Abstract: A magnetic sensor device has a multipolar magnet having a first surface and a second surface, which is opposite to the first surface, in which magnetic poles of differing polarity are arranged alternately to divide the first surface radially into n regions (where n>4), and a magnetic detection part provided to be opposite to the first surface of the multipolar magnet. The multipolar magnet is provided to be capable of relative movement in at least one direction in a plane substantially parallel to the first surface and the second surface. The magnetic detection part outputs a signal corresponding to change in the magnetic field accompanying relative movement of the multipolar magnet, and the geometric centers of the multipolar magnet and the magnetic detection part substantially match in a direction orthogonal to the first surface.

Abstract: An integrated AMR sensor includes a half bridge with two resistors, a Wheatstone bridge with four resistors, or a first Wheatstone bridge with four resistors in an orthogonal configuration, and a second Wheatstone bridge with four resistors in an orthogonal configuration, oriented at 45 degrees with respect to the first Wheatstone bridge. Each resistor includes first magnetoresistive segments with current flow directions oriented at a first tilt angle with respect to a reference direction of the resistor, and second magnetoresistive segments with current flow directions oriented at a second tilt angle with respect to the reference direction. The tilt angles are selected to advantageously cancel angular errors due to shape anisotropies of the magnetoresistive segments. In another implementation, the disclosed system/method include a method for identifying tilt angles which cancel angular errors due to shape anisotropies of the magnetoresistive segments.

Abstract: Magnetoelectric sensors that can be manufactured using known methods of thin film technology and output an ME voltage that is many times higher for a predetermined magnetic field than the known cantilever-beam sensor. The design that is termed separator ME sensor is characterized by the arrangement of a thick dielectric layer (14) between the ferroelectric (10) and the magnetostrictive phases (12), and by an electrode arrangement (18) applied on one side of the ferroelectric (10) and that is engineered to tap the ME voltage along the extent of the layer. Advantageously, it can be manufactured easily by coating conventional dielectric substrates (14) on the front and rear with one each of the functional layers (10, 12).

Abstract: A multi-sensor reader that includes a first sensor that has a sensing layer with a magnetization that changes according to an external magnetic field. The first sensor also includes first and second side biasing magnets having a magnetization substantially along a first direction. The first and second side biasing magnets align the magnetization of the sensing layer substantially along the first direction when the sensing layer is not substantially influenced by the external magnetic field. The multi-sensor reader further includes a second sensor that is stacked over the first sensor. The second sensor includes a reference layer that has a magnetization that is set substantially along a second direction.

Abstract: Magnetic field sensor designs that provide both increased directionality and proximate coupling desirable for improved directionality and sensitivity and methods for fabricating them.

Abstract: A method according to one embodiment includes applying a coating to a media facing side of a module, the module having first and second transducers of different magnetic transducer types positioned towards the media facing side of the module, wherein the different transducer types are selected from a group consisting of data reader transducers, servo reader transducers, write transducers, piggyback read-write transducers and merged read-write transducers; wherein the coating forms at least a portion of a first protection structure for protecting the first transducer; and wherein the second transducer has either no protection or is protected by a second protection structure that is different than the first protection structure.

Abstract: In an embodiment, a magnetic field sensor comprises a substrate and a first magnetoresistive element supported by the substrate. The magnetic field sensor also includes a second magnetoresistive element supported by the substrate and coupled in series with the first magnetoresistive element to form a voltage node between the first and second magnetoresistive elements, and at which an output voltage is provided that changes in response to an external magnetic field. The magnetic field sensor also includes a magnetic source that produces a local magnetic field having a strength sufficient to bias the first magnetoresistive element to a resistive value that is substantially resistant to changing in response to the external magnetic field. In embodiments, additional magnetoresistive elements are included to form an H-bridge circuit.

Abstract: The present invention generally relates to a read head in a magnetic recording head. The read head utilizes two reader elements that are stacked in the down track direction within the same read gap to improve resolution and SNR by combining the signals from the two reader elements. The output waveform from each read element is asymmetric in the down track direction; however, by use of equalizer settings and waveform combining the algorithm in signal processing, the combined waveform has a similar or better resolution and higher SNR compared to a single read element in a smaller read gap.

Abstract: Implementations described and claimed herein provide a stacked dual reader with a bottom sensor stack and a top sensor stack wherein the bottom sensor stack and the top sensor stack are mirrored along a down-track direction.

Abstract: Implementations described and claimed herein provide a dual reader wherein a bottom shield is attached to side shields.

