Abstract: An image sensing device is disclosed. The image sensing device includes a pixel array including a plurality of unit pixels, each of which is configured to generate a pixel signal in response to incident light.

Abstract: Provided are an imaging device capable of suppressing an error in inversion timing of a comparison result when an analog pixel signal is compared with a predetermined reference signal, and an electronic apparatus including the imaging device. An imaging device of the present disclosure includes: a load current source; a comparator that has an input transistor connected between the load current source and a signal line transmitting a signal read from a pixel; a first capacitor that inputs a predetermined reference signal to a gate electrode of the input transistor; and a second capacitor connected between the gate electrode of the input transistor and a reference potential node. Furthermore, an electronic apparatus of the present disclosure includes the imaging device having the above-described configuration.

Abstract: An embodiment method for estimating a missing or incorrect value in a table of values generated by a photosite matrix comprises a definition of a zone of the table comprising the value to be estimated and other values, referred to as neighboring values, and an estimation of the value to be estimated based on the primary neighboring values and the weight associated with these primary neighboring values, wherein a weight of each neighboring value, referred to as primary neighboring value, of the same colorimetric component as that of the missing or incorrect value to be estimated, is determined according to differences between neighboring values disposed on an axis and neighboring values disposed parallel with this axis and positioned in relation to this axis on the same side as the primary neighboring value for which the weight is determined.

Abstract: An electronic devices includes: an electronic component; a cabinet provided facing the electronic component, an adhesive sheet including two extending portions extending along two adjacent sides of the electronic component and a curved portion connecting the two extending portions, and being provided between the electronic component and the cabinet; and a tab provided in one of the two extending portions, and configured to enable the adhesive sheet to be pulled. The adhesive sheet has a notched portion provided on a side of the one of the extending portions closer to the curved portion and one side in a width direction of the adhesive sheet.

Abstract: The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.

Abstract: This application belongs to the technical field of semiconductor devices, and relates to a pixel circuit, a control method, and an image sensor, including: at least two pixel units arranged in an array, wherein transmission transistors of at least two pixels of at least one pixel unit are connected to a corresponding first group of transmission control lines, and a transmission transistor of one other pixel is connected to a corresponding second group of transmission control lines. Therefore, the pixel circuit, the control method and the image sensor provided in the present application can control the density of phase focus of the image sensor by controlling the first group of transmission control lines and the second group of transmission control lines without changing the structure of the pixel, the structure is simple, and the optical performance is good.

Abstract: An image sensor comprises a pixel array in which pixels are arranged in a matrix form, and phase-difference signals in a horizontal direction are output from a first pixel group of the pixel array via a first signal output line, and phase-difference signals in a vertical direction are output from a second pixel group, which is different from the first pixel group of the pixel array, via a second signal output line, and number of pixels of the phase-difference signals in the horizontal direction output via the first signal output line and number of pixels of the phase-difference signals in the vertical direction output via the second signal output line are different.

Abstract: A light source control device includes a light source controller configured to: cause a first light source to emit light in a visible wavelength band in a first entire line exposure period, which is an entire line exposure period in which all horizontal lines in an effective pixel area are simultaneously exposed; cause a second light source to emit excitation light in a second entire line exposure period, which is different from the first entire line exposure period; and cause the excitation light to be emitted in an excitation light emission period including the second entire line exposure period and a period, which is adjacent to the second entire line exposure period and is at least a part of a readout period during which charges accumulated in the plurality of pixels are read out, when controlling an operation of the second light source.

Abstract: In some implementations, a pixel array may include a near infrared (NIR) cut filter layer for visible light pixel sensors of the pixel array. The NIR cut filter layer is included in the pixel array to absorb or reflect NIR light for the visible light pixel sensors to reduce the amount of MR light absorbed by the visible light pixel sensors. This increases the accuracy of the color information provided by the visible light pixel sensors, which can be used to produce more accurate images. In some implementations, the visible light pixel sensors and/or MR pixel sensors may include high absorption regions to adjust the orientation of the angle of refraction for the visible light pixel sensors and/or the MR pixel sensors, which may increase the quantum efficiency of the visible light pixel sensors and/or the MR pixel sensors.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus that enable simultaneous acquisition of a signal for generating a high dynamic range image and a signal for detecting a phase difference. The solid-state imaging device includes a plurality of pixel sets each including color filters of the same color, for a plurality of colors, each pixel set including a plurality of pixels. Each pixel includes a plurality of photodiodes PD. The present technology can be applied, for example, to a solid-state imaging device that generates a high dynamic range image and detects a phase difference, and the like.

