Abstract: To provide an organic electroluminescent element that can attain efficiency improvement by forming an electron injection layer by a film that is stable and excellent in uniformity, and forming a charge generation layer capable of effectively exhibiting the function. In an organic electroluminescent element provided with at least one organic layer between a pair of electrodes, an electron injection layer comprising a ZnO-containing layer, and a charge generation layer containing an electron acceptor-containing film in contact with the cathode side thereof and an electron donor-containing film adjacent thereto are formed.

Abstract: The invention presents a method for determining the copper concentration of the substrate using the photoconductivity method in a new manner, the method comprising steps in which the photoconductivity property of the substrate is measured for a first time by an arrangement, the surface of the substrate is illuminated by illuminating means emitting photon radiation, the photoconductivity property of the substrate is measured for a second time by an arrangement, and the copper concentration of the substrate is determined from the change between the first and second time of measurement on the basis of the illumination. The invention also presents an arrangement and a software product for determining the copper concentration.

Abstract: An image-display device using phosphor can improve the its luminescence efficiency and characteristics of color coordinates by adding an IIA element to a host crystal of ZnS phosphor to form a composite crystal. The image-display device improves the luminescence efficiency and color coordinate characteristics by using a phosphor expressed by Zn(1−x)MIIAxS:MIB, MIII where MIIA is one or more IIA elements in periodic table of elements, MIB is one or more IB elements and MIII is one or more MIIIA elements such as Sc or Y.

Abstract: A diamond transmission dynode and photocathode are described which include a thin layer of a crystalline semiconductive material. The semiconductive material is preferably textured with a (100) orientation. Metallic electrodes are formed on the input and output surfaces of the semiconductive material so that a bias potential can be applied to enhance electron transport through the semiconductive material. An imaging device and a photomultiplier utilizing the aforesaid transmission dynode and/or photocathode are also described.

Abstract: There are provided a composition for forming a conductive layer comprising 0.01˜0.1% by weight of a conductive black pigment, 0.05˜10% by weight of a binder,0.01˜50% by weight of a conductive agent, and the remaining amount of a solvent on the basis of the total weight of the composition, and a cathode ray tube (CRT) having the conductive layer formed by coating the composition on the outer surface of a panel, drying and heating the same, and a protective layer formed on the conductive layer. The conductive layer formed using the composition has excellent conductivity, contrast characteristics and film properties. Also, a clean color purity and high-quality body color are attained.

Abstract: A composition for a photo-conductive layer and an electron transferring complex system on a color CRT panel having 1-(p-diethylaminophenyl)-1,4,4-triphenyl-1,3-butadiene as an electron donor and a thioxanthene derivative as an electron acceptor in an organic binder dispersion system have not only a high electron transferring capability but also a high electron generating capability so that it is not necessary to add a separate electron generating material.

Abstract: A photoconductive composition and a display device adopting a photoconductive layer formed of the composition. The photoconductive composition includes an electron donor, an electron acceptor, a charge transmitting substance, a binder, a surfactant and a solvent, and the photoconductive composition is characterized in that a 1,4-diphenyl-1-butene-3-yne derivative is used as the electron donor. The photoconductive composition has excellent sensitivity and thermal decomposition property. Thus, there are scarcely residues left after the sintering process, thereby effectively preventing deterioration in image quality of a display device.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Abstract: An image pick-up apparatus is disclosed which includes a target portion having a photoconductive film on a substrate and a target electrode and reads video information converted into an electric signal in the photoconductive film by an electron beam. An insulating region is provided for the target portion such that carrier generated in an ineffective scanned region (a target region corresponding to an area not scanned by the electron beam) does not appear on a surface of the target portion.

Abstract: A photoelectron beam converting device including a semiconductor substrate having a p-n junction formed between an n-type region and a p-type region and an opening portion formed on the side of the semiconductor substrate. An electron beam is generated by a light which enters from the opening portion and by a reverse voltage to be applied to the p-n junction.

Abstract: A light-detecting device for converting a light to an electrical signal utilizes a charge multiplication function and has a stable gain.The light-detecting device comprises a photo-electric conversion unit for converting a measurement light to an electrical signal, a power supply for applying an electric field to the photo-electric conversion unit, a light source for applying an incident light to the photo-electric conversion unit, signal detection means for detecting the charge converted by the photo-electric conversion unit based on the incident light from the light source, and signal hold means for holding the output signal of the signal detection means at a predetermined level.

Abstract: An electroluminescent display device uses a photoconductive material which is of hydrogenrated and carbonated amorphous silicon of formula a-Si.sub.x C.sub.1-x ; with 1-x preferably between 0.05 and 0.50 and which has application to display functions.

Abstract: A photoconductive target of an image pickup tube consists of a transparent substrate, a transparent conductor formed thereon, a photoconductive layer, containing Cd, Te and Se and formed on the conductive layer, and a high resistance layer formed on the photoconductive layer. The Molar ratios of Cd, Te and Se contained in the photoconductive layer satisfy a general formula CdTe.sub.1-x Se.sub.x where x falls within the range between 0.3 and 0.5.

Abstract: An electron emitting device including an active semiconductor layer having a surface from which electrons are emitted. The layer is doped with impurity atoms at a density which decreases with distance from the surface.

