Abstract: In certain embodiments, an apparatus includes a top shield, bottom shield, polarizer, nonmagnetic conductor layer, and a sensor stack having a first sensor layer. The sensor stack is positioned at a distance recessed from a first plane. The nonmagnetic conductor layer is positioned between the polarizer and the first sensor layer. A magnetization of the first sensor layer is arranged and configured to move in the same direction as a magnetization of the polarizer.

Abstract: An apparatus disclosed herein includes a sensor stack including a first layer and a barrier layer, wherein the barrier layer is in contact with a bottom shield.

Abstract: An apparatus disclosed herein includes a sensor stack including a first layer and an AFM stabilized bottom shield in proximity to the first layer, wherein the AFM stabilized bottom shield is magnetically coupled to the first layer.

Abstract: Various embodiments may be generally directed to a data storage device with at least a magnetic element having a magnetic stack positioned adjacent to and separated from at least one side shield on an air bearing surface (ABS). The side shield can be configured with a predetermined anisotropy variation along a down-track direction.

Abstract: A dual current-perpendicular-to-the-plane magnetoresistive (CPP-MR) sensor has an antiparallel-free (APF) structure as the free layer and uses the top and bottom shields as reference layers. The free layer is an APF structure that has the two free layers (FL1 and FL2) biased into a “spin-flop” state. In this state, the magnetic bias field from side biasing layers is great enough to stabilize the magnetizations of FL1 and FL2 to have a relative orientation preferably about 90 degrees and symmetrically positioned on either side of the magnetic bias field. The side biasing layers may be formed of soft magnetic material to also function as side shields and the top shield may be ferromagnetically coupled to the side shields, with the magnetization of the top shield being opposite that of the magnetization of the bottom shield.

Abstract: A data sensor may be configured in accordance with some embodiments to have a magnetically responsive stack that contacts at least one shield. The at least one shield may be constructed with a non-rectangular shaped electrical contact, such as a triangular and trapezoidal shape, respectively positioned on top and bottom shields on opposite sides of the magnetically responsive stack.

Abstract: A magnetic shield that is capable of enhancing magnetic reading. In accordance with various embodiments, a magnetic element has a magnetically responsive stack shielded from magnetic flux and biased to a predetermined default magnetization by at least one lateral side shield that has a transition metal layer disposed between first and second ferromagnetic layers.

Abstract: A magnetoresistive data writer and reader may be generally configured at least with a magnetoresistive (MR) element contacting a magnetic shield that is constructed of (Ni78Fe22)99.8O0.2 material. The magnetic shield may be formed with an electrodeposition process that uses ?-diketones derivatives to form nano-crystalline grain structure after a subsequent annealing at temperatures above 400° C.

Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

Abstract: According to one embodiment, a magnetoresistance effect element includes first and second shields, a stacked body and a hard bias unit. The stacked body includes first and second magnetic layers, an intermediate layer and a first Ru layer. A magnetization of the first magnetic layer is changeable. A magnetization of the second magnetic layer is changeable. The intermediate layer is nonmagnetic. The first Ru layer is provided between the first shield and the first magnetic layer. A thickness of the first Ru layer is not less than 1.5 nanometers and not more than 2.5 nanometers. The hard bias unit is provided between the first shield and the second shield. A first direction from the first shield toward the second shield intersects a second direction from the stacked body toward the hard bias unit.

Abstract: A method and system provide a magnetic transducer having an air-bearing surface (ABS) and including first and second read sensors and a shield. The shield is in a down track direction from the first read sensor and between the first and second read sensors. The shield includes a first shield layer, a second shield layer and an insulating layer between the first and second shield layers. The first shield layer is between the first read sensor and the second shield layer. The second shield layer is between the first shield layer and the second read sensor. The first shield layer has a first footprint. The second shield layer has a second footprint. The second shield layer overlaps the first shield layer in the down track direction. The overlap is not more than fifty percent of the first footprint and not more than fifty percent of the second footprint.

Abstract: The embodiments of the present invention generally relate to a magnetic head having a silicon seed layer disposed between a lower shield and a metallic underlayer to enhance the unidirectional anisotropy in an antiferromagnetic layer disposed over the metallic underlayer.

Abstract: An apparatus that includes a first read shield and a second read shield and a reader stack between the first and second read shields. The first and second read shields each include a thin high permeability layer closest to the reader stack and a low permeability layer and/or a geometric feature to control magnetic field flux lines in a free layer of the reader stack.

