Abstract: A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.
Type:
Grant
Filed:
December 20, 2005
Date of Patent:
October 7, 2008
Assignee:
Palo Alto Research Center Incorporated
Inventors:
Christian G. Van de Walle, Peter Kiesel, Oliver Schmidt
Abstract: A frequency dependent resistor in which the length of the current path across the resistor varies as a function of the frequency of the electrical signals being passed therethrough. The resistor uses the principal known as skin effect to direct relatively higher frequency signals through a longer path through the resistor than is experienced by signals having a relatively low frequency.