Abstract: The present technology relates to an image pickup element, a control method, and an image pickup device which realize easier and more diversified data output. In one aspect of the present technology, a plurality of signal lines for transmitting a pixel signal read from a pixel is allocated to each column, and different reading modes of the pixel signals are respectively allocated to the signal lines of each column. Regarding each column of the pixel array connected to the pixel corresponding to the mode, the pixel signal is read from the pixel connected to the signal line corresponding to the reading mode of the pixel signal in the mode, and the read pixel signal is transmitted via the signal line. The present technology is applied to, for example, an image pickup element and an image pickup device.

Abstract: Imaging systems and techniques are described. An imaging system determines, based on image data of a scene received from an image sensor, a first plurality of pixel values corresponding to a first electromagnetic (EM) frequency domain and a second plurality of pixel values corresponding to a second EM frequency domain. The imaging system reduces the first plurality of pixel values using a plurality of cross-domain contamination values (based on the second plurality of pixel values) to generate a third plurality of pixel values. The imaging system determines a reconstructed pixel value based on a combination of at least an overexposed pixel value of the first plurality of pixel values and a corresponding pixel of the third plurality of pixel values. The imaging system outputs a reconstructed image that includes the reconstructed pixel value and a subset of the third plurality of pixel values.

Abstract: A display system suitable for use inside an MRI system bore to display images to a patient undergoing an MRI procedure. The display system includes a curved display structure fitted inside the MRI bore, and having a width and length sufficient to present images to the patient inside the tunnel. First and second EMI shielding layers sandwich the curved display structure. A display electronics module is electrically connected to the curved display structure to provide video drive signals to the curved display structure. A housing for the display electronics module is configured to provide shielding to prevent EM signals from within the housing to affect MRI image processing.

Abstract: In accordance with some embodiments, systems, methods, and media for improving signal-to-noise ratio in single-photon data are provided. In some embodiments, a system comprises: a processor programmed to: generate, for each of a plurality of pixel locations, initial photon flux estimates based on a first set of photon transients including photon transients associated with the pixel location and neighboring pixel locations, each of the photon transients comprises a histogram of photon counts; identify, for a scene patch associated with each of the plurality of pixel locations, one or more similar scene patches using intensity information for each of the plurality of pixel locations; and generate, for each of the plurality of pixel locations, final photon flux estimates based on a second set of photon transients including photon transients associated with the scene patch and each of the one or more similar scene patches.

Abstract: A polarization imaging unit 20 acquires a polarized image including polarization pixels with a plurality of polarization directions. An information compression unit 40 sets reference image information based on polarized image information of reference polarization pixels with at least a plurality of polarization directions in the polarized image and generates difference information between the polarized image information of each of polarization pixels different from the reference polarization pixels in the polarized image and the reference image information. In addition, the information compression unit 40 reduces the amount of information of the difference information generated for each of the polarization pixels with the plurality of polarization directions to generate compressed image information including the reference image information and the difference information with the reduced amount of information.

Abstract: An image sensing device includes photoelectric conversion elements structured to convert light into electrical signals, and a color filter layer structured to filter incident light towards the photoelectric conversion elements depending on a wavelength range of the incident light corresponding to colors of the incident light to allow the filtered light to be detected by the photoelectric conversion elements corresponding to the colors of the incident light. The color filter layer includes a plurality of first color filters as part of the different filters and structured to allow light at a wavelength range corresponding to a first color and arranged adjacent to each other. A distance between at least one of the first color filters and a corresponding photoelectric conversion element formed below the at least one of the first color filters is different from a distance between the remaining first color filters and corresponding photoelectric conversion elements, respectively.

Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes two pixel arrays each having multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by a time ratio of the line time difference and the frame period. The TDI sensor doubles a number of times of integrating pixel data corresponding to the same position of a scene by arranging two separately operated pixel arrays.

Abstract: An image sensing device includes a pixel array including a (2×2) array that includes two first pixels, a second pixel, and a third pixel, wherein the first to third pixels have a pixel area and include first to third optical filters that are configured to transmit light of different colors, respectively, and wherein the second pixel or the third pixel includes a grid structure located along a boundary of the second pixel or the third pixel, and wherein the first pixel includes a red optical filter and has a first light reception area that is greater than a second light reception area of the second pixel or a third light reception area of the third pixel.

Abstract: A pixel addition processing unit 35 adds pupil division pixel signals with a plurality of different addition patterns in pupil units to generate a pixel addition image for each addition pattern. Further, the pixel addition processing unit 35 may use a pupil division pixel signal in which a sensitivity difference between pupil division pixels has been corrected, and the addition pattern may be set on the basis of image characteristic information calculated by using the pupil division pixel signal. A super-resolution processing unit 36 performs super-resolution processing using a pixel addition image signal generated for each addition pattern by the pixel addition processing unit 35 to generate an image signal with a higher resolution than that of the pixel addition image signal. A high-resolution image can be generated using pupil division.

Abstract: An image sensing device is provided to comprise: a pixel array of pixels that are operable to sense light to produce pixel signals and are operable to operate in one of a plurality of modes in sensing of light, wherein a first pixel of the pixel array is controlled to operate in a mode selected from the plurality of modes and configured to output a pixel signal in response to light incident onto the first pixel; and an analog-to-digital converter (ADC) coupled to the pixel array to receive the pixel signal from the first pixel and configured to set, based on the mode selected for the first pixel in generating the pixel signal, an input range indicating a voltage range of the pixel signal and perform an analog to digital conversion of the pixel signal generated by the first pixel to produce pixel data representing the pixel signal based on the input range of the analog-to-digital converter (ADC).

Abstract: An image sensing device includes a first substrate structured to support a pixel array that includes a plurality of unit pixels arranged in a first direction and a second direction and configured to detect incident light to produce pixel signals carrying image information in the incident light; a second substrate structured to support one or more circuits for operation of the image sensing device including receiving a pixel signal from the plurality of unit pixels; and a shielding layer disposed between the first substrate and the second substrate, wherein the shielding layer includes shielding driver circuitry and conductive lines coupled to the shielding driver circuitry to receive electrical currents which produce electromagnetic fields to offset electromagnetic fields induced by currents in the one or more circuits supported by the second substrate.

Abstract: An image sensor includes a pixel defining pattern in a mesh form. A first division pattern divides a pixel area into two halves. A second division pattern divides the pixel area into two halves. A first diagonal division pattern divides the pixel area into two halves. A second diagonal division pattern divides the pixel area into two halves. First through eighth photodiodes are arranged in the pixel area.

Abstract: A direct-bond hybridization (DBH) method is provided to assemble a sensor wafer device. The DBH method includes fabricating an optical element on a handle wafer and depositing first oxide with n-x thickness on the optical element where n is an expected final oxide thickness of the sensor wafer, depositing second oxide with x thickness onto a sensor wafer, executing layer transfer of the optical element by a DBH fusion bond technique to the sensor wafer whereby the first and second oxides form an oxide layer of n thickness between the optical element and the sensor wafer and removing the handle wafer.

Abstract: A photoelectric conversion apparatus includes a pixel array having pixels arranged to form rows and columns and column signal lines configured to output noise signals and optical signals of the pixels, a driver configured to drive the pixels so that the optical signal is output following the noise signal from each pixel, A/D converters configured to perform A/D conversion to convert the noise signals output to the column signal lines into noise data and to subsequently perform A/D conversion to covert the optical signals output to the column signal lines into optical data, a data hold circuit, and a transmitter configured to transmit the noise data converted by the A/D converters to the data hold circuit and to subsequently transmit the optical data converted by the A/D converters to the data hold circuit.

