Continuous Patents (Class 365/85)
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Patent number: 8995163Abstract: A magnetic memory according to an embodiment includes: a magnetic layer including a plurality of magnetic domains and a plurality of domain walls, and extending in a direction; a pinning layer formed with nonmagnetic phases and magnetic phases, extending in an extending direction of the magnetic layer and being located adjacent to the magnetic layer; an electrode layer located on the opposite side of the pinning layer from the magnetic layer; an insulating layer located between the pinning layer and the electrode layer; a current introducing unit flowing a shift current to the magnetic layer, the shift current causing the domain walls to shift; a write unit writing information into the magnetic layer; a read unit reading information from the magnetic layer; and a voltage generating unit generating a voltage to be applied between the pinning layer and the electrode layer.Type: GrantFiled: February 7, 2013Date of Patent: March 31, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Shiho Nakamura, Hirofumi Morise, Tsuyoshi Kondo
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Patent number: 8830718Abstract: A magnetic memory includes a magnetic wire, a first insulating layer, first electrodes a second electrode, a current supplying module, and a voltage applying module. The magnetic wire includes a first portion and a second portion, has a first electric resistance value, and is configured to form magnetic domains. The first electrodes are formed on the first insulating layer, arranged along the magnetic wire, and spaced from each other. The second electrode includes a third portion and a fourth portion. The second electrode is electrically connected to the first electrodes between the third portion and the fourth portion and has a second electric resistance value being larger than the first electric resistance value. The current supplying module is configured to supply the magnetic wire with a pulse current. The voltage applying module is configured to apply a voltage that decreases with time.Type: GrantFiled: July 29, 2013Date of Patent: September 9, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Tsuyoshi Kondo, Hirofumi Morise, Shiho Nakamura
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Patent number: 8743584Abstract: A shift register memory according to the present embodiment includes a magnetic pillar including a plurality of magnetic layers and a plurality of nonmagnetic layers provided between the magnetic layers adjacent to each other. A stress application part applies a stress to the magnetic pillar. A magnetic-field application part applies a static magnetic field to the magnetic pillar. The stress application part applies the stress to the magnetic pillar in order to transfer magnetization states of the magnetic layers in a stacking direction of the magnetic layers.Type: GrantFiled: August 30, 2012Date of Patent: June 3, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Fukuzumi, Hideaki Aochi
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Publication number: 20140063893Abstract: A shift register type magnetic memory according to an embodiment includes: a magnetic nanowire; a magnetic material chain provided in close vicinity to the magnetic nanowire, the magnetic material chain including a plurality of disk-shaped ferromagnetic films arranged along a direction in which the magnetic nanowire extends; a magnetization rotation drive unit configured to rotate and drive magnetization of the plurality of ferromagnetic films; a writing unit configured to write magnetic information into the magnetic nanowire; and a reading unit configured to read magnetic information from the magnetic nanowire.Type: ApplicationFiled: January 25, 2013Publication date: March 6, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Yoshiaki Fukuzumi, Hideaki Aochi
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Patent number: 8437167Abstract: According to one embodiment, a shift register memory device includes a shift register, a program/read element, and a rotating force application unit. The shift register includes a plurality of rotors arranged along one direction and provided with a uniaxial anisotropy. Each of the plurality of rotors has a characteristic direction rotatable around a rotational axis extending in the one direction. The program/read element is configured to program data to the shift register by causing the characteristic direction of one of the rotors to match one selected from two directions conforming to the uniaxial anisotropy and configured to read the data by detecting the characteristic direction. The rotating force application unit is configured to apply a rotating force to the shift register to urge the characteristic direction to rotate. The plurality of rotors are organized into a plurality of pairs of every two mutually adjacent rotors.Type: GrantFiled: March 18, 2011Date of Patent: May 7, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Yoshiaki Fukuzumi, Hideaki Aochi
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Patent number: 8406029Abstract: In a memory device and in a method for controlling a memory device, the memory device comprises a magnetic structure that stores information in a plurality of domains of the magnetic structure. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure. A position detector unit compares the information read by a read current from the read unit from multiple domains of the plurality of domains of the magnetic structure to identify the presence of an expected information pattern at select domains of the plurality of domains.Type: GrantFiled: February 16, 2010Date of Patent: March 26, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Ho-jung Kim, Chul-woo Park, Sang-beom Kang, Jong-wan Kim, Hyun-ho Choi, Young-pil Kim, Sung-chul Lee
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Patent number: 8313847Abstract: Information storage devices are provided. An information storage device includes a track including at least one Co alloy layer and a soft magnetic layer. The track further includes a plurality of magnetic domains. A current applying element is connected to the track. The track includes a plurality of layers stacked alternately.Type: GrantFiled: June 12, 2008Date of Patent: November 20, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Young-jin Cho, Ji-young Bae, Sung-chul Lee
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Patent number: 8231987Abstract: Example embodiments may provide data storage devices using movement of magnetic domain walls including a first magnetic layer having at least two magnetic domains with determinable magnetization directions, and/or a soft second magnetic layer formed on a lower surface of the first magnetic layer. Magnetic domain walls may be moved even in curved regions of the first magnetic layer.Type: GrantFiled: December 11, 2007Date of Patent: July 31, 2012Assignee: Samsung Electronics Co., Ltd.Inventor: Chee-kheng Lim
