Abstract: The present invention utilizes a three-phase or multiphase AC power source, and the electric power of each phase respectively drives its corresponding solid-state light emitting member, and the solid-state light emitting members respectively driven by each phase power are arranged adjacently or arranged with an overlapping means, so that the light of the individual solid-state light emitting members respectively driven by the multiphase power source and arranged adjacently or arranged with an overlapping means can reduce the brightness pulse through synthetic illumination; and through being controlled by a solid-state switch device for controlling AC conductivity phase angle (1000) installed on the power source of each phase, when the illumination brightness of corresponding solid-state light emitting member is lower than that of other solid-state light emitting members arranged adjacently or arranged with an overlapping means, the power source is cut for saving energy.

Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.

Abstract: The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.

Abstract: A structural configuration of a failsafe OLED chain with multiple OLED lighting components in series connection is described. During the manufacture of the lighting component a weak spot is specifically installed at an appropriate location of the structure in the form of a break-through layer, which in the event of a failure of the lighting component breaks down and bypasses the component with a bypass layer.

Abstract: A photon pump for a laser with a switch added to prevent capacitor discharge after the laser reaches maximum florescence.

Abstract: A multi-electrode plasma source for maintaining a plasma loop for heating a stream of sample material traveling along a predetermined path through the loop. Included is at least one set of at least three spaced-apart electrodes having tips circumferentially distributed about such a stream path. Voltages are applied to the electrodes and plasma gas is directed into the region of the tips. The tip distribution, voltages and plasma gas flow are appropriate to generate electrical plasma generally surrounding the path.