Abstract: An image sensor and a method of manufacturing thereof are provided. The image sensor includes a substrate, a grid structure, and color filters. The substrate includes a pixel separation structure defining pixel regions, and a sub-pixel regions for each pixel region. The grid structure is disposed on the substrate and includes first fence segments provided between the sub-pixel regions, and second fence segments provided between neighboring pixel regions. The grid structure defines openings corresponding respectively to the sub-pixel regions. The color filters are disposed in the openings defined by the grid structure. Each of the color filters has a flat top surface and the flat top surface of each color filter is parallel to a bottom surface thereof.

Abstract: An image sensor bridge interface is provided. The interface is situated between an image sensor and a processor. The interface comprises an integrated circuit. The integrated circuit comprises a Field-Programmable Gate Array (FPGA) decoupled from both image signals provided from the image sensor and a processor connected to the integrated circuit. The FPGA separates Ultraviolet (UV) and Infrared (IR) data values from image sensor-provided image data and embeds the UV and IR data values within the horizontal blanking, vertical blanking, and/or active video components of a video feed. The video feed provided from the integrated circuit to the processor using a standard video interface, and the processor providing the video feed or providing UV images, IR images, and Red, Green, and Blue (RGB) images separated from the video feed to a computing core of a host device.

Abstract: An image sensor for electronic cameras has a plurality of pixels for generating exposure-dependent signals, wherein a respective pixel at least comprises: a light-sensitive element to generate electrical charge from incident light; a readout node; a transfer gate to selectively couple the light-sensitive element to the readout node; a converter transistor to convert the charge present at the readout node into a voltage signal at a signal output; and a selection switch that is connected to the signal output of the converter transistor to selectively couple the signal output of the converter transistor to an associated readout line of the image sensor. The respective pixel has an electrically conductive shielding structure that at least partly surrounds the readout node and that is set or can be set to an electrical potential that depends on the voltage signal of the converter transistor.

Abstract: An image sensing device is disclosed. The image sensing device includes a pixel array including a plurality of unit pixels, each of which is configured to generate a pixel signal in response to incident light.

Abstract: An image sensor includes a plurality of pixels configured to receive an optical signal incident through a first lens portion; a planarization layer that has a same refractive index as a refractive index of the first lens portion; a second lens portion that is configured to classify the optical signal incident through the first lens portion according to an incidence angle, and is configured to deliver the optical signal to each of the plurality of pixels; and image processing circuitry configured to generate a subject image by combining one or more subimages obtained from the optical signal, wherein the planarization layer is arranged between the second lens portion and the plurality of pixels.

Abstract: A solid-state imaging apparatus according to an embodiment of the present disclosure includes a photoelectric transducer, a transfer transistor, a floating diffusion, a reset transistor, an amplifier transistor, and a selection transistor. The reset transistor includes a gate insulating film formed thinner than the gate insulating film of the transfer transistor.

Abstract: A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.

Abstract: An analog-to-digital converter (ADC) device equipped with a conversion suspension function and an associated operation method thereof are provided. The ADC device includes: an interleaved clock controller, arranged to generate a first clock signal and a second clock signal according to a master clock signal; and a multi-ADC circuit, coupled to the interleaved clock controller, arranged to perform analog-to-digital conversion. The multi-ADC circuit includes a first ADC and a second ADC, wherein the first ADC performs sampling and conversion operations according to the first clock signal, and the second ADC performs sampling and conversion operations according to the second clock signal. Based on the timing control of the first clock signal and the second clock signal, when any ADC of the first ADC and the second ADC is performing a sampling operation, the other ADC of the first ADC and the second ADC suspends conversion.

Abstract: Disclosed is a time delayed integration (TDI) image sensor capable of exposure control, including a pixel area including a plurality of line sensors, a light mask configured to block the incidence of light on part of the line sensors, and a scan controller configured to generate a line control signal and an exposure control signal based on the line trigger signal and to control movement of charges in the plurality of line sensors based on the generated line control signal and exposure control signal.