Abstract: A magnetic sensor includes first and second MR elements, and an electrode electrically connecting the first and second MR elements to each other. The electrode includes a first portion having a first surface, a second portion having a second surface, and a coupling portion coupling the first and second portions to each other. The first surface is in contact with an end face of the first MR element. The second surface is in contact with an end face of the second MR element. Each of the first and second surfaces has a three-hold or higher rotationally symmetric shape. The diameter of a first inscribed circle inscribed in the outer edge of the first surface and the diameter of the second inscribed circle inscribed in the outer edge of the second surface are greater than the width of the coupling portion.

Abstract: Various apparatus and associated method embodiments are generally directed to a magnetic stack positioned on an air bearing surface (ABS) and biased to a predetermined magnetization by a bias magnet. The bias magnet can be separated from the magnetic stack and at least one magnetic shield by a self-aligned magnetic insulating feature that is comprised of first and second insulating layers.

Abstract: A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.

Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for one or more regions of reduced anisotropy proximal to a sensor stack within a shielding structure.

Abstract: A method and system provide a magnetic transducer including first and second read sensors, a shield and a conductive via. The shield is between the first and second read sensors. In one aspect, the magnetic transducer also includes first and second read shields. In this aspect, the first read shield has a read shield aperture. The conductive via extends through the read shield aperture, provides electrical contact to the shield and is insulated from the first read shield. In another aspect, the shield has first and second shield layers separated by an insulating layer. In this aspect, the second shield layer has an aperture therein. The conductive via extends through this aperture, provides electrical contact to the first shield layer and is insulated from the second shield layer.

Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

Abstract: An apparatus comprising a base shield and a sensor stack, wherein the base shield is separated from the sensor stack via a first soft magnetic layer that is magnetically decoupled form the base shield.

Abstract: A magnetic element may generally be configured as a read head with at least a magnetic stack that contacts at least one magnetic shield. The magnetic shield can be positioned on top of a base lamination and have at least a predetermined anisotropy and magnetic coercivity corresponding to the base lamination.

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AxB1-x(65 at %?x?85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.

Abstract: A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %?x?60 at %, 0.3?y?0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.

Abstract: A magnetic element is generally provided that can be implemented as a data reader. Various embodiments may connect a magnetic stack to a top shield and separate the magnetic stack from a bi-layer side shield. The bi-layer side shield may have a fixed magnetization layer and a soft magnetic layer each magnetically isolated from the top shield.

Abstract: According to one embodiment, a magneto-resistance effect element includes: a first shield; a second shield; a first side shield layer; a second side shield layer; a stacked body; a first shield guide layer; and a second shield guide layer. The first shield guide layer includes a fifth magnetic layer provided between the first side shield layer and the stacked body. The second shield guide layer includes a sixth magnetic layer provided between the second side shield layer and the stacked body. A distance between the first side shield layer and the first shield guide layer is shorter than a distance between the stacked body and the first shield guide layer. A distance between the second side shield layer and the second shield guide layer is shorter than a distance between the stacked body and the second shield guide layer.

Abstract: A magnetic sensor comprises a first ferromagnetic body, a second ferromagnetic body, a channel extending from the first ferromagnetic body to the second ferromagnetic body, a magnetic shield covering the channel, and an insulating film disposed between the channel and the magnetic shield, while the magnetic shield has a through-hole extending toward the channel.

Abstract: A magnetic head according to one embodiment includes a read sensor adapted for sensing an external magnetic field; an upper magnetic shield positioned above the read sensor along an air bearing surface (ABS) of the read sensor; a lower magnetic shield positioned below the read sensor along the ABS of the read sensor; a rear insulating layer positioned on a rear side of the read sensor, the rear side being on an opposite side of the read sensor as the ABS of the read sensor; and a soft magnetic layer positioned near the rear side of the read sensor opposite the ABS of the read sensor, wherein the rear insulating layer is positioned between the soft magnetic layer and the read sensor, and wherein the rear insulating layer is positioned between the soft magnetic layer and the lower magnetic shield.

Abstract: A two-dimensional magnetic recording (TDMR) read head structure has the lower read sensor free layer magnetization biased by side shields of soft magnetic material. A center shield between the lower and upper sensors is an antiparallel coupled magnetic structure, i.e., first and second ferromagnetic layers separated by an antiparallel coupling (APC) layer. The first ferromagnetic layer is ferromagnetically exchange coupled to the side shields of the lower sensor to stabilize the magnetization of the lower sensor's free layer. The first ferromagnetic layer of the center shield is a multilayer of a lower NiFe layer and an upper CoFeB alloy layer inserted below the APC layer. The CoFeB alloy insertion layer increases the antiparallel coupling of the first and second ferromagnetic layers of the center shield after two orthogonal anneals so that the magnetization of the first ferromagnetic layer is aligned parallel to the air-bearing surface (ABS) of the TDMR structure.

