Abstract: A photoelectric conversion device comprising a pixel portion in which pixels each including a photoelectric converter are arranged, a sample/hold unit configured to sample a signal generated in the photoelectric converter via a vertical signal line and hold the signal, and a converter configured to perform an analog/digital conversion is provided. In the sample/hold unit, a first sample/hold circuit that samples a signal for when the photoelectric converter is reset and a second sample/hold circuit that samples a signal for when a photoelectric conversion operation is performed are connected to one vertical signal line. The pixel portion is arranged on a first substrate, a part of a group configured by the sample/hold unit and the converter is arranged on a second substrate, and another part of the group is arranged on a third substrate.

Abstract: An apparatus for increasing readout speed for Complimentary Metal Oxide Semiconductor (CMOS) image sensors. The apparatus is useful with CMOS image sensors in all high-tech industries and used to capture images digitally. Specifically, the apparatus provides a CMOS image sensor which employs an analog network-on-chip for increasing readout speed. The apparatus includes an array of carrier signal generators which are used to modulate the pixel exposure to allow all pixels to be read and discerned simultaneously.

Abstract: The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.

Abstract: A photoelectric conversion device comprising a pixel portion in which pixels each including a photoelectric converter are arranged, a sample/hold unit configured to sample a signal generated in the photoelectric converter via a vertical signal line and hold the signal, and a converter configured to perform an analog/digital conversion is provided. In the sample/hold unit, a first sample/hold circuit that samples a signal for when the photoelectric converter is reset and a second sample/hold circuit that samples a signal for when a photoelectric conversion operation is performed are connected to one vertical signal line. The pixel portion is arranged on a first substrate, a part of a group configured by the sample/hold unit and the converter is arranged on a second substrate, and another part of the group is arranged on a third substrate.

Abstract: The disclosure discloses a global shutter CMOS image sensor, which adopts non-uniform storage diffusion region doping to reduce the junction leakage at storage points, so as to ensure that with the increase of the depth of photodiodes and the increase of pixels, all carriers in rows read subsequently can be transferred to storage diffusion regions, the loss of the carriers in the storage diffusion regions is not caused when a global shutter transistor is turned on, and the carriers can be completely transferred from the storage diffusion regions to floating diffusion regions through second transfer transistors even if the number of rows of pixel units increases during reading-out row by row. The disclosure further discloses a method for making the global shutter CMOS image sensor.

Abstract: An imaging system includes a pixel array configured to generate image charge voltage signals in response to incident light received from an external scene. An infrared illumination source is deactivated during the capture of a first image of the external scene and activated during the capture of a second image of the external scene. An array of sample and hold circuits is coupled to the pixel array. Each sample and hold circuit is coupled to a respective pixel of the pixel array and includes first and second capacitors to store first and second image charge voltage signals of the captured first and second images, respectively. A column voltage domain differential amplifier is coupled to the first and second capacitors to determine a difference between the first and second image charge voltage signals to identify an object in a foreground of the external scene.

Abstract: A bridge circuit arrangement, method of providing said bridge circuit arrangement, and uses thereof are described. The bridge circuit arrangement comprises a first photodevice configured on a first arm, a second photodevice configured on a second arm, a first resistor configured on a third arm, and a second resistor configured on a fourth arm of the bridge. The first and second photodevice provide current flow.

Abstract: A solid-state imaging device includes a color filter unit disposed on a pixel array unit including pixels two-dimensionally arranged in a matrix and a conversion processing unit disposed on a substrate having the pixel array unit thereon. The color filter unit has a color arrangement in which a color serving as a primary component of a luminance signal is arranged in a checkerboard pattern and a plurality of colors serving as color information components are arranged in the other area of the checkerboard pattern. The conversion processing unit converts signals that are output from the pixels of the pixel array unit and that correspond to the color arrangement of the color filter unit into signals that correspond to a Bayer arrangement and outputs the converted signals.

Abstract: A solid-state imaging device includes a color filter unit disposed on a pixel array unit including pixels two-dimensionally arranged in a matrix and a conversion processing unit disposed on a substrate having the pixel array unit thereon. The color filter unit has a color arrangement in which a color serving as a primary component of a luminance signal is arranged in a checkerboard pattern and a plurality of colors serving as color information components are arranged in the other area of the checkerboard pattern. The conversion processing unit converts signals that are output from the pixels of the pixel array unit and that correspond to the color arrangement of the color filter unit into signals that correspond to a Bayer arrangement and outputs the converted signals.

Abstract: A process for using a terminal capable of capturing images to determine a probability of capturing the images according to information taken from contextual data provided by the image capture means. The process uses a terminal such as a mobile terminal comprising a first image data sensor and at least one contextual data sensor to automatically determine at least one probability of capturing an image or a sequence of images taking place within a time interval, the capture probability being calculated based on at least one response provided by one of the activated image data and/or contextual data sensors.

Abstract: An image sensor system using offset analog to digital converters. The analog to digital converters require a plurality of clock cycles to carry out the actual conversion. These conversions are offset in time from one another, so that at each clock cycle, new data is available. A system includes a CMOS active pixel image sensor having an array for photoreceptors to convert an image into an analog signal. The CMOS image sensor converts the analog signal into a digital signal using a pipelined analog to digital converter.