Abstract: The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to a first set of sensing blocks of the plurality of sensing blocks; and a second switching element connecting to a second set of sensing blocks of the plurality of sensing blocks.

Abstract: A method of determining of a true time of arrival of an energy pulse in a positioning system using arrivals times of such pulses at a device after emission of the pulses from respective transmitters. A sampled signal is cross-correlated with the expected form of the energy pulse from the transmitter, and a highest peak in the correlated signal is located and selected to represent a possible time of arrival of the energy pulse. A sequentially preceding peak in the correlated signal is then selected has its magnitude compared with a threshold. This step is repeated until the magnitude of the currently selected peak is less than the threshold, at which point the last-selected peak whose magnitude exceeded the threshold marks the true time of arrival. This process avoids false time of arrival readings caused by reflected pulses.

Abstract: A magnetic field sensor has an error correction signal generator circuit to inject an error correction signal into a primary signal channel to cancel an error signal component in the primary signal channel.

Abstract: A memory device used with a relaxed timing requirement specification according to temperatures, an operation method thereof, and a memory controller and a memory system using the memory device are provided. The memory device has a first timing characteristic at a first temperature and a second timing characteristic that is longer than the first timing characteristic at a second temperature. If a temperature of the memory device is higher than a reference temperature, the memory controller controls the first timing characteristic as a timing requirement specification of the memory device. If the temperature of the memory device is lower than the reference temperature, the memory controller controls the second timing characteristic as the timing requirement specification of the memory device.

Abstract: Systems and methods pertain to avoiding undesirable current paths or sneak paths in spintronic logic gates formed from Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) elements. Sneak path prevention logic is coupled to the GSHE MTJ elements, to prevent the sneak paths. The sneak path prevention logic may include one or more transistors coupled to the one or more GSHE MTJ elements, to restrict write current from flowing from an intended pipeline stage to an unintended pipeline stage during a write operation. The sneak path prevention logic may also include one or more diodes coupled to the one or more GSHE MTJ elements to prevent a preset current from flowing into input circuitry or a charge current generation circuit. A preset line may be coupled to the one or more GSHE MTJ elements to divert preset current from flowing into unintended paths.

Abstract: A semiconductor system includes a controller and a semiconductor device. The controller receives a temperature signal including information on temperature variation to generate an auto-refresh signal. The semiconductor device generates the temperature signal and controls an amount of electric charges discharged from an internal node according to temperature variation to generate a periodic signal including pulses sequentially created. The semiconductor device also receives the periodic signal or the auto-refresh signal to perform a refresh operation.

Abstract: A polarized light detection system includes a detection apparatus, a power source, and a photoresistor. The detection apparatus, power source and photoresistor are electrically connected with wires to form a galvanic circle. The photoresistor includes a photosensitive material layer with a first surface and a second surface opposite to each other, a first electrode layer located on the first surface of the photosensitive material layer, and a second electrode layer located on the second surface of the photosensitive material layer. The first electrode layer includes a carbon nanotube film structure.

Abstract: A method for detecting polarized light is disclosed. Providing a polarized light detection system including a photoresistor, a power source and a detection apparatus. The photoresistor includes a first electrode layer and a photosensitive material layer. The detection apparatus includes a current detection device and a computer analysis system. An incident light is irradiated onto a surface of the photoresistor. Polarization information of the incident light is identified by the photoresistor. Current change in the photoresistor is detected by the current detection device. The polarization information of the incident light is analyzed by the computer analysis system.

Abstract: Aspects described herein are related to spintronic logic gates employing a Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) element(s) for performing logical operations. In one aspect, a spintronic logic gate is disclosed that includes a charge current generation circuit and a GSHE MTJ element. The charge current generation circuit is configured to generate a charge current representing an input bit set. The input bit set may include one or more input bit states for a logical operation. The GSHE MTJ element is configured to set a logical output bit state for the logical operation, and has a threshold current level. The GSHE MTJ element is configured to generate a GSHE spin current in response to the charge current and perform the logical operation on the input bit set by setting the logical output bit state based on whether the GSHE spin current exceeds the threshold current level.

Abstract: Aspects described herein are related to pipeline circuits employing a Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) element(s) for performing logical operations. In one aspect, a pipeline circuit is disclosed. The pipeline circuit includes a first pipeline stage and a second pipeline stage. The first pipeline stage is configured to store a first bit set and to generate a first charge current representing the first bit set. The second pipeline stage includes a first GSHE MTJ element. The first GSHE MTJ element is configured to set a first bit state for the first logical operation, and has a first threshold current level. The first GSHE MTJ element is configured to generate a first GSHE spin current in response to the first charge current. In this manner, the first GSHE MTJ element is also configured to perform the first logical operation on the first bit set.

