Abstract: The processing system is provided with: a liquid supply device which can supply a liquid; a liquid processing device which processes a liquid supplied from the liquid supply device such that a non-liquid-immersion state is generated locally in a partial area including a target portion on a predetermined surface; a beam irradiation section which emits beams toward the target portion; and a moving apparatus which moves the predetermined surface. The beams are irradiated on the target portion to apply a predetermined processing to the target portion, in a state in which the target portion is in the non-liquid-immersion state.

Abstract: Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

Abstract: The present disclosure relates to a three-dimensional cylindrical cavity-type laser system capable of supporting circumferential radial emission. A cylindrical ring waveguide provides optical confinement in the radial and axial dimensions thereby supporting a plurality of radial modes, one of a plurality of axial modes and a plurality of degenerate azimuthal modes. These modes constitute a set of traveling wave modes which propagate around the cylindrical ring waveguide possessing various degrees of optical confinement as quantified by their respective Q-factors. Index tailoring is used to tailor the radial refractive index profile and geometry of the waveguide to support radial modes possessing Q-factors capable of producing efficient radial emission, while gain tailoring is used to define a gain confining region which offsets modal gain factors of the modal constituency to favor a preferred set of modes supporting efficient radial emission out of the total modal constituency supported by the resonator.

Abstract: A laser processing apparatus includes a holder configured to hold a workpiece, a head, a first nozzle, and a driver. The head is configured to irradiate a first portion of a main surface of the workpiece with a laser beam. The first nozzle is configured to supply a first liquid to the first portion. The driver is configured to drive the holder in such a manner that the workpiece can revolve around the optical axis of the laser beam at the first portion. Accordingly, the workpiece can be processed, and debris of the workpiece can be prevented from adhering to the main surface of the workpiece.

Abstract: A method for fabricating a photonic integrated circuit (PIC) comprises providing a wafer comprising an insulator layer positioned between a top semiconductor layer and a base semiconductor layer, patterning the top semiconductor layer to simultaneously define a waveguide and a first etch mask window for forming a fiber-guiding v-groove that substantially aligns to an axis of optical signal propagation of the waveguide, removing a first portion of the top semiconductor layer to form the waveguide according to the patterning, removing a second portion of the top semiconductor layer to form the first etch mask window according to the patterning, and forming the fiber-guiding v-groove according to the first etch mask window.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and a light extraction pattern in which a period (a) exceeds ?/n (where, ? is a wavelength of light emitted from the active layer, and n is a refractive index of the light emitting structure) on the light emitting structure. The period (a) may be in the range of 5×(?/n)<a<15×(?/n). An etching depth (h) of the light extraction pattern may be equal to or greater than ?/n.

Abstract: A waveguide is constructed by sandwiching a transparent member (4) and a laser medium (5) between a first clad 3-1 and a second clad 3-2. Pumping light (8) is made to be incident from a direction perpendicular to a direction of the optical axes of first to fourth laser oscillation light beams 9-1 to 9-4, and to alternately propagate through the transparent member (4) and the laser medium (5) in a zigzag manner so as to pump only resonator mode regions in the laser medium (5).

Abstract: An opto-electronic oscillator circuit, including: an opto-electronic circuit loop including an optical modulator that receives a first electrical signal and produces an optical output signal coupled with an optical resonator, a photodetector circuit optically coupled with the optical resonator, and a phase shifter coupled with the photodetector circuit for producing a phase shifted output signal that is fed back as the first electrical signal; an optical loop comprising the optical coupling of the optical resonator with the photodetector; and an electrical feedback circuit loop for coupling the first electrical signal with the photodetector circuit.

Abstract: Provided are a waveguide with which strain and defect caused by a manufacturing process or the like or caused in a semiconductor in an initial stage or during operation are suppressed so that improvement and stabilization of characteristics are expected, and a method of manufacturing the waveguide. A waveguide includes a first conductor layer and a second conductor layer that are composed of a negative dielectric constant medium having a negative real part of dielectric constant with respect to an electromagnetic wave in a waveguide mode, and a core layer that is in contact with and placed between the first conductor layer and the second conductor layer, and includes a semiconductor portion. The core layer including the semiconductor portion has a particular depressed and projected structure extending in an in-plane direction.

Abstract: A laser including a semiconductor laser stack group, a beam compositor, a pump beam collimator, a thin-disk laser crystal, a first and a second parabolic reflectors with the same facial contour function, a corrective reflector, an output mirror, and a jet-flow impact cooling system. The thin-disk laser crystal and the output mirror form a laser resonant cavity. The first parabolic reflector, second parabolic reflector, thin-disk laser crystal, and corrective reflector form a multi-pumping focus cavity. The jet-flow impact cooling system is used for cooling the thin-disk laser crystal. The pump light produced by the semiconductor laser stack group is composited by the beam compositor, collimated by the pump light collimator, and enters the multi-pumping focus cavity. Within the multi-pumping focus cavity, the pump light is focused, collimated, and deflected to converge on the thin-disk laser crystal. The laser resonant cavity produces and outputs a laser beam.

