Abstract: The olive oil-tuned broadband conjugated polymer laser medium includes the conjugated polymer known as poly ((9,9-dihexyl-9H-fluorene-2,7-vinylene)-co-(1-methoxy-4-(2-ethylhexyloxy)-2,5-phenylenevinylene)) or “Poly(FV-co-MEHPV)” at a 90:10 mole ratio. The emission wavelength of the olive oil tuned broadband conjugated polymer laser can be reversibly tuned between 500 nm and 680 nm.

Abstract: A compact system for performing laser ophthalmic surgery is disclosed. An embodiment of the system includes a mode-locked fiber oscillator-based ultra-short pulsed laser capable of producing laser pulses in the range of 1 nJ to 5 ?J at a pulse repetition rate of between 5 MHz and 25 MHz, a resonant optical scanner oscillating at a frequency of 200 Hz and 21000 Hz, a scan-line rotator, a movable XY-san device, a z-scan device, and a controller configured to coordinate with the other components of the system to produce one or more desired incision patterns. The system also includes compact visualization optics for in-process monitoring using a beam-splitter inside the cone of a patient interface used to fixate the patient's eye during surgery. The system can be configured such that eye surgery is performed while the patient is either sitting upright, or lying on his or her back.

Abstract: The present invention relates to a solid-state blended polymer system that has the property of tunable lasing wavelength through adjusting the blending ratio. It can be used for health monitoring, environmental monitoring sensor and tissue imaging. Current materials do not have the broad tunable range; from blue to infra-red across the optical range. By using the same two polymers, it is possible to produce laser emitting blue to red colour. It simplifies the design, eases multi-wavelength laser sensor system integration and therefore, making the production cost-effective.

Abstract: A semiconductor laser light source comprising an edge-emitting semiconductor body (10) is provided. The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113) which is formed for generating electromagnetic radiation which comprises a coherent portion (21). The semiconductor laser light source is formed for decoupling the coherent portion (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10) which is inclined with respect to the active layer (112). The semiconductor body (10) comprises a further external surface (102A, 102B, 102C) which is inclined with respect to the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) in the direction towards the further external surface (102A, 102B, 102C).

Abstract: A sample device and method for analyzing a sample are claimed. The sample device is a flat disc containing channels and wells for directing a sample to reagents located in the disc and for mixing the sample with the reagents. The disc is mounted on an analyzer and the sample is pumped into the disc, divided into a plurality of sub-sample, and at least some of the sub-samples are mixed with a number of reagents. The resultant analytes are analyzed spectrophotometrically for a determination of the concentration of various substances in the sample. The present invention permits multiple tests to be performed quickly and automatically with minimal operator involvement.

Abstract: A semiconductor integrated device includes a light-emitting portion including a first lower mesa, a first lower buried layer provided on a side surface of the first lower mesa, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa; and an optical modulator portion including a second lower mesa, a second lower buried layer provided on a side surface of the second lower mesa, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa. The first and second lower mesas include first and second core layers optically coupled to each other. The first and second lower buried layers are composed of a semi-insulating semiconductor. The first and second upper buried layers are composed of a resin material.

Abstract: A method of particle separation, wherein a collimated light source operable to generate a collimated light source beam is provided. The collimated light source beam includes a beam cross-section. A body is provided, wherein the body defines a wall and a first channel in a first plane. The first channel includes a first channel cross-section, the first channel being oriented to receive the collimated light source beam such that the beam cross-section completely overlaps the channel cross-section. The collimated light source beam is transmitted through the channel. A fluid sample is transmitted through the channel, fluid sample including a plurality of particles of a same type. All of the particles of the plurality of particles are separated axially along the collimated light source beam. All of the particles of the plurality of particles are retained against the wall in the collimated light source beam.

Abstract: A device and method of using same, wherein the device includes a collimated light source operable to generate a collimated light source beam, the collimated light source beam comprising a beam cross-section. The device further includes at least one body defining a first channel in a first plane, the first channel comprising a first channel cross-section, the first channel being oriented to receive the collimated light source beam such that the beam cross-section completely overlaps the first channel cross-section. Optionally, the body defines a second channel in a second plane orthogonal to the first plane, wherein the body defines a third channel in a third plane orthogonal to the first plane.

