Abstract: A giant perpendicular magnetic anisotropy (PMA) material comprises a III-V nitride substrate, and a layer of nitrogen disposed upon a surface of the III-V nitride substrate. The layer of nitrogen forms an N-terminated surface. The PMA material further comprises an iron film disposed upon the N-terminated surface. The III-V nitride substrate may be gallium nitride (GaN). A memory device using the PMA material may further comprise an input/output interface configured to communicate an address signal, a read/write signal and a data signal. The memory device may further comprise a controller configured to coordinate reading data from and writing data to the memory element.

Abstract: Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.

Abstract: A method and system for providing a touchdown sensor for use in disk drive is described. The touchdown sensor includes a seed layer, a sensor layer on the seed layer, and a capping layer. The sensor layer includes NiFe. In some embodiments, at least one of the seed layer and the capping layer promote stability and performance of the sensor layer.

Abstract: Disclosed is a read head for reading data from a magnetic media. The read head includes a bottom magnetic shield layer, a top magnetic shield layer, and a read sensor disposed between the bottom and top magnetic shield layers. The read sensor is configured for sensing changes in a magnetic field of the magnetic media positioned under the read sensor. The read sensor has a front end adjacent to an air bearing surface (ABS) and a back end opposite the front end. The read head also includes a back magnetic shield layer positioned between the bottom and top magnetic shield layers and behind the back end of the read sensor distal to the ABS.

Abstract: A method and apparatus for detecting the presence of magnetic beads is disclosed. By providing both a static magnetic field and a magnetic field that alternates in the MHz range, or beyond, the bead can be excited into FMR (ferromagnetic resonance). The appearance of the latter is then detected by a magneto-resistive type of sensor. This approach offers several advantages over prior art methods in which the magnetic moment of the bead is detected directly.

Abstract: A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.

Abstract: A method and apparatus for detecting the presence of magnetic beads is disclosed. By providing both a static magnetic field and a magnetic field that alternates in the MHz range, or beyond, the bead can be excited into FMR (ferromagnetic resonance). The appearance of the latter is then detected by a magneto-resistive type of sensor. This approach offers several advantages over prior art methods in which the magnetic moment of the bead is detected directly.

Abstract: A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

Abstract: The invention relates to a magnetic recording head comprising: a bottom shield; a top shield; and AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic recording heads with GMR device free of electric-pop noise also are disclosed.

Abstract: A high magnetization, high resistivity, low corrosion and near zero magnetostriction soft adjacent layer (SAL) is provided for a magnetoresistive (MR) sensor of a read head. The MR sensor may either be an anisotropic MR (AMR) sensor or a spin valve sensor. In both sensors the SAL is CoHfNb or CoHfNbFe. The Hf is added to reduce corrosion and the Hf and Nb are balanced to provide near zero magnetostriction. The addition of Fe is an enhancer for reducing negative magnetostriction without diluting the magnetism of the alloy. Since CoHfNb has significantly higher magnetization than NiFeCr the SAL layer of CoHfNb can be thinner than the SAL of NiFeCr which results in a significantly higher resistance SAL. The higher resistance SAL equates to less shunting of the sense current through the SAL and better signal performance of the MR read head.

Abstract: A method for stabilizing magnetic domains in dual stripe magnetic read heads is provided. This method first comprises providing a plurality of coupled magneto-resistive read elements in a spaced relationship. These read elements include top and bottom patterned magnetic shields on ceramic substrates, with two magneto-resistive (MR) sensor elements between the shields, all separated by insulating layers. Magnetic support structures are provided adjacent and separated from the coupled read elements, wherein the magnetic support structures provide a uniform magnetic field that stabilizes the magnetic domains of the MR sensors in the coupled read elements.

Abstract: The invention relates to a magnetic recording head comprising: a bottom shield; a top shield; and AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic recording heads with GMR device free of electric-pop noise also are disclosed.

Abstract: A magneto-resistive (MR) stripe element includes a magnetically active body portion and a tri-layer electrical conductor structure arranged proximate the magnetically active body portion. The conductor structure has an alpha-Ta bi-layer film and a chromium capping layer. The alpha-Ta bi-layer film includes a chromium base layer and a tantalum layer. The capping layer caps the alpha-Ta bi-layer film such that the tantalum layer is disposed between the chromium base layer and the chromium capping layer. The tri-layer conductor structure has minimized compressive stress after deposition of the three layers and an even lower compressive stress after annealing. The thickness of the chromium capping layer is dependent at least upon the thickness of the chromium base layer such that the tri-layer conductor has a minimized compressive stress after deposition and annealing. The MR stripe element may be incorporated in a magnetic read head for reading data from a magnetic storage medium.

