Abstract: A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further is a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.

Abstract: Driving arrays of diodes. At least some of the example embodiments are methods of driving an array of diodes including: charging an inductor to increase an inductor current, the charging ceases when the inductor current reaches a predetermined threshold; driving the inductor current through a first portion of the array of diodes, the driving ceases prior to the inductor current reaching zero; and recirculating the inductor current through the inductor until a next charging event.

Abstract: A control/regulating system is provided for controlling/regulating an LED field with n LEDs, where n>2, with outputs at which control/regulating signals for controlling/regulating controllable switching elements can be tapped. Activation/deactivation times ( t ein jp j , t aus jp j ) of impulses can be defined by the control/regulating system through the control signals/regulating signals. One and/or several controllable switching elements can be actuated during the determined impulses for closing or opening. A number of k groups can be specified. Each LED is allocated to one of the k groups such that each of the k groups mj contains LEDs, where 1?j?k and ?j=1kmj=n apply, a reference time ?j=?1 . . . ?k can be determined for each group and the activation and deactivation time ( t ein jp j , t aus jp j ) of the impulse for each LED of every group can be determined as a factor of the reference time ?j=?1 . . . ?k, where 1?pj?mj applies.

Abstract: An optical light sensing device includes a detector operable to detect a light wave. The optical light sensing device also includes an integration circuit that includes an operational amplifier that is operable to reduce or cancel dark currents generated at the detector.

Abstract: A data output device is provided. The data output device includes a converter circuit configured to generate a conversion signal based on an output signal; a boosting circuit configured to generate a boosting signal based on the output signal; and an output circuit configured to generate the output signal based on an input signal and a feedback signal, the feedback signal being based on the conversion signal and the boosting signal.

Abstract: Systems and methods are disclosed for controlling nonequilibrium electron transport process and generating phonons in low dimensional materials. The systems can include a conductive sheet sandwiched between a first insulation layer and a second insulation layer; a first electrode conductively coupled to a first end of the conductive sheet; a second electrode conductively coupled to a second end of the conductive sheet; and a current source conductively coupled to the first electrode and the second electrode and configured to pass a current from the first electrode through the conductive sheet to the second electrode such that current generates a drift velocity of electrons in the conductive sheet that is greater than the speed of sound to generate phonons.

Abstract: Laser driver designs that aim to reduce or eliminate the problem of fault laser firing are disclosed. Various laser driver designs presented herein are based on providing a current dissipation path that is configured to start providing a resistance for dissipating at least a portion, but preferably substantially all, of the negative current from the laser diode. Dissipating at least a portion of the negative current may decrease the unintentional increase of the voltage at the input to the laser diode and, therefore, reduce the likelihood that fault laser firing will occur. A control logic may be used to control the timing of when the current dissipation path is activated (i.e., provides the resistance to dissipate the negative current from the laser diode) and when it is deactivated.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes an imaging region having a plurality of pixels arranged on a semiconductor substrate, in which each of the pixels includes a photoelectric converting portion and a charge converting portion for converting a charge generated by photoelectric conversion into a pixel signal and blooming is suppressed by controlling a substrate voltage of the semiconductor substrate.

Abstract: Signals generated by an array of photodiodes are applied to the inputs of corresponding edge detection circuits. Each edge detection circuit generates an output that changes state in response to a detected edge of the photodiode generated signal. The edge detection circuits may be formed by toggle flip-flop circuits. The outputs of the edge detection circuits are logically combined using exclusive OR logic to generate an output. The exclusive OR logic may be formed by a cascaded tree of exclusive OR circuits.

Abstract: A semiconductor element layer has a pixel region in which a plurality of photodiodes are provided and a peripheral circuit region in which a peripheral circuit for processing the device is provided, a power supply line to supply an electric power to the peripheral circuit, provided at a first side of the semiconductor element layer in the peripheral circuit region, a first wiring layer to supply the electric power to the power supply line, provided at a second side of the semiconductor element layer in the peripheral circuit region, and a plurality of first through-electrodes, provided in the peripheral circuit region and passing through the semiconductor element layer between the first side and the second side. At least a part of the first through-electrodes electrically connect between the power supply line and the first wiring layer.

