Abstract: The present disclosure provides a quantum dot light emitting panel, a display device, and a manufacturing method.

Abstract: A photonic device is provided. The photonic device may include an input region and a dispersive region optically coupled with the input region. The dispersive region may include a first material and a second material anisotropically distributed to form a plurality of interfaces that each correspond to a change in a refractive index of the dispersive region. The plurality of interfaces may collectively structure the dispersive region to generate an output optical signal from an input optical signal. The photonic device may also include an output region, optically coupled with the dispersive region. The plurality of interfaces may form a material interface pattern in the dispersive region that is characterized by a defect distribution to introduce one or more spectral artifacts into the output optical signal that collectively define a unique spectral signature of the photonic device.

Abstract: A display device includes a plurality of pixel electrodes, a common electrode common to the plurality of pixel electrodes, and a light-emitting layer sandwiched between the plurality of pixel electrodes and the common electrode. The light-emitting layer includes quantum dots covered by ferritin. Each of the plurality of pixel electrodes and the quantum dots are bonded via a peptide modifying the ferritin.

Abstract: The present disclosure is drawn to a method and system for the excitation, identification, and authentication of light emitting materials using a mobile device comprising at least one Vertical Cavity Surface Emitting Laser (VCSEL), for use in a variety of applications.

Abstract: A light emitting element (e.g., light emitting diode) includes a first electrode, a hole transport region on the first electrode, an emission layer on the hole transport region and containing a quantum dot complex, an electron transport region on the emission layer, and a second electrode on the electron transport region, wherein the quantum dot complex contains two or more quantum dots each including a core and a shell surrounding the core, the shell of one quantum dot is combined with a shell of at least one neighboring quantum dot, and the light emitting element (e.g., light emitting diode) may thus have improved luminous efficiency and service life.

Abstract: A surface emitting laser includes a substrate, a plurality of surface emitting laser elements on a first surface of the substrate, a first electrode electrically connected to a first conductive semiconductor of the surface emitting laser elements; and a second electrode electrically connected to a second conductive semiconductor of the surface emitting laser elements. Each of the surface emitting laser elements includes a first reflecting mirror on the substrate; an active layer on the first reflecting mirror; and a second reflecting mirror on the active layer. When a first contact region in which the first electrode and the first conductive semiconductor are connected to each other is on the first surface or in the first conductive semiconductor of the surface emitting laser elements. The first electrode is electrically connected to the light emitting units. The second electrode is electrically connected to each of the light emitting units.

Abstract: A lighting device includes a first LED configured to emit a first light, a second LED configured to emit a third light, a first phosphor disposed over the first LED and second LED, and arranged to absorb a portion of the first light and in response emit a second light of a longer wavelength than the first light, and a second phosphor disposed over the second LED, the second phosphor arranged to absorb a portion of the third light and in response emit a fourth light of a longer wavelength than the third light, and the fourth light exits the second phosphor into the first phosphor, and both the second light and fourth light exit the lighting device though the first phosphor.

Abstract: Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

Abstract: Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a free space optical (FSO) communication apparatus includes a digital data port, an array of light-emitting diodes (LEDs) each configured to have a transient response time of less than 500 picoseconds (ps), and current drive circuitry coupled between the digital data port and the array of LEDs.

Abstract: Provided are a light-emitting device, an electronic apparatus including the same, and a method of manufacturing the light-emitting device, wherein the light-emitting device includes: a first electrode, a second electrode facing the first electrode, and an interlayer between the first electrode and the second electrode, wherein the interlayer includes an emission layer and an electron transport layer, the electron transport layer is between the emission layer and the second electrode, and the electron transport layer includes an electron transport particle, the electron transport particle includes a core and a shell covering the core, the core includes an oxide, a chalcogenide, or any combination thereof, and the shell includes a chalcogenide, the chalcogenide of the core being the same as or different from the chalcogenide of the shell.

Abstract: A quantum dot light-emitting apparatus includes a substrate, with a first electrode layer located on the substrate. An emissive layer having a first set of quantum dots is electrically coupled with the first electrode layer, and a second electrode layer is also electrically coupled with the emissive layer. The second electrode layer is located opposite the first electrode layer, relative to the emissive layer. A first charge transport layer is placed between the emissive layer and the first electrode layer, and a second charge transport layer is placed between the emissive layer and the second electrode layer. At least one of the first charge transport layer and the second charge transport layer includes a second set of quantum dots.

