Abstract: A multi-chip package memory includes an interface chip generating at least one reference signal defined in relation to a reference process variation, and a stacked plurality of memory chips electrically connected to the interface chip via a vertical connection path and receiving the reference clock signal via the vertical connection path, wherein each one of the stacked plurality of memory chips is characterized by a process variation and actively compensates for said process variation in relation to the reference signal.

Abstract: Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

Abstract: Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.

Abstract: Methods are provided for forming a plurality of permanent magnets with two different north-south magnetic pole alignments for use in microelectromechanical (MEM) devices. These methods are based on initially magnetizing the permanent magnets all in the same direction, and then utilizing a combination of heating and a magnetic field to switch the polarity of a portion of the permanent magnets while not switching the remaining permanent magnets. The permanent magnets, in some instances, can all have the same rare-earth composition (e.g. NdFeB) or can be formed of two different rare-earth materials (e.g. NdFeB and SmCo). The methods can be used to form a plurality of permanent magnets side-by-side on or within a substrate with an alternating polarity, or to form a two-dimensional array of permanent magnets in which the polarity of every other row of the array is alternated.

Abstract: The invention relates to a magnetic memory with write inhibit selection and the writing method for same. Each memory element of the invention comprises a magnetic tunnel junction (70) consisting of: a magnetic layer, known as the trapped layer (71), having hard magnetisation; a magnetic layer, known as the free layer (73), the magnetisation of which may be reversed; and an insulating layer (72) which is disposed between the free layer (73) and the trapped layer (71) and which is in contact with both of said layers. The free layer (73) is made from an amorphous or nanocrystalline alloy based on rare earth and a transition metal, the magnetic order of said alloy being of the ferrimagnetic type. The selected operating temperature of the inventive memory is close to the compensation temperature of the alloy.

Abstract: A very small computer memory card is densely packed with a large number of flash EEPROM integrated circuit chips. A computer memory system provides for the ability to removably connect one or more of such cards with a common controller circuit that interfaces between the memory cards and a standard computer system bus. Alternately, each card can be provided with the necessary controller circuitry and thus is connectable directly to the computer system bus. An electronic system is described for a memory system and its controller within a single memory card. In a preferred physical arrangement, the cards utilize a main circuit board with a plurality of sub-boards attached thereto on both sides, each sub-board carrying several integrated circuit chips.

Abstract: A memory cell has a first switching element, a second switching element and a storage capacitor and formed in an active region. A first bit line and a first word line are connected to the first switching element and a second bit line and a second word line are connected to the second switching element. A plurality of the memory cells are formed within the active region which extends in a straight line. The active region extends at an angle with respect to the bit and word lines. The active region thus has no bent portions. The deterioration of the characteristics of the memory cell caused by the bent portions can be prevented.

Abstract: The invention comprises data processing systems and components thereof. Such systems may include a memory controller, a plurality of memory devices, a data bus coupling the memory controller with the plurality of memory devices, and at least one bus switch located in the data bus between the memory controller and one of the plurality of memory devices. Memory integrated circuits and memory modules including at least one switch in the data bus are also provided.

Abstract: A process for forming ferromagnetic targets for position and speed sensors. The targets are formed on a conductor-clad substrate by first applying a layer of photoresist material and then patterning and etching the photoresist to form trenches defined by the shape and dimensions of the required targets. Ferromagnetic material is formed in the trenches to complete the formation of the targets.

Abstract: A sheet random access memory (SHRAM) is a truly random access, nonvolatile and transportable memory characterized by the cell density, size and power requirements of smaller dynamic memories but having the nonvolatile character of core memories or magnetic disks and tape and the rugged transportability of magnetic disk and tape. The SHRAM is characterized by a memory media comprising a two dimensional magnetic substrate and a fixed driving device for writing and reading into the substrate and a fixed sensing device for sensing the information at each cell location. In one embodiment the fixed sensing device is a sensing line in close proximity to a cell location. In a second embodiment, a fixed sensing device includes a Hall effect device which senses the magnetic configuration of the cell. In a third embodiment, the fixed sensing device includes an SCS thyristor in which the cathode gate is coupled to the magnetic configuration of the cell.

Abstract: A magnetic coding arrangement (43) has a holder (11) in which small disk-shaped magnets (14) are mounted in bores (25). The magnets have different polarization (N, S) on their end faces. The diameter (D) of the magnets is slightly less than the diameter of the bores, so that the magnets can swing round freely in the bores where an outer magnetic field acts on them. Each magnet is retained in a particular end position by a soft-magnetic contact (20.1) which consists of a layer of soft-magnetic powder.Magnetic coding arrangements of this type are used, for example on workpiece-carriers so that these can be provided with the code of a workplace.

Abstract: An improved positional transducer is disclosed which utilizes an elongated, hollow, cylindrical tube of a magnetically saturable material, a sense wire that runs through the tube parallel to its elongated axis and a pair of elongated, generally rectangular shaped magnets of opposite polarity which are closely positioned adjacent diametrically opposite exterior portions of the tube. As the magnets move over in the tube, they provide substantially complete saturation of the tube in the portion over which they extend while the remaining portion of the tube remains unsaturated thereby giving a linear indication of the position of the magnets with respect to the tube. In the improved version, shown herein, adjustments of the electrical slope (volts/inches of travel) are achieved by a slot cut through the wall of the tube in the direction of the tube's length.

Abstract: An improved linear position sensor that utilizes a pair of elongated magnetically permeable tubular sensing elements and a pair of elongated magnets positioned to move with respect to the tubular sensing elements is disclosed. The sensor is provided with a housing structure having a pair of guide slots which guide a support plate for the tubular sensing elements, and a second pair of guide slots formed at right angles to the first pair of guide slots, which guide a pair of wings on the control member that carries the magnets, so that the elongated tubular sensing elements and the magnetic elements are accurately retained in place with respect to each other. The housing is formed with channels in its interior which receive a pair of elongated coil springs that bias the member. The structure is designed for ease of assembly with snap-together sub-assemblies.