Abstract: Simple, rapid and low-cost assembly methods of a LED lamp are provided. A standard lamp base having two electrodes and a cavity is soldered with a resistor to the first one of the electrodes, and then filled with a thermally conductive electric insulator in the cavity. A circuit board is attached onto the thermally conductive electric insulator and then soldered to the second electrode and the resistor. An LED device is soldered onto the circuit board such that the LED device and the resistor are serially connected between the electrodes. Preferably, the circuit board has a through hole through which a thermally conductive member is inserted into the thermally conductive electric insulator with its lower end, and the LED device is placed onto the upper end of the thermally conductive member.

Abstract: A protection circuit is provided for a T8 LED lighting tube, including at least two power transmission connectors and at least two rectification circuits. The power transmission connectors are respectively mounted to opposite ends of the T8 LED tube and each has at least two contacts that are respectively engageable with tube retention connectors formed on opposite ends of a T8 fluorescent light fixture to receive an external AC power. Each rectification circuit is composed of at least one rectifier semiconductor and the two rectification circuits are respectively connected to the contacts of the two power transmission connectors.

Abstract: A high-definition CRT is provided having an electron gun to produce high beam current without increasing spot size and to provide lower electrical power requirements at high beam-modulation frequencies. The electron gun includes three electrodes having clusters of apertures to allow collimation of the electron beam from a cathode. The main lens is operated to focus a parallel beam of electrons on a display screen. Methods for manufacturing by mechanical or semiconductor methods are also provided.

Abstract: Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams.