Abstract: Disclosed herein are methods for estimating a powder layer thickness in an additive manufacturing machine when forming a three-dimensional article layer by layer. The method comprises applying a first powder layer and selectively melting the first powder layer and thereafter measuring the temperature of the first powder layer at a plurality of times. The method further comprises providing a mathematical function giving a reference temperature as a function of time based on the measured temperatures of the first powder layer, applying a second powder layer on top of the first powder layer and measuring the temperature of the second powder layer at a predetermined time, and estimating the powder layer thickness of the second powder layer based on the measured temperature of the second powder layer and the reference temperature calculated by means of the mathematical function for the predetermined time point.

Abstract: A device for measuring magnetism of a permanent magnet material at a high temperature includes a laser device, a power controller, a light beam controller, a temperature controller, a magnetism measurement unit, temperature sensors, and electromagnet pole heads. The electromagnet pole heads are divided into an upper piece and a lower piece for clamping upper and lower surfaces of a sample. Heat absorbing sheets are respectively fixed on front and rear surfaces of the sample. Temperatures of the heat absorbing sheets are measured by the temperature sensors. The sample is heated by laser, and the temperature controller is used to adjust a ratio of light beams of the power controller and the light beam controller irradiating the heat absorbing sheets on the front and rear surfaces of the sample, thus adjusting the temperatures of the heat absorbing sheets. The magnetism of the sample is measured using the magnetism measurement unit.

Abstract: In an method for inspecting the coating of an electronic component, wherein the electronic component includes at least one electrical resistance element and wherein the layer thickness of at least one coating is determined thermographically, it is provided as essential to the invention that the electrical resistance element is contacted electrically, an electrical voltage is applied to the resistance element, the temperature of the electronic component in the area of the resistance element is captured as a function of time, and a conclusion is drawn about the layer thickness of the coating of the electronic component in the area of the resistance element based on the temperature variation over time.

Abstract: A system and method use electric potential measurements to locate and characterize passing projectiles, including advanced data processing methods to reject background noise and determine projectile speed, preferentially incorporating acoustic-based measurements to provide additional benefits.

Abstract: The present disclosure relates generally to a method of operating an inspection system, including a sensor and heating element operably coupled to a control module, to determine in-situ a coating integrity for a turbomachinery component within a turbomachinery system, the method comprising the steps of: placing the sensor and heating element at a distance from the desired turbomachinery component to be examine, operating the heating element for a predetermined amount of time, operating the sensor to detect an output from a surface of the turbomachinery component, and operating the control module to compare the output with at least one integrity parameter.

Abstract: A method for forming a silicon ingot includes the following steps: providing a silicon ingot of variable electrical resistivity and containing interstitial oxygen, determining the interstitial oxygen concentration in different areas of the silicon ingot, calculating the concentration of thermal donors to be created in the different areas to reach a target value of the electrical resistivity, and subjecting the different areas of the silicon ingot to annealing so as to form the thermal donors. The annealing temperature in each area is determined from the thermal donor and interstitial oxygen concentrations of the area and from a predefined annealing time.

Abstract: A temperature change of a device on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled considering inefficient heat removal from the backside of the chip. To perform such modeling, ratios of an imaginary heat amount to an actual heat amount for different locations on the IC chip must be predetermined using a test integrated circuit (IC) chip. During testing, one test device at one specific location on the test IC chip is selected to function as a heat source, while at least two other test devices at other locations on the test IC chip function as temperature sensors. The heat source is biased and changes in temperature at the heat source and at the sensors are determined. These changes are used to calculate the value of the imaginary heat amount to actual heat amount ratio to be associated with the specific location.

Abstract: Provided are a thermoelectric conductivity measurement instrument of a thermoelectric device and a measuring method of the same. The thermoelectric conductivity measurement instrument of the thermoelectric device includes a sample piece fixing module configured to provide an environment for measuring physical properties of the thermoelectric device as a sample piece and comprising an electrode part configured to provide contact points which are respectively in contact with both ends of the sample piece, and a measuring circuit module configured to provide a source AC voltage of a first frequency heating the sample piece to the electrode part, detect a first thermoelectric AC voltage of a second frequency greater than the first frequency and a second thermoelectric AC voltage of a third frequency greater than the second frequency, which are generated by a temperature change occurring at the contact points, and then obtain the thermoelectric conductivity.