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

Abstract: A photo sensing unit used in a photo sensor includes a photo sensing transistor, a storage capacitor, and a switching transistor. The photo sensing transistor receives a light signal for inducing a photo current correspondingly, and a source and a gate thereof are respectively coupled to the first signal source and the second signal source. The storage capacitor stores electrical charges induced by the light signal, one terminal thereof is coupled to drain of the photo sensing transistor, and another terminal thereof is coupled to a low voltage. The switching transistor is controlled by the second signal source for outputting a readout signal from the storage capacitor to the signal readout line. The threshold voltage of the photo transistor is higher than that of the switching transistor.

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

Abstract: A device for reading electric currents including a capacitive element to integrate the current, the terminals of the capacitive element being connected to the mass and to an output branch of the device respectively, and a differential pair including: a first transistor mounted between the input branch of the input stage and the capacitive element, the transistor being controlled by a polarized impulse voltage, capable of putting the first transistor alternately into the off state and then into the on state; and a second transistor mounted between the input branch of the input stage and a potential other than that of the capacitive element, said transistor also being controlled by a polarized impulse voltage, capable of putting the second transistor alternately into the off state and then into the on state, wherein the second transistor is mounted in phase opposition relative to the first transistor.

Abstract: In an ambient light sensor according to the present invention, a current amplification portion which amplifies a light current obtained by a light receiving portion to generate an output signal includes: a current amplification stage that has: a first current mirror amplifier which is composed of a bipolar transistor, and a second current mirror amplifier which is composed of a field effect transistor connected in parallel with the first current mirror amplifier; and a changeover control circuit which monitors an amplified current input into the current amplification stage, and performs changeover control of the first and second current mirror amplifiers according to a value of the amplified current.

Abstract: A circuit includes a generating circuit that generates a current signal in response to an input signal, a first one of a plurality of integrators that generates a voltage signal from the current signal, a comparator that is responsive to the voltage signal to compare the voltage signal with a predefined voltage, a switching circuit that reconfigures a first capacitor and a second capacitor connected to the first one of the plurality of integrators to discharge the first capacitor and to enable the second capacitor to generate the voltage signal in response to the current signal, and an analog-to-digital converter to generate an output when a predefined time interval has elapsed. The output is obtained by adding a first charge value corresponding to a count of number of times the voltage signal reaches the predefined voltage in the predefined time interval and a second charge value from the analog-to-digital converter.

Abstract: A transient voltage occurring between output terminals during ON/OFF operation is reduced. There are provided a pair of input terminals IN1 and IN2, a pair of output terminals OUT1 and OUT2, MOSFETs N1 and N2 connected between the output terminals, and a drive circuit 10 connected between the input terminals IN1 and IN2 and the MOSFETs N1 and N2. A light-emitting diode D1 is connected between the input terminals IN1 and IN2. The MOSFETs N1 and N2 have their source electrodes electrically connected to each other and their drains connected to the output terminals OUT1 and OUT2 respectively. The drive circuit 10 includes a photodiode array FD1 that supplies a drive voltage to the gates of the MOSFETs N1 and N2, and a discharge circuit 11, connected between the gate electrodes and the source electrodes of the MOSFETs N1 and N2, that discharges electric charges accumulated on each gate electrode.

Abstract: Methods and systems for low power switching are provided. In one embodiment, an optical switching system is provided. The system comprises at least one optically controlled switch adapted to maintain one of an open state and a closed state based on an associated light signal; and at least one light source adapted to output the associated light signal to the at least one switch, wherein the at least one light source cycles the light signal on and off, wherein the at least one light source is cycled on for a sufficient duration of time and with a sufficient periodicity to maintain the optically controlled switch in one of an open state and a closed state.

