Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, a MAMR stack disposed between the trailing shield and the main pole, side shields surrounding at least a portion of the main pole, and a structure disposed between the side shields and the main pole at a media facing surface (WS). The structure is fabricated from a material that is thermally conductive and electrically insulating/dissipative. The material has a thermal conductivity of at least 50 W/(m*K) and an electrical resistivity of at least 105 ?*m. The structure helps dissipate joule heating generated from either the main pole or the MAMR stack into surrounding area without electrical shunting, leading to reduced heating or break-down induced failures.

Abstract: A method of producing a multilayer magnetoelectronic device and a related device. The method includes depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment. A magnetization curve is specified for the magnetoelectronic device. The number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined. For each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer. The multilayer structure is deposited using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers.

Abstract: An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

Abstract: An apparatus according to one embodiment includes a transducer structure having: a lower shield having recesses in an upper surface thereof; an upper shield formed above the lower shield; a sensor between the upper and lower shields, the recesses being positioned on opposite sides of the sensor; and a first insulating layer in the recesses in the upper surface of the lower shield. An upper surface of the first insulating layer is coplanar with an uppermost portion of the upper surface of the lower shield. An apparatus according to another embodiment includes a transducer structure having: a lower shield having recesses in an upper surface thereof; an upper shield formed above the lower shield, the upper shield having recesses in a lower surface thereof; a sensor between the shields, the recesses being positioned on opposite sides of the sensor; and insulating layers in the recesses in the shields.

Abstract: Embodiments of the present disclosure describe a liner for a phase change memory (PCM) array and associated techniques and configurations. In an embodiment, a substrate, an array of phase change memory (PCM) elements disposed on the substrate, wherein individual PCM elements of the array of PCM elements comprise a chalcogenide material and a liner disposed on sidewall surfaces of the individual PCM elements, wherein the liner comprises aluminum (Al), silicon (Si) and oxygen (O). Other embodiments may be described and/or claimed.

Abstract: According to one embodiment, a CPP structure magnetoresistive head includes a magnetoresistive sensor film between a lower shield layer and an upper shield layer and a longitudinal biasing layer disposed at each side of the magnetoresistive sensor film via a read track width defining insulator film. In the stripe height direction, the length of the longitudinal biasing layer is longer than the length of a second ferromagnetic layer in which its magnetization rotates in response to the external magnetic field. The second ferromagnetic layer is one of the layers comprising the magnetoresistive sensor film. At a stripe height, the surface of each longitudinal biasing layer has a step to change the thickness thereof across the step so that the air bearing surface section thereof has a larger thickness than any other section. Other structures using a magnetoresistive head and methods of production thereof are described as well.

Abstract: According to one embodiment, a semiconductor device includes a MRAM chip including a semiconductor substrate and a memory cell array area includes magnetoresistive elements which are provided on the semiconductor substrate, and a magnetic shield layer separated from the MRAM chip, surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.

Abstract: Various methods for attaching a crystalline write pole onto an amorphous substrate and the resulting structures are described in detail herein. Further, the resulting structure may have a magnetic moment exceeding 2.4 Tesla. Still further, methods for depositing an epitaxial crystalline write pole on a crystalline seed or template material to ensure that the phase of the write pole is consistent with the high moment phase of the template material are also described in detail herein.

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.

Abstract: Various embodiments may configure a data storage device with at least a magnetic element having a magnetic stack that is configured with an air bearing surface (ABS) and is separated from a side shield. The side shield can be biased by a biasing layer that contacts the side shield and is separated from the ABS.

Abstract: A data reader and associated method of making are generally provided. A data reader capable of sensing adjacent data bits may be configured at least with a magnetic stack disposed between first and second side shields. Each side shield may have a polish stop layer that is tuned to provide a first predetermined polish rate.

Abstract: The implementations disclosed herein provide for a spin transport sensor including a synthetic antiferromagnet (SAF) adjacent a shield element. The SAF extends to an air-bearing surface (ABS) and provides a current path from a current source to an ABS-region of a spin conductor layer. Spin current diffuses from the spin conductor layer to an adjacent free layer, which generates a measurable electrical voltage in a free layer of the spin transport sensor. The SAF serves as both a magnetic shield and a spin injector to the spin conductor layer.

