Abstract: A power supply device includes a main body defining a receiving cavity which has an opening, a battery and a metallic plate both disposed in the receiving cavity, a metallic ring mounted around the opening, and a cover disposed at the opening. The metallic ring is positioned between the cover and the main body and heated by the high-frequency heating for fusion of the cover and the main body to seal up the battery in the receiving cavity. The metallic plate is located between the battery and acting parts by the high-frequency heating to separate the energy of the high-frequency heating from the battery. The main body or the cover are provided with a connecting element of which one end is exposed in the receiving cavity to electrically connect the battery and the other end is exposed outside the power supply device to electrically connect an external electronic product.

Abstract: The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on the upper layer of a substrate. An electron emitting layer is formed on the upper layer of the light absorbing layer. A contact layer having a striped-shape is formed on the upper layer of the electron emitting layer. A surface electrode composed of metal is formed on the surface of the contact layer. The interval between bars in the contact layer is adjusted so as to become 0.2 ?m or more but 2 ?m or less.

Abstract: A semiconductor sensor for direct detection of electrons has a pixel structure in which a capacitance is designed to each pixel that stores a charge and converts the charge into a readable voltage. A conductive layer substantially covers the pixel structure. The conductive layer includes pixel surface coatings, each of which cover an individual pixel. Each pixel surface coating is separated from each adjoining pixel surface coating by a gap. A second conductive layer covers a surface of the gap. An insulation insulates the pixel surface coating from the second conductive layer. The conductive layers may be metal or other conductive, light impervious materials. The second conductive layer may include a capacitor electrode.

Abstract: A flat panel x-ray imager includes a gain layer (charge multiplication layer) that facilitates imaging at low x-ray exposure levels. The gain layer can be a gas chamber or a solid state material operating in an avalanche mode.

Abstract: An electron-emitting apparatus is constituted by an electron-emitting device having an electroconductive film including electron-emitting portions, and an electrode for attracting electrons. An electrically insulated elongated region is formed in the electroconductive film to divide the film into a higher potential side and a lower potential side. The insulated region has a substantially periodical shape formed of portions projecting to the higher potential side and portions projecting to the lower potential side. Continuous electron-emitting portions are present at at least part of the portion projecting to the higher potential side in one period of the insulated region.

Abstract: An x-ray image intensifier includes a photoconductive x-ray detector having an electro-optic light modulator disposed on a photoconductive detector layer. The photoconductive x-ray detector absorbs x-rays passing through an object to be imaged to form an x-ray exposure of the object. An optical image of the x-ray exposure is generated when light passes through the photoconductive x-ray detector. An imager captures optical images of the x-ray exposure. A processor coupled to the imager digitizes and stores the optical images of the x-ray exposure captured by the imager at selected intervals.

Abstract: The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.

Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface.

Abstract: The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.

Abstract: An imaging device comprising a vacuum vessel, an electron source arranged in the vessel and a solid-state image sensor arranged to receive signal electrons emitted from the electron source. The solid-state image sensor comprises a charge transferring device, picture element electrodes, an electron multiplier layer, and a surface electrode layer. The picture element electrodes are connected to the charge transferring device and cover the major part of this device. The surface electrode layer and the electron multiplier layer are stacked on the picture element electrodes. The surface electrode layer formed on the electron multiplier layer transmits the incident signal electrons to the electron multiplier layer.

Abstract: An improved image sensor made of photosensitive semiconductor materials with a number of pixels each including an n-type semiconductor layer, a p-type semiconductor layer and an intrinsic semiconductor layer disposed between the n-type and p-type layers. The n-type and p-type layers are made from a semiconductor material having a high resistivity. The high resistivity of the n-type layer and the p-type layer functions to prevent crosstalk currents from passing between the pixels.

Abstract: An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.

Abstract: An imaging device includes a wafer of single crystal semiconductor material having a first surface with an input surfacing region which extends into the wafer from the first surface and a second surface with a charge storage portion which includes a plurality of discrete charge storing regions which extend into the wafer of the second surface. The wafer includes a potential barrier within the input signal sensing portion for controlling blooming. The wafer is improved by including a passivation region within the input sensing portion for stabilizing the energy level of the conductivity band of the minority carriers at the Fermi energy level of the semiconductor wafer. Additionally, an electrical leakage reduction region extends into the wafer from the second surface. The leakage reduction region is contiguous with each of the discrete charge storage regions.