Abstract: A display device including a first light emitting element including a first emission layer and a first charge transport layer adjacent to the first emission layer, the first emission layer including a first quantum dot to emit first light, and a second light emitting element including a second emission layer and a second charge transport layer adjacent to the second emission layer, the second emission layer including a second quantum dot to emit second light that is longer in wavelength than the first light. The first charge transport layer includes a first metal oxide. The second charge transport layer includes a second metal oxide different from the first metal oxide.

Abstract: Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

Abstract: Disclosed herein are methods, devices, and system for beam forming and beam steering within ultra-wideband, wireless optical communication devices and systems. According to one embodiment, a free space optical (FSO) communication apparatus is disclosed. The FSO communication apparatus includes an array of optical sources wherein each optical source of the array of optical sources is individually controllable and each optical source configured to have a transient response time of less than 500 picoseconds (ps).

Abstract: Provided is a display device. The display device includes a first substrate and a second substrate which are formed of different materials; a first LED disposed on the first substrate; and a second LED and a third LED disposed on the second substrate, in which the first LED, the second LED, and the third LED are disposed between the first substrate and the second substrate. Therefore, in consideration of the growth efficiency of the LEDs which emit different colored light, the first LED is disposed on the first substrate and the second LED and the third LED are disposed on the second substrate which is formed of a different material from the first substrate, thereby improving the growth efficiency of the plurality of LEDs.

Abstract: The present invention provides a combined power socket for artificial trees. The combined power socket includes a first socket and a second socket which are capable of supplying control signals to light strings on the artificial trees in addition to power supply, thus can realize the intelligent control of light strings. Furthermore, the first socket and a second socket can be connected in two directions without considering the positive and negative poles of the power supply. The product assembly is simpler and more convenient.

Abstract: An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

Abstract: The present disclosure provides an array substrate and a display device. The array substrate comprises a plurality of pixel units arranged in an array, each pixel unit including a light emitting unit and a pixel definition layer disposed around the light emitting unit; wherein in at least one pixel unit, a light wave partition groove is provided in the pixel definition layer on at least one side of the light emitting unit, and a light wave blocking layer is provided in the light wave partition groove.

Abstract: Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

Abstract: Provided is a light-emitting device wherein short-wavelength light included in emitted white light is attenuated with a small increase in manufacturing cost and a small decrease in luminous flux. The light-emitting device includes a mount board, LED elements mounted on the mount board and emitting first light which is blue light or has a shorter wavelength than blue light, and a sealing resin containing phosphor particles and titanium-dioxide particles and filled on the mount board to integrally seal the LED elements, the phosphor particles being excited by the first light to emit second light. The first light and the second light are mixed and emitted as white light, and transmitting through the sealing resin causes the first light to be attenuated more than the second light by the titanium-dioxide particles.

Abstract: An organic light-emitting diode (OLED) display and method of fabricating the same are disclosed. In one aspect, the OLED display includes a first substrate including a display area and a peripheral area surrounding the display area. The display area includes a plurality of pixels each including an OLED and the peripheral area includes a signal driver electrically connected to the pixels. A conductive layer is formed over the signal driver and on opposing sides of the signal driver and a second substrate is formed over the first substrate. The OLED display further includes a first seal interposed between the first and second substrates in the peripheral area and substantially sealing the first and second substrates and a second seal surrounding the first seal and formed over the signal driver.

Abstract: An illuminating module includes a light source assembly and a first lens unit. The light source assembly is configured to produce a light beam, wherein the light beam has a first central optical axis. The first lens unit has a first lens optical axis, the light beam passing through the first lens unit is formed to be an illuminating beam, the illuminating beam has a second central optical axis, and the second central optical axis intersects with the first lens optical axis. An optical apparatus is also provided, including the illuminating module, an optical modulation module and a light guiding module. The illuminating beam passes through the optical modulation module to be an image beam having an image. The image beam travels in the light guiding module, leaves the light guiding module and is received by user's eyes.

Abstract: A microelectronic device contains a high voltage component having an upper plate and a lower plate. The upper plate is isolated from the lower plate by a main dielectric between the upper plate and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the upper plate and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer of silicon nitride having a refractive index between 2.11 and 2.23. The lower-bandgap dielectric layer extends beyond the upper plate continuously around the upper plate. The lower-bandgap dielectric layer has an isolation break surrounding the upper plate at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the upper plate.