Abstract: A sensor device includes a sensor array in which infrared sensors are arrayed and a detection circuit connected to the output signal line of the sensor array. The detection circuit includes a capacitor having a charging circuit which is selectively driven, a sense amplifier circuit which detects and amplifies a change in sensor current flowing to the output signal line, a current-to-voltage conversion circuit which converts the output current from the sense amplifier circuit into a voltage, a discharging circuit which is controlled by the output voltage of the current-to-voltage conversion circuit to discharge the capacitor, and an output circuit which outputs the terminal voltage of the capacitor.

Abstract: A PWM driving apparatus for an LED includes a sawtooth wave generator (1) for generating a sawtooth wave signal, a comparator (2), an FET (3), a first resistor (4), a second resistor (5), a power supply (7), and a light emitting diode array (8). A modulation signal provided by a modulation signal source (6) and the sawtooth wave signal are fed to the comparator, an output of the comparator is connected to a gate terminal of the FET, the power supply is connected to a source terminal of the FET through the first resistor, and a drain tenninal of the FET outputs a driving current through the second resistor to the light emitting diode array.

Abstract: An apparatus and method for a sensing circuit for cancelling an offset voltage. Specifically, in one embodiment, a CMOS inverter amplifier amplifies an input signal present at an input node. A resistive feedback circuit is coupled to the CMOS inverter amplifier for cancelling an offset voltage that is associated with the CMOS inverter amplifier. This is accomplished by biasing the CMOS inverter amplifier to its threshold voltage. A bias circuit is coupled to the resistive feedback circuit for biasing MOSFET transistors in the resistive feedback circuit at a subthreshold conduction region. As such, the resistive feedback circuit presents a high impedance to the input node. A clamping circuit, coupled to the resistive feedback circuit, maintains operation of the transistors in the resistive feedback circuit in the subthreshold conduction region.

Abstract: An optical communication device includes a receiving circuit that generates an accurate voltage signal from received light. The voltage signal is then used to quickly and accurately determine emission information which is used to adjust the emission level of an associated light emitting diode, by varying the drive current supplied to the light emitting diode. The receiving circuit has a light receiving element that generates a current from received light. The current is converted into first and second current signals using a fixed distribution ratio. First and second amplifiers convert the first and second current signals to first and second voltages. A current control circuit is connected to the light receiving element and the second amplifier and controls the amount of the first current signal using the second voltage.

Abstract: A pixel sensor system that includes a photo-sensor, an output amplifier, and a feedback capacitor. The photo-sensor is configured to receive photons and to convert the photons into charge. The output amplifier has at least two transistors in a cascoded configuration. The amplifier converts the charge into electronic signal. The feedback capacitor is disposed between the photo-sensor and an input of the output amplifier.

Abstract: An amplification type solid state imaging device output circuit includes a source follower circuit and a current mirror circuit. The source follower circuit is formed of a first MOS transistor Q11 and a second MOS transistor Q15 that is used as a load and is connected to the first MOS transistor Q11 via a vertical signal line. The current mirror circuit is formed of the second MOS transistor Q15 and a third MOS transistor Q21 which has the same channel structure and in which the gate and the drain are connected to the gate of the second MOS transistor Q15. The drain of the third MOS transistor Q21 is connected to a power source via a fixed resistor R11. The variation in the current flowing through the fixed resistor R11 and the third MOS transistor Q21 is reduced, and therefore, the variation in the current of the second MOS transistor Q15 used as a load can be reduced, allowing a wide operating margin to be secured.

Abstract: An image sensor having a plurality of pixels comprising a semiconductor material of a first conductivity type with at least two adjacent pixels, each of the pixels has a photodetector formed within the substrate and an electrical function that is shared between the adjacent pixels integrated within the adjacent pixels. The electrical function can be: a transfer gate, a reset gate, a row select gate, an amplifier drain, an output node, a floating diffusion, a reset drain, a lateral overflow gate, an overflow drain or an amplifier, that is shared between multiple pixels resulting in a saving of space.