Abstract: Implementations described and claimed herein provide a stacked dual reader with a bottom sensor stack and a top sensor stack wherein the bottom sensor stack and the top sensor stack are mirrored along a down-track direction.

Abstract: A system including transmission lines, read elements, and differential amplifiers. The read elements are connected in series. Each of the read elements is connected to a respective pair of the transmission lines. The differential amplifiers are connected respectively to the read elements via the transmission lines. The differential amplifiers are configured to amplify differential signals received from the respective pairs of the transmission lines.

Abstract: In certain embodiments, an apparatus includes a magnetoresistive (MR) sensor having a first and second electrode positioned at a first side of the MR sensor and a third electrode positioned at a second side of the MR sensor opposite the first side. In certain embodiments, an apparatus includes first and second electrodes coupled to an MR sensor and positioned at a first side of the MR sensor. The first and second electrodes are spaced apart from each other and are positioned over an area of the MR sensor that has a positive or negative asymmetry.

Abstract: Implementations described and claimed herein provide a dual reader wherein a bottom shield is attached to side shields.

Abstract: Implementations described and claimed herein provide a stacked dual reader with a bottom sensor stack and a top sensor stack wherein the bottom sensor stack and the top sensor stack are mirrored along a down-track direction.

Abstract: An apparatus can be generally directed to a magnetic stack having a magnetically free layer positioned on an air bearing surface (ABS). The magnetically free layer can be biased to a predetermined magnetization in various embodiments by a biasing structure that is coupled with the magnetically free layer and positioned distal the ABS.

Abstract: A method to measure a magnetic field is provided. The method includes applying an alternating drive current to a drive strap overlaying a magnetoresistive sensor to shift an operating point of the magnetoresistive sensor to a low noise region. An alternating magnetic drive field is generated in the magnetoresistive sensor by the alternating drive current. When the magnetic field to be measured is superimposed on the alternating magnetic drive field in the magnetoresistive sensor, the method further comprises extracting a second harmonic component of an output of the magnetoresistive sensor. The magnetic field to be measured is proportional to a signed amplitude of the extracted second harmonic component.

Abstract: A magnetoresistive read sensor with improved sensitivity and stability is described. The sensor is a trilayer stack positioned between two electrodes. The trilayer stack has two free layers separated by a nonmagnetic layer and a biasing magnet positioned at the rear of the stack and separated from the air bearing surface. Current in the sensor is confined to regions close to the air bearing surface by an insulator layer to enhance reader sensitivity.

Abstract: An apparatus and associated method is presently disclosed for a data sensing element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination that has a spacer layer disposed between a first and second ferromagnetic free layer. The lamination having at least one free layer with a shape feature that increases a scissoring angle between the free layers.

Abstract: An apparatus for sensing magnetic domains in a patterned media that includes a first sensing element and a second sensing element in electrical communication with the first sensing element. The first sensing element has an output voltage lead and the second sensing element has an output voltage lead. The patterned media may be a bit patterned media or a track patterned media.

Abstract: A graphene magnetic field sensor has a ferromagnetic biasing layer located beneath and in close proximity to the graphene sense layer. The sensor includes a suitable substrate, the ferromagnetic biasing layer, the graphene sense layer, and an electrically insulating underlayer between the ferromagnetic biasing layer and the graphene sense layer. The underlayer may be a hexagonal boron-nitride (h-BN) layer, and the sensor may include a seed layer to facilitate the growth of the h-BN underlayer. The ferromagnetic biasing layer has perpendicular magnetic anisotropy with its magnetic moment oriented substantially perpendicular to the plane of the layer. The graphene magnetic field sensor based on the extraordinary magnetoresistance (EMR) effect may function as the magnetoresistive read head in a magnetic recording disk drive.

Abstract: A magnetic field detecting element comprises a stack including upper and lower magnetic layers, and a non-magnetic intermediate layer sandwiched therebetween, wherein magnetization of the magnetic layers changes in accordance with an external magnetic field; upper and lower shield electrode layers sandwiching the stack in a direction of stacking, wherein the upper and lower shield electrode layers supply sense current in the direction of stacking, and magnetically shield the stack; a bias magnetic layer provided on a surface of the stack opposite to an air bearing surface, and wherein the bias magnetic layer applies a bias magnetic field to the upper and lower magnetic layers in a direction perpendicular to the air bearing surface; and insulating layers provided on both sides of the stack in a track width direction thereof, wherein the stack has a stepped portion formed at the non-magnetic intermediate layer.