Abstract: A method for determining the oxygen concentration of a sample made of a semiconductor material includes a heat treatment step of the sample to form thermal donors, the measurement of the resistivity in an area of the sample, the determination of the thermal donor concentration from a relation expressing the charge carrier mobility according to an ionized dopant impurity concentration, by adding to the dopant impurity concentration four times the thermal donor concentration, and from the measured resistivity value. The method finally includes determining the oxygen concentration from the thermal donor concentration.

Abstract: A mass flow controller (MFC), a method for calibrating an MFC, and a method for operating an MFC are disclosed. The method for calibrating the MFC includes obtaining data relative to two signals from a thermal mass flow sensor when operating the mass flow controller at different flow rates with a calibration gas, and storing the data relating to the two signals in connection with corresponding flow-rate values. The method for operating the MFC includes obtaining data relative to the two signals from the thermal mass flow controller and accessing the calibration data to determine an unknown flow rate for a process gas that may be the same gas as the calibration gas or may be another gas that is different from the calibration gas.

Abstract: A method with the following steps is described for testing a Peltier element: applying a voltage to the Peltier element; switching off the voltage at the end of a defined period of time; measuring the voltage at the Peltier element; and comparing the measured voltage with a reference value. Furthermore, a small electrical appliance, such as an electric shaver, with a Peltier element is described, which small electrical appliance has a safety device which ensures that a malfunction of the Peltier element cannot result in danger to the user.

Abstract: An explosive and narcotics detection system detects the presence of trace particles of those materials that are adhering to surfaces. The particles are removed from the surface, transported and collected in a particle collection medium, and then provided to detection instrument. Narcotics and explosive particles are often bound tenaciously to the surface, and simple techniques, such as blowing air, will either remove only the largest particles or none at all. Techniques for the removal of narcotics and explosives particles are described which utilize an aerosol mixture of aerosol particles in a gas stream to impact and more efficiently remove the target narcotics and explosives particles from the surface.

Abstract: A power sensor includes a substrate, an aperture within the substrate, a membrane formed over at least a portion of the substrate and extending over the aperture, and an electro-thermal transducer partially supported by the insulating membrane. The electro-thermal transducer includes an impedance matched, bifurcated load supported over the aperture by the insulating membrane, and a thermopile extending over the aperture and supported by the insulating membrane, the thermopile being adapted to generate a voltage in response to heat generated in the impedance matched, bifurcated load. A signal conductor is electrically connected with one end of the impedance matched, bifurcated load to guide electromagnetic signals to the load, and a conductive under-layer stratified from the signal conductor by an intermediary dielectric is connected with an opposite end of the impedance matched, bifurcated load to act as a ground plane.

Abstract: The present invention provides a novel complex oxide capable of achieving high performance as a p-type thermoelectric material. The complex oxide comprises a layer-structured oxide represented by the formula BiaPbbM1cCOdM2eOf wherein M1 is one or more elements selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Ca, Sr, Ba, Al, Y, and lanthanoids; M2 is one or more elements selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Mo, W, Nb, Ta, and Ag; 1.8?a?2.5; 0?b?0.5; 1.8?c?2.5; 1.6?d?2.5; 0?e?0.5; and 8?f?10; and at least one interlayer component selected from the group consisting of F, Cl, Br, I, HgF2, HgCl2, HgBr2, HgI2, TlF3, TlCl3, TlBr3, TlI3, BiF3, BiCl3, BiBr3, BiI3, PbF2, PbCl2, PbBr2, and PbI2. The interlayer component being present between layers of the layer-structured oxide.

