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Abstract: A method for producing a pyrolytic boron nitride (PBN) article comprises introducing a nitrogen containing gas and a boron containing gas into a heated reactor furnace under temperature and pressure conditions sufficient to form a PBN deposit and pulsing the flow of the reactant gases between an on and an off state. The method provides a multi-layered PBN article that exhibits a relatively weak bonding interface between adjacent PBN layers to allow for the layers to be peeled away from one another in a controlled manner.

Abstract: A method of forming a multi-layer graphene includes forming a stack of a graphitizing metal catalyst layer and graphene by repeatedly performing a cycle of first forming the graphitizing metal catalyst layer on a substrate, and then forming the graphene on the graphitizing metal catalyst layer, and removing the graphitizing metal catalyst layer.

Abstract: A method of producing uniform multilayer graphene by chemical vapor deposition (CVD) is provided. The method is limited in size only by CVD reaction chamber size and is scalable to produce multilayer graphene films on a wafer scale that have the same number of layers of graphene throughout substantially the entire film. Uniform bilayer graphene may be produced using a method that does not require assembly of independently produced single layer graphene. The method includes a CVD process wherein a reaction gas is flowed in the chamber at a relatively low pressure compared to conventional processes and the temperature in the reaction chamber is thereafter decreased relatively slowly compared to conventional processes. One application for uniform multilayer graphene is transparent conductors. In processes that require multiple transfers of single layer graphene to achieve multilayer graphene structures, the disclosed method can reduce the number of process steps by at least half.

Abstract: The invention relates to a method of fabricating a micromechanical part (11, 31, 41) made of a single piece material. According to the invention, the method includes the following steps: a) forming a substrate (1, 21) which includes the negative cavity (3, 23) for said micromechanical part to be fabricated; b) forming a sacrificial layer (5, 25) on one portion of the substrate (1, 21); c) depositing particles (6, 26) on the substrate (1, 21) intended to form a germination layer; d) removing the sacrificial layer (5, 25) so as to selectively leave one portion of the substrate (1, 21) free of any particles (6, 26); e) depositing a layer of material (7, 27) by chemical vapour phase deposition so that the material is exclusively deposited where the particles (6, 26) remain; f) removing the substrate (1, 21) to release the micromechanical part (11, 31, 41) formed in said negative cavity.

Abstract: A storage container is provided, which includes carbon dioxide containing a functional material and a container body in which carbon dioxide has been hermetically contained. Accordingly, a method for molding a resin, a method for forming a plating film, and the storage container for carbon dioxide, which are excellent in the mass productively at low cost, are provided without using any special high pressure apparatus for producing a supercritical fluid.

Abstract: A process for manufacturing stand-alone thin films is provided. The process includes providing a substrate, depositing a carbon-containing sacrificial layer onto the substrate and the depositing a thin film onto the carbon-containing sacrificial layer. Thereafter, the substrate, carbon-containing sacrificial layer and thin film structure are exposed to oxygen at an elevated temperature. The oxygen reacts with the carbon-containing sacrificial layer to produce carbon dioxide and remove carbon from the sacrificial layer, thereby generally burning away the sacrificial layer and affording for an intact stand-alone thin film to separate from the substrate.