Abstract: Amorphous silicon carbide may be doped with one or more ions such as vanadium and these ions may radiate light if excited, for example, using optical or electrical pumping. A single photon light source may be formed from a single such ion that is pumped or from a plurality of ions that are pumped if light from only one ion is collected, e.g., using an aperture or pin hole. Such single photon sources may possibly be use in quantum computing, quantum sensing and/or quantum telecommunications.

Abstract: Embodiments of the present disclosure are directed to a display panel and a display device. The first fan-out wire in a first area is designed as a first portion of the first metallic layer and a second portion of a second metallic layer. The first portion of the first metallic layer is coupled to the second portion of the second metallic layer. The width of the first fan-out wire in the first area is less than the width of the fan-out wires in other areas. The distance between the first fan-out wires in the first area is less than the distance between the first fan-out wires in the other areas. While the impedance of the first fan-out wire is not increased or even reduced, the space occupied by the first fan-out wire is reduced.

Abstract: A field emission cathode device and formation method involves a rotating field emission cathode including a field emission material deposited on a surface thereof, the field emission cathode rotating about an axis and being electrically connected to ground, and a planar gate electrode extending parallel to the surface of the rotating field emission cathode and defining a gap therebetween. A gate voltage source is electrically connected to the gate electrode and is arranged to interact therewith to generate an electric field, with the electric field inducing a portion of the surface of the rotating field emission cathode adjacent to the gate electrode to emit electrons from the field emission material toward and through the gate electrode.

Abstract: In a cylindrical guard electrode (5) provided on the outer peripheral side of an electron generation part (31) of an emitter (3), a distal end section (5A) 5 positioned in the emission direction of an electron beam (L1) from the electron generation part (31) includes: a distal end inner-peripheral-side part (A1) having an inner-peripheral-side curved surface portion (a1) convex in the emission direction; a distal end outer-peripheral-side part (A2) having an outer-peripheral-side curved portion (a2) convex in the emission direction; and a 10 distal end middle part (A3) positioned between the distal end inner-peripheral-side (A1) and the distal end outer-peripheral-side part (A2). The distal end middle part (A3) has a flat surface portion (a3) between the inner-peripheral-surface portion (a1) and the outer-peripheral-side curved surface portion (a2) so as to extend in the direction therebetween.

Abstract: An electron source has an insulating base, a pair of conductive terminals, an insulating support member, a drift isolation member, an emitter-cathode, and one or more heating elements. The conductive terminals are exposed from a first surface of the insulating base. The insulating support member extends from the first surface of the insulating base. The drift isolation member is disposed at an end of the insulating support member remote from the insulating base. The emitter-cathode is coupled to the drift isolation member. The one or more heating elements are coupled to the conductive terminals and the drift isolation member. The combination of the drift isolation member with the insulating support member can prevent stress-induced drift from impacting position of the emitter-cathode, thereby improving the mechanical stability of the electron source.

Abstract: A method of manufacturing a microelectromechanical system includes forming of an electromechanical element on a substrate. The method further includes preparation of an encapsulation package to form a sealed cavity integrating the electromechanical element, with the sealed cavity having a volume smaller than 10 mm3. The method includes physical vapor deposition of a getter film on the substrate or on a wall of the encapsulation package so that the getter film has a specific absorption surface area smaller than 8 m2/g, and sealing of the encapsulation package on the substrate by means of a thermal sealing cycle having a temperature enabling to activate said getter film.

Abstract: A thermal field emitter, an apparatus, and a method for generating multiple beams for an e-beam tool are provided. The thermal field emitter includes an electron emitting portion configured to emit an electron beam and a nano-aperture array (NAA) having a plurality of openings. The NAA is positioned in a path of the electron beam. The NAA is configured to form multiple beams. The multiple beams include electrons from the electron beam that pass through the plurality of openings.