Abstract: The invention relates to a magnetoresistive device comprising: a bottom shield; a top shield; an AMR/GMR device; a first insulating gap layer between said bottom shield and said AMR/GMR; a second insulating gap layer between said AMR/GMR and said top shield; and conductive layer contacting electrically both said AMR.GMR device to siaid bottom shield. Furthermore, similar active devices free of electric-pop noise also be disclosed.

Abstract: The invention relates to a magnetoresistive device comprising: a bottom shield; a top shield; an AMR/GMR device; a first insulating gap layer between said bottom shield and said AMR/GMR; a second insulating gap layer between said AMR/GMR and said top shield; and conductive layer contacting electrically both said AMR/GMR device to said bottom shield. Furthermore, similar active devices free of electric-pop noise also be disclosed.

Abstract: The method of making the magnetic resistance element comprises the steps of: forming a first magnetizable layer, a non-magnetizable layer and a second magnetizable layer, in this order, on an insulating layer; providing a resist layer for forming a main part of the magnetic resistance element on the second magnetizable layer; etching side faces of the first magnetizable layer, the non-magnetizable layer and the second magnetizable layer to form into slope faces by ion milling from the second magnetizable layer side; forming terminals on the slope faces; and removing the resist layer, wherein a part of the first magnetizable layer which is located outside of the slope faces is left on the insulating layer when the side faces of the first magnetizable layer, the non-magnetizable layer and the second magnetizable layer are etched by ion milling.

Abstract: A soft adjacent layer made from a ternary alloy material and a MR sensor utilizing this soft adjacent layer. The ternary alloy material CoXY includes cobalt (Co), a first transition metal X and a second transition metal Y. In a preferred embodiment, X is niobium (Nb) and Y is titanium (Ti) so that the resulting ternary alloy material is CoNbTi. Alternatively, X and Y may be any transition metals such that the resulting ternary alloy material CoXY exhibits properties similar to CoNbTi. The high-density MR sensor of the present invention includes a SAL made from the ternary alloy material, a MR layer and a non-magnetic spacer sandwiched between the SAL and MR layer.

Abstract: A magnetoresistive (MR) read sensor fabricated on a substrate includes a ferromagnetic layer that is exchange coupled with an antiferromagnetic layer made of a defined composition of iridium manganese. A tantalum layer is used so that the exchange field and coercivity do not change with variations in annealing temperature. The antiferromagnetic layer is formed with a material composition of IrxMn100-x wherein x is in the range of 15<x>23. In an embodiment of a spin valve structure, the tantalum layer is disposed over the substrate and the antiferromagnetic layer is in direct contact with a pinned ferromagnetic layer. In another embodiment, the IrMn layer is formed over a soft active layer. In a third embodiment using exchange pinning, spaced IrMn regions are formed over the active MR layer to define the sensor track width.

Abstract: A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer.

Abstract: The present invention is a magnetoresistive (MR) sensor (100) that combines the advantages of abutted junction structure and regular overlaid structure. The abutted junction design is used with the soft adjacent layer (SAL) (108) and the overlaid structure is used with the MR element (120). The method of making the MR sensor (100) comprises depositing SAL (108) on top of the gap layer (106) and depositing spacer material (110) on top of the SAL (108). A mask (130) is placed over the central region of the spacer material (110) and SAL (108). The spacer material (110) and SAL (108) are removed in the areas not covered by the mask (130). An underlayer material (112) is deposited in the areas where the SAL (108) and spacer material (110) were removed. A hard-biasing material (114) is deposited on top of the underlayer (112).

Abstract: An exchange coupling film has an antiferromagnetic layer, a pinned magnetic layer, and a seed layer provided on the side of the antiferromagnetic layer 4 opposite to the pinned magnetic layer. The seed layer has a crystalline structure constituted mainly by face-centered cubic crystals with (111) planes substantially aligned. The seed layer is preferably non-magnetic. A laminate structure including the antiferromagnetic layer and a free layer inclusive of the intervening layers have crystalline orientations with their (111) planes substantially aligned, so that large crystal grains and, hence, large ratio of resistance variation can be achieved.

Abstract: Within a method for forming a magnetoresistive (MR) sensor element there is first provided a substrate. There is then formed over the substrate a first magnetoresistive (MR) layer having formed contacting the first magnetoresistive (MR) layer a magnetically biased first magnetic bias layer biased in a first magnetic bias direction with a first magnetic bias field strength. There is also formed separated from the first magnetoresistive (MR) layer by a spacer layer a second magnetoresistive (MR) layer having formed contacting the second magnetoresistive (MR) layer a magnetically un-biased second magnetic bias layer.

Abstract: An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions.