Abstract: The present subject matter relates to a battery module for use in a vehicle. The battery module may include a housing, a plurality of battery cells disposed within the housing, and solid state pre-charge control circuitry that pre-charges a direct current (DC) bus that may be coupled between the battery module and an electronic component of the vehicle. Furthermore, the solid state pre-charge control circuitry may include solid state electronic components as well as passive electronic components.

Abstract: In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.

Abstract: In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.

Abstract: Provided are transistor devices such as logic gates that are capable of associating a computational state and or performing logic operations with detectable electronic spin state and or magnetic state. Methods of operating transistor devices employing magnetic states are provided. Devices comprise input and output structures and magnetic films capable of being converted between magnetic states.

Abstract: In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.

Abstract: Systems and methods are provided for digital transport of paramagnetic particles. The systems and methods may include providing a magnetic garnet film having a plurality of magnetic domain walls, disposing a liquid solution on a surface of the magnetic garnet film, wherein the liquid solution includes a plurality of paramagnetic particles, and applying an external field to transport at least a portion of the paramagnetic particles from a first magnetic domain wall to a second magnetic domain wall of the plurality of magnetic domain walls.

Abstract: Between the value of an electric current and the supply duration for which the electric current is supplied that cause magnetization reversal, there is the relation of monotonous decrease. This means that, as the supply duration is shortened, the threshold current value for causing the magnetization reversal is larger. Therefore, in terms of suppressing occurrence of read disturb, the read current supply duration may be shortened to increase the threshold value of the current causing the magnetization reversal and thereby ensure a sufficient read disturb margin. Therefore, the read current supply duration may be shortened relative to the write current supply duration ensure the read disturb margin and suppress occurrence of read disturb.

Abstract: A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.

Abstract: A solid state pre-charge module includes a relay, a transistor connected to the relay and a solid state device connected to the transistor. The solid state device controls switching of the transistor.

Abstract: One block SB serving as a fundamental unit constituting a data reading circuit is constituted by four memory cells MS1 to MS4 connected electrically in series, four FETs S1 to S4 connected in parallel with the memory cells MS1 to MS4 in one-to-one correspondence, and an FET S0 connected to one of series connection ends of the memory cells MS1 to MS4. Each memory cell MS1-MS4 is formed out of a TMR element having two TMR element portions connected electrically in series. The two TMR element portions are connected in series to thereby form a series connection body. A sensing current flows in only through one end of the series connection body of the two TMR element portions, passes through the TMR element portions in turn, and then flows out only through the other end of the series connection body. Further, the TMR element 11 has two TMR element portions 11A and 11B. The TMR element portions 11A and 11B are disposed in a direction parallel with their laminated surfaces with respect to each other.

Abstract: A non-volatile memory array includes first and second pluralities of electrically conductive traces formed on a substrate. The second plurality of electrically conductive traces overlap first plurality of traces at a plurality of intersection regions. Each of a plurality of memory cells is located at an intersection region between one of the first plurality of traces and one of the second plurality of traces. At least one of the memory cells includes a non-linear selection element in series with a magnetic tunnel junction storage element. The non-linear selection element includes at least a first metallic electrode layer, a barrier layer and a second metallic electrode layer metal.

Abstract: An improved and novel multi-layer thin film device including a graded-stoichiometry insulating layer (16) and a method of fabricating a multi-layer thin film device including a graded-stoichiometry insulating layer (16). The device structure includes a substrate (12), a first electrode (14), a second electrode (18), and a graded-stoichiometry insulating, or tunnel-barrier, layer (16) formed between the first electrode (14) and the second electrode (18). The graded-stoichiometry insulating tunnel-barrier layer (16) includes graded stoichiometry to compensate for thickness profile and thereby produce a uniform tunnel-barrier resistance across the structure (10).

Abstract: A double tunnel junction is disclosed that can be used as a magnetic sensor or as random access memories. The preferred embodiment comprises three magnetic metal materials separated by two insulating layers. A current is passed through the first tunnel junction thereby developing a voltage in the second junction. The resistance of this device can be changed over a 100% when an external magnetic field of just a few gauss is applied.

Abstract: A non-physical movement component recording and reproducing device produces a pair of special waves with special waveforms that form a special stationary waveform. An electrically-conducting media contains three overlaid layers, a first layer contains the special stationary waveform, a middle layer allows signals to be recorded or be reproduced therein, and a third layer allows the signals to be connected. Two diodes are connected in reverse polarity to the third layer wherein one diode is used for recording and reproducing signals, while the other diode is used for erasing unused signals during the recording process. The bias voltage of the diodes is bigger than the peak value of the special waveform, but less than the maximum peak value of the special stationary waveform. The control unit changes at least one of the intermittence length and the phase of the special waves.

Abstract: A method of this invention is a non-overwritable method of recording information on a magnetooptical recording medium in which at least two layers including a first layer comprising a magnetic thin film having a perpendicular magnetic anisotropy, and a second layer comprising a magnetic thin film having a perpendicular magnetic anisotropy, and having a Curie temperature higher than or almost equal to a Curie temperature of the first layer are stacked to be exchange-coupled to each other, and a direction of magnetization of only the second layer can be aligned in a predetermined direction by a first external field at a room temperature while a direction of magnetization of the first layer is left unchanged. The medium which has already been set in a state wherein the direction of magnetization of the second layer is aligned in the predetermined direction, and a interface magnetic wall is formed between the first and second layers is prepared. A beam is radiated on the prepared medium while rotating the medium.

Abstract: A three-dimensional magnetic memory medium which comprises a substrate, a plurality of magnetic layers and a plurality of nonmagnetic layers. The magnetic layers and the nonmagnetic layers are alternately stacked one above the other on the substrate. Each magnetic layer comprises a transfer area, wherein assuming that n is a positive even whole number, the (n-1)th magnetic layer (the 3rd layer, the 5th layer, the 7th layer, . . .) has a transfer pattern different from that of the nth magnetic layer (the 2nd layer, the 4th layer, the 6th layer, . . .). An uppermost magnetic layer is used as a signal writing area and as a signal reading area. A position corresponding to a signal "1" and a position corresponding to a signal "0" are arranged in the signal writing area at a position superposed on a position of "1" and on a position of "0" in a transfer pattern of the (n-1)th magnetic layer, respectively.

Abstract: Wide temperature range magnetic bubble memories are realized by using new compositions of rare earth garnets which require nonlinear bias field for operation over a given temperature range. The bias field structure for providing the corresponding nonlinear bias field includes plates of barium ferrite plus additional plates of Ni-Cu alloys and/or polycrystalline dysprosium (or other rare earths, singly or in combination) iron garnet to provide a nonlinear bias field versus temperature characteristic to match that of the bubble layer.

Abstract: A method of manufacturing and using a magneto-optic device is provided in which a non-magnetic substrate material is utilized to support a laminate formed of at least two layers of magnetic material having certain magnetic and optical properties optimized in one layer and certain switching properties optimized in another layer. The laminate layers are exchange-coupled at their interface to permit the propagation of a magnetic domain wall through the interface from the switching optimized layer to the optically optimized layer so that the direction of magnetization and Faraday rotation of the entire multilayer magnetic material laminate can be reversed through application of an applied external magnetic field having a relatively small threshold value. A modified region of decreased anisotropy material is provided within the switching optimized layer to reduce the switching threshold field for the magneto-optic device to a fraction of the low threshold of the magnetic material of the switching optimized layer.

Abstract: Herein disclosed is a laminated magnetic bubble device of a multiple layer structure composed of at least one thin magnetic film having low coercive force and vertically oriented anisotropy which can allow easy generation and erasure of a magnetic bubble, and at least one thin magnetic film having high coercive force and vertically oriented anisotropy which will not be affected by a magnetic field of low level used for generating the magnetic bubble in the thin film of low coercive force.

Abstract: A magnetic device comprising at least one thin layer of a magnetizable material which has an easy axis of magnetization approximately normal to the surface of the layer. Magnetic domains are propagated in the layer by a rotating magnetic field in co-operation with a pattern of magnetizable material on the layer. Domains are detected by passing a current through a pattern of magneto-resistive material on the layer. At least in the part of the device where the detection occurs, the propagation and detection patterns have substantially the same configuration and one pattern is situated between the layer of magnetizable material and the other pattern.