Abstract: A polarity-independent optical receiver is constructed so that the bias voltage applied to the optical receiver may be applied in a polarity-independent manner. The polarity-independent optical receiver is also constructed in a balanced arrangement, thus providing the ability to effectively suppress common-mode intensity noise present at the optical receiver. The polarity-independent optical receiver may advantageously be fabricated using metal-semiconductor-metal (MSM) technology.

Abstract: In order to improve the noise performance of a charge balance type photodiode array by reducing error influences, e.g. due to offset voltages, flicker and/or thermal noise, on a desired signal a compensation circuit is inserted in each channel of this array. The basic concept under lying this compensation circuit is to effect a correlated double sampling method without any significant increase in space or power demand for the silicon chip of at least one channel of said photodiode array. Because the wanted signal is primarily an amount of charge, the compensating circuit comprises a switchable compensating capacitor to compensate an error contribution of the desired signal. In a first “calibration period” the compensating capacitor is charged or discharged in dependence on the actual noise contribution. In a second compensation period the compensation capacitor provides a voltage which is used to correct a predetermined reference voltage to insure compensation of the error contribution.

Abstract: A display and keyboard illumination of battery-operated portable electronic devices using LEDs are provided. A flyback converter is modified into a dedicated converter suitable for using two LEDs and their diode-like operation is utilized. Firstly, a specified amount of energy of the battery voltage (Vbatt) is stored in the coil (L) of a primary circuit until, controlled by a comparator (K). The LEDs are connected in parallel with the coil, in direction such that they substantially prevent the current leaking through them. Secondly, the coil is disconnected from the battery by a switch (SW). A comparator (K) detects when the coil current reaches a specified threshold level and, by using a control circuit (SWC), then causes the switch (SW) to become non-conductive. The self-induction of the coil builds up a voltage exceeding the forward bias of the LEDs, which (thirdly) keeps on passing the current and illuminating.

Abstract: An optical coupling semiconductor switching circuit to be coupled to a light emitting device for controlling electric circuits. The switching circuit includes a light detector generating voltage in response to light from the light emitting device and an impedance circuit having a first and a second output terminal. The impedance circuit is connected to the light detector and passes through a voltage input from the light detector to the output terminals with little loss. A plurality of switching devices are connected in parallel between the output. Each switching device includes at least a pair of transistors each having a gate connected to the first output terminal, and an optical rectifier that is activated by light from the light emitting device. The rectifier has a cathode connected to a source of each transistor and a anode connected to the second input terminal.

Abstract: A position detection element is provided with a photoelectric conversion unit comprising a plurality of pixels arranged on a straight line, a switch group for switching the output of pixels, the first memory group, the second memory group, the first switch group for selecting a memory from the first memory group, the second switch group for selecting a memory from the second memory group, the first signal line for transmitting a signal from the first memory group, the second signal line for transmitting a signal from the second memory group, and a differential amplifier for detecting the difference between signals inputted respectively from the first signal line and the second signal line, and these components constitute the position detection element.

Abstract: A CMOS charge-integration mode photo-detector built on an n-type substrate is disclosed in this invention. This photo-detector includes a p+n photodiode with the n-type substrate constituting an n-region and a p+ diffusion region disposed near a top surface of the n-type substrate, the p+ diffusion region constituting a charge integration node. The photodetector further includes a gate-biased charge storable n-type MOS transistor functioning as a photo-conversion voltage amplifier supported on the substrate formed with a threshold voltage of Vt0 having a gate terminal connected to the charge-integration node. The photodetector further includes a MOS transistor supported on the substrate functioning as a constant current-source load transistor having a drain terminal connected to a source terminal of the gate-biased charge storable n-type MOS transistor and a gate terminal connected to a bias reference voltage.

