Abstract: An electronic device is provided to include a semiconductor memory including a variable resistance element. The variable resistance element may include a variable resistance pattern including a first electrode layer, a variable resistance layer, and a second electrode layer that are sequentially stacked; and a switching assist structure spaced from a side wall of the variable resistance pattern to surround the variable resistance pattern and including multilayered conductive structures that are vertically spaced from one another.

Abstract: A disk drive system having a shielded pole write head and media that includes a disk having a soft underlayer (SUL) that is relatively thin in order to save on cost for producing the SUL. The SUL is thin enough that it will become magnetically saturated in the vicinity of the write pole. The thickness of the SUL that will achieve this saturation may be stated as being less than a geometric factor times the ratio of the write pole saturation magnetization divided by the saturation magnetization of the SUL. The geometric factor is the ratio of the write pole area at the ABS to the write pole perimeter at the ABS.

Abstract: A magnetoresistive read head having a corrugated magnetoresistive layer wherein the corrugated section does not encroach on magnetic elements on either end of the magnetoresistive layer. The corrugations in the magnetoresistive layer stabilize the magnetization in the center region of the read head, while the magnetic elements stabilize the magnetization at the ends. By separating the two stabilization methods, unfavorable interactions between them is reduced.