Abstract: Color filter arrays for color imaging devices are disclosed. The arrays are formed in a single layer of a transparent binder containing at least one cationic photo-bleachable dye. The layer has a thickness less than 10 microns, and the dye is present in the layer in an amount sufficient to impart a density to the layer of at least about 0.5 in that portion of the spectrum in which it selectively absorbs. A method of making the arrays is also disclosed which includes the steps of (1) forming a layer of a transparent binder containing the photo-bleachable dye or dyes and a sensitizer; (2) exposing the layer to a pattern which represents a set of filter elements so as to photo-bleach the photo-bleachable dye; and (3) fixing the layer by leaching the sensitizer from the layer. In particularly preferred embodiments, the dyes are chosen so that those which absorb at longer wavelengths have a lower bleaching efficiency than those which absorb at shorter wavelengths.

Abstract: A target for vidicons and image intensifier tubes include a potential barrier less than about 1500 A from an input signal sensing surface. The targets also include various passivation means for stabilizing the energy level configuration along the input signal sensing surface by substantially fixing the valence or conduction band along that surface relative to the Fermi level.

Abstract: The invention provides a thermal camera tube having a reticulated pyroelectric target, that is to say a target having a plurality of separate pyroelectric elements arranged in rows and columns and separated by channels. Each of the separate elements has the shape of a cube the vertical sides of which are inclined so that, except for those in one outer column and one outer row, on two of its sides the top of each element overhangs the base of an adjacent element in the same row and the base on an adjacent element in the same column so that the overhanging surface of the element is exposed to radiation in the region of channels separating it from the aforementioned adjacent elements.

Abstract: A television camera tube having a semiconductor target which on the side to be scanned by an electron beam comprises a mosaic of electrically conductive regions each determining a picture element and separated from the semiconductor plate by an electrically insulating layer, and a resistive layer extending over the mosaic and the insulating layer which contacts the semiconductor surface via an aperture in the insulating layer present in each picture element and has a RC time between the scanning time of a picture element and the scanning time of the whole target.

Abstract: A method is provided for manufacturing lead-tin-telluride photodiode arrays which is simple and yet provides excellent yields of high performance devices.

Abstract: A television camera tube having a discrete structure of photosensitive elements provided on an electrically conductive carrier covered entirely with photoconductive material or another resistance material, so that with a suitable potential applied to the carrier a potential distribution occurs having successive saddle points for the scanning beam. Variation and exposure of the discrete photoconductive elements then results in a variation in beam splitting in the saddle points, as a result of which the tube has a greater or smaller extent of natural amplification.The invention relates to a television camera tube having a target which is to be scanned by an electron beam and which comprises a transparent electrically conductive signal electrode and discrete structure of photosensitive elements provided on an electrically conductive carrier.Such a camera tube is known from the U.S. Pat. No.

Abstract: A low capacitance high speed signal storage plate for a signal storage tube with a raster of insulating areas of 1 .mu.m or greater thickness, and process for producing same. The insulating areas may be individual islands on a conductive plate, islands supported by projections extending from the plate, an integral layer supported by such projections, or islands carried on doped portions of a semiconductive plate.

Abstract: A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.

Abstract: The photoelectric surface of a photocathode made of a semiconductor single crystal is made minutely rough and, accordingly, lusterless, so that the transmissivity of a polarized light beam incident on the photoelectric surface is almost unaffected by the direction of electric field vector of the beam.

Abstract: A semiconductor structure having a surface insulating layer formed as a grid with charges implanted in the insulating material to prevent inversion and, hence, channeling between adjacent semiconductor regions, preferably for use in a nonblooming vidicon. The method of manufacturing such a structure uses ion implantation to create immobile positive charges in a grid pattern in an insulating layer in regions spaced from the interface between the insulating layer and the semiconductor body. The insulating layer is of sufficient thickness that substantially all of the charge sites in the insulating layer are separated from the outer surface of the insulator by a sufficient distance to effectively prevent a negative electric field from reaching into the silicon.

Abstract: A charge storage device of the type in which a target electrode provides a plurality of spatially distributed charge storage sites formed on an output side of a semiconductor wafer with means associated with the storage sites for sensing and converting the charge on the storage sites into an electrical signal. Input excitation is directed onto the other or input side of the semiconductor wafer and may be in the form of electrons or light capable of generating electron-hole pairs within the semiconductor wafer which diffuse through to the storage sites. The output side of the semiconductor wafer is provided with an apertured insulating layer with a reading electron beam making contact through the apertures in the insulating coating to the spatially distributed storage sites.