Abstract: A light-emitting device 100 includes: a light-emitting element; a light-transmissive member covering the light-emitting element; and a light-diffusing agent contained in the light-transmissive member and comprising hollow particles. The light-transmissive member has a first surface having irregularities according to the light-diffusing agent. The first surface of the light-transmissive member has a convex shape with a height gradually increased from a peripheral portion of the first surface toward a central portion of the first surface.

Abstract: An upper layer (4,5) made of non-doped III-V compound semiconductor is formed on a lower layer (3) made of non-doped III-V compound semiconductor. Impurity source gas is fed through vapor phase diffusion using an organometallic vapor-phase epitaxy device to add an impurity to the upper layer (4,5). The vapor phase diffusion is continued with the feed of the impurity source gas stopped or with a feed amount of the impurity source gas lowered.

Abstract: A display apparatus including a light emitting part including a plurality of light emitting diodes spaced apart from each other, and a light conversion part configured to convert light emitted from the light emitting part, in which the light emitting diodes include at least one first light emitting diode and at least one second light emitting diode, the light conversion part emits red light through wavelength conversion of light emitted from the at least one first light emitting diode, and the at least one second light emitting diode emits green light.

Abstract: A method of manufacturing an organic light emitting display device, includes forming a thin film transistor on a substrate, the substrate having emissive areas; forming a planarization layer on the thin film transistor; forming a contact hole exposing a source or drain electrode of the thin film transistor through the planarization layer; forming a first electrode connected to the source or drain electrode of the thin film transistor through the contact hole; forming a hole between adjacent emissive areas, the hole being provided in the planarization layer; forming a pixel defining layer on a portion of the first electrode and in the hole, wherein the pixel defining layer fills a portion of the hole and is provided on both side wall and floor of the hole; and forming a light emitting layer, a second electrode and an encapsulation layer sequentially on the substrate having the first electrode and the pixel defining layer.

Abstract: The present disclosure provides a display apparatus and an operating method thereof. The display apparatus includes a control unit outputting a first signal and a display module coupled to the control unit. The display module continuously displays a first image in a first frame time based on the first signal, the first image has a first pattern, and a first ratio of an area of the first pattern to an area of the first image ranges from 5% to 30%. The first pattern at a first time point in the first frame time has a color located at a first coordinate position in a CIE 1931 chromaticity diagram, the first pattern at a second time point in the first frame time has another color located at a second coordinate position in the CIE 1931 chromaticity diagram, and the first coordinate position is different from the second coordinate position.

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract: Disclosed is an organic light emitting display device including a thin film transistor on a substrate, a planarization layer on the thin film transistor, a contact hole passing through the planarization layer to expose a source or drain electrode of the thin film transistor, a first electrode on the planarization layer, the first electrode being connected to the source or drain electrode of the thin film transistor through the contact hole, a hole between the first electrode and another first electrode adjacent thereto, the hole being a recessed portion of the planarization layer, a pixel defining layer covering the first electrode passing through the contact hole and the planarization layer disposed in the hole, a light emitting layer on the first electrode and the pixel defining layer, and a second electrode on the light emitting layer.

Abstract: The present disclosure relates to an organic light-emitting diode having a low driving voltage and long lifespan and more particularly, to an organic light-emitting diode, comprising a first electrode, a second electrode facing the first electrode, and a light-emitting layer interposed therebetween, wherein the light-emitting layer contains at least one of the amine compounds represented by the following Chemical Formula A or Chemical Formula B, plus the compound represented by Chemical Formula D. The structures of Chemical Formulas A, B, and D are the same as in the specification.

Abstract: Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

Abstract: The invention discloses a transparent OLED display and manufacturing method thereof. The present invention provides a manufacturing method of transparent OLED display, by preparing the cathode and the anode on two different substrates to effectively avoid the destruction of the light-emitting layer made of the organic light-emitting material caused by sputtering the anode at the top of OLED to improve yield rate. The use of the transparent conductive metal oxide to manufacture the cathode and the anode of the OLED display provides an effective solution to the manufacturing of transparent OLED display which requires high conductivity and high transparency for the electrode material. In addition, the two substrates can be manufactured the same time and then pressed to attach to achieve high manufacturing efficiency. The OLED display provided by the present invention is easy to manufacture and provides good performance.