Abstract: The present invention provides a cell or stack for evaluating the performance of a fuel cell and a method of evaluating the performance of the fuel cell using the cell or stack, in which a semiconductor thermoelectric device, attached to the side surface of the unit cell or stack of the fuel cell, is provided so as to evaluate the performance of the fuel cell in an environment in which temperature is maintained at a uniform temperature. According to the present invention, the temperatures of an anode and a cathode of the fuel cell can be precisely changed or maintained. Further, the performance of the fuel cell can also be measured in sub-zero temperature conditions without requiring a separate environmental chamber. A rate of temperature decrease, at which the temperature decreases to a certain sub-zero temperature, or a rate of temperature increase can be precisely controlled.

Abstract: A power sensor comprises a substrate, an insulating membrane associated with the substrate, and an electro-thermal transducer partially supported by the insulating membrane. The electro-thermal transducer includes an impedance matched load spaced from the substrate by the insulating membrane, and a thermopile partially spaced from the substrate by the insulating membrane and partially arranged on the substrate, the thermopile being adapted to generate, a voltage in response to heat generated in the impedance matched load. An electrically conductive member connected with the impedance matched load to guide electromagnetic signals to the electro-thermal transducer.

Abstract: A method and apparatus for measuring the temperature of a gas in a mass flow controller is described. One embodiment derives gas-temperature information from a mass flow sensor of the mass flow controller without relying on a separate temperature sensor. This embodiment supplies a substantially constant electrical current to a thermal mass flow sensor of the mass flow controller, the thermal mass flow sensor being designed to measure a mass flow rate of the gas; measures an input voltage of the thermal mass flow sensor to obtain a present input voltage, the input voltage varying with a temperature differential between a pair of sensing elements of the thermal mass flow sensor; calculates an adjusted input voltage by accounting for a component of the present input voltage that is dependent on the mass flow rate of the gas; and calculates the temperature of the gas based on the adjusted input voltage.

Abstract: Systems and methods are described for transmitting a waveform having a controllable attenuation and propagation velocity. An exemplary method comprises: generating an exponential waveform, the exponential waveform (a) being characterized by the equation Vin=De?ASD[x?vSDt], where D is a magnitude, Vin is a voltage, t is time, ASD is an attenuation coefficient, and vSD is a propagation velocity; and (b) being truncated at a maximum value. An exemplary apparatus comprises: an exponential waveform generator; an input recorder coupled to an output of the exponential waveform generator; a transmission line under test coupled to the output of the exponential waveform generator; an output recorder coupled to the transmission line under test; an additional transmission line coupled to the transmission line under test; and a termination impedance coupled to the additional transmission line and to a ground.

Abstract: An integrated microstructure sensor element is proposed for detecting thermodynamic measured variables of a fluid. To that end, a supporting body, particularly a board or a wafer having at least one microstructured heating element in contact with the fluid during operation, is provided, on which or in whose vicinity are arranged first arrangement for at least intermittently acting on the heating element with an electric alternating current of defined frequency or a defined frequency band, as well a second arrangement for detecting the amplitude of the third harmonic wave of the electric voltage applied to the heating element. The proposed microstructure sensor element in the form of a compact, integrated component is suitable in particular for determining or monitoring the thermal conductivity and/or the thermal capacity of a fluid, particularly an oil in a motor vehicle.

Abstract: In a method for qualifying an electric circuit having at least one contact, a reference function of thermoelectric voltage versus time of a faultless electric circuit is provided. The circuit is heated by at least one measuring electric impulse. Thermoelectric-voltage-versus-time data of the electric circuit is acquired. The circuit is qualified based on the differences between the acquired data and the reference function. Additionally, in a method for localizing a weak or bad contact of an electric circuit, the circuit is heated by at least one measuring electric impulse, and thermoelectric-voltage-versus-time data of the circuit is acquired. The acquired data is then compared to reference functions of thermoelectric voltage versus time data of known circuits with weak or bad contacts. The weak or bad contact of the circuit is localized in accordance with the similarities between the acquired data and the reference functions.

