Abstract: A reader sensor comprises a first shielding layer, a second shielding layer, a read element formed therebetween, and a pair of permanent magnet layer respectively placed on two sides of the read element; and it further comprises a magnetic field generating means formed beside the read element and arranged for providing a magnetic field with a direction perpendicular to the first shielding layer and the second shielding layer, thereby stabilizing the reading performance of the reader sensor. The invention can stabilize the reading performance, ameliorate the unstable defective reader sensor, and decrease the waste and the manufacturing cost. The present invention also discloses a magnetic head, a HGA and a disk drive unit.
Abstract: A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance the stability of the magnetization direction of the pinned layer.
Type:
Grant
Filed:
April 26, 2012
Date of Patent:
August 27, 2013
Assignee:
Seagate Technology LLC
Inventors:
Song Sheng Xue, Paul Edward Anserson, Konstantin Rudolfovich Nikolaev, Patrick Joseph Ryan
Abstract: A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance the stability of the magnetization direction of the pinned layer.
Type:
Grant
Filed:
October 5, 2010
Date of Patent:
May 22, 2012
Assignee:
Seagate Technology LLC
Inventors:
Song Sheng Xue, Paul Edward Anderson, Konstantin Rudolfovich Nikolaev, Patrick Joseph Ryan
Abstract: A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.
Type:
Grant
Filed:
February 23, 2009
Date of Patent:
February 14, 2012
Assignee:
Hitachi, Ltd.
Inventors:
Susumu Ogawa, Andrew Troup, David Williams, Hiroshi Fukuda
Abstract: A magnetoresistance device has a channel extending between first and second ends in a first direction comprising non-ferromagnetic semiconducting material, such as silicon, a plurality of leads connected to and spaced apart along the channel, a gate structure for applying an electric field to the channel in a second direction which is substantially perpendicular to the first direction so as to form an inversion layer in the channel and a face which lies substantially in a plane defined by the first and second directions and which is configured such that an edge of the channel runs along the face.
Type:
Grant
Filed:
February 23, 2009
Date of Patent:
January 10, 2012
Assignee:
Hitachi, Ltd.
Inventors:
Susumu Ogawa, Andrew Troup, David Williams, Hiroshi Fukuda
Abstract: A magnetoresistive stack includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer such that such that the magnetic stabilizer enhances the stability of the magnetization direction of the pinned layer.
Type:
Grant
Filed:
September 9, 2005
Date of Patent:
November 16, 2010
Assignee:
Seagate Technology LLC
Inventors:
Song Sheng Xue, Paul Edward Anderson, Konstantin Rudolfovich Nikolaev, Patrick Joseph Ryan
Abstract: The invention relates to a magnetic recording head comprising: a bottom shield; a top shield; and AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic recording heads with GMR device free of electric-pop noise also are disclosed.
Type:
Grant
Filed:
March 3, 2004
Date of Patent:
January 2, 2007
Assignee:
Sae Magnetics (HK) Ltd.
Inventors:
Yong Shen, Kwok Kam Leung, Hiroshi Kiyono, Tetsuo Miyazaki
Abstract: A magnetoresistive element includes an insulating layer formed between electrode layers, and the electrode layers are formed on a multilayer film so as to be in contact with the sides of the insulating layer. The thickness of the electrode layers can therefore be kept thick even at front end faces and a sensing current can flow into the multilayer film always at a constant level.