Abstract: A magnetic head assembly of the present invention includes a head rail having a plurality of head element portions each including a MR element and sliding portions that come into contact with a magnetic tape, and a protective film on a magnetic tape sliding surface of the head element portions and the sliding portions, wherein the protective film is formed in a portion other than the vicinity of both ends of the head rail in a traveling direction, and an outermost surface of the protective film, on which a magnetic tape is capable of sliding, is formed flat. Thus, a magnetic head assembly used in a magnetic tape apparatus can be provided, in which an output does not decrease due to the abrasion deformation of the head element portions and the increase in spacing by the adhesion of stain.

Abstract: A reading element of a magnetic head has a first magnetoresistive effect part (first MR part) and a second magnetoresistive effect part (second MR part), an electrical resistance of the first MR part changing according to an external magnetic field applied to a first magnetic field sense area, an electrical resistance of the second MR part changing according to an external magnetic field applied to a second magnetic field sense area. A width of the second magnetic field sense area in a track width direction of the recording medium is larger than a width of the first magnetic field sense area in the track width direction, and a phase of change in the electrical resistance of the second MR part with respect to the external magnetic field substantially reverses to or substantially the same as a phase in the electrical resistance of the first MR part.

Abstract: A Lorentz magnetoresistive sensor that employs a gating voltage to control the momentum of charge carriers in a quantum well structure. A gate electrode can be formed at the top of the sensor structure to apply a gate voltage. The application of the gate voltage reduces the momentum of the charge carriers, which makes their movement more easily altered by the presence of a magnetic field, thereby increasing the sensitivity of the sensor.

Abstract: The thin-film patterning method for a magnetoresistive device comprises forming a functional layer on a substrate; forming a first mask layer above the functional layer; forming a patterned resist on the first mask layer; etching the first mask layer by using the resist; removing the resist; forming a second mask layer by atomic layer deposition, the second mask layer covering a step defined by an edge of the first mask layer; dry-etching the second mask layer in a thickness direction of the substrate so as to leave the second mask layer on a side face of the step; removing the first mask layer so as to expose the functional layer under the first mask; and dry-etching the functional layer by using the second mask layer.

Abstract: A magnetic head includes a plurality of generally laterally positioned readers, each reader having a sensor, a lower shield below the sensor, an upper shield above the sensor, and a gap defined between the shields. At least one of the readers has a thicker gap than another of the readers. Methods for making such heads are also presented.

Abstract: A sensor system includes a first magnetoresisitive sensor resistor including a pinned magnetic layer having a fixed orientation in a reference magnetization direction. The first sensor resistor is configured such that its resistance changes in response to an angle defined between the reference magnetization direction and a magnetic field. A plurality of second magnetoresisitive sensor resistors are configured to provide a differential signal. Each of the second sensor resistors includes a pinned magnetic layer having a fixed orientation in the reference magnetization direction. Another sensor system includes a first magnetoresisitive sensor resistor having a length axis oriented by 90°+an angle ?, where ?<90° relative to a reference magnetization axis. A second magnetoresisitive sensor resistor has a length axis oriented by 90°?? relative to the reference magnetization axis.

Abstract: A reticle having a convex portion and a concave portion is used to form a convex portion and concave portion in the resist pattern for magnetic detection element and conductive layer, respectively. Then, with each resist pattern as a mask, unnecessary portions are removed to determine an initial height and to form a convex portion and concave portion in the magnetic detection element layer and in the conductive layer, respectively. Then, based on a ratio between widths of the convex portion and of the concave portion of the magnetic detection element layer, a deviation of the magnetic detection element layer is obtained, and a deviation of the conductive layer is obtained in a similar way, and based on these deviations the medium facing surface is ground with the conductive layer as a resistance sensor so that the height of the magnetic detection element layer be a desired value.

Abstract: A multi-channel tape recording head or apparatus that has cable connection pads aligned along a direction that runs substantially perpendicular to a multi-channel tape recording head actuation direction, which allows a ribbon-type external cable, connected to the cable connection pads, to bend in its most flexible direction when the multi-channel tape recording head moves.

Abstract: A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.