Abstract: Various apparatus and associated method embodiments are generally directed to a magnetic stack positioned on an air bearing surface (ABS) and biased to a predetermined magnetization by a bias magnet. The bias magnet can be separated from the magnetic stack and at least one magnetic shield by a self-aligned magnetic insulating feature that is comprised of first and second insulating layers.

Abstract: A magnetic head according to one embodiment includes a read sensor adapted for sensing an external magnetic field; an upper magnetic shield positioned above the read sensor along an air bearing surface (ABS) of the read sensor; a lower magnetic shield positioned below the read sensor along the ABS of the read sensor; a rear insulating layer positioned on a rear side of the read sensor, the rear side being on an opposite side of the read sensor as the ABS of the read sensor; and a soft magnetic layer positioned near the rear side of the read sensor opposite the ABS of the read sensor, wherein the rear insulating layer is positioned between the soft magnetic layer and the read sensor, and wherein the rear insulating layer is positioned between the soft magnetic layer and the lower magnetic shield.

Abstract: A method to measure a magnetic field is provided. The method includes applying an alternating drive current to a drive strap overlaying a magnetoresistive sensor to shift an operating point of the magnetoresistive sensor to a low noise region. An alternating magnetic drive field is generated in the magnetoresistive sensor by the alternating drive current. When the magnetic field to be measured is superimposed on the alternating magnetic drive field in the magnetoresistive sensor, the method further comprises extracting a second harmonic component of an output of the magnetoresistive sensor. The magnetic field to be measured is proportional to a signed amplitude of the extracted second harmonic component.

Abstract: A read head structure is disclosed with a dual piece heat sink layer having a front piece formed over a front portion of a dynamic flying height (DFH) element and a back piece above a back portion of the DFH element. A first (S1) shield is formed on the front piece and between the front piece and air bearing surface (ABS). Front and back pieces are separated by an insulator gap. The front piece is used to help control read gap protrusion. As a result, a bottom portion of the S1 shield protrudes to a greater extent than a top portion adjacent to the sensor thereby protecting the sensor from unwanted contact with the magnetic media. The dual piece heat sink layer also enables an improved Figure of Merit in terms of temperature rise in the reader per unit of actuation (nm) delivered by the DFH element.

Abstract: An apparatus that includes a write pole, the write pole including a magnetic material; a near field transducer-heat sink (NFT-HS), the NFT-HS including a noble metal; and a power source configured to electrically bias the write pole with respect to a second structure.

Abstract: A head-slider. The head-slider includes a slider, and a thin-film magnetic-recording head. The thin-film magnetic-recording head includes: a read element; a write element; a non-magnetic insulating protective layer disposed around both read and write elements; a resist disposed at a position further away from an air-bearing surface than the read element; and, a hard-material member including a material selected from the group consisting of silicon carbide and tungsten, which is disposed at a position further away from the air-bearing surface than the read element and the write element. Both an end of the resist and an end of the hard-material member overlap the write element when viewed in a stacking direction. A ratio of a distance from the air-bearing surface to a deepest end of the hard-material member to a distance from the air-bearing surface to a deepest end of the resist is at least 0.9.

Abstract: Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.

Abstract: According to one embodiment, a method for forming a magnetic head having a current perpendicular to plan (CPP) sensor, includes forming a magnetoresistance effect film, performing a subtractive process for defining a back edge and a height length of the magnetoresistance effect film, depositing an insulating film adjacent the back edge of the magnetoresistance effect film, and ion milling at least an upper surface of a first portion of the insulating film located closest to the magnetoresistance effect film, where the upper surface of the first portion of the insulating film lies substantially along a plane. After the ion milling, the insulating film has no overlap of the insulating film above and/or onto the magnetoresistance effect film and no bulging in a region immediately adjacent a boundary between the insulating film and the magnetoresistance effect film.

Abstract: Various embodiments can have a data read stack positioned on an air bearing surface (ABS). The data read stack may be disposed between first and second buffer layers, where at least one of the buffer layers can be configured to provide a predetermined shunt ratio for the data read stack.

Abstract: A magnetoresistive read sensor with improved sensitivity and stability is described. The sensor is a trilayer stack positioned between two electrodes. The trilayer stack has two free layers separated by a nonmagnetic layer and a biasing magnet positioned at the rear of the stack and separated from the air bearing surface. Current in the sensor is confined to regions close to the air bearing surface by an insulator layer to enhance reader sensitivity.

Abstract: According to one embodiment, a magnetoresistive effect head includes a lower magnetic shield provided on a substrate, a magnetoresistive effect film laminated from a pinned layer with a pinned direction of magnetization, an intermediate layer, a free layer having a varying direction of magnetization controlled by an applied external magnetic field, a magnetic domain control layer formed with an intervening insulation layer on both sides in a track width direction of the magnetoresistive effect film, an upper magnetic shield, and electrodes for directing sense current flow in a direction perpendicular to a film surface of the magnetoresistive effect film, wherein a magnetic field applied by the magnetic domain control layer to a region away from an ABS of the free layer is at least 1.4 times larger than a magnetic field applied by the magnetic domain control layer to a region near the ABS of the free layer.

Abstract: Methods for manufacturing a magnetic head for a disk drive. The methods include the steps of depositing a first non-magnetic spacer layer, depositing a plating seed layer on the first non-magnetic spacer layer and plating at least one side shield and a pole tip layer on the plating seed layer, each of the at least one side shield and the pole tip layer separated by a trench. Then the method includes depositing a first non-magnetic material in the trench using ion-beam assisted deposition and planarizing using a chemical-mechanical polishing step.

Abstract: A method and system provide a magnetoresistive structure from a magnetoresistive stack that includes a plurality of layers. The method and system include providing a mask that exposes a portion of the magnetoresistive stack. The mask has at least one side, a top, and a base at least as wide as the top. The method and system also include removing the portion of the magnetoresistive stack to define the magnetoresistive structure. The method and system further include providing an insulating layer. A portion of the insulating layer resides on the at least one side of the mask. The method and system further include removing the portion of the insulating layer on the at least one side of the mask and removing the mask.

Abstract: In a read-write head, the shields can serve as magnetic flux conductors for external fields, so that they direct a certain amount of flux into the recording medium. This problem has been overcome by the addition to the shields of a pair of tabs located at the edges closest to the ABS. These tabs serve to prevent flux concentrating at the edges so that horizontal fields at these edges are significantly reduced. Said tabs need to have aspect ratios of at least 2 and may be either triangular or rectangular in shape. Alternatively, the tabs may be omitted and, instead, outer portions of the shield's lower edge may be shaped so as to slope upwards away from the ABS.

Abstract: Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density.

Abstract: A method for providing energy assisted magnetic recording (EAMR) heads is described. The method comprises bonding a plurality of lasers to a first substrate. The plurality of lasers corresponds to the plurality of EAMR heads and is for providing energy to a plurality of EAMR transducers. The method further comprises fabricating the plurality of EAMR transducers for the plurality of EAMR heads on a second substrate, bonding the first substrate to the second substrate such that the plurality of EAMR transducers and the plurality of lasers reside between the first substrate and the second substrate, removing at least one of the first substrate and the second substrate, and separating a remaining substrate into the plurality of EAMR heads.

Abstract: A method and system for providing a magnetic transducer is described. The method and system include providing a magnetoresistive structure having a plurality of sides. At least one oxidation buffer layer covers at least the plurality of sides. The method and system also include providing at least one oxide layer after the oxidation buffer layer is provided. The oxide layer(s) reside between the sides and the oxidation buffer layer(s).

Abstract: A magnetoresistive read sensor is described. The sensor is a magnetically responsive stack positioned between top and bottom electrodes on an air bearing surface. Current in the sensor is confined to regions close to the air bearing surface by a first multilayer insulator structure between the stack and at least one electrode to enhance reader sensitivity.

Abstract: A magnetic head disposed in a slider arranged with an interval with respect to a magnetic disk includes a sensor that is positioned in a stepped-back position from an air bearing surface facing the magnetic disk, an insulating film that is positioned on the air bearing surface and that covers the sensor; a pair of lead films, the lead films being electrically connected to the sensor such that at least portions of the lead films are exposed on the air bearing surface, and being configured to transfer a temperature change of the air bearing surface to the sensor.

Abstract: Embodiments in accordance with the present invention provide a thin film magnetic head for preventing a short-circuit failure during formation of a track portion or a stripe-height portion and improving a yield. In one embodiment, a stripe-height direction is first formed, and then a track-width direction is formed. A third insulating film having a smoothly shaped wall surface is formed on a first insulating film during stripe-height formation. During formation of the third insulating film, an optimized lift-off pattern is used to smooth an edge shape.