Abstract: The present disclosure provides an image sensor panel (ISP) and a method for fabricating the image sensor panel (ISP). In one aspect, the method includes forming a well in an assembly, forming a bottom electrode in the well, forming a photosensitive layer in the well, and forming a top electrode over the photosensitive layer.

Abstract: An imaging device includes: a sensor to detect a first target spectrum, the first target spectrum corresponding to a thermal imaging region of an infrared (IR) spectrum; and an optical device to transmit external light to the sensor, the optical device including: a substrate; and a plurality of nanostructures on the substrate, and to collimate at least the first target spectrum in the external light on the sensor. The plurality of nanostructures are spaced apart from each other, and at least one of the plurality of nanostructures has a different geometric size from that of another.

Abstract: A thermionic emission device comprises a first electrode, a second electrode, a single carbon nanotube, an insulating layer and a gate electrode. The gate electrode is located on a first surface of the insulating layer. The first electrode and the second electrode are located on a second surface of the insulating layer and spaced apart from each other. The carbon nanotube comprises a first end, a second end opposite to the first end, and a middle portion located between the first end and the second end. The first end of the carbon nanotube is electrically connected to the first electrode, and the second end of the carbon nanotube is electrically connected to the second electrode.

Abstract: The present disclosure relates to methods of fabricating a porous structure, such as a porous silicon carbide structure. The methods can include a step of providing a structure to be rendered porous, and a step of providing an etching solution. The methods can also include a step of electrochemically etching the structure to produce pores through at least a region of the structure, resulting in the formation of a porous structure. The morphology of the porous structure can be controlled by one or more parameters of the electrochemical etching process, such as the strength of the etching solution and/or the applied voltage.

Abstract: An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.

Abstract: Vacuum electron devices and linear accelerators include a hollow cathode configured to emit a beam of electrons. An anode is configured to attach and focus the beam of electrons. A control grid is configured to control the beam of electrons emitted from the hollow cathode. A cylinder is positioned substantially coaxial with the hollow cathode and is configured to maintain a shape and trajectory of the emitted beam of electrons.

Abstract: A process of forming and the resulting nano-pitted metal substrate that serves both as patterns to grow nanostructured materials and as current collectors for the resulting nanostructured material is disclosed herein. The nano-pitted substrate can be fabricated from any suitable conductive material that allows nanostructured electrodes to be grown directly on the substrate.

Abstract: An apparatus for fabricating a thin film is provided. The apparatus includes a tube including one end and another end, a first heater supplying heat to a first region, adjacent to the one end, of the tube, a second heater supplying heat to a second region, adjacent to the another end, of the tube and disposed in parallel to the first heater along the tube, a gas inlet through which a source gas is supplied to the one end of the tube, and a gas outlet through which the source gas is exhausted from the another end of the tube.

Abstract: A method for preparing a topographically structured hydrogel microarray is described comprising the steps of a) providing one or more types of biomolecule(s) on top of micropillars of an array of micropillars, preferably by means of robotical spotting, b) providing a partially crosslinked hydrogel on a substrate, preferably attached to a substantially rigid and/or planar substrate, c) simultaneously soft-embossing a hydrogel microwell array and transferring the biomolecule(s) from the micropillars to the microwells by pressing the micropillars of the array of step a) onto the partially crosslinked layer of hydrogel of step b) until substantial completion of crosslinking and d) demolding the array of micropillars of step a) from the hydrogel microwell array of step c).

Abstract: A method of growing carbon nanotubes is related. A reactor is provided. The reactor includes a reactor chamber and a carbon nanotube catalyst composite layer suspended in the reactor chamber. The carbon nanotube catalyst composite layer includes a carbon nanotube layer and a number of catalyst particles dispersed in the carbon nanotube layer. A mixture of carbon source gas and carrier gas is introduced into the reactor chamber to penetrate the carbon nanotube catalyst composite layer. The carbon nanotube catalyst composite layer is heated.