Abstract: A lighting device (1) and an operating method for the lighting device (1), which comprises at least one base chip (21) and a plurality of cover emitter regions (22). The base chip or chips (21) and the cover emitter regions (22) are realized by light-emitting diode chips and are electrically controlled independently of one another. Main emission directions (M) of these light-emitting diode chips are oriented parallel to one another. The cover emitter regions (22) are partially overlapping with the at least one base chip (21), so that an overlap region (3, B) is formed and the at least one base chip (21) radiates through the cover emitter regions (22) during operation. The cover emitter regions (22) are arranged in a common plane perpendicular to the main emission directions (M).

Abstract: An organic light-emitting display device includes: a substrate; a thin film transistor over the substrate, the thin film transistor including a semiconductor layer and a gate electrode overlapping the semiconductor layer; a conductive layer between the substrate and the semiconductor layer of the thin film transistor; an insulating layer between the conductive layer and the thin film transistor; a passivation layer covering the thin film transistor; a pixel electrode over the passivation layer, the pixel electrode being electrically connected to the thin film transistor via a contact hole defined in the passivation layer; an emission layer over the pixel electrode; and an opposite electrode over the emission layer, the opposite electrode being electrically connected to the conductive layer.

Abstract: A method of manufacturing a flexible display is disclosed. In one aspect, the method includes preparing a carrier comprising a first region and a second region surrounding the first region, forming a first substrate forming layer over at least the first region of the carrier, removing a top surface of the carrier from the second region of the carrier and forming an adhesive layer over the first substrate forming layer throughout the first and second regions of the carrier. The method also includes forming a second substrate forming layer over the adhesive layer throughout the first and second regions of the carrier, and separating the first substrate forming layer from the carrier.

Abstract: A lighting waveguide and its assembly in an LED lighting fixture. LED waveguide technology offers a novel approach to the design of a lighting fixture that still retains a typical appearance of a lamp shade and lighting fixture. A nominally transparent plastic or glass waveguide is fashioned into the shape of a lamp shade with a slot at one side that defines a gap between two edges or ends of the waveguide, and possess perturbations on the surface of the waveguide to facilitate the extraction and provide usable light from the lighting fixture. An LED PCB board, with side-mounted LEDs, is mounted to the lighting fixture between the slot in the waveguide such that the light emitting surfaces of the LEDs are proximal to and face towards the edges of the waveguide, Illuminating the waveguide and providing light from the light fixture via the perturbations that provide a light extraction.

Abstract: The illuminated headset is a headphone that is adapted for listening to audio sources, which provide electrical signals, which are converted to audible sound by the speakers in the headphone. The headphone is enhanced with an illumination system. The illumination system comprises a plurality of LEDs and a phosphorescent material. The plurality of LEDs is used to illuminate the cable, the left speaker, and the right speaker. The phosphorescent material is used to form the headband, the left speaker housing, and the right speaker housing. The illuminated headset comprises a headset, a master cable, a jack, a clasp, a left cable, and a right cable.

Abstract: The organic EL display panel includes: an active matrix substrate including a thin-film transistor; and an organic EL element disposed on the active matrix substrate, the organic EL element including, in the order from the active matrix substrate side, a cathode electrically connected to the thin-film transistor, a first charge conversion layer in contact with the cathode, a first hole injection layer, a first hole transport layer, a first light-emitting layer, a first electron transport layer, a first electron injection layer, a second charge conversion layer, and an anode in contact with the second charge conversion layer, the first charge conversion layer designed to inject electrons into the cathode and emit holes to the first light-emitting layer side, the second charge conversion layer designed to inject holes into the anode and emit electrons to the first light-emitting layer side.

Abstract: An organic light-emitting diode (OLED) display comprises, an anode electrode disposed over a substrate; a cathode electrode disposed opposite the anode electrode; a charge generation layer disposed between the anode electrode and the cathode electrode; a first stack disposed between the charge generation layer and the cathode electrode and configured to comprise a first organic light-emitting layer, a first common layer disposed over the first organic light-emitting layer, and a second common layer disposed under the first organic light-emitting layer; and a second stack disposed between the charge generation layer and the anode electrode, wherein at least one of the first common layer and the second common layer covers a sidewall of the charge generation layer.

Abstract: There is provided an EL display device of a color filter system which obtains sufficient brightness and contrast while making it difficult to generate a color mixture even if pixels become fine. An EL display device 100 according to the present invention includes a first substrate 1, a circuit layer 2 formed on the first substrate 1, a color selection reflection layer 11 formed in an upper layer of the circuit layer 2, lower electrodes 5 formed in an upper layer of the color selection reflection layer 11, a white light emission EL layer 7 formed in an upper layer of the lower electrodes 5, an upper electrode 8 formed in an upper layer of the EL layer 7, and a sealing layer 9 formed in an upper layer of the upper electrode 8.

