Abstract: A reflectometer characterizes the reflectance properties of a test material. The reflectometer includes a radiation subsystem that generates and directs radiation onto a test material at a plurality of incident angles. An elliptical reflector assembly has one or more reflectors with a first and second foci. A holder positions the test material at the first focus of the reflectors. One or more lenses are located within a first focal length of the second focus of the reflectors. The lenses receive a first angular image that is reflected by the reflector. The holder is rotatable relative to the radiation subsystem. Stepper motors and encoders vary the angular position of the incident angle and an azimuth angle of the test material. A computer records an angular image for each azimuth and incident angle to completely characterize the reflectance properties of the test material.

Abstract: The surface form of a semiconductor thin film such as a polysilicon film 13 formed on a semiconductor substrate 11 is measured through spectro-ellipsometry or measured by performing an IPA quantitative analysis through GC. Mass (gas chromatography) after exposing the semiconductor thin film to IPA (isopropyl alcohol) vapor and drying the semiconductor thin film. Through either of these methods the surface form of the polysilicon film easily and quickly measured.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as rouglness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: A method and system for estimating the roughness and the contamination of a surface. A preferred embodiment of the present invention makes use of a mathematical model which gives indications of the metal roughness, expressed as the ratio of metal volume to air volume, and the contamination thickness values of a metal substrate (e.g. gold) for a determined contamination (e.g. organic). This model is based on a series of tables which represent the expected values of &psgr;, i.e. the ratio between the amplitudes of the incident beam on the two polarization planes multiplied by the ratio of the amplitudes of the reflected beam on the polarization planes, and &Dgr;, i.e. the difference between the phases on the two polarization planes of the incident beam and the reflected beam, for a gold substrate having a predetermined roughness and a predetermined type of contamination (organic).

Abstract: The invention relates to a method and a measuring arrangement for determining roughness of paper or paperboard. The paper or paperboard surface is illuminated with collimated light substantially parallel with the normal of the paper or paperboard surface. An image is produced from the paper or paperboard surface by means of reflected optical radiation. The reflected optical radiation is used for producing an image of the paper or paperboard surface onto the pixels of the camera's detector surface, each of the pixels imaging an area in the order of micrometers of the paper or paperboard surface. An aperture provided in front of the camera is used for adjusting the depth of focus of the image, which affects the measurement of roughness. Roughness of paper or paperboard is measured on the basis of the intensity of the pixels on the camera's detector surface.

Abstract: A surface inspection device irradiates a laser beam onto the surface of a sample, scans the surface two-dimensionally, and detects the intensities of the s-polarized light component and p-polarized light component of the reflected laser beam. RR (reflectance ratio), which is the ratio of the reflective intensities of the s- and p-polarized light components, is calculated for each position of the surface of the sample, and the two-dimensional distribution of RR on the surface of the sample is detected. The distribution width of this measured RR is compared with the natural width for a clean sample, and the surface of the sample is determined to be contaminated when, as the result of comparison, the RR distribution width diverges from the natural width. The absence or presence of contamination on the microscopically rough surface of a sample can therefore be quickly and easily determined based on the RR of the reflective intensities of the s- and p-polarized light components.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: A method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace is provided. The multi-zone furnace bakes a plurality of wafers within each zone for a first bake time. A film thickness of at least one wafer baked in each zone of the furnace is measured using a metrology tool. A film thickness optimization unit determines a deposition rate for the at least one wafer within each zone, with the deposition rate being determined as a function of the film thickness of the wafer and the first bake time. The film thickness optimization unit then determines a second bake time to bake a subsequent set of wafers, and the subsequent set of wafers is baked in the furnace for the second bake time.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: The present invention provides a light illuminating method, a surface examining method using the light illuminating method, and apparatuses for performing these methods. In the surface illuminating apparatus for illuminating an object with a light beam from a light source through a lens member for illumination, the lens member for illumination has a characteristics with respect to a longitudinal aberration caused by a spherical aberration in the light source side of the lens for illumination, that an amount of shift from a paraxial image surface to image formation points gradually increase or decrease, with an increase in height of light incidence into the lens; and the light source is set at a position in an outside of a group of the image formation points.