Abstract: A laminated write pole layer for a PMR write head is disclosed in which a plurality of “n” magnetic layers and “n?1” non-magnetic spacers are formed in an alternating fashion on a substrate. The non-magnetic spacers promote exchange decoupling or antiferromagnetic coupling between adjacent magnetic layers. Writability is improved when the trailing magnetic layer has a thickness greater than the thickness of other magnetic layers and preferably >25% of the total thickness of the magnetic layers. The thicknesses of the other magnetic layers may be equal or may become progressively smaller with increasing distance from the trailing magnetic layer. In another embodiment, the non-magnetic spacer between the trailing magnetic layer and the nearest magnetic layer is replaced by a magnetic spacer made of a soft magnetic material to promote magnetic coupling and effectively increase the thickness of the trailing magnetic layer.

Abstract: According to an aspect of an embodiment, a magnetic recording medium includes a substrate, and a first granular layer formed over the substrate, the first granular layer having a plurality of first magnetic particles and Si oxide separating the plurality of first magnetic particles. The magnetic recording medium further includes a second granular layer formed over the first granular layer, the second granular layer having a plurality of second magnetic particles and Ti oxide separating the plurality of second magnetic particles.

Abstract: Resistivity sense bias circuits are described herein. An example resistivity sense bias circuit for use with a magnetoresistive read head includes a current biasing portion configured to provide a bias current across the magnetoresistive read head thereby establishing a bias voltage across the magnetoresistive read head, a resistivity sensing portion coupled to the current biasing portion and configured to sense a change in the bias current based on a resistivity change of the magnetoresistive read head, and a voltage source to provide the bias voltage and to adjust the bias voltage in response to the resistivity change of the magnetoresistive read head.

Abstract: Embodiments of the present invention help to suppress etching damage to a non-magnetic intermediate layer in manufacturing steps of a reproducing head. In one embodiment, a reproducing head has two junction insulating films between side ends of magnetoresistive sensor and hard bias films at both left and right of a track width direction of the magnetoresistive sensor. The reproducing head has first junction insulating films in addition to second junction insulating films.

Abstract: A magnetic sensor for reading information from a magnetic medium. The magnetic sensor includes a bottom electrode and a first sensor disposed above the bottom electrode. The magnetic sensor also includes a middle electrode disposed above the first sensor, a second sensor disposed above the middle electrode and a top electrode disposed above the second sensor. The bottom electrode, the middle electrode and the top electrode are utilized to electrically connect the first sensor and the second sensor in parallel.

Abstract: The thin film magnetic head includes a main magnetic pole layer conducting a magnetic flux to the recording medium so that the recording medium an be magnetized in a direction orthogonal to a surface thereof; a return yoke layer disposed on a trailing side of the main magnetic pole layer; an intermediate protective layer partially disposed on a magnetic shield layer; and a thermal expansion suppressing layer having an edge located on the intermediate protective layer and being in contact with the return yoke layer in an area where the intermediate protective layer is not formed. If the thin film magnetic head is affected by ambient temperature environment, the thermal expansion suppressing layer suppresses the shift of the main magnetic pole layer and the return yoke layer toward the air bearing surface. This suppresses thermal protrusion from occurring on the thin film magnetic head due to ambient temperature environment.

Abstract: A tunneling magnetoresistive device and a magnetic head including the tunneling magnetoresistive device are provided. The tunneling magnetoresistive device includes a pinned layer and a free layer formed on either side of a tunneling barrier layer, wherein the tunneling barrier layer includes Te—O.

Abstract: A reproducing head including a read element, first and second electrodes provided at the opposite ends of the read element, a ground electrode provided between the first and second electrodes, a first constant current circuit for passing a first constant current between the first electrode and the ground electrode, and a second constant current circuit for passing a second constant current between the second electrode and the ground electrode. The reproducing head further includes a computing unit connected to the first and second electrodes for synthesizing an output from the first electrode and an output from the second electrode, and a storing unit having a table showing the relation between a synthetic value computed by the computing unit and the outputs from the first and second electrodes.

Abstract: A read head for reading magnetically stored data in adjacent tracks of a medium has at least two elongate bodies, each having at least one magnetoresistive part. The magnetoresistive parts have sensor portions defined along a length of the elongate bodies, by electrical connections to the magnetoresistive parts. A shield is provided at least on opposite transfer sides of the elongate bodies. The read head is used for calculating a position error signal by calculating a correlation between signals received from the respective sensor portions when the head is positioned over adjacent tracks on the medium, with one of the sensors positioned near a boundary between the tracks. The position error is calculated by determining the correlation between signals from the respective sensor portions.

