Abstract: A circuit for driving a power switch is presented. The circuit includes a first power switch coupled to a second power switch via a switching node and a driver coupled to the first power switch, where the driver contains an energy storing element coupled to the switching node. The circuit also contains a sensor to sense an electrical parameter of the driver and a charger coupled to the sensor. The charger provides a charge current to charge the energy storage element, and to control the charge current based on the electrical parameter. In particular, a circuit for driving a power switch based on a III/V semiconductor is presented. In addition, a method of powering a power switch driver is presented. The method includes sensing an electrical parameter of the driver and adjusting a current to charge the energy storing element based on the electrical parameter.

Abstract: An electrical circuit arranged in a half bridge topology. The electrical circuit includes a high side transistor; a low side transistor; a gate driver and level shifter electrically coupled to a gate of the high side transistor; a gate driver electrically coupled to a gate of the low side transistor; a capacitor electrically coupled in parallel with the gate driver and level shifter; a voltage source electrically coupled to an input of the gate driver and level shifter and an input of the gate driver; and, a bootstrap transistor electrically coupled between the voltage source and the capacitor. A GaN field-effect transistor is synchronously switched with a low side device of the half bridge circuit.

Abstract: A rectifier comprising a chain of transistors for RF-DC conversion. In order to compensate for the thresholds of the transistors, each transistor can be connected to a junction earlier or later in the chain. By using both p-type and n-type transistors in the same chain, the different types of transistors can be compensated in different directions allowing more transistors to be compensated. Additional transistors connected to the gates of transistors of the main chain can allow the transistors of the main chain to be forward compensated at one part of the input cycle and backward compensated in another part to minimize both the voltage threshold of the rectifier and the leakage current. The line for compensation of the voltage threshold during forward conduction can comprise a solid line or a transistor, and if a transistor is used it may be diode-connected.

Abstract: Systems and methods for providing differential line drivers include a device having an input configured to receive an input signal and a driver circuit configured to generate a first output and a second output from the input signal. The second output is a complementary output to the first output, wherein the first output has a first transfer characteristic and the second output has a second transfer characteristic different than the first transfer characteristic. The first and second transfer characteristics include an offset from respective input values of the input signal. The device further includes an output configured to output as a differential signal the first output and the second output generated by the driver circuit, wherein the offset in the first and second transfer characteristics defines a fail-safe output state for the differential signal.

Abstract: A receiving circuit for a core circuit is provided and includes a first receiving-path unit. The first receiving-path unit is capable of receiving an input signal and outputting an output signal to the core circuit according to the input signal. The first receiving-path unit includes an input buffer which is capable of operating in a core power domain of the core circuit and receiving a first clamped signal. When a level of the input signal is substantially equal to or lower than a first predetermined voltage level, the input signal is passed to the input buffer to serve as the first clamped signal, and the input buffer is capable of outputting the output signal in the core power domain according to the first clamped signal. When the level of the input signal is higher than the first predetermined voltage level, the input signal is not passed to the input buffer.

Abstract: A semiconductor device includes a power gating unit, a combinational logic unit and a clamping unit. The power gating unit is turned on to output an internal signal at an output electrode based on an input signal or turned off according to operation modes. The combinational logic unit includes an input electrode directly connected to the output electrode of the power gating unit through a data line, and generates an output signal based on the internal signal received through the data line. The clamping unit is turned on to clamp the internal signal at a logic high level or at a logic low level or turned off according to the operation modes. The semiconductor device clamps the output electrode of the power gating unit without degrading an operation speed of the semiconductor device.

Abstract: A half-bridge power circuit comprises a first gallium nitride field effect transistor (GaN FET); a first driver coupled to a gate of the first GaN FET; an anode of a capacitor coupled to an output of the driver and a source of the first GaN FET; a diode having a cathode coupled to the cathode of the capacitor; and a bootstrap capacitor clamp (BCC) controller, including: a field effect transistor (FET) coupled to an anode of the diode, and a comparator coupled to a gate of the FET, the comparator configured to receive as inputs: a) a signal representative of an input voltage (VDRV) applied to the FET; b) a ground; c) a boot signal representative of a voltage at the anode of the capacitor (Boot); and d) a signal representative of a voltage at the source of the first GaN FET (SW).

Abstract: A combined bandgap generator and temperature sensor for an integrated circuit is disclosed. Embodiments of the invention recognize that bandgap generators typically contain at least one temperature-sensitive element for the purpose of cancelling temperature sensitivity out of the reference voltage the bandgap generator produces. Accordingly, this same temperature-sensitive element is used in accordance with the invention as the means for indicating the temperature of the integrated circuit, without the need to fabricate a temperature sensor separate and apart from the bandgap generator. Specifically, in one embodiment, a voltage across a temperature-sensitive junction from a bandgap generator is assessed in a temperature conversion stage portion of the combined bandgap generator and temperature sensor circuit. Assessment of this voltage can be used to produce a voltage- or current-based output indicative of the temperature of the integrated circuit, which output can be binary or analog in nature.