Abstract: Methods for reading and programming one or more resistive change elements within a 1-R resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. These methods also include programming methods wherein selectable current limiting elements are used to permit or inhibit programming currents from flowing through selected and unselected cells, respectively. These methods further include programming methods that use specific biasing of array lines to provide sufficient programming currents through only selected cells.

Abstract: The present invention relates to carbon materials comprising carbon nanotubes, powders comprising carbon nanotubes and methods of making carbon nanotubes. In the methods of the present invention, the size and/or formation of floating catalyst particles is closely controlled. The resulting carbon nanotubes typically exhibit armchair chirality and typically have metallic properties. The carbon nanotubes produced by this method readily form bulk materials, which typically have a conductivity of at least 0.7×106 Sm?1 in at least one direction. The invention has particular application to the manufacture of components such as electrical conductors. Suitable electrical conductors include wires (e.g. for electrical motors) and cables (e.g. for transmitting electrical power).

Abstract: A flat emitter configured for use in an X-ray tube is presented. The X-ray tube includes a first conductive section including a first terminal. Further, the X-ray tube includes a second conductive section including a second terminal. Also, the X-ray tube includes a third conductive section disposed between the first conductive section and the second conductive section, wherein the third conductive section is configured to emit electrons toward a determined focal spot, and wherein the third conductive section includes a plurality of slits subdividing the third conductive section into a winding track coupled to the first conductive section and the second conductive section, wherein at least two of the plurality of slits are interwound spirally to compose the winding track, and wherein the winding track is configured to expand and contract based on heat provided to the third conductive section.

Abstract: A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.

Abstract: A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.

Abstract: A display device includes a plurality of pixel electrodes which are provided separately from each other on an insulative surface; a first layer which is provided separately from each other on the respective plurality of pixel electrodes, and includes a plurality of first carrier transport layers or a plurality of first carrier injection layers; a pixel separation film which is provided on the first layer, and includes a plurality of opening portions in each region which overlaps with the respective plurality of pixel electrodes in a planar view; a light emitting layer which is provided so as to cover at least one of the plurality of opening portions; a second layer which is provided on the light emitting layer, and includes a second carrier transport layer or a second carrier injection layer; and a counter electrode which is provided on the second layer.

Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

Abstract: A display device includes a reflecting layer. A display device according to an exemplary embodiment of the present invention includes: a lower substrate; an upper substrate facing the lower substrate; a thin film transistor on the lower substrate; and a first reflecting layer on a first surface of the upper substrate, the first surface facing the lower substrate, in which the lower substrate and the upper substrate include a display area for displaying an image, and a peripheral area outside the display area, and wherein the first reflecting layer is at the peripheral area, at display area, and at an area adjacent an edge of the upper substrate.

Abstract: A reactor includes a reactor chamber and a carbon nanotube catalyst composite layer. The reactor chamber has an inlet and an outlet. The carbon nanotube catalyst composite layer is suspended in the reactor chamber, wherein the carbon nanotube catalyst composite layer defines a number of apertures, gases in the reactor chamber penetrate the carbon nanotube catalyst composite layer through the plurality of apertures.

Abstract: Provided are a field emission device and a method of manufacturing the same. The field emission device includes an anode electrode and a cathode electrode which are opposite to each other, a counter layer provided on the anode electrode, and a field emitter provided on the cathode electrode and facing the counter layer. Herein, the field emitter includes a carbon nanotube emitting cold electrons and a photoelectric material emitting photo electrons.

Abstract: A carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate.

Abstract: A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric.

Abstract: An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an electron collection layer, an insulating layer, and a second electrode stacked with each other, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer.

Abstract: A method for fabricating an organic light emitting display device includes forming a first electrode on a substrate; forming a pixel-defining film having an opening exposing the first electrode; forming an ink non-reactive solvent portion by discharging of an ink non-reactive solvent at the opening and forming an organic light emitting layer by discharging an organic light emitting ink on the ink non-reactive solvent portion; and forming a second electrode on the organic light emitting layer.

