Abstract: A MgF2—CaF2 binary system sintered body for a radiation moderator having a compact polycrystalline structure excellent in radiation moderation performance, especially neutron moderation performance, comprises MgF2 containing CaF2 from 0.2% by weight to 90% by weight inclusive, having a bulk density of 2.96 g/cm3 or more, and a bending strength of 15 MPa or more and a Vickers hardness of 90 or more as regards mechanical strengths.

Abstract: A field emission device comprises one or more emitter elements, each having a high aspect ratio structure with a nanometer scaled cross section; and one or more segmented electrodes, each surrounding one of the one or more emitters. Each of the one or more segmented electrodes has multiple electrode plates. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode and composed of insulating fine particles; and a second electrode formed on the insulating fine particle layer, wherein the insulating fine particles are monodisperse fine particles, and when voltage is applied between the first electrode and the second electrode, electrons are discharged from the first electrode into the insulating fine particle layer and accelerated through the insulating fine particle layer to be emitted from the second electrode.

Abstract: The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode and composed of insulating fine particles; and a second electrode formed on the insulating fine particle layer, wherein the insulating fine particles are monodisperse fine particles, and when voltage is applied between the first electrode and the second electrode, electrons are discharged from the first electrode into the insulating fine particle layer and accelerated through the insulating fine particle layer to be emitted from the second electrode.

Abstract: A method of producing a porous thin-film-deposition substrate, which has the steps of: placing onto a substrate that has an electrostatic charge on its surface, fine particles with a surface electrostatic charge opposite to the electrostatic charge of the substrate surface, depositing a thin film on the fine-particle-placed substrate, and then removing the fine particles to form fine pores in the thin film; further, a method of producing an electron emitting element, which has the steps of: adding a catalyst metal on a substrate, placing fine particles onto the catalyst-added substrate, depositing a thin film on the fine-particle-placed substrate, then removing the fine particles to form fine pores in the film, and growing needle-shaped conductors on the catalyst metal that is exposed on a bottom face of the fine pore.

Abstract: The invention includes a microchannel plate for an image intensifier tube, in which the plate has multiple microchannels extending in a longitudinal dimension between transverse surfaces of the plate. Each microchannel includes a first portion forming a first opening at an end proximate a surface of the plate. The first portion includes a wall extending longitudinally from the surface and terminating in a substantially similar first opening at a distal end. The microchannel also includes a second portion of the wall, extending longitudinally from the first opening at the distal end and tapering toward a second opening at a further distal end. The first opening at the proximate end has a diameter that is substantially similar to a diameter of the first opening at the distal end. The first opening is also wider than the second opening.

Abstract: A diamond transmission dynode and photocathode are described which include a thin layer of a crystalline semiconductive material. The semiconductive material is preferably textured with a (100) orientation. Metallic electrodes are formed on the input and output surfaces of the semiconductive material so that a bias potential can be applied to enhance electron transport through the semiconductive material. An imaging device and a photomultiplier utilizing the aforesaid transmission dynode and/or photocathode are also described.

Abstract: The photocathode according to this invention is characterized in that an aluminium thin film is formed on a substrate, and then an antimony thin layer is deposited directly on the aluminium thin film and is activated by an alkali metal. It is especially preferable that the antimony thin layer is deposited in a thickness of 15 .mu.g/cm.sup.2 to 45 .mu.g/cm.sup.2 and is activated by an alkali metal. Such reflection-type photocathode is applicable to photomultipliers. Among functions which are considered to be done by the Al film. which is in direct contact with the Sb layer, a first one is to prevent the alloying between the Sb layer and the substrate (e.g., Ni), and a second one is to augment a reflectance of light to be detected.

Abstract: Shock resistant microchannel plate assemblies incorporating stacked or cascaded microchannel plates, and to methods of their use are disclosed. High-output amplification tubes of the photomultiplier type, or of the image intensifier type, having a plurality of sequentially arranged, or cascaded, electron multiplier microchannel plates are also disclosed. More particularly the present invention relates to a high output photomultiplier tube or image tube having cascaded microchannel plates radially constrained by an annular insulating ring. In another aspect of the present invention image intensifier tubes or photomultiplier tubes may include a tapered ceramic high voltage stand-off. Moreover, a method of making such tubes is also disclosed.

Abstract: A cathode for photoelectric emission or a cathode for secondary electron emission comprises a thin film made of a material which emits photoelectrons by an incident light or emits secondary electrons by an electron input on a base substrate. The average particle size of the particles forming the thin film is 200 nm to 2000 nm. It is preferred that the average particle size is nearly equal to an average diffusion length of the particle of an excited electron. Further, the average particle size is preferably larger than the mean value of penetration lengths of inputted electrons or incident lights in the particles. Moreover, preferably convexities and/or concavities formed of particles each having the average particle size are formed over the surface of a plane for the incident light or electron input. Further, it is preferred that the thin film is activated by an alkali metal and is made of compounds of at least one kind of alkali metal and an antimony metal.

Abstract: An imaging device comprising a vacuum vessel, an electron source arranged in the vessel and a solid-state image sensor arranged to receive signal electrons emitted from the electron source. The solid-state image sensor comprises a charge transferring device, picture element electrodes, an electron multiplier layer, and a surface electrode layer. The picture element electrodes are connected to the charge transferring device and cover the major part of this device. The surface electrode layer and the electron multiplier layer are stacked on the picture element electrodes. The surface electrode layer formed on the electron multiplier layer transmits the incident signal electrons to the electron multiplier layer.

Abstract: A CRT having a glass faceplate for forming an image display surface and a metal funnel connected to a peripheral part of the faceplate and forming a side wall. The glass faceplate has a phosphor screen coated on the inside surface and a metal film covering the phosphor screen. A high voltage of 25 KV is applied to the metal film, while the metal funnel is grounded. An insulating layer covers adjacent inside areas of the funnel and faceplate, thereby increasing the distance between the metal film and exposed surfaces of the funnel and preventing creeping discharges.

Abstract: A method of manufacturing a camera tube having structure suitable for the HN system comprising a glass faceplate covered by an n-type transparent electrode layer consisting of, for instance, Nesa glass on which a thin p.sup.+ -type layer, a p-type layer and an n-type layer are deposited in succession to form a photoconductive layer on which a block layer is deposited to form a protected photoconductive target. A metal mesh covered by an insulation material and a collector electrode for collecting secondary electrons emitted from the target are arranged on the electron beam scanning side of the target.

Abstract: A secondary electron multiplication target includes first and second porous layers laminated on a signal electrode. The first porous layer is formed of MgF.sub.2 which, having a high secondary electron emitting ratio and a dielectric constant of 6 or less, produces a great number of secondary electrons in response to photoelectrons incident thereupon across the signal electrode. The second porous layer is formed of carbon which has a low secondary electron emitting ratio and hence a high crossover potential, as well as a dielectric constant of 6 or less.

Abstract: A secondary electron multiplication target for a secondary electron conduction type which comprises a conductive support layer and a secondary electron emitting layer deposited on the support layer. This secondary electron emitting layer is a porous layer consisting of fine particles of a humidity proof substance having higher melting point and electric resistance than MgO, for example, MgF.sub.2. This porous layer consists mainly of primary particles each having an average particle size of scores of angstroms to five hundred angstroms.

Abstract: A superorthicon-type television camera tube with a photoelectric cathode, a target spaced opposite the cathode and including a film and a fine mesh grid arranged between the film and the cathode. A coating is provided on both the grid and the film and is constituted of a semiconductor material having an inelastic electron reflection factor lower than that of the material of the target. The coating of semiconductor material is on the film and on the grid on the side facing the cathode.