Abstract: A chip module includes a driver IC chip and a driven IC mounted on the drive IC by the use of anisotropic film. The driver IC has a plurality of drive-elements that drive driven-elements in the driven IC chip. A plurality of drive-elements are aligned at predetermined intervals. A power-supplying electrode extends along the plurality of drive-elements and distributes electric power to individual drive-elements. A plurality of power supplying electrode pads are provided on the power-supplying electrode. The power-supplying electrode pads receive electric power from outside and supply the electric power to the power-supplying electrode. The n-th power-supplying electrode pad is positioned at a location given by L(2n−1)/2N where N is a number of the power-supplying electrode pads, n is an integer from 1 to N, and L is a total length of the power-supplying electrode. There are provided a plurality of drive electrode pads through which the drive-elements are connected to the driven elements.

Abstract: An image sensor having a plurality of pixels comprising a semiconductor material of a first conductivity type with at least two adjacent pixels, each of the pixels has a photodetector formed within the substrate and an electrical function that is shared between the adjacent pixels integrated within the adjacent pixels. The electrical function can be: a transfer gate, a reset gate, a row select gate, an amplifier drain, an output node, a floating diffusion, a reset drain, a lateral overflow gate, an overflow drain or an amplifier, that is shared between multiple pixels resulting in a saving of space.

Abstract: A CMOS charge-integration mode photo-detector built on an n-type substrate is disclosed in this invention. This photo-detector includes a p+n photodiode with the n-type substrate constituting an n-region and a p+ diffusion region disposed near a top surface of the n-type substrate, the p+ diffusion region constituting a charge integration node. The photodetector further includes a gate-biased charge storable n-type MOS transistor functioning as a photo-conversion voltage amplifier supported on the substrate formed with a threshold voltage of Vt0 having a gate terminal connected to the charge-integration node. The photodetector further includes a MOS transistor supported on the substrate functioning as a constant current-source load transistor having a drain terminal connected to a source terminal of the gate-biased charge storable n-type MOS transistor and a gate terminal connected to a bias reference voltage.

Abstract: A switching circuit has switching elements for passing-through or cutting-off signals of a positive pulse, which is a rectangular pulse rising from a low level and falling after having kept a high level for a certain time as a high voltage input signal, and a negative pulse, which is a rectangular pulse falling from a high level and rising after having kept a low level for a certain time, the switching circuit being applied to a capacitive load driving device.

Abstract: An LED drive circuit comprising a plurality of LEDs coupled together in parallel, the LEDs configured to be powered by a battery. A current source coupled to the LEDs provides a current signal level for driving the LEDs. A current sensor circuit is coupled to the current source and is configured to provide a first indication signal in response to the current signal flowing in the LEDs. A controller circuit is coupled to the current sensor so as to receive the indication signal. The controller circuit is further coupled to the current source so as to provide an appropriate control signal to the current source so that the current drawn through the LEDs remains substantially at a desired level.

Abstract: A two-dimensional image sensor comprises a matrix array of photodiodes and multiple vertical shift registers horizontally divided into an imaging part and a memory part. During a vertical blanking period, the imaging part receives charge packets from the photodiodes and shifts the charge packets via the memory part to a matrix array of storage cells. During a subsequent horizontal blanking period, the charge packets are restored from the storage cells to the memory part and shifted downwards by the distance of a row so that the charge packets of bottom row are shifted our into a horizontal register. Remaining charge packets are then withdrawn from the memory part to the storage cells and stored therein during a subsequent horizontal scan period. During this horizontal scan period, the memory part is maintained at such a voltage that no dark currents substantially exist and the charge packets in the horizontal register are sequentially delivered to external circuitry.