Abstract: An impendence tuning apparatus is disclosed. The impendence tuning apparatus includes an operation amplifier, a reference resistor, a tuned resistor, a switching module, a current generator, a current detector and a controller. A first input terminal of the operation amplifier receives a basic voltage and the second terminal of the operation amplifier coupled to a first end. The switching module receives a control and coupled the first end to the tuned resistor or the reference resistor accordingly for generating a tuned current or a reference current separately. The current generator receives and mirrors the reference current or the tuned current to generate a first current and a second current. The current detector receives the first and the second currents and outputs current values the first and the second currents to the controller. The controller tunes an impendence of the tuned resistor according to the first and the second currents.

Abstract: A radio receiver includes a down-converter 110 for receiving a radio multiplexed signal containing a first signal and a second signal, multiplying the first signal and the second signal by a mixer 104 to thereby down-convert the radio multiplexed signal and generate an intermediate frequency signal 5e. The mixer 104 has a control section for controlling an operating bias of the mixer 104 in response to a signal strength of at least either one of the first signal or the second signal. Thus, the dynamic range of the mixer can be widened so that stable image characteristics can be obtained over a wide range of transmission distance.

Abstract: A current source device that cuts off an output current when stopped and obtains a desired output current upon start-up includes a first circuit having a first FET and resistors in series, a second circuit having second and third FETs in series with a point between the second and third FETs and a gate of the third FET connected, a drive circuit supplying a common drive voltage to gates of the first and second FETs, and first and second current source circuits responsive to first and second drive voltages that are gate voltages of the second and third FETs. The first and second current source circuits respectively include first and second current source FETs having the first and second drive voltages as gate voltages, and a start-up circuit changing the first and second drive voltages forcedly when the first and second current source FETs are made conductive.

Abstract: Disclosed herein is a control voltage generation circuit including: a reference voltage generation circuit adapted to generate a reference voltage; and a voltage conversion circuit adapted to generate, based on the reference voltage, a control voltage to be supplied to the gate of a clamping transistor connected between a bit line and a sense amplifier to adjust the voltage of the bit line, wherein the voltage conversion circuit outputs a voltage, which is the sum of a voltage proportional to the reference voltage and a voltage equivalent to the threshold voltage of the clamping transistor, to the gate of the clamping transistor as the control voltage.

Abstract: Disclosed is an output circuit that receives an input signal and that outputs a pre-emphasized output signal when an input signal transitions. The output circuit comprises a transistor applying de-emphasis to the output signal and a de-emphasis level control circuit comprising another transistor controlling a de-emphasis level. The transistor applying de-emphasis and the transistor controlling a de-emphasis level are connected in common to a current source and transistor controlling a de-emphasis level is made conductive at a time of de-emphasis to limit a current flowing through the transistor applying de-emphasis to the output signal.

Abstract: A reference voltage generating circuit includes a current generating section, a voltage generating section, a voltage dividing circuit, and a synthesis section. The current generating section generates a first current having a positive temperature coefficient. The voltage generating section generates a voltage having a negative temperature coefficient. The voltage dividing circuit divides the voltage of the negative temperature coefficient, generated by the voltage generating section. The synthesis section generates a voltage which is the sum of a terminal voltage obtained on causing the first current through a resistor and a voltage obtained on dividing the voltage having the negative temperature coefficient by the voltage dividing circuit, and outputs the sum voltage generated as a reference voltage.

Abstract: An active over-voltage clamp system includes at least one over-voltage detector that is responsive to an input voltage and provides a first current. The system also includes a replica over-voltage circuit that provides a second current, and circuitry subtracting the second current from the first current to produce a difference current. The system further includes a differential clamp activated in response to the difference current. The differential clamp prevents the input voltage from increasing beyond a target voltage.

Abstract: A system and method is disclosed for providing communication of an over-current protection signal and current mode control signals between a controller chip and a power chip in an integrated circuit device that comprises a plurality of integrated circuit chips. The controller chip sends pulse width modulation signals and a reference current signal to the power chip. Current flow status detection circuitry in the power chip detects a current flow status in the power chip and provides a current flow status signal to the controller chip. The current flow status signal may comprise an over-current protection signal or current mode control signals. One advantageous embodiment of the invention comprises a switch mode power supply integrated circuit.