Abstract: Optical characteristic measuring systems and methods such as for determining the color or other optical characteristics of teeth are disclosed. Perimeter receiver fiber optics are spaced apart from a source fiber optic and receive light from the surface of the object/tooth being measured. Light from the perimeter fiber optics pass to a variety of filters. The system utilizes the perimeter receiver fiber optics to determine information regarding the height and angle of the probe with respect to the object/tooth being measured. Under processor control, the optical characteristics measurement may be made at a predetermined height and angle. Various color spectral photometer arrangements are disclosed. Translucency, fluorescence, gloss and/or surface texture data also may be obtained. Audio feedback may be provided to guide operator use of the system. The probe may have a removable or shielded tip for contamination prevention. A method of producing dental prostheses based on measured data also is disclosed.

Abstract: A method and an apparatus for inspecting a streak on a sheet object to be inspected are provided. The apparatus includes a micro-filtering unit for enlarging a width of defect data and an unevenness filtering unit connected to the micro-filtering unit in series, for detecting the defect data having a certain measure of width. Inputting image data, which has been taken by a line sensor camera, through an image input unit, the micro-filtering unit outputs data of a microscopic streak with low contrast to the unevenness filtering unit while enlarging the width of the streak.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanomneters. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: A flatness measuring apparatus measures flatness of a substrate on which a specific pattern is to be formed by adjusting focus to a forming reference flat plane obtained based upon height data corresponding to specific measuring points of the substrate. The flatness measuring apparatus includes: an arithmetic operation device that obtains height data at predetermined measuring points of the substrate, determines a flatness judging criterion flat plane based upon height data at measuring points located at positions at which the specific measuring points are located through an arithmetic operation, determines quantities of displacement at the predetermined measuring points relative to the flatness judging criterion flat plane through an arithmetic operation, and measures the flatness of the substrate based upon the quantities of displacement.

Abstract: A method enables measurement of the configuration of a pattern with irregularity in a wide surface region with a high accuracy and in a single operation. The surface inspecting method includes irradiating a measurement objective region with an illuminating light in an oblique direction thereto; forming an image of reflected light from the measurement objective region, the formed image of reflected light having points with luminance corresponding to the incident angle of the illuminating light at respective points on the measurement objective region picking up the formed image to collect luminance data of respective points in the measurement objective region; analyzing spatial frequencies of the luminance data with respect to positions in a desired direction to make a plurality of spatial frequency data; and extracting a desired frequency component from the plurality of spatial frequency data.

Abstract: A method for measuring the parameter of a rough film is presented in this invention. In which the optical property of a rough film is further defined by utilizing the characteristics of an optical instrument and silicon film, without disturbance from noise in measurement. Therefore, good or bad the rough film is can be detected effectively, further, a handy method can be offered to control the stability in the manufacturing process. The invention is performed by choosing a measuring light with wavelength in a certain range and an optical instrument, then comparing the result with a standard value to monitor the result of the manufacturing process of the rough film.

Abstract: Color/optical characteristics measuring systems and methods are disclosed. Perimeter receiver fiber optics/elements are spaced apart from a central source fiber optic/element and received light reflected from the surface of the object is measured. Light from the perimeter fiber optics pass to a variety of filters. The system utilizes the perimeter receiver fiber optics to determine information regarding the height and angle of the probe with respect to the object being measured. Under processor control, the color measurement may be made at a predetermined height and angle. Various color spectral photometer arrangements are disclosed. Translucency, fluorescence and/or surface texture data also may be obtained. Audio feedback may be provided to guide operator use of the system. The probe may have a removable or shielded tip for contamination prevention.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.

Abstract: A test structure is presented to be formed on a patterned structure and to be used for controlling a CMP process applied to the patterned structure, which has a pattern area formed by spaced-apart metal-containing regions representative of real features of the patterned structure. The test structure thus undergoes the same CMP processing as the pattern area. The test structure comprises at least one pattern zone in the form of a metal area with at least one region included in the metal area and made of a material relatively transparent with respect to incident light, as compared to that of the metal.

Abstract: A surface inspection device irradiates a laser beam onto the surface of a sample, scans the surface two-dimensionally, and detects the intensities of the s-polarized light component and p-polarized light component of the reflected laser beam. RR (reflectance ratio), which is the ratio of the reflective intensities of the s- and p-polarized light components, is calculated for each position of the surface of the sample, and the two-dimensional distribution of RR on the surface of the sample is detected. The distribution width of this measured RR is compared with the natural width for a clean sample, and the surface of the sample is determined to be contaminated when, as the result of comparison, the RR distribution width diverges from the natural width. The absence or presence of contamination on the microscopically rough surface of a sample can therefore be quickly and easily determined based on the RR of the reflective intensities of the s- and p-polarized light components.

Abstract: Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used.