Abstract: A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.

Abstract: A magnetoresistance device has a channel extending between first and second ends in a first direction comprising non-ferromagnetic semiconducting material, such as silicon, a plurality of leads connected to and spaced apart along the channel, a gate structure for applying an electric field to the channel in a second direction which is substantially perpendicular to the first direction so as to form an inversion layer in the channel and a face which lies substantially in a plane defined by the first and second directions and which is configured such that an edge of the channel runs along the face.

Abstract: A method of temporarily protecting an electrically sensitive component from damage due to electrostatic discharge is disclosed. The method includes the steps of defining a first shield that forms a first lead for both a component and a shunt; depositing a conductive material on the first shield to form the component and the shunt; defining an edge of the component and an edge of the shunt together in a single masking step; refilling with insulation adjacent the component and the shunt to their respective edges on the first shield; defining a second shield on both the component and the shunt that forms a second lead for both the component and the shunt to form a shunted assembly that electrically protects the component; lapping the shunted assembly; and removing a portion of the shunted assembly to remove the shunt and form an electrical open for an unshunted assembly.

Abstract: A high frequency, low loss, power, laminated magnetic material includes alternating magnetic plates of low hysteresis loss material and electrically insulating films. The multi-layer structure allows for independently and simultaneously controlling and reducing hysteresis loss and eddy current loss, and maintaining a high resistivity, while operating at high frequencies and at high flux density levels, resulting in extremely low net loss density for the composite material. Methods of making this material include co-firing of the magnetic plates and thin insulating films, making the magnetic plates (of low hysteresis material, such as a ferrite) and insulating films separately, and using heat and/or pressure and/or adhesive or making a stack of magnetic plates with spacers in between them and dipping in a molten or liquid insulating material.