Abstract: In one embodiment, an error amplifier of a power supply controller is configured to receive a current sense signal prior to the current sense signal undergoing amplification.

Abstract: There is provided a buffer circuit that outputs a signal according to an input signal. The buffer circuit includes a first receiving transistor that receives the input signal through its base terminal, a first clamp transistor having polarity same as that of the first receiving transistor, of which an emitter terminal and a collector terminal are connected to corresponding terminals of the first receiving transistor and which receives a first clamp voltage restricting a signal level output from the buffer circuit through its base terminal, and a first current defining section that is commonly provided for the first receiving transistor and the first clamp transistor and defines a total amount of emitter currents flowing into the first receiving transistor and the first clamp transistor. The buffer circuit outputs an output signal according to an emitter voltage of the first receiving transistor.

Abstract: A semiconductor device includes a differential level converter circuit that receives a first signal and outputs a second signal of greater amplitude. The differential level converter has a first MISFET pair for receiving the first signal, a second MISFET pair for enhancing the withstand voltage of the first MISFET pair, and a third MISFET pair with cross-coupled gates for latching the second signal from output. The film thickness of the gate insulating films of the second and third MISFET pairs is made thicker than that of the first MISFET pair, and the threshold voltages of the first and second MISFET pairs are made smaller than that of the third MISFET pair. This level converter circuit operates at high speed even if there is a large difference in the signal amplitude before and after level conversion.

Abstract: A method and/or a system of control signal synchronization of a scannable storage circuit is disclosed. In one embodiment, a system includes a first circuit to operate based on a first voltage of a first power supply, a second circuit to operate based on a second voltage of a second power supply, a level shifter circuit between the first circuit and the second circuit to translate between the first voltage of the first power supply and the second voltage of the second power supply, and a n-channel metal-oxide semiconductor field-effect transistor (nMOSFET) having a gate input of the second voltage and serially coupled in a fall path of the level shifter circuit to increase a rate of a capacitive discharge such that the rate of a capacitive discharge charge is substantially equal to a rate of a capacitive charge (e.g., the fall delay may also increase a bit because of an extra transistor).

Abstract: A semiconductor apparatus comprises a resistor formed in a driver to connect a driving device to a transmission line connecting the driver to a receiver. The resistor has resistance considerably larger than on-state resistance of the driving device on condition that the resistor matches output impedance of the driver with impedance of the transmission line. The transmission line has length decided so that a reflected wave from a receiver-side end of the transmission line reaches the driver while a driving signal supplied to the driver has a logical high or low level.

Abstract: A level shift circuit includes first and second inverters and an inversion circuit. The first inverter has a first input terminal and a first output terminal for generating the output signal. The first inverter includes a first transistor having a first current driving capacity. The second inverter has a second input terminal connected to the first output terminal and a second output terminal connected to the first input terminal. The second inverter includes a second transistor having a second current driving capacity smaller than the first capacity. The inversion circuit has an output terminal connected to the first input terminal. The inversion circuit receives an input signal including a first input signal and a second input signal one of which is a one-shot pulse signal. The inversion circuit includes a third transistor having a third current driving capacity smaller than the first capacity and larger than the second capacity.

Abstract: A circuit for converting an input signal at a first voltage level to an output signal at a second voltage level uses only thin oxide transistors. The circuit includes a first unit operating at a first power supply voltage and receiving the input signal, a second unit operating at a second power supply voltage, and a third unit coupling the first unit to the second unit. The third unit enables generation of the output signal. Use of an extra fabrication mask for thick oxide transistors is avoided by using only thin oxide transistors.

Abstract: The present invention provides a Driver circuit having dynamically adjusting output current and limiting input current function. This present invention dynamically adjusts the output current provided by the driver unit to reduce this output current in real time. A protection circuit is also provided to limit the input current supplied to the driver unit. This present invention avoids overdriving the driver unit.

Abstract: An output buffer is provided in the form of a voltage follower having a positive input that receives a reference voltage, a negative input and an output coupled together, and a control input that turns the voltage follower on and off. The output is coupled to one side of a load. The output buffer may have one or more additional voltage followers. For example, the output buffer may include three additional voltage followers with all voltage followers arranged as a low voltage differential signal (LVDS) buffer.