Abstract: A present invention provides real-time temperature and power mapping of fully operating electronic devices. The method utilizes infrared (IR) temperature imaging, while an IR-transparent coolant flows through a specially designed cell directly over the electronic device. In order to determine the chip power distributions the individual temperature fields for each heat source of a given power and size on the chip (as realized by a scanning focused laser beam) are measured under the same cooling conditions. Then the measured chip temperature distribution is represented as a superposition of the temperature fields of these individual heat sources and the corresponding power distribution is calculated with a set of linear equations.

Abstract: A three dimensional atom probe comprising a sharp specimen (10) coupled to a mounting means (12) where emission of charged particles is caused by application of a potential to the specimen tip (10) such that charged particles are influenced by filtering electrodes (206, 204) before impingement on a detection screen (202).

Abstract: The presence of trace molecules in air is often determined using high sensitivity gas sensing instruments, such as an ion mobility spectrometer. Such devices are commonly utilized in the fields of explosives detection, identification of narcotics, and in applications characterized by the presence of very low airborne concentrations of organic molecules of special interest. The sensitivity of such instruments is dependent on the concentration of target gas in the sample. The sampling efficiency can be greatly improved when the target object is warmed, even by only a few degrees. A directed emission of photons in the range between infrared and ultraviolet light can be used to significantly enhance vapor emission.

Abstract: A sensing system includes a ring oscillator that emits electromagnetic radiation at a characteristic frequency. The ring oscillator comprises an odd number plurality of inverters that are electrically connected in series. The sensing system also comprises a temperature stabilized voltage source that is used to supply voltage to the inverters of the ring oscillator. A sensing load for sensing a change in a preselected environmental condition is operably connected to the ring oscillator. When the load senses the preselected environmental condition, the sensing load alters the characteristic frequency of the ring oscillator and hence the electromagnetic radiation as emitted by the ring oscillator. A pick-up antenna receives the electromagnetic radiation as emitted by the ring oscillator and detection electronics, operably coupled to the pick-up antenna, measure the frequency of the electromagnetic radiation as received by the pick-up antenna.

Abstract: A test structure for testing a thick film thermoelectric device is presented. The test structure is able to test the thermoelectric device in the device's three modes of operation, namely as a cooling device, as a heat pump, and as a power generator. The test structure includes a pair of current electrode blocks for supporting and supplying power from a power supply to the thick film thermoelectric device being tested. Thermocouples are attached to different portions of the thick film thermoelectric device to indicate the temperature change across the device as it is being tested. Additionally, a heat source is provided when the device is being tested in an electrical generation mode. The test structure is able to compensate for the expansion and contraction of the thick film thermoelectric device during the testing. By way of the disclosed test structure, the thick film thermoelectric devices can be tested and characterized.

Abstract: In a sample assembly for a thermoelectric analyzer, typically TSC (Thermally Stimulated Current) analyzer, a sample is fixed to an electrically-insulating substrate via an adhesive layer. The material of the adhesive layer is indium or gold-tin alloy. The substrate has a pair of junction electrode layers formed thereon and a pair of electrode layers formed on the same plane of the sample. One of the electrode layers is connected with one of the junction electrode layers by electrically-conductive wire, while the other of the electrode layers is connected with the other of the junction electrode layers by another electrically-conductive wire. The substrate is made of preferably made of a highly electrically-insulating and highly thermally-conductive material which may be, for example, aluminum nitride (AlN), boron nitride (BN), beryllium oxide (BeO) or aluminum oxide (Al2O3). The sample may preferably be a compound semiconductor such as GaAs.

Abstract: This invention provides a complex oxide comprising the features of : (i) being represented by the formula:(A0.4B0.1M0.1)x/0.6Co2Oy wherein A and B are elements differing from each other, each represents Ca, Sr or Ba, M represents Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, 1.7≦x≦2, and 3.8≦y≦5, (ii) having a Seebeck coefficient of 100 &mgr;V/K or more at a temperature of 100 K (absolute temperature) or higher and (iii) having an electrical resistivity of 10 m&OHgr;cm or less at a temperature of 100 K (absolute temperature) or higher. The complex oxide of the invention is a material composed of low-toxicity elements existing in large amounts, the material having superior heat resistance and chemical durability and a high thermoelectric conversion efficiency in a temperature range of 600 K or higher which falls in the temperature range of waste heat.