Abstract: A magnetic sensor including first and second electromagnetic elements arranged one on the other is manufactured by depositing on a glass substrate a first magnetoresistive film of Fe-Ni permalloy, an insulating film of SiO.sub.2 and a second magnetoresistive film of Fe-Ni permalloy successively in this order and then these three films are simultaneously etched by a single etching treatment with aid of a photomask to form first and second magnetoresistive elements. Then, through-holes are formed in the second magnetoresistive film and insulating film to expose parts of the first magnetoresistive film. Next, an insulating photoresist film of polyimide is applied on the second magnetoresistive film and openings are formed in the insulating photoresist film at positions of the bottom of the through-holes and at positions corresponding to junctions to the second magnetoresistive film.

Abstract: A bi-level magnetic bubble domain propagation structure in which the domain guide structure is formed by a spatially periodic pattern of permalloy implemented on two discrete levels separated by a substantially vertical gap. The structure forms a pattern of contiguous disk on one level and the complementary image of such disks on the second level.

Abstract: Magnetic devices exemplified by bubble devices depend upon functional magnetic layers initially produced by epitaxy and reduced to effectively thinned surface layers by ion implantation. Implantation is at well-defined energy spectral levels which minimize effect on surface layers and which predominantly affect a "buried layer". As a result, such affected layer acts as a boundary layer of a functional layer which is spaced away from an interface between a substrate and a deposited layer.Commercial significance is primarily concerned with high bit density devices in which effectively thinned regions are less than 3 micrometers in thickness.

Abstract: A method of fabricating a microelectronic circuit device on a substrate by forming a layer of electrically and thermally conductive material (13) on a surface of a substrate (10). Channels are then etched in the layer of conductive material (13) to form patterns of the conductive material which are delineated from the remainder of the layer of conductive material.The channels are filled with an electrically insulating material (21, 22, 23) so as to form a substantially planar surface layer on the substrate. Finally, a microelectronic circuit device (e.g., 25) is formed on the substantially planar surface.

Abstract: In ion-implanted bubble memories where a patterned ion-implanted layer defines the propagation paths and the special functional elements, a uniform additional ion implant layer provides for a high degree of control over the nucleation level in the bubble material. Design flexibility and high generator margins are achieved.

Abstract: A magnetic bubble memory device and a method of fabricating the device are disclosed in which a conductor pattern lies at least between a film for maintaining magnetic bubbles therein, and a soft magnetic material pattern. Further, the magnetic bubble memory device can be formed precisely without suffering from errors due to mask alignment, by employing a mask provided with a plurality of patterns which are different in transmittance.

Abstract: Amorphous ferrimagnetic layers are described with support stable and mobile magnetic charged walls. These layers can be used as drive layers in magnetic bubble domain devices, and are characterized by very weak even-fold in-plane anisotropy, or substantially zero in-plane anisotropy. The layers are metallic alloy compositions having magnetic properties that can be tailored over wide ranges, and are particularly suitable as drive layers for the propagation of bubble domains of extremely small diameters.

Abstract: A small, highly reliable and inexpensive switching equipment, in which digital signals to be switched, stored as the presence or absence of magnetic domains in a first magnetic sheet or applied as the presence or absence of light to a flat plane formed by bundles of optical fibers, are switched by switching condition determining signals stored as the presence or absence of magnetic domains in a second magnetic sheet.

Abstract: Disclosed is a displacement sensor, comprising a pair of plates of magnetic bubble material disposed parallelly to each other across a space and a galvanomagnetic element disposed within the magnetic field formed in the aforementioned space and adapted to be allowed to move parallelly to the inner surfaces of the aforementioned pair of plates. The sensor thus constructed detects displacement or vibration with the galvanomagnetic element retained in a non-contact relation with the pair of plates on the principle that the output signal from the galvanomagnetic element varies in proportion to the amount of movement of this element in the space in response to displacement or vibration.

