Abstract: A charged particle beam device includes a lens barrel having a charged particle source, a sample chamber in which a sample to be irradiated with a charged particle beam is provided, and a heat emission type electron source disposed in the sample chamber and maintained at a lower potential than that of an inner wall of the sample chamber, in which the inside of the sample chamber is cleaned by electrons (e?) emitted from the heat emission type electron source after a heating current is generated by applying a voltage from an electron source power supply. The heat emission type electron source is maintained at a lower potential than that of the inner wall of the sample chamber by applying a negative voltage to the heat emission type electron source using a bias power supply. A magnitude of the negative voltage applied to the heat emission type electron source is preferably about 30 to 1000 V, particularly preferably about 60 to 120 V.

Abstract: A cold field emission (CFE) electron source for a focused electron beam system such as a transmission electron microscope (TEM), scanning transmission electron microscope (STEM), or scanning electron microscope (SEM) is disclosed. The source employs an emitter enclosure electrode behind the CFE tip which, in conjunction with the extractor electrode, defines a closed volume that can be thoroughly cleaned by electron impact desorption (EID) and radiative heating from a heated filament located between the emitter enclosure electrode and extractor electrode. The extractor electrode may have a counterbore which restricts backscattered electrons generated at the extractor from reaching portions of the source and gun which have not been cleaned by EID.

Abstract: A system and method for controlling the temperature of both an electron emitter and a filament to their lowest possible operating temperature is disclosed. The apparatus includes a filament, an electron emitter heated by the filament to generate an electron beam, and a power supply configured to supply power to each of the filament and the electron emitter. The apparatus also includes a control system to control a supply of power to each of the filament and the electron emitter, with the control system being configured to receive an input indicative of a desired electron emitter operating temperature, cause a desired voltage to be applied between the electron emitter and the filament, and cause a desired voltage to be applied to the filament based on the desired emitter element operating temperature, so as to minimize an operating temperature of the electron emitter and the filament.

Abstract: A highly-reliable electronic frequency tuning magnetron comprises an anode for forming a resonant cavity which is segmented into a plurality of spaces in an inner periphery side of a cylindrical anode shell, a cathode provided at the center of the anode shell along its cylindrical axial direction and an exhausted structure having a coaxial central conductor which is connected to the inside of the cavity of the anode shell and is coupled thereto in a high-frequency manner, wherein the coaxial central conductor is externally led through a wall of the exhausted structure via a through-hole and the through-hole is covered by a dielectric portion placed between an external conductor for constituting the coaxial central conductor and the central conductor, wherein a portion of the led coaxial central conductor is conductively connected to a switching element.

Abstract: An electron beam emitter includes an electron generator for generating electrons. The electron generator can have a housing containing at least one electron source for generating the electrons. The at least one electron source has a width. The electron generator housing can have an electron permeable region spaced from the at least one electron source for allowing extraction of the electrons from the electron generator housing. The electron permeable region can include a series of narrow elongate slots and ribs formed in the electron generator housing and extending laterally beyond the width of the at least one electron source. The electron permeable region can be configured and positioned relative to the at least one electron source for laterally spreading the electrons that are generated by the at least one electron source.

Abstract: An image display apparatus according to the present invention comprises a plurality of electron emitting devices having an electron emitting portion provided between a cathode electrode and a gate electrode; a cathode wiring connected to the cathode electrode; and a gate wiring connected to the gate electrode and having a resistance higher than the resistance of the cathode wiring, wherein an impedance element having a resistance value of Ry and an electrostatic capacitance of Cy is connected to between the cathode wiring and the cathode electrode, a resistive element having a resistance value of Rx is connected to between the gate wiring and the gate electrode, and |Ry/(1+j?RyCy)|<Rx and Ry>Rx are satisfied, where ? is 100 MHz.

Abstract: A stable cold field electron emitter is produced by forming a coating on an emitter base material. The coating protects the emitter from the adsorption of residual gases and from the impact of ions, so that the cold field emitter exhibits short term and long term stability at relatively high pressures and reasonable angular electron emission.

Abstract: An apparatus for testing infrared cameras includes: a cover plate which has a plurality of holes formed therethrough and arranged in line in a horizontal direction at a regular interval, the cover plate being adapted to emit an amount of infrared light; and an emission source which is disposed in parallel to and behind the cover plate as viewed from infrared cameras to be tested, the emission source being adapted to emit a different amount of infrared light when compared with the cover plate.

Abstract: A microwave generation device includes: a magnetron having a cathode containing a filament and an anode containing a hollow resonator arranged to oppose to each other; a filament current measuring unit; and an application voltage measuring unit for measuring voltage applied to the filament. Based on the current and the voltage obtained by the current measuring unit and the voltage measuring unit, a resistance value calculation unit obtains a resistance value of the filament. A temperature calculation unit calculates the filament temperature from the resistance value and the resistance-temperature dependent characteristic. A filament power source is controlled by a power control unit so that the filament temperature is within a predetermined temperature range.