Abstract: The invention provides a system comprising a non-linear array of magnetoresistive (MR) heads arranged in a two-dimensional matrix for reading information stored on magnetic media. The non-linear array of MR heads may comprise a planar array formed by a plurality of linear arrays of MR heads stacked to define a plurality of layers. Each of the linear arrays may share at least one shield element with another linear array of the non-linear array. In general, each layer is offset by one written track pitch and the number of layers of the invention is equal to the number of written track pitches in a channel pitch. The invention can also be used in a system for reading and writing information to magnetic media at improved track pitches relative to conventional read/write systems.

Abstract: In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.

Abstract: A dual-stripe element magnetroresistive read head for reading information from a magnetic tape. The read head includes a first insulating layer, a first active magnetoresistive layer formed on the first insulating layer, a second insulating layer formed on the first active magnetoresistive layer, a second active magnetoresistive layer formed on the second insulating layer, and a third insulating layer formed on the second active magnetoresistive layer. The second active magnetoresistive layer is magnetostatically coupled to the first active magnetoresistive layer. A periodic structure is formed on a surface of the first insulator layer. As the remaining layers are formed on the first insulating layer, the periodic structure is replicated throughout the read head. Thus, the periodic structure formed on the first insulator layer stabilizes both the first and second active layers via magnetic domain pinning for both layers along the edges of the periodic structure.

Abstract: The present invention provides a magnetoresistive element in which a first magnetic layer and a second magnetic layer whose coercive forces are different, and a non-magnetic layer that is disposed between the magnetic layers, wherein edges of the magnetoresistive element are tapered, or a magnetoresistive element in which a first magnetic layer and a second magnetic layer, and a non-magnetic layer that is disposed between the magnetic layers, wherein the coercive force of the first magnetic layer is larger than the coercive force of the second magnetic layer, and wherein relation between a base area S1 of the first magnetic layer and a base area S2 of the second magnetic layer is S1>S2.

Abstract: A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.

Abstract: A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a preferential setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The preferential setting sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.

Abstract: A method for stabilizing magnetic domains in dual stripe magnetic read heads is provided. This method first comprises providing a plurality of coupled magneto-resistive read elements in a spaced relationship. These read elements include top and bottom patterned magnetic shields on ceramic substrates, with two magneto-resistive (MR) sensor elements between the shields, all separated by insulating layers. Magnetic support structures are provided adjacent and separated from the coupled read elements, wherein the magnetic support structures provide a uniform magnetic field that stabilizes the magnetic domains of the MR sensors in the coupled read elements.

Abstract: Within a method for forming a magnetoresistive (MR) sensor element there is first provided a substrate. There is then formed over the substrate a first magnetoresistive (MR) layer having formed contacting the first magnetoresistive (MR) layer a magnetically biased first magnetic bias layer biased in a first magnetic bias direction with a first magnetic bias field strength. There is also formed separated from the first magnetoresistive (MR) layer by a spacer layer a second magnetoresistive (MR) layer having formed contacting the second magnetoresistive (MR) layer a magnetically un-biased second magnetic bias layer.

Abstract: A method of forming a DSMR head comprises the steps of forming a first ferromagnetic (FM) strip on a substrate with a first anti-FM (AFM) pinning layer over a portion of the first ferromagnetic strip, the first AFM pinning layer being composed of a first material. Then perform a first high temperature annealing step. Form a non-magnetic layer over the strip and the pinning layer. Then form a second FM strip on the non-magnetic layer, and form a second AFM pinning layer over a portion of the second FM strip, with a second AFM pinning layer being composed identically of the first material. Perform a second high temperature annealing step on the first and second FM strips and the first and second pinning layers and the intermediate non-magnetic layer in the presence of a second magnetic field antiparallel to the first magnetic field. A head with NiFe FM strips and FeMn or MnPt, etc, AFM layers for both strips is provided.

Abstract: Disclosed is a method for fabricating a plate-type magnetic resistance sensor chip simply and easily. First, a characteristic membrane composed of NiCo and NiFe is deposited over a surface of a glass wafer, exposed to light, and etched in a predetermined pattern to establish sensing parts. Then, a protective film is formed atop each of the sensing parts by depositing a SiO2 membrane over the glass wafer, exposing the SiO2 membrane to light, and etching the SiO2 membrane in the same pattern as in the sensing part. The resulting structure is subjected to sand blasting to form through-holes at every corner of the sensing parts. A NiFe film is deposited around the through-holes on both sides of the glass wafer and within the through-holes to form conductors.