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Patent number: 8213210Abstract: A magnetic shift register including at least one magnetic track is provided. Each magnetic track has at least one set of burst data formed by a plurality of consecutive magnetic domains. Each magnetic domain has a magnetization direction corresponding to a stored data. A head magnetic domain having a given magnetization direction corresponding to a given stored data is set at a most front of the set of burst data, and the head magnetic domain and the set of burst data form a data storage unit. A method for reading a magnetic shift register is provided.Type: GrantFiled: September 23, 2009Date of Patent: July 3, 2012Assignee: Industrial Technology Research InstituteInventors: Chien-Chung Hung, Ching-Hsiang Tsai
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Patent number: 8023305Abstract: A magnetic domain wall memory apparatus with write/read capability includes a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location; a magnetic read element associated with each of the shift register structures; and a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a single write wire having a longitudinal axis substantially orthogonal to a longitudinal axis of each of the coplanar shift register structures.Type: GrantFiled: June 10, 2008Date of Patent: September 20, 2011Assignee: International Business Machines CorporationInventors: Michael C. Gaidis, Lawrence A. Clevenger, Timothy J. Dalton, John K. DeBrosse, Louis L. C. Hsu, Carl Radens, Keith Kwong-Hon Wong, Chih-Chao Yang
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Patent number: 8009453Abstract: A magnetic domain wall memory apparatus with write/read capability includes a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location; a magnetic read element associated with each of the shift register structures; and a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a write wire having a constriction therein, the constriction located at a point corresponding to the location of the plurality of discontinuities in the associated shift register structure.Type: GrantFiled: June 10, 2008Date of Patent: August 30, 2011Assignee: International Business Machines CorporationInventors: Michael C. Gaidis, Lawrence A. Clevenger, Timothy J. Dalton, John K. DeBrosse, Louis L. C. Hsu, Carl Radens, Keith Kwong-Hon Wong, Chih-Chao Yang
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Patent number: 7855908Abstract: An information storage device using magnetic domain wall motion and a method of operating the same are provided. The information storage device includes a magnetic track having a plurality of magnetic domains and magnetic domain walls arranged alternately. A current supply unit is configured to apply current to the magnetic track, and a plurality of reading/writing units are arranged on the magnetic track. The information storage device further includes a plurality of storage units. Each of the plurality of storage units is connected to a corresponding one of the plurality of reading/writing units for storing data temporarily.Type: GrantFiled: June 25, 2008Date of Patent: December 21, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: In-sung Joe, Yoon-dong Park, Seung-hoon Lee
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Patent number: 7751223Abstract: A magnetic memory device includes a recording layer, a reference layer, a first input portion and a second input portion. The recording layer has perpendicular magnetization direction and a plurality of magnetic domains, and the reference layer corresponds to a portion of the recording layer and has a pinned magnetization direction. The recording layer has a data storage cell wherein a plurality of data bit regions each including a magnetic domain are formed. The magnetic domain corresponds to an effective size of the reference layer. The first input portion inputs at least one of a writing signal and a reading signal. The second input portion is electrically connected to the recording layer and inputs a magnetic domain motion signal in order to move data stored in a data bit region of the recording layer to an adjoining data bit region.Type: GrantFiled: February 16, 2007Date of Patent: July 6, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-wan Kim, Kee-won Kim, Young-jin Cho, In-jun Hwang
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Patent number: 7738278Abstract: A magnetic memory device is provided. The magnetic memory device may include a memory track in which a plurality of magnetic domains is formed so that data bits, each of which may be a magnetic domain, are stored in an array. The memory track may be formed of an amorphous soft magnetic material.Type: GrantFiled: February 16, 2007Date of Patent: June 15, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-wan Kim, Young-jin Cho, Kee-won Kim, In-jun Hwang
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Publication number: 20090207643Abstract: Data storage devices using movement of magnetic domain walls and methods of operating the same are provided. A data storage device includes a magnetic track having a verifying region. Within the verifying region, first and second magnetic domains are arranged alternately. The first magnetic domains correspond to first data and the second magnetic domains correspond to second data. A verification sensor is arranged at an end of the verifying region. A current applying element is configured to apply one or more pulse currents to the magnetic track. A first counter is connected to the verification sensor and configured to count the number of magnetic domains passing through the verification sensor.Type: ApplicationFiled: August 11, 2008Publication date: August 20, 2009Inventors: In-sung Joe, Yoon-dong Park, Seung-hoon Lee
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Patent number: 7514271Abstract: A method of forming a magnetic domain wall memory apparatus with write/read capability includes forming a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location: forming a magnetic read element associated with each of the shift register structures: and forming a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a write wire having a constriction therein, the constriction located at a point corresponding to the location of one of the plurality of discontinuities in the associated shift register structure.Type: GrantFiled: March 30, 2007Date of Patent: April 7, 2009Assignee: International Business Machines CorporationInventors: Michael C. Gaidis, Lawrence A. Clevenger, Timothy J. Dalton, John K. DeBrosse, Louis L. C. Hsu, Carl Radens, Keith Kwong-Hon Wong, Chih-Chao Yang