Abstract: Insulating crystals are coated on a metal mesh of a storage tube and give rise to a hysteresis effect with respect to the passage of flood electrons through the metal mesh, the hysteresis effect being caused by the persistent polarization of the insulating crystals when an electric field has been applied and the depolarization of the crystals due to the irradiation of an electron beam having an energy which is large enough to penetrate through the negative field produced by the persistent polarization. The clean surface of the insulating crystals, which contains recombination centers of electrons and holes and the deep traps of electrons and holes, is an essential feature of the insulating crystals and are necessary for the hysteresis effect with respect to the passage of the flood electrons through the metal mesh.

Abstract: A digitizing matrix for electron beams of the type wherein electrons are permitted to pass through openings in the matrix to a target which is scanned with an electron beam. The target is formed from a series of stacked electrode units each formed by electrically-conductive layers extending perpendicular to each other and through which the aforesaid openings pass. By establishing an electrical potential between crossed conductive layers, an electric field will be generated in the area defined by the crossed conductors to stop passage of electrons through one or more of the openings in the aforesaid area. The invention is characterized in that the stacked electrodes are formed as a single unit by thick film techniques wherein successive layers of a dielectric and crossed conductive layers are formed. The assembly facilitates the fabrication of very thin, high electron efficiency, low capacity and low cost flat panel matrices.

Abstract: A charge storage tube includes a target comprising a semiconductor substrate, an insulating layer formed on the semiconductor substrate and a metal electrode formed on the insulating layer, wherein a target potential of the target can be changed so that it becomes not only below a first cross-over potential but also over the first cross-over potential. In the charge storage tube, a signal is written in the target by a signal writing means to generate pairs of electron-hole in the target, a surface potential of the insulating layer with the written signal is changed so as to become over the first cross-over potential, and the written signal is read out by scanning electron beams on the target.