Abstract: The patent refers to one or more droplets of chiral liquid crystals used as point source(s) of laser light. The source is shaped as a droplet of chiral liquid crystals (1) and an active medium preferably dispersed in the liquid crystals. The source is spherical and with a size of preferably between a few nanometres and 100 micrometres. A droplet consists of chiral liquid crystals (1) that have selective reflection in the range of the active medium's emission and can be cholesteric liquid crystals, a mixture of nematic liquid crystals and a chiral dopant or any other chiral liquid-crystal phase, preferably the blue phase, the ferroelectric phase, the antiferroelectric phase, any of the ferrielectric phases or another chiral phase of a soft substance, that need not be chiral by itself.

Abstract: An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first side, a third side adjacent the first and second sides, and a fourth side opposing the third side. The architecture further includes a dichroic section disposed between the pump aperture and the first side of the gain region. The dichroic section is characterized by low reflectance at a pump wavelength and high reflectance at the laser wavelength. The architecture additionally includes a first cladding section proximate to the third side of the gain region and a second cladding section proximate to the fourth side of the gain region.

Abstract: To reduce the laser threshold by efficiently exciting a light-emitting body in a solid-state dye laser with light having high density, thereby facilitating emission of laser beams, and to miniaturize a solid-state dye laser including an excitation light source. A solid-state dye laser capable of emitting laser beams by efficiently introducing light from an excitation light source to a light-emitting body incorporated in an optical resonator structure and exciting the light-emitting body with light with high density, is realized.

Abstract: A laser gain medium crystal comprising a square rod of laser gain medium material having top and bottom surfaces that are finely ground to introduce scattering surfaces to cancel parasitic lasing. The square rod of laser gain material has input and output faces and side surfaces, and portions of the side surfaces near the output face of the square rod are finely ground to introduce scattering surfaces to cancel parasitic lasing. The rest of the side surfaces of the square rod are polished.

Abstract: In a nitride semiconductor laser chip so structured as to suppress development of a step on nitride semiconductor layers, the substrate has the (1-100) plane as the principal plane, the resonator facet is perpendicular to the principal plane, and, in the cleavage surface forming the resonator facet, at least by one side of a stripe-shaped waveguide, an etched-in portion is formed as an etched-in region open toward the surface of the nitride semiconductor layers.

Abstract: Embodiments disclosed herein relate to a laser die. The laser die includes a base epitaxial portion, a mesa portion, and first and second facets, wherein at least one of the first and second facets is flared such that an area of the facet is increased. Embodiments disclosed herein also relate to a high-speed laser. The high-speed laser includes a substrate, an active region positioned above the substrate, a mesa positioned above the active region, and one or more facets, wherein at least one of the one or more facets includes a flared portion configured to increase an area of the facet.

Abstract: The present invention generally relates to lasers comprising fluidic channels, such as microfluidic channels. In some instances, the channel contains two or more fluids. The fluids may remain non-mixed within the channel, for example, due to immiscibility and/or laminar flow within the channel. The fluids may be arranged in the channel such that light propagating in a first fluid is prevented by the second fluid from exiting the first fluid, for example, due to differences in the indexes of refraction (e.g., causing internal reflection of the fluid to occur). Thus, in one embodiment, a first fluid may be at least partially surrounded by a second fluid having a second index of refraction lower than the index of refraction of the first fluid. In some embodiments, the fluidic channel is used as a laser, for instance, a dye laser, i.e., a laser created by directing light at a dye to produce coherent light. The dye may be present in one or more fluids within the fluidic channel.

Abstract: The invention relates to a microfluidic dye laser including a pump light source configured to provide light having a pump light wavelength. The microfluidic dye laser also includes an elastomer substantially optically transparent at the pump light wavelength and at a microfluidic dye laser wavelength. A microfluidic channel configured to accept a fluidic dye is defined in the elastomer. An optical grating is formed in a single mode 3D waveguide in the microfluidic channel in order to provide a single mode microfluidic dye laser light as output in response to illumination with light from the pump light source. In another aspect, the invention features a method of tuning a wavelength of a microfluidic dye laser light by mechanically deforming the elastomeric laser chip to change the grating period in the optical cavity.