Abstract: A magnetic recording and reproducing apparatus includes a metal housing, a magnetic recording medium having a magnetic recording layer, and a thin-film magnetic head having a write magnetic field production unit and a resonance magnetic field production unit. The apparatus further includes a write signal generation unit for generating the write signal, a microwave signal generation unit for generating the microwave excitation signal, a transmission unit for feeding the microwave excitation signal to the resonance magnetic field production unit and for feeding the write signal to the write magnetic field production unit, and a plurality of metal ribs, arranged in the metal housing, for forming a plurality of cavities. Each of the plurality of cavities having a rectangular horizontal section shape and having dimensions to produce no resonance at a frequency of the microwave excitation signal.

Abstract: In a read-write head, the shields can serve as magnetic flux conductors for external fields, so that they direct a certain amount of flux into the recording medium. This problem has been overcome by the addition to the shields of a pair of tabs located at the edges closest to the ABS. These tabs serve to prevent flux concentrating at the edges so that horizontal fields at these edges are significantly reduced. The tabs need to have aspect ratios of at least 2 and may be either triangular or rectangular in shape. Alternatively, the tabs may be omitted and, instead, outer portions of the shield's lower edge may be shaped so as to slope upwards away from the ABS.

Abstract: A magnetoresistive read sensor with improved sensitivity and stability is described. The sensor is a trilayer stack positioned between two electrodes. The trilayer stack has two free layers separated by a nonmagnetic layer and a biasing magnet positioned at the rear of the stack and separated from the air bearing surface by the stripe height distance. Current in the sensor is confined to regions close to the air bearing surface by an insulator layer to enhance reader sensitivity.

Abstract: A magnetic head according to one embodiment includes a substrate; a sensor formed above the substrate; a second shield formed above the sensor and the substrate; a first insulation layer positioned between the substrate and the sensor; a second insulation layer positioned between the sensor and the second shield; and a nonmagnetic, non-electrically insulative layer formed between the substrate and the sensor.

Abstract: The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a multilayer device assembly comprising a fixed magnetization layer, a spacer layer, a free layer and a cap layer stacked one upon another in order, with a sense current applied in a stacking direction of the multilayer device assembly. In the rear of the multilayer device assembly, there is a refilled insulation layer formed, which is in contact with the rear end face of the multilayer device assembly and extends rearward, wherein the uppermost position P of the refilled insulation layer that is in contact with the rear end face of said multilayer device assembly lies at a rear end face of the cap layer and is set in such a way as to satisfy a relation: 0.2?(T2/T1)<1 where T1 is the thickness of the cap layer, and T2 is the absolute value of a distance from the uppermost portion of the cap layer down to the position P as viewed in a thickness direction.

Abstract: A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording disk drive, has low magnetic damping, and thus low mag-noise, as a result of the addition of a ferromagnetic backing layer to the ferromagnetic free layer. The backing layer is a material with a low Gilbert damping constant or parameter ?, the well-known dimensionless coefficient in the Landau-Lifshitz-Gilbert equation. The backing layer may have a thickness such that it contributes up to two-thirds of the total moment/area of the combined free layer and backing layer. The backing layer may be formed of a material having a composition selected from (CoxFe(100-x))(100-y)Xy, (Co2Mn)(100-y)Xy and (Co2FexMn(1-x))(100-y)Xy, where X is selected from Ge, Al and Si, and (Co2Fe)(100-y)Aly, where y is in a range that results in a low damping constant for the material.

Abstract: Provided is a thin-film magnetic head in which a noise due to the voltage potential difference between the read head element and the protective coat surface is suppressed. The thin-film magnetic head comprises: a read head element, one end surface of the read head element reaching an head end surface on the ABS side; a protective coat formed on the head end surface in such a way to cover at least the one end surface of the read head element; and at least one antistatic means for preventing the protective coat from being electrostatically charged, formed on/above the element formation surface, one end surface of the at least one antistatic means reaching the head end surface, the protective coat covering a portion, not the whole, of the one end surface of the at least one antistatic means on the head end surface.

Abstract: A method for constructing a magnetoresistive sensor using an etch mask that is resistant to the material removal process used to define the sensor width and stripe height. The method may include the use of a Ta etch mask formed under a photoresist mask, and the use of an ion milling process to define the sensor. The etch mask remains substantially intact after performing the ion milling and therefore is readily removed by a later CMP process. The etch mask layer is also very resistant to high temperatures such as those used in a desired atomic layer deposition of alumina, which is used to deposit conformal layers of alumina around the sensor.