Abstract: A light-emitting device, includes: an emitter sealed with a gas emitting light caused by a microwave; a high frequency power supply section including a diamond SAW oscillator and outputting a high frequency signal being output from the diamond SAW oscillator to a subsequent stage; and a waveguide unit emitting the high frequency signal being input from the high frequency power supply section towards the emitter as the microwave.

Abstract: An apparatus for producing an annular electron beam comprises a cathode for generating electrons, a cavity having an annular shape and operable to receive the electrons, an energy input coupled to the cavity, where the energy input is operable to supply Radio Frequency (RF) energy at the cavity and an energy output coupled to the cavity and operable to receive accelerated electrons from the cavity and operable to output the accelerated electrons as an annular electron beam.

Abstract: A method of producing a porous thin-film-deposition substrate, which has the steps of: placing onto a substrate that has an electrostatic charge on its surface, fine particles with a surface electrostatic charge opposite to the electrostatic charge of the substrate surface, depositing a thin film on the fine-particle-placed substrate, and then removing the fine particles to form fine pores in the thin film; further, a method of producing an electron emitting element, which has the steps of: adding a catalyst metal on a substrate, placing fine particles onto the catalyst-added substrate, depositing a thin film on the fine-particle-placed substrate, then removing the fine particles to form fine pores in the film, and growing needle-shaped conductors on the catalyst metal that is exposed on a bottom face of the fine pore.

Abstract: Disclosed herein is a magnetron. The magnetron comprises an anode cylinder, upper and lower magnets provided to upper and lower portions of the anode cylinder, and upper and lower magnetic poles connected to the magnets, respectively. Each of the magnets has an inner diameter of 19˜21 mm, a thickness of 11.5˜12.5 mm, and an outer diameter of 50˜54 mm.

Abstract: A magnetron comprising an anode portion having an anode cylinder and vanes, a cathode portion having a coil-shaped filament, magnetic poles disposed at the upper and lower ends of the filament, ring-shaped permanent magnets made of a Sr ferrite magnet containing La—Co, an input portion and an output portion. The diameter ?a of the inscribed circle at the ends of the vanes constituting the anode portion is in the range of 7.5 to 8.5 mm, and the outside diameter ?c of the coil-shaped filament 1 constituting the cathode portion is in the range of 3.4 to 3.6 mm.

Abstract: A magnetron includes a filament to irradiate thermoelectrons, a plurality of anodic vanes arranged around the filament in radial directions, and an antenna connected to at least one of the anodic vanes. The vane connected to the antenna is provided with an antenna holding part. The antenna holding part outwardly extends from an upper edge of the vane by a predetermined length to connect the antenna to the vane.

Abstract: An electron beam generating device, wherein a high-resistance film is formed on the outer surface of an insulator provided with a cathode for emitting thermal electrons and a grid for collecting thermal electrons and forming an electron beam to allow a feeble current to flow to the high-resistance film, thereby preventing the accumulation of thermal electrons on the insulator and discharging. The upper portion of the high-resistance film connected to a chamber supplies an approximate reference potential to the upper portion of the film, and the lower portion of the high-resistance film connected to the grid supplies almost the same potential as that of the grid to the lower portion of the film to allow a feeble current to flow to the film. The prevention of accumulation of thermal electrons on the insulator can prevent discharging, accurately control the current capacity of an electron beam, and give the electron beam generating device a longer service life.

Abstract: A method is applied for operating a cold cathode having at least one electron emission portion and a control electrode for controlling an emission of electrons, in which an electron beam is extracted out of the cold cathode by applying operating voltages to the electron emission portion and the control electrode, respectively. At least one auxiliary electron emission portion is provided other than the electron emission portion positioned at an operating position for emitting electrons. In order to replace the electron emission portion to be operated, the electron emission portions are moved so that the auxiliary electron emission portion is positioned at the operating position.

Abstract: An optically tuned magnetron oscillator employs materials whose electrodynamic properties are altered by the absorption of light. A probe constructed from a leaky dielectric light guide coated with a photoconductive material is inserted into each of the magnetron's cavities. When light is injected into the light guide, it leaks into the coating where it is absorbed, creating free charge carriers whose presence alters the dielectric properties of the material, thereby perturbing the resonant frequency of the cavity. The frequency can be controlled by varying the amount of light injected into each of the optical probes. When no light is present, the resonant frequency of the magnetron cavity will be at one extreme of its operating band; when the light is at full intensity, the change in the properties of the probe will be maximum as will be the change in the resonant frequency.

Abstract: A magnetron for use in a DC magnetron sputtering reactor that can rotate at a smaller diameter during a deposition phase and at a larger diameter during a cleaning phase, whereby sputter material redeposited outside of the deposition sputtering track is removed during the cleaning phase. An embodiment for a two-diameter magnetron includes a swing arm fixed on one end to the magnetron rotation motor shaft and on the other end to a pivot shaft, pivotably coupled to the magnetron. When the magnetron is rotated in different directions, hydrodynamic forces between the magnetron and the chilling water bath cause magnetron to pivot about the pivot shaft. Two mechanical detents fix the limits of the pivoting and hence establish the two diameters of rotation.