Abstract: According to various embodiments, the system and method disclosed herein process light-field image data so as to mitigate lens flare effects. A light-field image may be captured with a light-field image capture device with a microlens array and received in a data store. A plurality of flare-affected pixels may be identified in the light-field image. The flare-affected pixels may have flare-affected pixel values. Flare-corrected pixel values may be generated for the flare-affected pixels. Relative to the flare-affected pixel values, the flare-corrected pixel values may at least partially remove the lens flare effects. The flare-corrected pixel values may be used to generate a corrected light-field image in which the lens flare effects are at least partially corrected. The corrected light-field image may be displayed on a display screen.

Abstract: According to various embodiments, the system and method disclosed herein process light-field image data so as to mitigate lens flare effects. A light-field image may be captured with a light-field image capture device with a microlens array and received in a data store. A plurality of flare-affected pixels may be identified in the light-field image. The flare-affected pixels may have flare-affected pixel values. Flare-corrected pixel values may be generated for the flare-affected pixels. Relative to the flare-affected pixel values, the flare-corrected pixel values may at least partially remove the lens flare effects. The flare-corrected pixel values may be used to generate a corrected light-field image in which the lens flare effects are at least partially corrected. The corrected light-field image may be displayed on a display screen.

Abstract: A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage.

Abstract: A digital double sampling method, a related complementary metal oxide semiconductor (CMOS) image sensor, and a digital camera comprising the CMOS image sensor are disclosed. The method includes generating first digital data corresponding to an initial voltage level apparent in a pixel in response to a reset signal, inverting the first digital data, outputting a detection voltage corresponding to image data received from outside of the CMOS image sensor, and counting in synchronization with a clock signal, starting from an initial value equal to the inverted first digital data, and for an amount of time responsive to a voltage level of the detection voltage.

Abstract: A imaging apparatus controls a lighting unit such that when the first recording medium is selected, the lighting unit is turned into a state different from a predetermined state in a state where recording into the first recording medium is stopped while recording into the second recording medium, and turned into the predetermined state in accordance with a recording start instruction of the first recording medium during recording into the second recording medium, and when the second recording medium is selected, the lighting unit is turned into the state different from the predetermined state in a state where recording into the second recording medium is stopped while recording into the first recording medium, and turned into the predetermined state in accordance with the recording start instruction of the second recording medium during recording into the first recording medium.

Abstract: A light emitting apparatus including: a plurality of light emitting elements; a drive circuit including a transistor and a capacitor having one end connected to a gate of the transistor; and a signal supply circuit for receiving a digital gradation signal and outputting an analog voltage signal to the drive circuit, including a computation circuit configured to correct the input digital gradation signal to generate a corrected digital gradation signal, in which the drive circuit is configured to conduct an auto-zero operation which reduce the gate-source voltage of the transistor to a threshold voltage by flowing the drain current to the capacitor, and the computation circuit is configured to generate the corrected digital gradation signal by multiplying a correction coefficient to the input digital gradation signal subtracted by a particular signal common to the plurality of light emitting elements.

Abstract: The present invention provides a method for obtaining a composite image, which performs a mathematically correct image-processing on images obtained by wide-angle lenses which are rotationally symmetrical with regard to an optical axis, to achieve a desirable projection system. The present invention also provides a variety of imaging systems using the method. Further, the present invention provides a CMOS image sensor which has an accurate arrangement of pixels to perform image processing using hardware without the need for image processing by software.

Abstract: A sense amplifier having a negative capacitance circuit receives differential input signals via a pair of data lines, and senses and amplifies a voltage difference between differential output signals corresponding to the differential input signals as loaded by the negative capacitance circuit using a differential-to-single-ended amplifier to generate a corresponding data output signal.

