Using Conductor Patents (Class 360/327.24)
  • Patent number: 9019665
    Abstract: A reader sensor comprises a first shielding layer, a second shielding layer, a read element formed therebetween, and a pair of permanent magnet layer respectively placed on two sides of the read element; and it further comprises a magnetic field generating means formed beside the read element and arranged for providing a magnetic field with a direction perpendicular to the first shielding layer and the second shielding layer, thereby stabilizing the reading performance of the reader sensor. The invention can stabilize the reading performance, ameliorate the unstable defective reader sensor, and decrease the waste and the manufacturing cost. The present invention also discloses a magnetic head, a HGA and a disk drive unit.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: April 28, 2015
    Assignee: SAE Magnetic (H.K.) Ltd.
    Inventors: Chiuming Lueng, Mankit Lee, Cheukwing Leung, Juren Ding, Rongkwang Ni
  • Patent number: 8520344
    Abstract: A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance the stability of the magnetization direction of the pinned layer.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: August 27, 2013
    Assignee: Seagate Technology LLC
    Inventors: Song Sheng Xue, Paul Edward Anserson, Konstantin Rudolfovich Nikolaev, Patrick Joseph Ryan
  • Patent number: 8184409
    Abstract: A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance the stability of the magnetization direction of the pinned layer.
    Type: Grant
    Filed: October 5, 2010
    Date of Patent: May 22, 2012
    Assignee: Seagate Technology LLC
    Inventors: Song Sheng Xue, Paul Edward Anderson, Konstantin Rudolfovich Nikolaev, Patrick Joseph Ryan
  • Patent number: 8116042
    Abstract: A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.
    Type: Grant
    Filed: February 23, 2009
    Date of Patent: February 14, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Susumu Ogawa, Andrew Troup, David Williams, Hiroshi Fukuda
  • Patent number: 8094417
    Abstract: A magnetoresistance device has a channel extending between first and second ends in a first direction comprising non-ferromagnetic semiconducting material, such as silicon, a plurality of leads connected to and spaced apart along the channel, a gate structure for applying an electric field to the channel in a second direction which is substantially perpendicular to the first direction so as to form an inversion layer in the channel and a face which lies substantially in a plane defined by the first and second directions and which is configured such that an edge of the channel runs along the face.
    Type: Grant
    Filed: February 23, 2009
    Date of Patent: January 10, 2012
    Assignee: Hitachi, Ltd.
    Inventors: Susumu Ogawa, Andrew Troup, David Williams, Hiroshi Fukuda
  • Patent number: 7835116
    Abstract: A magnetoresistive stack includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer such that such that the magnetic stabilizer enhances the stability of the magnetization direction of the pinned layer.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: November 16, 2010
    Assignee: Seagate Technology LLC
    Inventors: Song Sheng Xue, Paul Edward Anderson, Konstantin Rudolfovich Nikolaev, Patrick Joseph Ryan
  • Patent number: 7158356
    Abstract: The invention relates to a magnetic recording head comprising: a bottom shield; a top shield; and AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic recording heads with GMR device free of electric-pop noise also are disclosed.
    Type: Grant
    Filed: March 3, 2004
    Date of Patent: January 2, 2007
    Assignee: Sae Magnetics (HK) Ltd.
    Inventors: Yong Shen, Kwok Kam Leung, Hiroshi Kiyono, Tetsuo Miyazaki
  • Patent number: 6663987
    Abstract: A magnetoresistive element includes an insulating layer formed between electrode layers, and the electrode layers are formed on a multilayer film so as to be in contact with the sides of the insulating layer. The thickness of the electrode layers can therefore be kept thick even at front end faces and a sensing current can flow into the multilayer film always at a constant level.
    Type: Grant
    Filed: November 29, 2000
    Date of Patent: December 16, 2003
    Assignee: Alps Electric Co., Ltd.
    Inventor: Yoshihiko Kakihara