Abstract: A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate.

Abstract: Provided is substrate processing apparatus including processing chamber that dries substrate W using high temperature and high pressure fluid, raw material accommodating unit that accommodates raw material in liquid state, and supplying unit that supplies the high temperature and high pressure fluid to the processing chamber. The supplying unit includes sealable outer vessel connected to the processing chamber and the raw material accommodating unit, and inner vessel provided within the outer vessel and configured to receive the raw material. The inner vessel is provided with opened holes portions configured to drop down the raw material toward a portion of the outer vessel to be heated. After the raw material is accommodated in the inner vessel, the raw material is contacted with the portion to be heated and then heated. A high temperature and high pressure fluid is then obtained and supplied to the processing chamber.

Abstract: A substrate processing apparatus which holds and rotates a substrate substantially horizontally; having a control unit which controls a rinsing liquid supply mechanism for supplying a rinsing liquid onto the substrate; a gas knife mechanism that sprays gas onto the substrate to form a gas spraying zone and scans the entire substrate without rotating the substrate; a rinsing liquid mechanism for supplying a rinsing liquid onto the substrate at its area downstream from the gas spraying zone; and a drying unit for drying the substrate by rotating the substrate.

Abstract: A substrate processing method comprising: holding a substrate substantially horizontally by a rotatable substrate holding mechanism; supplying a rinsing liquid onto the top of the substrate held by the substrate holding mechanism at the substrate holding step; after the rinsing liquid supply step, spraying a gas onto the top of the substrate held by the substrate holding mechanism, by a gas knife mechanism, to form a gas spraying zone on the substrate top, and unidirectionally scanning the substrate top in its entirety by this gas spraying zone, without rotating the substrate; replenishing the rinsing liquid by supplying, in parallel to the gas knife spraying step, a rinsing liquid onto the substrate top at its area downstream in the gas-spraying-zone scanning direction rather than the gas spraying zone formed by the gas knife mechanism; and drying the substrate surface after the gas knife spraying step and the rinsing liquid replenishing step.

Abstract: Disclosed is a method for drying a plate-like article; the method including rinsing with an aqueous rinsing liquid with subsequent rinsing with an organic solvent, wherein the organic solvent has a water content of below 20 mass-% wherein the organic solvent is supplied at a solvent temperature, which is at least 30° C. and not higher than 60° C.

Abstract: Disclosed is a supercritical processing apparatus and a supercritical processing method for suppressing the pattern collapse or the injection of material constituting a processing liquid into a substrate. A processing chamber receives a substrate subjected to a processing with supercritical fluid, and a liquid supply unit supplies a processing liquid including a fluorine compound to the processing chamber. A liquid discharge unit discharges the supercritical fluid from the processing chamber, a pyrolysis ingredient removing unit removes an ingredient facilitating the pyrolysis of a liquid from the processing chamber or from the liquid supplied from the liquid supply unit, and a to heating unit heats the processing liquid including a fluorine compound of hydrofluoro ether or hydrofluoro carbon.

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.

Abstract: Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.

Abstract: An apparatus, system and method for preparing a surface of a substrate using a proximity head includes applying a non-Newtonian fluid between the surface of the substrate and a head surface of the proximity head. The non-Newtonian fluid defines a containment wall along one or more sides between the head surface and the surface of the substrate. The one or more sides provided with the non-Newtonian fluid define a treatment region on the substrate between the head surface and the surface of the substrate. A Newtonian fluid is applied to the surface of the substrate through the proximity head, such that the applied Newtonian fluid is substantially contained in the treatment region defined by the containment wall. The contained Newtonian fluid aids in the removal of one or more contaminants from the surface of the substrate. In one example, the non-Newtonian fluid can also be used to create ambient controlled isolated regions, which can assist in controlled processing of surfaces within the regions.

Abstract: This invention pertains to a bio-mass processing system, and method of processing waste bio-mass, wherein one or more mixers mixes a bed of bio-mass material such as manure at substantially any and all locations in a defined length and width portion of the bed, in a dryer. Heated air percolates upwardly through the bed. Separation apparatus separates a relatively dryer fraction of the bio-mass material from the dryer. The separated finished product from the dryer is optionally fed to a boiler where the dried bio-mass material is burned. Heat of combustion from the boiler is used as dryer heat for drying the bio-mass feed material in the dryer. Excess heat is optionally used to produce steam, which powers a turbine, which powers an electrical generator. Residual ash from the combustion process comprises about 2% by weight of the solids content of e.g. a feed stream coming into the dryer.