Abstract: A chip with a built-in self-test (BIST) component capable of testing the linearity of an ADC is described herein. The BIST component uses hardware registers to facilitate a sliding histogram technique to save space on the chip. A subset of detected digital codes are analyzed, and DNL and INL calculations are performed by a controller to determine whether any of the digital codes in the subset exceed maximum or minimum DNL and INL thresholds. New digital codes being detected by the ADC are added to the subset as lower-value digital codes are pushed out of the subset, maintaining the same number of digital codes being analyzed as the subset moves from lower codes detected during lower voltages to higher codes detected at higher voltages. A synchronizer and pointer ensure that the subset moves through the digital codes at the same rate as the analog input ramp source.

Abstract: An image sensing device includes a first circuit unit configured to convert an image signal provided from a first pixel into a digital value and generate first image data, a second circuit unit configured to convert an image signal provided from a second pixel into a digital value and generate second image data, and a processing unit configured to receive the first image data and the second image data at a substantially same time and sequentially output the first image data and the second image data according to a predetermined speed.

Abstract: In an A/D conversion circuit and an imaging device, an upper counter acquires a first upper count value by performing counting using one output signal, which constitutes a first lower phase signal output from a delay circuit, as a count clock. After values of bits constituting the first upper count value are inverted, the upper counter acquires a second upper count value by performing counting using one output signal, which constitutes a second lower phase signal output from the delay circuit, as a count clock, and further performing counting based on an upper count clock output from a lower counter. A modification unit modifies a logic state of a count clock to a predetermined state when the count clock of the upper counter is switched.

Abstract: When a conventional circuit is used in an image sensor which employs a pixel sharing technique, selection of pixels is not properly performed, that is, an invalid operation may be performed. To address this problem, a first storage unit which stores an address of a reading row, a second storage unit which stores an address of a shutter row, and a third storage unit for controlling an element shared by a plurality of pixels are provided in a row selection unit.

Abstract: A CMOS imager is integrated on a single substrate along with logic and support circuitry for decoding and processing optical information received by the CMOS imager. Integrating a CMOS imager and peripheral circuitry allows for a single chip image sensing device.

Abstract: A solid-state imaging device includes a pixel array area in which an unit pixel including a photoelectric conversion element converting optical signals to signal charges and a transfer gate transferring the signal charges which have been photoelectrically converted in the photoelectric conversion element is two-dimensionally arranged in a matrix form, a supply voltage control means for supplying plural first control voltages sequentially to a control electrode of the transfer gate, and a driving means for performing driving of reading out signal charges transferred by the transfer gate when the plural first control voltages are sequentially applied twice and more.

Abstract: The prevent invention is to provide a solid-state imaging device having a electrode configuration applicable to a progressive scan, and able to reduce a obstruction of incident light at the periphery of a light receiving portion, a method of producing the same, a camera including the same. A first transfer electrode, a second transfer electrode, and a third transfer electrode which have a single layer transfer electrode configuration are repeatedly arranged in a vertical direction. The first transfer electrodes are connected in a horizontal direction by an inter-pixel interconnection formed in the same layer. Shunt interconnections are formed in the horizontal direction and in the vertical direction above the transfer layers. The shunt interconnection connected to the second transfer interconnection is formed on the inter-pixel interconnection. The shunt interconnection connected to the third transfer electrode is formed above the transfer electrodes.

Abstract: A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of received light, and a color filter layer provided on the imaging device array, with an infrared light absorbing dye being contained in the color filter layer.

Abstract: An electron beam apparatus comprises a TDI sensor 64 and a feed-through device 50. The feed-through device has a socket contact 54 for interconnecting a pin 52 attached to a flanged 51 for separating different environments and the other pin 53 making a pair with the pin 52, in which the pin 52, the other pin 53 and the socket contact 54 together construct a connecting block, and the socket contact 54 has an elastic member 61. Accordingly, even if a large number of connecting blocks are provided, the connecting force may be kept to such a low level as to prevent the breakage in the sensor. The pin 53 is connected with the TDI sensor 64, in which a pixel array has been adaptively configured based on the optical characteristic of an image projecting optical system. That sensor has a number of integration stages that can reduce the field of view of the image projecting optical system to as small as possible so that a maximal acceptable distortion within the field of view may be set larger.