Abstract: A magnetic element may generally be configured as a read head with at least a magnetic stack that contacts at least one magnetic shield. The magnetic shield can be positioned on top of a base lamination and have at least a predetermined anisotropy and magnetic coercivity corresponding to the base lamination.

Abstract: Various embodiments may configure a data storage device with at least a magnetic element having a magnetic stack that is configured with an air bearing surface (ABS) and is separated from a side shield. The side shield can be biased by a biasing layer that contacts the side shield and is separated from the ABS.

Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

Abstract: An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

Abstract: According to one embodiment, a magnetic head includes a magnetoresistive element between a first magnetic shield layer and a second magnetic shield layer, and a hard bias layer between the first magnetic shield layer and the second magnetic shield layer on a side surface of the magnetoresistive element in a first direction intersecting with a second direction which links the first and second magnetic shield layers. The hard bias layer includes Fe or an alloy containing Fe and Co. An aspect ratio (h/w) of the hard bias layer is not smaller than 2, where h is a height of the hard bias layer in the first direction and w is a thickness of the hard bias layer in the second direction.

Abstract: A data sensor may be configured in accordance with some embodiments to have a magnetically responsive stack that contacts at least one shield. The at least one shield may be constructed with a non-rectangular shaped electrical contact, such as a triangular and trapezoidal shape, respectively positioned on top and bottom shields on opposite sides of the magnetically responsive stack.

Abstract: A magnetoresistive data writer and reader may be generally configured at least with a magnetoresistive (MR) element contacting a magnetic shield that is contrasted of (Ni78Fe22)99.8O0.2 material. The magnetic shield may be formed with an electrodeposition process that uses ?-diketones derivatives to form nano-crystalline grain structure after a subsequent annealing at temperatures above 400° C.

Abstract: A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction.

Abstract: An apparatus comprising a base shield and a sensor stack, wherein the base shield is separated from the sensor stack via a first soft magnetic layer that is magnetically decoupled form the base shield.

Abstract: Embodiments in accordance with the present invention provide a magnetic head of the CPP structure for perpendicular magnetic recording, that is excellent in read performance, and stable in write/read performances by enhancing the external field durability, and further, suppresses deterioration in read sensor property, due to thermal factors. At least either shield layer of a lower magnetic shield layer, and an upper magnetic shield layer, closer to a perpendicular magnetic write head, is made up so as to have a multi-layered structure comprising low thermal expansion nonmagnetic layers, and magnetic layers. Material having a coefficient of thermal expansion smaller than that of a magnetoresistive film is selected as a material for the low thermal expansion nonmagnetic layers of the shield layer.

Abstract: A magnetic element may generally be directed to data bit sensing in various data storage environments. An example magnetic element may be configured with at least a magnetic stack contacting a magnetic shield having a current constriction feature configured to transition current from a horizontal orientation to a vertical orientation proximal an air bearing surface (ABS).

Abstract: A read head structure is disclosed with a dual piece heat sink layer having a front piece formed over a front portion of a dynamic flying height (DFH) element and a back piece above a back portion of the DFH element. A first (S1) shield is formed on the front piece and between the front piece and air bearing surface (ABS). Front and back pieces are separated by an insulator gap. The front piece is used to help control read gap protrusion. As a result, a bottom portion of the S1 shield protrudes to a greater extent than a top portion adjacent to the sensor thereby protecting the sensor from unwanted contact with the magnetic media. The dual piece heat sink layer also enables an improved Figure of Merit in terms of temperature rise in the reader per unit of actuation (nm) delivered by the DFH element.

Abstract: According to one embodiment, a magnetoresistance effect element includes first and second shields, a stacked body and a hard bias unit. The stacked body includes first and second magnetic layers, an intermediate layer and a first Ru layer. A magnetization of the first magnetic layer is changeable. A magnetization of the second magnetic layer is changeable. The intermediate layer is nonmagnetic. The first Ru layer is provided between the first shield and the first magnetic layer. A thickness of the first Ru layer is not less than 1.5 nanometers and not more than 2.5 nanometers. The hard bias unit is provided between the first shield and the second shield. A first direction from the first shield toward the second shield intersects a second direction from the stacked body toward the hard bias unit.

Abstract: A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.