Abstract: A system for drying a work piece is provided. The system includes a chamber containing a cleaning fluid in a first portion of the chamber and a drying region. The system includes a wet transition arm configured to support a plurality of work pieces while disposed in the cleaning fluid. A dry transition arn configured to accept the plurality of work pieces from the wet transition arm as the wet transition arm is being raised is also included. The dry transition arm and the wet transition arm are coupled to a common drive mechanism, wherein the common drive mechanism includes a first and a second motor. The first motor is configured to drive both the wet and dry transition arms. The second motor is configured to control an amount of separation between the wet and dry transition arms. A transition arm and method for drying a work piece are provided.

Abstract: A semiconductor drying process apparatus comprising a processing chamber; two or more inlet/outlet openings formed in the processing chamber; a first pipe member coupled in fluid communication between one or more of the inlet/outlet openings of the processing chamber and a first drain valve; a second pipe member coupled in fluid communication between one or more other ones of the inlet/outlet openings of the processing chamber and a first supply valve; and wherein the first pipe member is coupled in fluid communication to the second pipe member for increasing the flow capacity of the semiconductor drying process apparatus.

Abstract: A discharge pipe is provided within a processing chamber, and ejects a drying gas. A pressure reducing pump exhausts air from the processing chamber to create a reduced-pressure atmosphere in the processing chamber. A drying gas supply passage supplies the drying gas generated in a first drying gas generator and in a second drying gas generator to the discharge pipe. The first drying gas generator generates the drying gas by bubbling IPA liquid stored in a heating bath with nitrogen gas. The second drying gas generator generates the drying gas by mixing IPA vapor produced by evaporation in an IPA vapor generating bath and nitrogen gas together. Thus, the supply of the drying gas generated in the plurality of drying gas generators to the processing chamber increases the concentration of the IPA vapor within the processing chamber. This shortens the time required for drying to improve drying performance.

Abstract: In a condition that an opposed surface 31 of a proximity block 3 is positioned in the vicinity of a front surface Wf of a substrate and a liquid-tight layer 23 is formed in a space SP between the opposed surface 31 and the front surface Wf of the substrate, the proximity block 3 moves in the moving direction (?X), a solvent gas containing a solvent component, which is dissolved in the liquid and reduces the surface tension, is supplied toward an upstream-side edge 231 of the liquid-tight layer 23. Further, the liquid is supplied to the front surface Wf of the substrate at an upstream-side interface 231a or on the downstream side (?X) in the moving direction relative to the upstream-side interface 231a, thereby replacing a rinsing liquid (the liquid) contacting the front surface Wf of the substrate with thus supplied fresh liquid.

Abstract: The present invention disclosed herein is an apparatus for drying a substrate. In accordance with the present invention, the apparatus includes a measuring unit to detect a density of IPA vapor at predetermined regions in a process chamber or a pipe. The measuring unit has a radiating unit, a detection unit, and a window unit. The radiating unit transmits infrared-ray in a wavenumber region where light is absorbed by the IPA vapor.

Abstract: An improved system and method for mounting an air dryer is provided. The improved system and method employs a single centralized special fitting that secures the air dryer manifold to a reservoir. The bore in which the fitting is disposed is used to communicate air from the reservoir to the air dryer in order to purge the desiccant in the air dryer. The mounting assembly includes anti-rotational mechanisms which prevent the air dryer from rotating about its axis. The mounting assembly may also include a reservoir and a mounting bracket for the reservoir which uses less than 75 percent of a truck mounting rail height.

Abstract: A method for drying an object, having a polymeric film, wherein the object is submerged in a rinse liquid. The object is removed from the rinse liquid and the object is placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object. The density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force. The object is removed from the solvent bath. A drying process is performed.