Abstract: A thin film encapsulation unit including an inorganic layer, a first organic layer on the inorganic layer and including a light-blocking unit and a light-transmitting unit, and a reflection-preventing layer on the first organic layer.

Abstract: Devices and methods are described for a cathode having a plurality of apertures in an insulating layer, pits in a substrate layer, and emitters in the pit. The device can also have gate layer on top of the insulating layer which has an opening that is substantially aligned with the pit and the aperture. The emitter can be an array of substantially aligned carbon nanotubes. The device and method produces cathodes that are designed to avoid shorting of the cathode due to emitter-gate contact and other fabrication challenges.

Abstract: Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from alloys of transition metals. Some examples of such alloys include chromium containing alloys that may also include nickel, aluminum, and/or silicon. Other examples include tantalum and/or titanium containing alloys that may also include a combination of silicon and carbon or a combination of aluminum and nitrogen. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature processing. In some embodiments, the breakdown voltage of a current limiting layer is at least about 8V. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layers while maintaining their performance.

Abstract: An electron emission element (1) includes an electrode substrate (2) and a thin film electrode (3), and emits electrons from the thin film electrode (3) by voltage application across the electrode substrate (2) and the thin film electrode (3). An electron accelerating layer (4) containing at least insulating fine particles (5) is provided between the electrode substrate (2) and the thin film electrode (3). The electrode substrate (2) has a convexoconcave surface. The thin film electrode (3) has openings (6) above convex parts of the electrode substrate (2).

Abstract: A highly durable cathode component for a discharge lamp is provided. A cathode component for a discharge lamp includes a barrel having a wire diameter of 2 to 35 mm and a tapered front end, wherein the cathode component comprises a tungsten alloy containing 0.5 to 3% by weight, in terms of oxide (ThO2), of a thorium component, not less than 90% of tungsten crystals are accounted for by tungsten crystals having a grain size in the range of 1 to 80 ?m, as observed in terms of an area ratio of 300 ?m×300 ?m in unit area in a circumferential cross section of the barrel, and are accounted for by tungsten crystals having a grain size in the range of 10 to 120 ?m, as observed in terms of an area ratio of 300 ?m×300 ?m in unit area in a side cross section of the barrel.

Abstract: A thermionic emission assembly includes a Wehnelt cap that has a cap beam aperture and a cavity within which a cathode is supported. Electrical energy applied to the cathode causes it to reach a sufficiently high temperature to emit a beam of electrons that propagate through the cap beam aperture. An anode having an anode beam aperture is positioned in spatial alignment with the cap beam aperture to receive the electrons. The anode accelerates the electrons and directs them through the anode beam aperture for incidence on a target specimen. A ceramic base forms a combined interface that electrically and thermally separates the Wehnelt cap and the anode. The thermal isolation of the Wehnelt cap from the anode allows the Wehnelt cap to increase in heat to rapidly reach a stable temperature as the cathode emits the beam of electrons.

Abstract: A field emission device comprises one or more emitter elements, each having a high aspect ratio structure with a nanometer scaled cross section; and one or more segmented electrodes, each surrounding one of the one or more emitters. Each of the one or more segmented electrodes has multiple electrode plates. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Wire-suspended thermionic cathodes provide lower power, further reduction in size, better stability and accuracy, and higher loading then conventional art. The cathodes are too small for use with conventional heaters and so are heated from behind by an electron beam or an intense light beam, such as laser light transmitted via optical fiber to the back of the cathode. The cathodes are electrically isolated from the focus electrode, thus allowing beam cutoff and modulation.

Abstract: A highly durable cathode component for a discharge lamp is provided. A cathode component for a discharge lamp includes a barrel having a wire diameter of 2 to 35 mm and a tapered front end, wherein the cathode component comprises a tungsten alloy containing 0.5 to 3% by weight, in terms of oxide (ThO2), of a thorium component, not less than 90% of tungsten crystals are accounted for by tungsten crystals having a grain size in the range of 1 to 80 ?m, as observed in terms of an area ratio of 300 ?m×300 ?m in unit area in a circumferential cross section of the barrel, and are accounted for by tungsten crystals having a grain size in the range of 10 to 120 ?m, as observed in terms of an area ratio of 300 ?m×300 ?m in unit area in a side cross section of the barrel.