Abstract: Method of fabricating a magnetic bubble memory device in which the magnetizable upper overlay pattern of magnetically soft material, e.g. permalloy, defining bubble propagation elements and bubble function-determining components as located above a bubble-supporting magnetic film is disposed in a wholly planar configuration to avoid bubble propagation anomalies encountered with typical non-planar overlay patterns of magnetically soft material. The fabrication method provides for the consecutive deposition onto a substrate having a magnetic film capable of supporting magnetic bubbles of a layer of non-magnetic electrically conductive material, a layer of insulating material, and a layer of magnetically soft material, such as permalloy.

Abstract: A bubble storage system using contiguous propagation elements is described using magnetically soft drive layers for movement of the bubble domains in a bubble domain film, in response to the reorientation of a magnetic drive field in the plane of the drive layers. In contrast with prior art contiguous element propagation structures, charged walls are not employed for movement of bubble domains. Instead, magnetic poles along the drive layers are used to move the domains. Two drive layers are used, each of which is comprised of a magnetically soft material, such as permalloy. The drive layers are located at different heights with respect to the layer in which the magnetic bubble domains exist, the bottom drive layer being comprised of contiguous propagation elements defining a generally undulating edge along which the magnetic bubble domains move. This layer can be comprised of permalloy contiguous disks, diamonds, etc.

Abstract: A magnetic memory device in which information is stored in the form of strip domains in a layer of magnetic material supported by a layer of ferromagnetic material. The ferromagnetic material contains a pattern of alternately magnetized strips for sustaining a magnetic field periodically varying in a first coordinate direction and directed transverse to the domain layer. The device also includes a generator for receiving and converting data into configurations of the strip domains in the plate.

Abstract: A device for storing digital information in the form of magnetic domains including at least two ferrimagnetic layers on a substrate. The ferrimagnetic layers are separated by a compensation wall and in the presence of a bias magnetic field single magnetic domains and superposed magnetic domain pairs, the superposed domains being separated by a compensation wall, are generated. All single and superposed domains are mutually repulsive. The domains within a superposed pair are attracted to each other. The generated domains are propagated to a shift register and when the reigster is filled a row of domains is coincidentally propagated, transversely out of the register, to a domain array region adjacent the register. Rows are then propagated through the array region to a second shift register where they are individually detected and annihilated. A control device assures the proper working relationship between all elements.

Abstract: A magnetic bubble shift register store having a plate of magnetic material whose preferred magnetization direction extends transverse to the plane of the plate and in which bubbles are situated, said plate having two separate, elongated generally parallel extending continuous bubble paths, of lower bubble energy in comparison with the vicinity; the center lines of said paths being situated at a distance from each other which is at least equal to the mean bubble diameter. The 0-bits of written information to be transported and stored are represented by bubbles in the one path, while the 1-bits thereof are represented by bubbles in the other path. The interaction between the bubbles ensures that bubbles in the two paths cannot pass each other, with the result that the information represented by the bubbles can be unambiguously transported and maintained in the path direction.

Abstract: There is provided a self-biased structure which permits magnetic bubble domain device operation. The invention consists of three layers of material with a bias layer sandwiched between two bubble layers.

Abstract: A process for fabricating magnetic bubble domain devices having multiple layers. The process is a single high resolution mask process. A magnetizable layer, a conductive layer and at least one dielectric spacer layer are provided on a suitable magnetic bubble domain material and etched in a suitable manner such as by ion milling. The material layers may be applied such that the conductive layer is applied first and the magnetizable layer applied thereafter or vice versa.

Abstract: A magnetic bubble device comprising a non-magnetic substrate layer, and a sequence of magnetic layers joined to each other and to the magnetic substrate layer, e.g. by epitaxial growing of crystalline layers, whereby at least two of the magnetic layers may accommodate magnetic bubbles which are stably joined through an interlayer magnetic compensation wall, or by an essentially finite potential barrier.