Abstract: A CMOS charge-integration mode photo-detector built on an n-type substrate is disclosed in this invention. This photo-detector includes a p+n photodiode with the n-type substrate constituting an n-region and a p+ diffusion region disposed near a top surface of the n-type substrate, the p+ diffusion region constituting a charge integration node. The photo-detector further includes a gate-biased charge storable n-type MOS transistor functioning as a photo-conversion voltage amplifier supported on the substrate formed with a threshold voltage of Vt0 having a gate terminal connected to the charge integration node. The photo-detector further includes a MOS transistor supported on the substrate functioning as a readout switch transistor having a source terminal connected to a drain terminal of the gate-based charge storable n-type MOS transistor.

Abstract: A signal processor with a simplified circuit configuration provides an improved processing speed and can be realized of small size and at inexpensive cost. The signal processor includes signal holding means for holding output signals from plural signal sources (S1-S4), and signal mixing means (M31-M34) for mixing at least two signals among the plural signals held to output plural mixed signals. Since the mixed signals are less than the signal sources in number, the small number of signal lines can lead to an increased processing speed. Then the mixed signals corresponding to discrete signals from plural signal sources enables processing without substantially destroying information.

Abstract: An amplifying type solid-state imaging apparatus includes an amplifying type photoelectric conversion device. The device including a transistor for accumulating a charge generated by incident light as a signal charge in a charge accumulation region proximate to the surface of the semiconductor substrate and for outputting a signal in accordance with the accumulated signal charge, and a resetting section provided adjacent to the transistor for performing a resetting operation. The signal charge accumulated in the transistor is discharged from the charge accumulation region based on an applied voltage.

Abstract: A photon coupled circuit comprises a high quantum efficiency semiconductor light emitter (TDA) coupled with low photon losses to a high quantum efficiency semiconductor light detector (OLD). Bias current is provided to both the light detector (OLD) and light emitter (TDA). The light output of the light emitter (TDA) is modulated by the signal current flowing therein and the current flowing (i.sub.o) in the detector (OLD) is modulated by the light received from the light emitter (TDA). The quantum transfer efficiency or open loop current gain is greater than 0.5 and a portion of the AC current flowing in the light detector (OLD) is applied as feedback to reinforce or oppose the current flowing in the light emitter (TDA).

Abstract: An intensity controlling circuit device can correct variation in intensity of light beams, due to tolerance occurred in each of a plurality of LED-array chips, emitted by LEDs provided in each of the LED-array chips. The intensity controlling circuit device is connected to at least one LED-array chip comprising a plurality of LEDs and slave transistors corresponding to each of the LEDs. The intensity controlling circuit device comprises an intensity controlling circuit connected to the respective LED-array chip. The intensity controlling circuit comprises a first transistor provided between a power source and a constant current generating unit so as to supply a current to the LED-array chip, and an intensity adjusting unit having a second transistor connected to the first transistor in parallel and a controlling unit for controlling the on/off state of the second transistor.

Abstract: A current source that uses a regulated constant current power source to supply current to drive a load, and the load current is controlled by shunt switches. If a plurality of loads utilize less than 50% duty factor, then one current source can drive N multiple dissimilar impedance loads, each at 100%/N duty factor. The current source includes a power converter coupled between the power source and the load(s) for providing pulsed current thereto. A current sensor is provided for sensing current flowing through the loads. A controller is coupled between the sensor and the power converter for regulating the amplitude of the output current supplied to the loads. A shunt switch is coupled across the loads, and a duty factor controller is coupled to the shunt switch for setting the duty factor of the shunt switch. A laser drive circuit, or driving light emitting diode arrays is also disclosed that include a plurality of the current sources.

Abstract: A solid-state radiation detector, including a photodiode array, is suitable for use in computed tomography, with the dark current of the photodiodes being compensated. The compensation is accomplished by an adjustable voltage source connected to the photodiode, the voltage of the adjustable voltage source being set by a regulator so that the dark current becomes zero. The regulator receives a signal corresponding to the dark current from a measured value transducer in the form of a current-driven voltage source. The voltage supplied by the adjustable voltage source to the photodiode is maintained constant while x-rays are incident on the overall detector which cause illumination of the photodiode.