Abstract: Provided are a laser apparatus into which a large current can be injected and a production method which enables easy production of the apparatus. A laser apparatus includes a light-emitting region on a substrate, and a periodic refractive index structure containing an i-type material provided at a periphery of the light-emitting region. Another laser apparatus includes a light-emitting region between a first electrode and a second electrode on a substrate, wherein at least one of the first and the second electrodes includes a periodic refractive index structure.

Abstract: A light-receiving element has a photodiode formed in part of the top surface of a semiconductor substrate so as to function as a light-receiving region, and has a light-emitting element mount electrode formed on top of the semiconductor substrate where the light-receiving region is not formed. A high concentration impurity layer is formed below the top surface of the semiconductor substrate along the peripheral edges of the light-emitting element mount electrode. This helps prevent the voltage applied to the light-emitting element mount electrode from influencing the output of the light-receiving element. Alternatively, a photonic semiconductor device has a light-emitting element and a light-receiving element, and has the light-receiving region of the light-receiving element formed parallel to the direction in which the light-emitting element emits light.

Abstract: A nitride semiconductor laser device has a semiconductor multi-layer structure that includes a lower clad layer of a first conductive type, an active layer, and an upper clad layer of a second conductive type stacked in this order on a substrate, wherein a layer under the active layer includes a stripe-like trench; the semiconductor multi-layer structure includes a stripe-like optical cavity arranged along the stripe-like trench; the stripe-like trench has a narrower width in its both end regions compared to its central main region; and the active layer is formed of a nitride semiconductor containing In.

Abstract: A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

Abstract: A method for manufacturing a nitride semiconductor laser element, equipped with a laminate that has a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on a substrate, and constitutes a resonator, comprises the steps of: forming a first auxiliary groove having an exposed region extending in the resonator direction of the laser element and in which at least the second conductivity type nitride semiconductor layer and the active layer are removed from the second conductivity type nitride semiconductor layer side on both sides in the resonator direction of an element region where the laser element is formed on the surface of the laminate, thereby exposing the first conductivity type nitride semiconductor layer, and two protrusion regions that are narrower than the exposed region and protrude in the resonator direction from the exposed region; forming a second auxiliary groove whose angle of inclination of the side faces with respect t

Abstract: A laser diode capable of reducing a radiating angle ?? in the vertical direction, an optical pickup device, an optical disk apparatus, and optical communications equipment, all equipped with the laser diode which increases optical coupling efficiency. It has a first cladding layer of the first conductive type formed on a substrate, with an active layer on top of the first cladding layer and a second cladding layer of the second conductive type on top of the active layer. In at least the first or second cladding layer, it is formed of at least one optical guide layer having a higher refractive index than the first or second cladding layer and operating to expand a beam waist in the waveguide. This operation contributes to widening a region in which to shut up light, enabling a radiating angle ?? in the vertical direction to be reduced.

Abstract: It is an object of the present invention to provide a method that can provide regions having different thicknesses of a laminated body containing an organic compound with a light-emitting property in the same element and also can apply an electric field uniformly in all the regions of the element without depending on the thickness of the laminated body containing an organic compound with a light-emitting property. One laser element of the present invention has a laminated body containing an organic compound with a light-emitting property between two electrodes, and the laminated body includes a mixed layer of a metal oxide and an organic compound, which has a thickness distribution. The laser element emits light having different wavelengths in regions having different thicknesses of the mixed layer of a metal oxide and an organic compound, by applying voltage between two electrodes to feeding a current.

Abstract: Provided are a laser apparatus into which a large current can be injected and a production method which enables easy production of the apparatus. A laser apparatus includes a light-emitting region on a substrate, and a periodic refractive index structure containing an i-type material provided at a periphery of the light-emitting region. Another laser apparatus includes a light-emitting region between a first electrode and a second electrode on a substrate, wherein at least one of the first and the second electrodes includes a periodic refractive index structure.