Abstract: Structures and methods for fabrication servo and data heads of tape modules are provided. The servo head may have two shield layers spaced apart by a plurality of gap layers and a sensor. Similarly, the data head may have two shield layers spaced apart by a plurality of gap layers and a sensor. The distance between the shield layers of the servo head may be greater than the distance between the shield layers of the data head. The material of the gap layers may include tantalum or an alloy of nickel and chromium. The material for the gap layers permits deposition of gap layers with sufficiently small surface roughness to prevent distortion of the tape module and increase the stability of the tape module operation.

Abstract: A magnetic recording sensor with AFM exchange coupled shield stabilization for use in a data storage device includes a read sensor positioned between a bottom shield and a top shield. The top shield comprises a first ferromagnetic (FM) layer, a coupling layer, and a second FM layer. An exchange coupling insertion layer is provided between the second FM layer and an antiferromagnetic (AFM) layer above. In an embodiment of the invention, the exchange coupling insertion layer comprises CoFe with a Fe content from about 35-45 at. %, and thickness from about 1 nm to about 3 nm. In another embodiment of the invention, the exchange coupling insertion layer comprises a bi-layer, including first sub-layer comprising CoFe with Fe content from about 8-12 at. %, and second sub-layer comprising CoFe with Fe content from about 35-45 at. %, and the bi-layer has a thickness less than about 4 nm.

Abstract: A magnetic head according to an embodiment includes a first magnetic shield and a second magnetic shield that are opposed to each other, and a magnetoresistive film arranged between the first magnetic shield and the second magnetic shield, and including a first magnetic layer including a first metal layer that contains 90 at. % or more of Fe and a first Heusler alloy layer, a second magnetic layer arranged on a side of the first Heusler alloy layer opposite from the first magnetic layer, and an intermediate layer arranged between the first Heusler alloy layer and the second magnetic layer.

Abstract: To realize a highly reliable magnetic head for a high-frequency magnetic field assisted recording system by preventing current crowding in an oscillator and increasing the current resistance of the oscillator. Between a main pole that generates a recording magnetic field and a trailing shield, an oscillator that includes a non-magnetic metal layer, a spin injection pinned layer, an intermediate layer, and a high-frequency magnetic field generation layer and that generates a high-frequency magnetic field is disposed. The non-magnetic metal layer adjacent to the main pole is tapered with the width gradually increasing from the trailing side toward the leading side.

Abstract: A magnetic sensor having reduced read gap thickness, reduced signal noise and improved signal to noise ratio. The sensor includes a sensor stack and hard bias structures formed at either side of the sensor stack for biasing the free layer of the sensor. A protective layer is formed over a portion of the hard bias structure, however a portion of the hard bias structure extends upward toward the upper shield and is disposed between the protective layer and the sensor stack as a result of the process used to form the magnetic bias structure. This portion of the hard bias structure that extends toward the upper shield has a reduced magnetization relative to the rest of the hard bias structure so that it will not magnetically couple with the upper shield.

Abstract: Apparatus for two dimensional reading. In accordance with some embodiments, a magnetic read element has a bias magnet disposed between a plurality of read sensors. The bias magnet may be configured to concurrently bias each read sensor to a predetermined magnetization.

Abstract: A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor has both side shields and an antiparallel structure (APS) top shield. The APS top shield is an antiferromagnetically exchange-coupled top shield that includes an antiparallel (AP) coupled structure and an antiferromagnetic (AF) layer which permits the use of the desired NiFex (x is between 15 and 25 atomic percent) material for the side shields. The APS top shield includes lower and upper ferromagnetic layers with respective antiparallel magnetizations. The antiparallel coupling structure between the two ferromagnetic layers consists of the antiparallel coupling (APC) film, which is typically Ru, Ir or Cr, and one and only one interface film of Co or CoFe. The APS top shield with one and only one Co or CoFe interface film enables the material of the side shields to be formed of the preferred NiFex (x is between 15 and 25 atomic percent) material without over-stabilization of the free layer.

Abstract: A method and system provide a magnetic transducer including a first shield, a read sensor, and a second shield. The read sensor is between the first shield and the second shield. The second shield includes a first ferromagnetic layer, a nonmagnetic spacer layer, a second ferromagnetic layer and a pinning layer. The nonmagnetic spacer layer is between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is between the read sensor and the nonmagnetic spacer layer. The pinning layer is adjacent to the second ferromagnetic layer. The first ferromagnetic layer is coupled antiparallel with the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer includes a CoFe portion adjacent to the nonmagnetic spacer layer. The CoFe portion includes at least twenty-five atomic percent and not more than fifty atomic percent Fe.