Abstract: Method for drying a microstructure member having many micro concavities in a surface, the micro concavities containing water, includes adjusting the temperature of liquid inside the micro concavities to a temperature in the range of the cloud point of a surfactant ±1° C., and supplying a mixture of the surfactant and a hydrophobic solvent adjusted to a temperature in the range of the cloud point ±1° C. into the micro concavities to remove part or all of the water; heating the liquid inside the micro concavities to a temperature exceeding the cloud point +1° C., and supplying the hydrophobic solvent controlled to a temperature exceeding the cloud point +1° C. into the micro concavities to replace the liquid in the concavities with the hydrophobic solvent; and placing the resulting microstructure member with the concavities into contact with liquid or supercritical carbon dioxide to replace the hydrophobic solvent with the liquid or supercritical carbon dioxide.

Abstract: A dryer for drying a substrate includes: a bath containing a fluid; a chamber; and a delivery system supplying a polar organic compound, such as isopropyl alcohol, and a hydrophobic organic compound, such as hydrofluoroether, to the interface between the substrate and the fluid as the substrate is removed from the fluid of the bath into the chamber. The dryer further includes a chamber environment control system that supplies a gas into the chamber to dry the substrate and controls temperature and humidity in the chamber and a chamber heater attached to the chamber to transfer thermal energy into the chamber. A drying method includes: immersing a substrate into a fluid contained in a bath; removing the substrate from the fluid into a chamber; and supplying isopropyl alcohol and hydrofluoroether to an interface between the substrate and the fluid.

Abstract: A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.

Abstract: For a single chamber air drier in a compressed air system on a vehicle the volume of dry regeneration air required to regenerate a desiccant in the air drier has to be determined. This can be accomplished in that data regarding system pressure, outdoor temperature and supplied air volume are continuously provided to a compute, which in relation to these parameters controls the supply of regeneration air to the air drier.

Abstract: In a process for drying microporous, fluid-containing particles, the fluid-containing particles to be dried are fed as a moving bed countercurrently to a drying fluid, the interfacial tension of the fluid being reduced in comparison with the interfacial tension of the fluid at room temperature, at near-critical to supercritical pressure of the fluid, preferably to a value in the range from 0 to {fraction (1/10)}, in particular from 0 to {fraction (1/20)}, of the interfacial tension at room temperature. Furthermore, microporous, three-dimensionally networked particles are prepared by a process comprising preparation of microporous particles containing pore liquid, exchange of the pore liquid in the particles for a fluid and drying of the fluid-containing particles, the exchange and drying being carried out in the moving bed by the countercurrent method.

Abstract: A wafer dryer for drying a wafer includes a chamber and a support adapted to support the wafer in the chamber. A spray nozzle is disposed in the chamber. A source gas supply tank is in fluid communication with the spray nozzle. At least one heater is operable to heat the chamber and the source gas supply tank. A pumping line is in fluid communication with the chamber. Drive means are operable to rotate the chamber and the spray nozzle. A method for drying a wafer using a wafer dryer including a chamber and a revolving spray nozzle includes the steps of: loading the wafer in the chamber; reducing the pressure in the chamber in which the wafer is loaded to a near vacuum state; creating a temperature controlled atmosphere in the pressure-reduced chamber to quicken drying of the wafer; and spraying the source gas on the wafer while rotating the chamber and the revolving spray nozzle in opposite directions in the pressure-reduced temperature controlled atmosphere.

Abstract: In a process for drying microporous, fluid-containing particles, the heat required for increasing the temperature is supplied by convection by reducing the interfacial tension of the fluid, preferably to 0 to 1/10, in particular to 0 to 1/20, of the interfacial tension of the fluid at room temperature, by appropriately increasing the temperature at from close to the critical pressure to supercritical pressure of the fluid. Furthermore, microporous, three-dimensionally networked particles are prepared by a process in which the drying process is used. In addition, an apparatus is used for carrying out the drying process, the apparatus comprising a pressure container having an inner container and pressure-withstanding outer container and suitable measuring and control apparatuses and pump apparatuses and heat exchangers, the inner container being provided for holding the particles to be dried and a gap being provided between the inner container and the outer container.