Abstract: A conventional semiconductor laser diode is small in optical power at a constant operating current and limited in ridge width when integrated with an optical device, which forces the integration to be performed by lowering the original characteristic and makes it difficult to reduce cost and power consumption. In a semiconductor laser diode, widening of the ridge width is made possible by lowering the difference in refractive indexes between the ridge and other components, diffusion current and increase in the difference of refractive indexes are prevented by forming approximately vertical grooves along both sides of the ridge, and deterioration in characteristics due to regrowth is prevented by forming a diffraction grating on the ridge. The semiconductor laser diode is integrated with an optical device such as electroabsorption type optical modulator without increase of growth cycles and without restriction of the ridge width by using a tapered waveguide.

Abstract: The present invention relates to a laser gain medium comprising at least one active species adapted to be stimulated to emit laser light within a predetermined wavelength range and optical feedback means defining a resonator for said laser light. The feedback means comprise at least one substantially solid cholesteric layer having a substantially planar texture exhibiting selective reflection of light defined by a reflection band tuned to said predetermined wavelength range.

Abstract: An apparatus and method for gas/liquid separation on an array of jets or streams of liquid is provided. Layers of structured packing material are configured to “quiet” high-velocity liquid flow with entrained gas to provide a flow at moderate or low velocity from which the gas has been substantially separated from the liquid.

Abstract: A semiconductor laser module according to the present invention includes a polarization-synthesizing module having a polarization-synthesizing means configured to polarization synthesize two laser beams and a holder member for holding the polarization-synthesizing means with an approximately cylindrical circumferential surface, and a supporting member for supporting the holder member at least to rotate about an central axis and fixing the holder member at a predetermined position.

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract: The present invention provides an optical transmitting module capable of outputting a signal for precisely controlling bias and modulation current, and a transmitting optical sub-assembly using the same. The optical transmitting module of the invention builds a semiconductor laser diode 5 and a temperature sensor within a CAN type package. The CAN type package includes a base, a block provided on the base and mounting the laser diode on a side thereof, and a plurality of leads secured to the base. The laser diode is supplied current signal SDRV through one of leads, while the temperature sensor outputs a signal STEMP through the other of leads. The temperature sensor is mounted immediately close to the laser diode, accordingly, capable of monitoring the temperature of the laser diode.

Abstract: A system and a method for providing more gain while minimizing the potential for parasitic oscillation and amplified spontaneous emissions in an electrically pumped optical amplifier or laser system, utilizing a partitioned monolithic gain element. The monolithic gain element being partitioned into discontinuous amplifying gain regions such that parasitic modes and amplified spontaneous emissions are substantially obviated.

Abstract: In a solid state, optically end-pumped laser, the laser gain medium has a tapered diameter to minimize the maximum path length of barrelling amplified stimulated emission (ASE), and a roughened surface region at one end to scatter barrelling ASE out of the gain medium; thereby minimizing the negative effective of barrelling ASE's, and inhibiting the trapping of rays with a large longitudinal component, but disallowing a cyclic, i.e. repeated, pass path with specular reflections.

Abstract: A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.

Abstract: A semiconductor laser diode, in which an active layer is formed close to a bottom surface thereof, is fixed to a top surface of a substrate by means of solder layers in such a condition that the bottom surface of the semiconductor laser diode faces the top surface of the substrate, which is covered with a SiO2 layer. The active layer is interposed between a pair of V grooves. The right and left solder layers partially fill a clearance formed between the bottom surface of the semiconductor laser diode and the top surface of the substrate, leaving a vacant space in the vicinity of the active layer and the V grooves. Accordingly, the distortion of and the residual stress exerted on the active layer can be decreed noticeably, so that the operation of an optical semiconductor module can be stabilized.