Abstract: The invention relates to novel compounds of formula (III) that can be used as heterocyclic dyes of unique structure and properties. These compounds can be obtained in a three-step synthesis from simple substrates. The compounds according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the compounds according to the invention are used in organic field effect transistors, organic photovoltaics (solar cells) and photodiodes.

Abstract: The present invention discloses organic light emitting device, manufacturing method thereof, organic light emitting display device and driving method thereof. The organic light emitting device comprises a substrate and a first electrode layer, an organic layer and a second electrode layer positioned on the substrate, the organic layer is arranged between the first and second electrode layers, the first electrode layer, the organic layer and the second electrode layer form a laminated region for emitting light in a first specific color in a positive half cycle of alternating current and an inverted region for emitting light in a second specific color in a negative half cycle of alternating current, and at least portions of projections of the laminated region and the inverted region on the substrate are not overlapped. Technical solutions of the present invention render the organic light emitting device with adjustable light color and prolonged service life.

Abstract: An embodiment of the present invention relates to a radiation emitting device comprising: a radiation emitter for generating radiation; a waveguide; a lens placed between the radiation emitter and the waveguide and directing a first portion of the radiation towards the waveguide; a sleeve that comprises a reflective inner surface and is placed between the radiation emitter and the waveguide, said inner reflective surface coupling a second portion of the radiation into the waveguide; wherein the lens and the sleeve are separate components that can be positioned relative to each other during fabrication of the radiation emitting device.

Abstract: The invention relates to an illuminant (23) and a socket (20) for a lamp (15). The features of the socket can be implemented also independently of the features of the illuminant (23). The socket has supply terminal areas on multiple sides of the socket housing such that the socket (20) can be selectively supplied with electricity and wired from different sides or also simultaneously from multiple sides. Independently of the number and the arrangement of the supply terminal areas (94), multiple electrical supply terminals (95) having the same polarity are provided on the socket (20). Said supply terminals (95) having the same polarity are electrically short-circuited by means of a shorting connector (116), in particular two identical shorting connectors (116) being arranged in the socket housing. Said socket (20) and illuminant (23) modularly achieve large total illumination surfaces in a lamp (15) and an appealing appearance in a very simple manner.

Abstract: The present application provides an organic light emitting device and a method for manufacturing the same, the organic light emitting device including a first electrode; an organic material layer; and a second electrode provided in consecutive order, the organic material layer further including a light emitting layer; and an optical length control layer provided between the light emitting layer and the second electrode, the optical length control layer including a first optical length control layer that includes a compound represented by the following Chemical Formula 1, the light produced in the light emitting layer being emitted through the first electrode.

Abstract: The present specification provides a heterocyclic compound, and an organic light emitting device including: a first electrode, a second electrode, and organic material layers formed of one or more layers including a light emitting layer disposed between the first electrode and the second electrode, in which one or more layers of the organic material layers include the heterocyclic compound or a compound in which a heat-curable or photo-curable functional group is introduced into the heterocyclic compound.

Abstract: A nitride-based semiconductor light-emitting element includes a substrate and a nitride semiconductor multilayer structure. The nitride semiconductor multilayer structure includes a nitride semiconductor active layer which emits polarized light. Angle ?, which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, is greater than 90°. Angle ?2 (mod 180°), which is an absolute value of an angle which is formed by an intersecting line of at least one of the plurality of lateral surfaces of the substrate and the principal surface of the substrate with respect to a polarization direction in the principal surface of the polarized light, is an angle which does not include 0° or 90°.

Abstract: There is provided an EL display device of a color filter system which obtains sufficient brightness and contrast while making it difficult to generate a color mixture even if pixels become fine. An EL display device 100 according to the present invention includes a first substrate 1, a circuit layer 2 formed on the first substrate 1, a color selection reflection layer 11 formed in an upper layer of the circuit layer 2, lower electrodes 5 formed in an upper layer of the color selection reflection layer 11, a white light emission EL layer 7 formed in an upper layer of the lower electrodes 5, an upper electrode 8 formed in an upper layer of the EL layer 7, and a sealing layer 9 formed in an upper layer of the upper electrode 8.

Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure which is positioned on a substrate and has a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer. A first electrode pad is electrically connected to the first conductive type semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second conductive type semiconductor layer. Further, a pattern of light extraction elements is positioned on the second conductive type semiconductor layer.