Abstract: A single-ended circuit, such as an LNA (300), in accordance with the present invention includes an input power matching circuit (310) and a bias circuit (305) connected to an output transistor (Qin) which provides the amplification. A degeneration inductance (Le) and load impedance (Lo) couple to the emitter and collector of the output transistor (Qin), respectively. The bias circuit (305) is configured to eliminate base shot-noise of the mirror transistor (Q1) which generates the amplification. The bias circuit (305) in accordance with the present invention also eliminates the noise of the bias resistor (Rx1) that is included within the bias circuit (305). Specifically, the bias circuit (305) includes a current reference source (Iref) and an emitter follower circuit (315) connected to a current mirror circuit (Q1, Q2, Rx2) that connects to a bias resistor (Rx1). This bias circuit (305) can be implemented in a wide-class of single-ended circuits.

Abstract: An output buffer is provided in the form of a voltage follower having a positive input that receives a reference voltage, a negative input and an output coupled together, and a control input that turns the voltage follower on and off. The output is coupled to one side of a load. The output buffer may have one or more additional voltage followers. For example, the output buffer may include three additional voltage followers with all voltage followers arranged as a low voltage differential signal (LVDS) buffer.

Abstract: A signal transmitting circuit includes one or more circuit blocks having a driving circuit and an intra-block transmission line for transmitting a signal produced by the driving circuit, one or more circuit blocks having a receiving circuit and an intra-block transmission line for transmitting the signal to said receiving circuit, and a main interblock transmission line for propagating a signal between both of the driving and receiving circuit blocks. Inter-block transmission line is terminated at one or two ends by one or two resistors having substantially the same impedance as the interblock transmission lien itself.

Abstract: An integrated circuit is disclosed in which a steering diode is coupled between an input bond pad and a ground bond pad. The steering diode is reverse biased when a voltage applied to the input bond pad exceeds the voltage at the ground bond pad. A circuit coupled between the input bond pad and the ground bond pad includes a transistor having a first electrode coupled the input bond pad and a second electrode coupled to the ground bond pad. There may be other circuit elements between the emitter and the ground bond pad. At least two series coupled diodes are coupled between the input bond pad and the ground bond pad. The at least two series coupled diodes provide ESD protection to the transistor and circuit coupled between the input bond pad and the ground bond pad.

Abstract: A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower volt age. Also, since the select transistor is provided, reading c an also be performed at a lower voltage.

Abstract: When a tuning mode signal VTUNE is activated, control clock signal TCLK is output, and counter counts up tuning signals TSIG1 to TSIG4. Tuning circuits render conductive the terminals of respective transistors, and reference potential Vref lowers in accordance with the reduction in the resistance value. When reference potential Vref attains equal to the external reference potential Ext.Vref, differential amplifier circuit stops output of the control clock signal TCLK In accordance with the plurality of the determined tuning signals TSIG1 to TSIG4, fuse elements inside the tuning circuits are programmed.

Abstract: A reference circuit contains a PTAT (Proportional To Absolute Temperature) core. In the PTAT core there is a difference between the currents densities flowing through a first and second transistor. This difference results in a difference in junction voltage in the first and second transistor. The currents are adjusted by a local feedback loop in proportion to one another until the difference in junction voltage equals a voltage drop across a resistor. According to the invention the currents to both transistors are supplied by current sources, and the currents are adjusted by deviating a fraction of the supplied current from the transistors. This makes it possible to reference all control voltages for the transistors and the local feedback loop to the same supply connection, which increases the stability and power supply rejection of the circuit.

Abstract: A signal-transmission system includes signal-transmission lines connected to a terminal voltage via terminal resistances, open-drain-type transistors outputting signals to the signal-transmission lines, branch lines stemming from the signal-transmission lines to connect the open-drain-type transistors with the signal-transmission lines, and insertion resistances inserted in the branch lines in proximity of the signal-transmission lines.

Abstract: An error amplifier circuit is provided having a pair of current mirror transistors driven by a pair of current sources, where one of the current mirror transistors operates at a lower current density than the other, and further having a resistor in an emitter circuit of the transistor operating at the lower current density and a summing node in the emitter circuit between the emitter of the one transistor and the resistor. A feedback circuit including a second resistor and a base-emitter circuit of a third transistor is in series between a feedback node coupled to the base of the feedback transistor and the summing node, such that a current from the feedback circuit is summed with the current conducted by the emitter of the one transistor. The error amplifier is balanced when the voltage at the feedback node is equal to a predetermined voltage, which can have substantially zero temperature coefficient at a voltage as low as one bandgap voltage.

Abstract: A method and apparatus of biasing a transistor to perform as a resistive device in an integrated circuit die is disclosed. A base lead of a transistor is coupled to a first lead of the transistor. A voltage is applied to a first lead such that the voltage does not exceed a threshold voltage of the transistor.