Abstract: A method for welding parts using the thermo-electrical output of the metals to be welded to control and evaluate the welding process in which a single energy pulse, such as an electric current or a laser, containing a known amount of electricity is applied to the metals to heat the metals to be welded. Then the thermo-electric output of the metals to be welded is used to determine the mass of the metals. The energy necessary to effectively weld the metals is then determined as a function of the mass.

Abstract: A heat capacity C1 is obtained by conducting two-dimensional thermal analysis simulation to the cross-section of a wiring. Next, based on one-dimensional approximate equation of &thgr;0=(Q0/2) (&lgr;·SC1)−½ along a wiring length direction, a wiring temperature rise &thgr;0 in the void is obtained. In the expression, &thgr;0 is a rise in wiring temperature in the void, Q0 is a thermal quantity of the void in the wiring, &lgr; is a heat conductivity of the wiring and S is a cross-sectional area of the wiring. The heat capacity C1 may be obtained from an expression C1=&lgr;′{(w/t)+(2.80/1.15) (h/t)0.222}. In the expression, W is wiring width, h is wiring thickness, t is substrate film thickness and &lgr;′ is the heat conductivity of the substrate film. By so obtaining, it is possible to shorten analysis time, to save the capacity of a memory and that of a disk for use in calculation, to obtain a simpler analysis model and to facilitate creating a mesh.

Abstract: A method and apparatus for measuring and characterizing microscopic thermoelectric material samples using scanning microscopes. The method relies on concurrent thermal and electrical measurements using scanning thermal probes, and extends the applicability of scanning thermal microscopes (SThMs) to the characterization of thermoelectric materials. The probe makes use of two thermocouples to measure voltages at the tip and base of a cone tip of the probe. From these voltages, and from a voltage measured across the sample material, the Seebeck coefficient, thermal conductivity and resistance of the sample material can be accurately determined.

Abstract: A device for testing a material that changes shape when an electric and/or magnetic field is applied, in particular a piezoactive material, having a generator to generate an electric field and/or a magnetic field is described. This permits a rapid characterization of the material and at the same time can be implemented with a much lower structural complexity. This is achieved by the fact that at least one thermal sensor is provided for detecting a change in temperature of the material.

Abstract: A thermoelectric piece has an increased adhesive strength between a semiconductor matrix of Bi--Sb--Te or Bi--Te--Se and a diffusion barrier layer deposited thereon for blocking diffusion of a soldering material into the semiconductor matrix. An Sn-alloy layer is provided between the semiconductor matrix and the diffusion barrier layer of Mo, W, Nb and Ni to give the enhanced adhesive strength. The Sn-alloy is formed at the interface with the semiconductor matrix by interdiffusion of Sn with at least one element of the semiconductor. It is found that Sn will not lower the thermoelectric characteristics when diffusing into the semiconductor matrix and provides an sufficient adhesive strength to the metal elements of the diffusion barrier layer.

Abstract: The discharge capability of zinc oxide elements is determined. A current of a given energy quantity is allowed to flow through a zinc oxide element to generate heat. The element is photographed by a camera and the temperature distribution of the element is obtained from the photographed image. The maximum temperature and the minimum temperature are determined and simultaneously the distance l between the points which show both the temperatures is determined. The difference .DELTA.T between the maximum temperature and the minimum temperature is divided by the distance l to obtain an index .DELTA.T/l. The relation between the index and the discharge capability is previously obtained and this relation is stored in a memory. Using the stored relation, a discharge capability corresponding to the obtained index is obtained.

Abstract: The invention provides an apparatus for diagnosing a void within a conductive material for interconnections of semiconductor integrated circuits. A laser beam irradiating section is provided for supplying a thermal wave to interconnections of the semiconductor integrated circuits to cause a rise of a temperature of the conductive material due to a thermal accumulation around a void within the conductive material, the thermal wave supplying section being able to move in a plane for accomplishment of a scanning operation of the thermal wave supply. A voltage applying section is connected to the interconnections.