Abstract: A hydrogen-containing amorphous silicon layer is formed on a substrate held below 200.degree. C., in a plasma atmosphere, whereupon the plasma is stopped and the layer is heated in a temperature range of 200.degree. C.-400.degree. C. without cooling the substrate. The saturation field for photocurrent of electrons or holes can be made low. In case of using electrons as major carriers, preferably the heating temperature is set in a temperature range of 200.degree. C.-240.degree. C., and in case of using holes as major carriers, preferably it is set in a range of 270.degree. C.-400.degree. C.

Abstract: Disclosed is a light sensitive screen including at least a light-transmitting conductive film and a photoconductive layer, the light-transmitting conductive film being arranged on a side of incidence of light, characterized in that the photoconductive layer is constructed of a single layer or a plurality of layers of one or more photoconductive substances, at least one of such photoconductive substance layers being formed of an amorphous silicon material which contains at least 5 atomic-% to 30 atomic-% of hydrogen, whose optical forbidden band gap is 1.65 eV to 2.25 eV and whose peak component in an infrared absorption spectrum at a wave number of 2,100 cm.sup.-1 is greater than that at a wave number of 2,000 cm.sup.-1. Various characteristics of an imaging device provided with the light sensitive screen, such as dark current, lag and after image characteristics, are improved.

Abstract: In the faceplate structure of image pickup tube having an organic coat, an inorganic transparent conductive film and an inorganic photoconductive film sequentially laminated on the central part of a transparent glass base, the inorganic transparent conductive film and the inorganic photoconductive film are formed so that they are non-porous in at least part of their respective sub-layers in the direction of lamination. Further, the transparent conductive film and the photoconductive film have a larger area than that of the organic coat so that they will completely cover the organic coat.

Abstract: A photoconductive composition for electrophotography containing a photoconductive material, a sensitizing dye comprising a specific very stable sensitizing dye for red light to infrared rays, and a film-forming polymer binder.

Abstract: A photoelectric transfer device in which an electroconductive layer is formed on a surface of an oxide substrate comprising lead component at a ratio of 30-99.5 mol % as PbO and chromium component at a ratio of 0.5-70 mol %, preferably at a ratio of 60-90 mol % as PbO and a chromium component at a ratio of 10-40 mol %.

Abstract: A substantially flat body of a photoconductive semiconductor material is coated on one surface with an electrically conductive layer. A layer of a solid insulator material is on another surface of the semiconductor material. The insulator material is of the type having mobile deep lying carriers and forms a blocking junction with the semiconductor material. The insulator material may be an electronically conductive glass, an ionically conductive glass, or a cermet composition. The photoconductor can be used as a target for a camera tube, or as an electrophotographic plate.

Abstract: A photoemitter sensitive in the optical range of wavelengths comprises, according to the invention, a substrate made from p-type semiconductor materials of a group of chemical compounds A.sup.II B.sup.IV C.sub.2.sup.V, where A.sup.II are elements belonging to the second subgroup of group II: zinc and cadmium, B.sup.IV are elements belonging to the second subgroup of group IV: germanium, silicon and tin, C.sub.2.sup.V are elements belonging to the second subgroup of group V: phosphorus and arsenic, and a coating of cesium and oxygen. Homogeneity of the bulk and surface properties of the emitter substrate provides high sensitivity in the near-threshold region of photosensitivity corresponding to the width of the forbidden band of the photoemitter substrate.

Abstract: A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first region and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, a third region disposed on the second region and containing Se in which an element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and a fourth region disposed on the third region and containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively.

Abstract: A window for an electron tube formed by a semiconductor device having a support of monocrystalline oxide, by a connection layer formed by a barium- or calcium-boroaluminate, by at least one passivating layer, and by an active layer having a constant composition and formed by a semiconductor material of the p-conductivity type.

Abstract: In a television pickup tube, a target comprises a photo-conductive material such as antimony trisulfide, amorphous selenium or the like arranged on a transparent zinc oxide layer which is formed adjacent to a transparent electrode on a transparent faceplate or substrate. The transparent electrode may be etched so as to form a pair of electrodes each connected to a signal deriving terminal in the case where the target structure is for a color television pickup tube.

Abstract: The present invention relates to novel photoconductive materials, their preparation, and their use in camera tubes. In particular, we disclose a method for preparing a Conductron-type photoconductive element from silver sulfide.

Abstract: In a method of manufacturing the target of a pickup tube of the class wherein an N-type light transmitting conductive film is formed on a substrate, an N-type photoconductive film consisting of a group II-VI compound is formed on the N-type light transmitting conductive film by means of a vacuum deposition device comprising a boat for containing the compound and a hollow shielding member, and then a P-type amorphous photoconductive film consisting essentially of metal selenium is applied onto the N-type photoconductive film. The temperature of the substrate is maintained in a range of from 50.degree.C to 250.degree.C when the N-type photoconductive film is formed on the N-type light transmitting conductive film. The distance between the boat and the substrate is maintained in a range of from 8 to 13 cm.

Abstract: An electrochromic display device containing at least two electrodes and electrolyte in contact therewith is disclosed, wherein the electrolyte is an electrolytic solution which has been gelated by polymer.