Abstract: A metal hexaboride nanowire such as LaB6 with the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very short time period, and the output current greatly decreases when used under low temperature. The cold field emitter of the present invention overcomes this problem with a stabilization process that exposes the metal-terminated (100) plane of the tip to hydrogen at low temperature, and can stably operate over extended time periods.

Abstract: A light-emitting device includes: a package; a semiconductor light-emitting element mounted above the package; a cap component provided above the package; a sealing component which seals a space between the package and the cap component; and a phosphor containing resin including phosphor disposed in the sealed space.

Abstract: A carbon nanotube field emitter is disclosed. The carbon nanotube field emitter includes an emission portion and a supporting portion. The emission portion and the supporting portion are configured as one piece to form a roll structure. The emission portion includes a first rolled carbon nanotube layer, which includes a number of carbon nanotubes. The supporting portion includes a rolled composite layer, which includes at least one second rolled carbon nanotube layer and a rolled metal layer stacked with each other. Another carbon nanotube field emitter with a number of separated emission tips on the emission portion is also disclosed.

Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.

Abstract: A field emission electron source includes a carbon nanotube micro-tip structure. The carbon nanotube micro-tip structure includes an insulating substrate and a patterned carbon nanotube film structure. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. Each of the two strip-shaped arms includes a plurality of carbon nanotubes parallel to the surface of the insulating substrate. A field emission device is also disclosed.

Abstract: The present application relates to a method for making a carbon nanotube field emitter. A carbon nanotube film is drawn from the carbon nanotube array by a drawing tool. The carbon nanotube film includes a triangle region. A portion of the carbon nanotube film closed to the drawing tool is treated into a carbon nanotube wire including a vertex of the triangle region. The triangle region is cut from the carbon nanotube film by a laser beam along a cutting line. A distance between the vertex of the triangle region and the cutting line can be in a range from about 10 microns to about 5 millimeters.

Abstract: This invention relates to a filament for electron emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source. Embodiments of the present invention discloses method with which a Re (Rhenium) is used as heat source such that vibration issue of prior tungsten filament can be depressed.

Abstract: A light emitting diode (LED) based lamp is provided that may include a housing, a LED module having at least one LED to emit light, and a lens to receive the light from the LED and to guide the light to a specific area. An outer circumference of the lens may have a different surface roughness than an inner surface of the lens or may have a different light transmissivity than the inner surface of the lens. The outer circumference of the lens may minimize light from being transmitted to a region outside the specific area.

Abstract: Increasing the volume or weight of zirconia which is a diffusion and supply source, to extend the life of a field-emission type electron source causes a problem that the diffusion and supply source itself or a tungsten needle is easily subjected to damage. As another problem, although it is considered to form the diffusion and supply source using a thin film to avoid the above-described problem, it is difficult to stably obtain practical life exceeding 8,000 hours. It has been found that practical life exceeding 8,000 hours is stably obtained by providing a field-emission type electron source that has no chips or cracks in a diffusion and supply source and that can extend life with a little bit of an increase in the amount of the diffusion and supply source.

Abstract: Photon Enhanced Thermionic Emission (PETE) is exploited to provide improved efficiency for radiant energy conversion. A hot (greater than 200° C.) semiconductor cathode is illuminated such that it emits electrons. Because the cathode is hot, significantly more electrons are emitted than would be emitted from a room temperature (or colder) cathode under the same illumination conditions. As a result of this increased electron emission, the energy conversion efficiency can be significantly increased relative to a conventional photovoltaic device. In PETE, the cathode electrons can be (and typically are) thermalized with respect to the cathode. As a result, PETE does not rely on emission of non-thermalized electrons, and is significantly easier to implement than hot-carrier emission approaches.