Abstract: Apparatus and method for segregating elongate cylindrical rods of undesirable alloy composition from rods having a desired alloy composition is disclosed. The apparatus includes a rod segregation table having an upper rod transport side for individually moving rods transversely in substantially parallel spaced relation across the table. A thermoelectric tester is positioned at an intermediate rod test position under the upper rod transport side of the table and includes two spaced electrodes maintained at different temperatures and being adapted and arranged to engage a rod as it is moved into the rod test position. A signal representative of the thermoelectrically induced voltage in the rod between the electrodes is generated and compared to a predetermined value. An offset drive signal is generated when the signal representative of the induced thermoelectric voltage is different from the predetermined value.

Abstract: A method for detecting wear of a cutting tool for cutting a workpiece measures the contact resistance between the cutting tool and the workpiece for detecting wear of the cutting tool from a change in the contact resistance, whereby such wear of the cutting tool can be reliably and accurately measured.

Abstract: A detector system (10) especially suited for detecting a halogen containing component in a gas stream includes a gas chromatograph (12), which is connected by gas line (13) to pyrolysis chamber (14). Sources (16) of additional gas streams are connected by a gas line (18) to the pyrolysis chamber (14). The detector electrodes in the pyrolysis chamber (14) are electrically connected to detector electronics (20) by line (22). A temperature control circuit (24) is electrically connected to heater (26) by line (28). Heater (26) is thermally coupled to the pyrolysis chamber (b 14) at (30). The pyrolysis chamber (14) is thermally coupled to thermocouple (32) at (34). The thermocouple (32) is electrically connected to the temperature control circuit (24) by line (36). The heater (26) is independent of the detector electrodes and maintains a temperature between about 700 degrees and 1000 degrees Centigrade. The detector electrodes are substantially alkali metal free.

Abstract: A system for non-destructively determining the thickness of a coating on a metal substrate includes using a first probe to locally heat the coating so as to establish a temperature gradient therein. The probe is configured so as to also provide electrical contact to the coating surface. This first probe is formed from a material having high thermal conductivity, and is at least partially plated with a material having high resistance to oxidation. Preferably, the probe plating material is chosen to also have high resistance to mechanical wear. The testing system also includes an electrical power supply for controllably heating the first probe in order to maintain the temperature thereof at a constant predetermined value. A second probe provides an electrical return contact in order to form a circuit for measuring the thermoelectric voltage between the two probes. This thermoelectric voltage may be conveniently measured by an AC amplification circuit.

Abstract: A non-destructive testing device and method in which information is obtained from a plurality of thermoelectric junctions made between an unknown material and a plurality of test elements of different known characteristics to provide data for identifying the unknown material.

Abstract: Apparatus for identifying the metal alloy composition of a test piece. Two thermoelectric probes are brought into contact with the test piece. Both of the probes are heated, one of which is heated to a predetermined temperature greater than the temperature of the other probe. The probes comprise electrodes of a thermally conductive material having in thermoelectric contact therewith, respective thermoelectric circuits having differing predetermined thermoelectric characteristics. A variable voltage divider electrically couples the respective thermoelectric circuits of the two probes. The output terminals of the voltage divider networks are connected in series opposition through a null meter or indicator which displays the test result. The voltage divider networks of the respective probes are mechanically or electrically slaved such that they are adjusted in synchronism, thereby desensitizing the apparatus to changes in test temperature, ambient temperature or the temperature of the respective test pieces.

Abstract: A device for investigating surface phenomena by field emission contains an emission point in an evacuatable enclosure facing a fluorescent screen. The point is desorbed by a first pulse which produces sufficient heating of the point to attain substantially complete desorption and field emission or field desorption is produced by a second pulse spaced a controllable time after the desorption pulse. Repetitive measurements are possible by producing a train of the first and second pulses during which parameters can be varied and the results observed. Methods are disclosed for determining the temperature of the point from the measured field emission both by relating field emission to temperature and by relating temperature to desorption.