Abstract: A microwave oscillator with an M-type interdigital slow wave resonator structure is disclosed. In the above oscillator, the anode has top, middle and bottom resonance discs. The top disc has downward extending vanes and defines an upper resonance chamber, while the bottom disc has upward extending vanes and defines a lower resonance chamber. The upper and lower resonance chambers is separated from each other by a middle resonance disc that has upward and downward extending vanes. An emitter is placed between the filament and the anode and emits thermions into the actuating space when it is heated by the filament. The upward extending vanes of the middle disc engage with the vanes of the top disc in the type of interdigital engagement like clasped hands. The downward extending vanes of the middle disc engage with the vanes of the bottom disc in the same manner.
October 18, 1996
Date of Patent:
June 16, 1998
Samsung Electronics Co., Ltd.
Jong-Chul Shon, Mark Ivanovich Kouznetsov, Sang-Gweon Kim
Abstract: A cathode of a crossed field device includes a first electrode and a second electrode disposed about and dielectrically spaced from the first electrode. In a preferred embodiment the electrode comprises a pair of electrodes, a first one of the pair being a masking electrode disposed about and dielectrically spaced from the first electrode and a second one of the pair being an emitter electrode disposed about and dielectrically spaced from the masking electrode.
Abstract: A microwave oscillator is provided having electron emissive means and a first surrounding resonant structure. The first structure is fabricated of a material capable of emitting secondary electrons. A second resonant structure surrounds the secondary electron emitter and microwave energy is generated by the interaction between the electrons and currents induced in the structure. The high degree of isolation between the first oscillator section and the second amplifying section results in the generation of stable oscillations relatively free of effects of load variations.
July 2, 1975
Date of Patent:
September 14, 1976
Kenneth W. Dudley, George H. MacMaster, Lawrence J. Nichols