Abstract: An intensity controlling circuit device can correct variation in intensity of light beams, due to tolerance occurred in each of a plurality of LED-array chips, emitted by LEDs provided in each of the LED-array chips. The intensity controlling circuit device is connected to at least one LED-array chip comprising a plurality of LEDs and slave transistors corresponding to each of the LEDs. The intensity controlling circuit device comprises an intensity controlling circuit connected to the respective LED-array chip. The intensity controlling circuit comprises a first transistor provided between a power source and a constant current generating unit so as to supply a current to the LED-array chip, and an intensity adjusting unit having a second transistor connected to the first transistor in parallel and a controlling unit for controlling the on/off state of the second transistor.

Abstract: A built-in drive-power-source semiconductor device of low cost having a good switching characteristic and a decreased switching loss. In operation, a reference charge potential is applied to a charging IGBT by a first constant voltage diode thereby turning on the IGBT to charge a battery means. When the charge potential of the battery means reaches a prescribed level, a MOSFET is turned on by a second constant voltage diode, shortcircuiting the first constant voltage diode, causing the charging IGBT is turn off to eliminate overcharging of the batter means and maintain the potential of the battery means at a prescribed value.

Abstract: The solid state image sensor of the invention comprises a plurality of photosensitive elements arranged in a matrix form, a vertical shift register disposed adjacent each column of the photosensitive elements and adapted to vertically transfer signal charges read from the corresponding photosensitive elements, a storage region for storing signal charges transferred by the vertical shift register and a horizontal shift register adapted to horizontally transfer signal charges read from the storage region, the above vertical shift register comprising units of 2n (n is a positive integer of not less than 3) transfer electrodes which are respectively independent.

Abstract: There is disclosed on optoelectronic integrated circuit comprising, a plurality of channels each including an optical receiving device for converting a received optical signal to an electric signal, and an amplifier for amplifying an output signal of the optical receiving device, the channels being integrated on the same semiconductor substrate, electric power source nodes of at least two of the amplifiers of the respective channels being connected to a common electric power source node, and the common electric power source node being connected through a resistor element to an electric source power supply terminal for supplying an electric source power to the channels.

Abstract: A method for driving a solid-state imaging device which includes the steps of (1) reading a signal from an i-th pixel in the pixel portion into a vertical charge transfer portion over k bit portions thereof starting from the i-th bit portion thereof; (2) transferring the read signal corresponding to k bits of the vertical charge transfer portion in the vertical direction during one horizontal blanking period; (3) reading a signal from an (i+1)-th pixel of the n pixels arranged in the pixel portion into the vertical charge transfer portion over k bit portions thereof starting from the (i+1)-th bit portion thereof after the completion of the transfer of signal portions corresponding to the (k-1) bits of the read signal corresponding to the k bits of the vertical charge transfer portion; (4) repeating the steps (1) through (3) for the pixels arranged in the pixel portion starting from the first pixel nearest to a horizontal charge transfer portion to a pixel farther therefrom; and (5) repeating the step (2) afte

Abstract: An optically isolated N-channel MOSFET driver turns on a MOSFET device in response to an optical input signal to drive a load. The turn-on time of the MOSFET is enhanced by a current boost circuit. As the MOSFET transcends to an on state and delivers current to the load, the voltage across the device diminishes and causes the current boost circuit to become inactive thus reducing to zero the current drain consumed by the current boost circuit. A photovoltaic array maintains the MOSFET operation. An optically isolated SCR is respondent to the absence of a light signal to turn off the MOSFET. Furthermore, the optical decoupling of the SCR, between the gate and source of the MOSFET device, is arranged to provide enhanced noise immunity. A voltage clamping circuit coupled between the gate and source of the MOSFET device provides additional protection to the device from large over voltages.