Abstract: A laminated, integral structure that forms a bubble memory plane for the generation, storage and transfer of single wall domains, bubble domains or bubbles is disclosed. The memory plane is formed of a non-magnetic gadolinium gallium garnet (GGG) support member; formed upon the support member is a magnetizable layer that is capable of sustaining stripe domains; formed upon the stripe domain layer is a non-magnetic gadolinium gallium garnet (GGG) spacer layer; and, formed upon the spacer layer is a magnetizable layer in which single wall domains or bubbles are capable of being generated, sustained and transferred from one position to another along a planar dimension of the bubble domain layer.

Abstract: A bias field control arrangement for correcting the bias field in accordance with stability range variations in magnetic domain thin film layers. A thin film layer is provided auxiliary to the layers, which auxiliary layer responds to external environmental conditions such as temperature in a manner substantially identical to that of the magnetic domain layers. A pair of register-detectors are defined on the layer in the form of permalloy domain propagating elements, the dimensions of the elements of one being optimized to propagate domains of a diameter larger than that of a domain of a diameter which is optimum in view of the stability range of the layers and the dimensions of the elements of the other being optimized to propagate domains of a diameter smaller than that of the optimum diameter domain. For normal operation, the domains will be propagated along both channels with equal facility and an output comparison section at the output of the detectors produces no control signal.

Abstract: Disclosed is an apparatus for and a method of propagating bubble domains along fixed guidance channel forming stripe domains by capturing them in moveable stripe domains and then moving the capturing moveable stripe domains. The memory plane comprises a non-magnetic Gadolinium Gallium Garnet (GGG) layer which is a supporting substrate upon which are successively formed by the liquid phase epitaxy (LPE) method: a first stripe domain layer, a first non-magnetic spacer layer; a bubble domain layer; a second non-magnetic spacer layer; a second stripe domain layer; and a third non-magnetic spacer layer upon which is formed the necessary propagation circuitry.

Abstract: An apparatus for and a method of propagating bubble domains is disclosed. The apparatus includes a memory plane that is comprised of a non-magnetic support member upon which are formed a bubble domain layer and at least one stripe domain layer. The stripe domain layer has a set of relatively-narrow, periodic, potential well generating fixed stripe domains provided therein while the bubble domain layer has a set of relatively-wide, parallel, potential well generating fixed guidance channels provided therein that are oriented orthogonal to the parallel set of stripe domains in the stripe domain layer. Bubble domains are concurrently entered, in parallel, at one end of the memory plane in selected ones of the guidance channels. A periodic amplitude modulated bias field of frequency F propagates each of the bubble domains along the associated guidance channel from adjacent to next downstream adjacent stripe domain and thus through the memory plane at the frequency F.

Abstract: A storage device comprising a main magnetic field generator, a rotary magnetic field generator and a number of plates of magnetic material which are arranged transverse to the main magnetic field and in which magnetic domains can be formed and transported along a domain guide structure consisting of discrete element. The domain guide structure comprises a switching device incorporating diverging switches which are arranged according to four orientations which correspond to corresponding orientations of discrete elements of said domain guide structure. The domain guide structures comprise diverging switches which may be arranged to be shifted with respect to each other over one or more discrete elements of the domain guide structure in different plates, each plate having a specific rotary magnetic field sequence.

Abstract: In an improved bubble lattice file (BLF) structure, two adjacent layers of magnetic bubble domain material are utilized to provide separate media for supporting carrier bubbles or coded bubbles. The coded bubbles, in one layer, represent data stored in the bubble lattice file. The carrier bubbles, in another layer, are magnetically coupled to the coded bubbles and are used in manipulation thereof. The magnetic bubble domain layers may be separated by an appropriate interface layer or surface. The lattice file area, or storage area, is biased by a single layer of bias material while adjacent areas, such as an input/output region, include a pair of biasing layers disposed on opposite sides of the adjacent layer structure. This composite permits an improved bubble lattice file structure which utilizes the storage capabilities of bubble lattice file memories as well as the operating capabilities of so-called conventional magnetic bubble domain device techniques.

Abstract: A magnetic device comprising a first and a second plate of a magnetic material between which domains are situated. An interaction force occurs between the domains in the two plates. Stable domain positions in a second plate define equally stable domain positions in a first plate. One or both plates can be provided with domain guiding structures. Domain displacement in one plate can control a domain displacement in the other so that a variation in the interaction force is produced.