Abstract: Systems and methods for a two lead electronic switch adapted to replace a mechanical switch are provided. In one embodiment, a method comprises, in an electronic switch having a sensor, an electronic circuit, a first terminal and a second terminal, receiving, by the electronic circuit, from the sensor, a sensed voltage proportional to an amount sensed by the sensor; operating the electronic circuit in a first state when the sensed voltage is greater than or equal to a threshold voltage associated with a threshold pressure sensed by the sensor; operating the electronic circuit in a second state when the sensed voltage is less than the threshold voltage associated with the threshold pressure sensed by the sensor; receiving, across the first terminal and the second terminal, an input voltage used to provide power for the electronic switch; and wherein the first terminal and the second terminal are also used to couple the electronic switch to a device.

Abstract: An electronic circuit includes a plurality of sensing elements configured to generate a plurality of sensing element signals. The electronic circuit also includes a control signal generator configured to generate a plurality of control signals. The electronic circuit also includes a combining circuit. The combining circuit includes a plurality of switching circuits. Each switching circuit is configured to generate a respective switching circuit output signal being representative of either a non-inverted or an inverted respective one of the plurality of sensing element signals depending upon the first state or the second state of a respective one of the plurality of control signals. The combining circuit also includes a summing circuit coupled to receive the switching circuit output and configured to generate a summed output signal corresponding to a sum of the switching circuit output signals.

Abstract: Pulses of signals in the terahertz region are generated using an apparatus made up of a mode-locked semiconductor laser diode with a short duty cycle that is optically coupled to a biased Auston switch. The output from the mode-locked semiconductor laser diode may first be supplied to a pulse compressor, and the resulting compressed pulses supplied to the Auston switch. Preferably, the mode-locking of the semiconductor laser diode is controllable, i.e., it is an active mode-locking semiconductor laser, so that the phase of the output optical signal from the laser is locked to the phase of an input control signal.

Abstract: A system for operating a transducer comprising, a first node connected to a first transducer, a first photo-activated switching device having a first source, a first drain connected to the first node, and a first gate operative to receive a first logic signal, a first terminal connected to the first source; a second photo-activated switching device having a second source connected to the first node, a second drain, and a second gate operative to receive a second logic signal, and a second terminal connected to the second drain.

Abstract: The test circuit according to the present invention includes: a plurality of light-receiving elements; a plurality of amplifiers, each of which converts, into a voltage, a photoelectric current supplied from one of the light-receiving elements; and an electric current supplying unit which supplies an electric current to each of the light-receiving elements and each of the amplifiers.

Abstract: Majority voting between triple redundant integrated circuits is used in order to provide an SEU hardened output signal. Accordingly, an input signal is processed in a predetermined manner to provide a first signal, the input signal is processed in the same manner to provide a second signal, and the input signal is also processed in the same manner to provide a third signal. A majority vote is taken between the first, second, and third signals by an SEU immune majority voter circuit, and an output signal is provided corresponding to the majority vote.

Abstract: Majority voting between triple redundant integrated circuits is used in order to provide an SEU hardened output signal. Accordingly, an input signal is processed in a predetermined manner to provide a first signal, the input signal is processed in the same manner to provide a second signal, and the input signal is also processed in the same manner to provide a third signal. A majority vote is taken between the first, second, and third signals by an SEU immune majority voter circuit, and an output signal is provided corresponding to the majority vote.

Abstract: A device for converting a current pulse signal into a voltage pulse signal through a conversion from a current to a voltage includes a converting unit converting the current pulse signal into a first voltage signal, a voltage reducing unit generating a second voltage signal by reducing a magnitude of the first voltage signal, a delay unit generating a third voltage signal by delaying the second voltage signal, and a comparison unit generating the voltage pulse signal by comparing the first voltage signal with the third voltage signal.

Abstract: A self-calibration circuit for sensors and transducers that produce pulse-train outputs of the type having a count-until-disabled counter (250) which counts the number of pulses corresponding to a known value of the sensed or transduced quantity in a variable frequency pulse train during the time that a known number of pulses are counted in a reference pulse train by a frequency divider (210); the count accumulated by the count-until-disabled counter being stored, after accumulation, in a settable-divisor frequency divider (220 or 240) which can provide both calibrated sensor pulse-train outputs and calibration pulse-train outputs having the same frequency as the calibrated sensor pulse-train output at known values of the sensed parameter.

Abstract: A laser light detector is provided which can be used to detect pulsed laser light that is produced by a rotating laser light source on a construction job site. The laser light detector provides an easily-read display which is indicative of the present level or elevation of the laser light detector with respect to the plane of rotating laser light. The laser light detector has a very large dynamic range, while maintaining a very good signal-to-noise ratio, and can, therefore, be used at both short and long distances from the rotating laser light source. The laser light detector is not dependent upon the energy level received of laser light, or by the spot size of laser light as it reaches the light detectors. Multiple discrete steps of elevation indication are provided, which can easily be increased to a larger number of discrete steps, if so desired. The laser light detector is available with several options, including dead band adjustment, normal or offset on-grade displaying, and averaging.

Abstract: A method of clocking integrated circuit chips. A pulsed laser striking an integrated circuit module substrate is diffused through the substrate and exits the opposite surface as diffused light pulses. An integrated circuit chip mounted on the top surface of the substrate has optical receivers. The optical receivers receive pulsed energy from the diffused light pulses, converting pulsed light to electrical pulses that clock the chip.