Abstract: An optical gain medium, and a method for forming the same, is provided that exhibits lower wavelength crosstalk when configured as an optical amplifier than prior art optical gain media. The optical gain medium of the present invention includes a buried heterostructure waveguide fabricated in a multiple quantum well (MQW) region. The MQW region in which the buried heterostructure waveguide is located exhibits a continuously changing bandgap as a function of position along the waveguide direction, preferably such that the gain provided by the optical gain medium changes exponentially as a function of position along the waveguide direction. In a preferred embodiment, the MQW region in which the buried heterostructure waveguide is buried is grown using a selective-area-growth (SAG) technique, and is made up of at least two quantum wells, with at least one of the quantum wells having a size and composition that vary as a function of position along the waveguide direction.

Abstract: A high average power, low optical distortion laser gain media is based on a flowing liquid media. A diode laser pumping device with tailored irradiance excites the laser active atom, ion or molecule within the liquid media. A laser active component of the liquid media exhibits energy storage times longer than or comparable to the thermal optical response time of the liquid. A circulation system that provides a closed loop for mixing and circulating the lasing liquid into and out of the optical cavity includes a pump, a diffuser, and a heat exchanger. A liquid flow gain cell includes flow straighteners and flow channel compression.

Abstract: A method for forming an oxide VCSEL (vertical cavity surface-emitting laser) includes forming a VCSEL structure, forming an oxidation cavity partially through the VCSEL structure, oxidizing a layer in the VCSEL structure, forming a first passivation layer over a surface of the oxidation cavity, and forming a second passivation layer over the first passivation layer. An oxide VCSEL structure includes a bottom mirror region, an active region atop the bottom mirror region, a top mirror region atop the active region, an oxidation cavity partially through the top mirror region, a first passivation layer covering a surface of the oxidation cavity, and a second passivation layer covering the first passivation layer. In both the method and the structure, the first passivation layer can be made of silicon nitride (SiN) while the second passivation layer can be made of silicon oxynitride (SiON).

Abstract: Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting in a way of suppressing the undesired first and higher order modes of the laser which consume energy and do not contribute to the optical output of the laser, thus reducing it's efficiency. Essentially, the novel effect is provided by a structure comprising CIG—for Complex Index Guiding—elements on top of the laser diode. These CIG elements consist of one or a plurality of layers and must contain at least one layer which provides the optical absorption of undesired modes of the lasing wavelength and preferably contains an insulating layer as a first contact layer to the semiconductor.

Abstract: A red color laser diode 13 is die-bonded onto a silicon submount photodiode chip 11 having a insulating film 4 on the surface thereof. The silicon submount photodiode chip 11 receives a light beam radiated from a back side 13b of the red color laser diode 13 for monitoring an output of a light beam radiated from a front side 13a of the red color laser diode 13. The insulating film 4 of the silicon submount photodiode chip 11 is provided with a hole 14 located beneath an electrode 12 that die-bonds the red color laser diode 13 onto the silicon submount photodiode chip 11. Heat generated by the red color laser diode 13 is easily conducted to the silicon submount photodiode chip 11 through the hole 14 not covered with the insulating film 4 and discharged therefrom, which enables prevention of thermal destruction.

Abstract: A monolithic semiconductor optical device with excellent temperature and modulation characteristics and associated method of manufacturing whereby the device has a semiconductor substrate, a semi-insulating buried heterostructure GaInAsP-based DFB laser; and either a buried ridge type AlGaInAs-based EA or a self aligned structure (SAS) AlGaInAs-based EA modulator.

Abstract: A high power, single lateral mode semiconductor laser has a waveguide with regions of different widths coupled by a tapered region. The laser has a laterally confining optical waveguide having a highly reflecting first end and a second end. The optical waveguide has a first portion extending from the first end and a second portion extending from the second end. The first and second portions are coupled by a tapered waveguide. A width of the first portion is less than a width of the second portion. The first portion filters lateral optical modes higher than a fundamental lateral optical mode. An output is emitted from the second end of the optical waveguide.

Abstract: The present invention relates to an optical deflector driven by an electrical signal, and a wavelength tunable external resonator using the same. The optical deflector of a triangle shape, capable of controlling the refractive index of a beam depending on the electrical signal, is positioned between a reflection mirror and a diffraction grating in a Littman-Metcalf mode external resonator or between a lens and the diffraction grating in a Littrow mode external resonator. Thus, even with the reflection mirror and the diffracting grating fixed, the refractive index of the beam generated from a laser diode can be controlled by adjusting the electrical signal applied to the optical deflector, so that beam having a specific wavelength can be focused and the wavelength can be rapidly and consecutively tuned.

