Abstract: An endless track for traction of a vehicle, such as a construction vehicle, an agricultural vehicle, a forestry vehicle or a military vehicle. The endless track has an enhanced elastomeric material curing capability. In one embodiment, each of a plurality of elastomeric projections of the endless track, such as guide/drive projections or traction projections, comprises elastomeric material defining a cavity to enhance a curing process during manufacturing of the endless track. The cavity may be shaped such that, during the curing process, a heat conductor positioned in the cavity conducts heat from the heat conductor to the elastomeric material of the projection.

Abstract: This invention relates to an endless elastomeric traction band that is used to propel tracked vehicles. The traction band generally comprises a main body defining an outer ground-engaging surface and an inner wheel-engaging surface. The outer surface is generally provided with ground-engaging traction lugs. The inner surface of the traction band is preferably provided with one or more row of longitudinally aligned guide lugs and one or more rows of longitudinally aligned drive lugs. Additionally, guide lug reinforcements are inserted into said guide lugs and said band body to laterally reinforce the guide lugs and minimize de-tracking occurrences.

Abstract: This invention relates to an endless elastomeric traction band that is used to propel tracked vehicles. The traction band generally comprises a main body defining an outer ground-engaging surface and an inner wheel-engaging surface. The outer surface is generally provided with ground-engaging traction lugs. The inner surface of the traction band is preferably provided with one or more row of longitudinally aligned guide lugs and one or more rows of longitudinally aligned drive lugs. Additionally, guide lug reinforcements are inserted into said guide lugs and said band body to laterally reinforce the guide lugs and minimize de-tracking occurrences.

Abstract: A semiconductor memory which can secure the stability of data holding characteristics and data read/write characteristics for a tunnel diode having a small peak/valley ratio, and to provide a method for manufacturing such a semiconductor memory. The peak/valley ratio of a tunnel diode can be improved by arranging a tunnel insulating film on the bottom portion of the ground direct contact forming the tunnel diode; the resistance of high resistance load can further be increased by arranging a tunnel insulating film on the bottom portion of the storage node direct contact; and data holding characteristics can be improved while controlling the column current by setting the power voltage impressed to the high resistance load higher than the power voltage impressed to the bit line.