Abstract: A manufacturing method of a thin-film head includes the steps of, laminating and patterning a soft magnetic layer with iron alloy that contains silicon and aluminum through a base layer on a substrate; laminating an insulating layer on the patterned soft magnetic layer; performing a chemical-mechanical polishing of a surface of the laminated insulating layer and the patterned soft magnetic layer with a first acid slurry; forming a lower shield layer by a mechanical polishing with a second weak acid, or neutral slurry with a pH different from that of the first slurry; and forming a lower shield gap layer and a magnetoresistive effect layer on the lower shield layer.

Abstract: In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure.

Abstract: A current perpendicular to plane (CPP) magnetoresistive sensor having a current path defined by first and second overlying insulation layers between which an electrically conductive lead makes content with a surface of the sensor stack. The current path being narrower than the width of the sensor stack allows the outer edges of the sensor stack to be moved outside of the active area of the sensor. This results in a sensor that is unaffected by damage at outer edges of the sensor layers. The sensor stack includes a free layer that is biased by direct exchange coupling with a layer of antiferromagnetic material (AFM layer). The strength of the exchange field can be controlled by adding Cr to the AFM material to ensure that the exchange field is sufficiently weak to avoid pinning the free layer.

Abstract: In one illustrative example, a three terminal magnetic sensor (TTM) suitable for use in a magnetic head has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer separates the emitter region from the base region, and a second barrier layer separates the collector region from the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. Preferably, the base region consists of a free layer structure so as to have a relatively small thickness. A pinned layer structure is made part of the emitter region. An in-stack longitudinal biasing layer (LBL) structure is formed in stack with the sensor stack structure and has a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure.

Abstract: In one illustrative example, a three terminal magnetic sensor (TTM) has a sensor stack structure which includes a base region, a collector region, and an emitter region. A first barrier layer is located between the emitter region and the base region, and a second barrier layer is located between the collector region and the base region. A plurality of terminals of the TTM include a base lead coupled to the base region, a collector lead coupled to the collector region, and an emitter lead coupled to the emitter region. The collector region is or includes a layer of semiconductor material. The base region includes a free layer structure. The TTM further includes a self-pinned layer structure and an in-stack longitudinal biasing layer (LBL) structure formed in stack with the sensor stack structure, with a magnetic moment that is parallel to a sensing plane of the TTM for magnetically biasing the free layer structure.

Abstract: A thin-film magnetic head according to the present invention comprises: a substrate; at least one magnetic head element formed on the substrate; an overcoat multilayer composed of a plurality of overcoat layers, formed on the substrate so as to cover the at least one magnetic head element; and at least one heating element to be heated at least during operation of the at least one magnetic head element, the at least one heating element provided in the overcoat multilayer, and a coefficient of thermal expansion of an overcoat layer located farthest from the substrate in the overcoat multilayer being smaller than a coefficient of thermal expansion of an overcoat layer located closest to the substrate in the overcoat multilayer.

Abstract: In one embodiment, a method of forming a CPP sensor comprises providing a sensor having a hard mask disposed on a left side thereof and a right side with a portion of the sensor material removed therefrom, the hard mask having a vertical surface; forming a right dielectric layer including a vertical surface disposed adjacent the vertical surface of the hard mask; forming a right hard bias layer or right side shields on the right dielectric layer; removing the hard mask to expose the left side of the sensor; forming an electrically conductive layer on the sensor, the electrically conductive layer including a vertical electrically conductive portion disposed adjacent the vertical surface of the right dielectric layer; removing the electrically conductive layer except the vertical electrically conductive portion; removing a portion of the sensor material from the left side of the sensor; forming a left dielectric layer on the left side of the sensor, the left dielectric layer including a vertical surface dispose

Abstract: A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ? to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.

Abstract: A read head comprises: a bottom shield layer; a top shield layer; an MR element disposed between the bottom shield layer and the top shield layer; a bottom shield gap film disposed between the bottom shield layer and the MR element; and a top shield gap film disposed between the top shield layer and the MR element. The MR element has a first end closer to the air bearing surface and a second end opposite to the first end. An adjacent layer made of a metal material is adjacent to the second end with an insulating film disposed in between. The material making up the adjacent layer has a linear thermal expansion coefficient whose absolute value is 6×10?6/° C. or smaller at a temperature of 30° C., and preferably 1×10?6/° C. or smaller.