Abstract: A laser includes a first optically reflective element; a second optically reflective element opposed to and aligned with the first optically reflective element to define a laser cavity having an optical axis; an optical pump source for injecting optical pump energy into the laser cavity along the optical axis; a solid-state dye gain element having a thin host in which a dye is dissolved that is interposed between said first and second optically reflective elements along the optical axis for transforming the optical pump energy into a resonant optical signal; and a cooling element in thermal contact with the solid-state dye gain element for absorbing heat energy from the solid-state dye gain element to control the temperature of the solid-state dye gain element.

Abstract: The present invention is directed to a method and system for conditioning the output signals of an array of surface-emitting lasers with an array of edge-receiving optical devices. Both the array of surface-emitting lasers and the array of edge-receiving optical devices are mounted on an optical bench substrate. The array of edge-receiving optical devices may also be monolithically fabricated on the optical bench substrate. The array of surface-emitting lasers and the array of edge-receiving optical devices are aligned by alignment features and slots, which are fabricated on the optical bench substrate so as to optically couple the array of surface-emitting lasers to the array of edge-receiving optical devices.

Abstract: A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 &mgr;m and the etching depth is below the thickness of the p-side cladding layer of 0.1 &mgr;m and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 &mgr;m, an aspect ratio is improved in far field image.

Abstract: The inventive chiral laser achieves lasing by placing an electro-luminescent emitting layer with quarter wave plate properties and a layer of cholesteric liquid crystal (CLC) between two electrodes. The electrode connected to the emitting layer is highly reflective and serves as a source of electrons, while the second electrode, connected to the hole-transporting CLC, serves as a source of holes. The recombination of electrons and holes in the emitting layer produces luminescence. If a right handed CLC structure is used, then right circularly polarized emission is reflected from the CLC as right circularly polarized light, and then converted to linear polarized light by passing through quarter wave plate emitting layer. It is then reflected by the electrode and converted again into the right circularly polarized light in a second pass through the quarter wave plate emitting layer.

Abstract: Disclosed are a gain coupled distributed feedback type semiconductor laser device which has a high single-mode yield and a smaller variation in the oscillation threshold current and luminous efficiency, and a method of manufacturing the same. The semiconductor laser device has a gain or loss which periodically changes, and comprises a cavity; and a diffraction grating formed in the cavity in such a way that an absolute value of a gain coupling coefficient in a vicinity of at least one of facets of the cavity is smaller than an absolute value of a gain coupling coefficient in the other area.

Abstract: A sealed exhaust chemical oxygen-iodine laser (SECOIL) employing a sealed exhaust system (SES) is described. The SES is capable of selectively condensing and cryosorbing various chemical species contained in the laser-exhaust gas. Additionally, a condensable diluent is employed. The SES is configured so that the diluent and other condensables can be removed in a first stage with a high temperature condensing bed, while the oxygen can then be removed in a second stage in a low temperature sorbing bed. The result is a reduction in the weight, volume, and power consumption of the SECOIL system, especially the SES component thereof.

Abstract: A high average power, low optical distortion laser gain media is based on a flowing liquid media. A diode laser pumping device with tailored irradiance excites the laser active atom, ion or molecule within the liquid media. A laser active component of the liquid media exhibits energy storage times longer than or comparable to the thermal optical response time of the liquid. A circulation system that provides a closed loop for mixing and circulating the lasing liquid into and out of the optical cavity includes a pump, a diffuser, and a heat exchanger. A liquid flow gain cell includes flow straighteners and flow channel compression.

Abstract: A sealed exhaust chemical oxygen-iodine laser system is described, wherein the sealed exhaust system includes an adsorption bed for adsorbing sorbable material contained in the laser exhaust gas, and a temperature control assembly for controlling the temperature of the incoming laser exhaust gas and the adsorbent media of the adsorption bed.