Abstract: A substrate dryer causing no water mark on a substrate having a refined·complicated structure and capable of suppressing increase of a cost required for a drying treatment is provided. Drying gas of low-molecular silicone generated in a drying gas generation part is heated by a heater and thereafter supplied from a drying gas supply nozzle. The drying gas is supplied to the main surface of a substrate being pulled up from de-ionized water stored in a cleaning bath as a stream. Silicone contained in the drying gas is condensed on the surface of the substrate, substitutes for moisture, and thereafter vaporizes. Silicone is excellent in permeability·dryability, and hence can suppress formation of a water mark also on a substrate having a refined·complicated structure. Further, silicone applies no load to the environment, and hence increase of a cost required for the drying treatment can be suppressed without requiring specific treatment for disposal.

Abstract: A system for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: A method and apparatus for high-pressure drying of semiconductor wafers includes the insertion of a wafer into an open vessel, the immersion of the wafer in a liquid, pressure-sealing of the vessel, pressurization of the vessel with an inert gas, and then the controlled draining of the liquid using a moveable drain that extracts water from a depth maintained just below the gas-liquid interface. Thereafter, the pressure may be reduced in the vessel and the dry and clean wafer may be removed. The high pressure suppresses the boiling point of liquids, thus allowing higher temperatures to be used to optimize reactivity. Megasonic waves are used with pressurized fluid to enhance cleaning performance. Supercritical substances are provided in a sealed vessel containing a wafer to promote cleaning and other treatment.

Abstract: A process for dry cleaning fabrics comprising the steps of: (i) placing one or more fabrics to be cleaned in a device which provides heat and agitation; (ii) placing one or more carrier sheets in the device wherein the carrier sheets have 200 grams of a liquid cleaning/refreshment composition releasably absorbed therein; (iii) heating the air within the device to at least 130° F. (55° C.); and (iv) agitating the fabrics and the carrier sheets until at least 40% by weight of the liquid cleaning/refreshment composition from the carrier sheets has been evaporated and vented from the device. There is further provided a kit for dry cleaning fabrics comprising: one or more carrier sheets, and from 200 grams to 1,000 grams of a liquid cleaning/refreshment composition, wherein the one or more carrier sheets can absorb at least 200 grams of the liquid cleaning/refreshment compositions.

Abstract: A method for thermocapillary drying of substrates includes the step of elevating a submerged substrate away from a rinsing liquid. Such movement of the substrate forms a meniscus on opposite sides of the substrate. The curved raised portion of the meniscus at each side of the substrate is gently heated in such a way as to induce thermocapillary flows, which cause the rinsing fluid to flow away from the substrate so that the withdrawing substrate may be pulled out dry and clean. Heating may be accomplished by directing a warm gas onto the meniscus or by heating the meniscus with rays from a radiation/light source. Apparatus is also provided for performing the various method steps.

Abstract: Dielectric heating is used to assist with the cleaning of sorbent materials contaminated with oils and the like and the recovery of the solvent. In particular, a pressurized system is used such that a pressurized solvent is circulated to remove the contaminants from the sorbent materials. The RF radiation is directed into the vessel to vaporize residual solvents associated with the sorbent materials. Solvent is separated from the removed contaminants for reuse. RF radiation can be used to complete the removal of volatile compounds from the reclaimed oil/contaminants.

Abstract: There are available as chlorine base organic solvents for cleaning by vapor-defatting methylene chloride (CH.sub.2 Cl.sub.2), trichloro ethylene (CHCl.dbd.CCl.sub.2), perchloroethylene (CCl.sub.2 .dbd.CCl.sub.2), 1,1,1-trichloroethane (CH.sub.3 CCl.sub.3) and flon 113 (CCl.sub.2 FCClF.sub.2), etc., of which mainly used is a methylene chloride (CH.sub.2 Cl.sub.2) solvent. By vaporizing said methylene chloride solvent and permeating its vapor into the wood to be treated 10, to melt the tough lignin in the cell structure, thereby perforating the cell membranes, and undermine the valve action of portholes of the false vessels or vessels, fleeing of the cell water confined inside the cells and lumens is facilitated through said perforations and the porthole valves. By perforating the cells and undermining the valve action of the portholes, the fleeing of the free water confined therein, when drying the treated wood by hot air or sun's heat, is facilitated, for the benefit of very rapid drying.