Abstract: A fast, low output impedance, low-power clamp circuit for a switched complementary emitter follower includes a current mirror circuit and two transistors. In operation, high current is provided to allow for fast switching when turning off the complementary emitter follower. When the complementary emitter follower has been turned off, the clamp circuit reverts to low-power operation requiring much lower current while maintaining the complementary emitter follower in the off condition.

Abstract: A method and apparatus for detecting pulse data is accomplished by a low voltage data detection circuit that includes a preamplifier circuit, an amplification stage, and a scaling circuit. The preamplifier circuit has a differential input, a predefined gain, and a maximum output limit and receives an input signal, which has a wide dynamic range. The preamplifier circuit amplifies the input signal based on the predefined gain to produce a preamplified data signal. The preamplified data signal is again amplified by the amplification stage and subsequently provided to the scaling circuit which scales the amplified data signal to a predetermined level. The resulting scaled data signal maintains the pulse width fidelity of the input data signal.

Abstract: A bipolar or MOS current reference circuit is provided, which generates a reference current having no temperature dependence and which is able to be operated by a single battery having a supply voltage of approximately 1 V. This circuit includes a first transistor having an emitter or source and a base or gate connected through a resistor, a first current mirror subcircuit generating a first mirror current of an input current flowing through the resistor, and a second current mirror subcircuit generating a second current of the input current flowing through the resistor. The first mirror current has a negative temperature coefficient. The second mirror current has a positive temperature coefficient. The first and second mirror currents are added to generate a sum current having no temperature dependence, which is derived as a reference current. The sum current is supplied to the first transistor to thereby drive the first transistor.

Abstract: A coring circuit for an input signal in the form of a differential input current having two components in phase opposition. A first pair of cascode transistors biased by a first reference voltage applies a first fraction of each of the components of the differential current to respectively first and second resistors. A second pair of cascode transistors biased by the first reference voltage provides a second fraction of each of the components of the differential current to a differential current output of the coring circuit and respectively to first and second branches of a differential stage that also receives voltages across the first and second resistors. Two coring current sources respectively connect first and second outputs of the differential stage to a supply voltage and are connected to each other through a third resistor.

Abstract: A nonvolatile semiconductor memory device has a semiconductor substrate of a first conductivity type, at least a pair of element isolation insulating films and a pair of spaced source/drawn regions of a second conductivity type different from the first conductivity type and formed in a surface of the semiconductor substrate. A floating gate electrode is formed above a channel region disposed between the pair of source/drain regions in the surface of the semiconductor substrate in an insulated relationship with the channel region. The floating gate electrode overlaps each of the element isolation insulating films and a gap is formed between an underside of the floating gate electrode and each of the element isolation insulating films at each of portions thereof where the floating gate electrode overlaps the pair of element isolation insulating films, respectively. A control gate electrode is formed above the floating gate electrode in an insulated relationship with the floating gate electrode.

Abstract: A signal transmitting circuit includes one or more circuit blocks having a driving circuit and an intra-block transmission line for transmitting a signal produced by the driving circuit, one or more circuit blocks having a receiving circuit and an intra-block transmission line for transmitting the signal to said receiving circuit, and a main interblock transmission line for propagating a signal between both of the driving and receiving circuit blocks. Inter-block transmission line is terminated at one or two ends by one or two resistors having substantially the same impedance as the interblock transmission line itself.

Abstract: In such a bidirectional signal transmission circuit in which the transmitter circuit of the logic circuit elements used in the conventional single end transmission circuit can be utilized by setting an impedance of an end circuit to be a value greater than a characteristic impedance of a transmission path, by shortening a length of the transmission path for connecting the end circuit with the logic circuit elements, and by increasing an amplitude of an input signal with utilization of a reflection wave produced by an impedance mismatching, such a signal transmission circuit where various types of transmission circuits such as a bidirectional signal transmission circuit and a single end transmission circuit are employed in a mixture form, can be made compact, and low power consumption can be achieved.

Abstract: An interface circuit for linking microprocessors, intended to limit the current (Iout) in the link (L1-L2) by inserting in the link the emitter-collector path of a first transistor (T.sub.1) which is in the saturated state during operation. This circuit includes a second transistor (T.sub.2) which has a geometry k times smaller than that of the first transistor (T.sub.1) and which is coupled to the first transistor (T.sub.1) so as to produce a copy (Iy) of the link current (Iout), and a base current generator (10) which produces an output current (Iz) which feeds the bases of the first and the second transistor (T.sub.1, T.sub.2), and which is a regressive function of the copy current (Iy), on the basis of a fixed reference current (I.sub.0). A pair of transistors (T.sub.3, T.sub.4), similar to the first and the second transistor (T.sub.1, T.sub.2) but connected to the link (L1-L2) in an inverted manner, provides protection for bidirectional operation.