Abstract: The present embodiment provides a thin disk laser disk element having improved direct cooling through the use of a barrier material directly attached to the high reflectivity layer of the thin disk element. This barrier is needed due to noticeable degradation of the reflectivity of the thin disk element without the barrier material. A barrier material of sapphire (crystalline Al2O3) is preferable, given a desire to have adequate thermal conductivity through the barrier material, proper matching of the coefficient of thermal expansion with the other components of the thin disk, and to save monetary costs. In another preferred embodiment, an intermediate layer is interposed between the thin disk element and the barrier material to provide improved adhesion between the barrier material and the thin disk element. Preferred crystallographic orientations for sapphire barrier material are provided as well.

Abstract: Provided are a waveguide with which strain and defect caused by a manufacturing process or the like or caused in a semiconductor in an initial stage or during operation are suppressed so that improvement and stabilization of characteristics are expected, and a method of manufacturing the waveguide. A waveguide includes a first conductor layer and a second conductor layer that are composed of a negative dielectric constant medium having a negative real part of dielectric constant with respect to an electromagnetic wave in a waveguide mode, and a core layer that is in contact with and placed between the first conductor layer and the second conductor layer, and includes a semiconductor portion. The core layer including the semiconductor portion has a particular depressed and projected structure extending in an in-plane direction.

Abstract: A microlaser system, including a microlaser, having an elongated generally cylindrical substrate, a thin dopant film encircling at least a portion of the substrate, and a pumping laser positioned to shine onto the thin film. The thin film is between about 2 and about 10 microns thick. When the pumping laser shines on the thin film, the thin film lases in whispering gallery mode. The dopant is preferably selected from the group including transition metals and rare-earth elements. In a most preferred embodiment, the thin film is titanium-doped amorphous aluminum nitride.

Abstract: A waveguide amplifier, disposed on a substrate, composed of sputtered film of chalcogenide glass doped with Erbium is disclosed. The amplifier includes a substrate, a thick film of chalcogenide glass disposed on the substrate, a pumping device, and an optical combining device, wherein the waveguide is operable to amplify the optically combined signal. This type of amplifier has been shown to be compact and cost-effective, in addition to being transparent in the mid-IR range as a result of the low phonon energy of chalcogenide glass.

Abstract: Provided is a two dimensional photonic crystal surface emitting laser which can suppress light leaking outside in an in-plane direction of the two dimensional photonic crystal and an absorption loss in an active layer caused by serving as an absorbing layer without contributing to light emission, and can improve light use efficiency. The surface emitting laser has a laminated structure in which an active layer and a photonic crystal layer are laminated in a vertical direction, has a resonance mode in an in-plane direction of the photonic crystal, and extracts light in a vertical direction to a surface of the photonic crystal, wherein the laminated structure has a multi-refractive index layer including a central region made of a high refractive index medium and a peripheral portion made of a low refractive index medium with a lower refractive index than that of the high refractive index medium.

Abstract: The invention relates to fabrication of VCSELs. It provides a method for fabricating a VCSEL that contains a micro/nano-structured mode selective lateral layer, where the micro/nano-structured layer is obtained by well controlled local etching. The invention enables control of the micro/nano-structured layer thickness with very high precision. In particular, the invention relates to a method for fabricating a VCSEL with a micro/nano-structured mode selective layer for controlling the VCSELs transverse electromagnetic modes.

Abstract: A radiation-emitting semiconductor chip (1) comprising a thin-film semiconductor body (2) which has a semiconductor layer sequence with an active region (4) suitable for generating radiation, and a reflector layer (5) arranged on the thin-film semiconductor body. The semiconductor chip has a Bragg reflector in addition to the reflector layer, and the Bragg reflector (6) and the reflector layer are arranged on the same side of the active region.

Abstract: A composite assembly comprises a first component, a second component, and a coating formed on at least one of the first and second components. The coating comprises a layer of material for allowing the first and second components to be optically contacted, while the coating is optically inert when disposed between the first and second components.

Abstract: Plasmon-enable devices such as ultra-small resonant devices produce electromagnetic radiation at frequencies in excess of microwave frequencies when induced to resonate by a passing electron beam. The resonant devices are surrounded by one or more depressed anodes to recover energy from the passing electron beam as/after the beam couples its energy into the ultra-small resonant devices.

Abstract: An optically pumped disk type solid state laser oscillator includes: a cylindrical shape thin film laser gain medium having a through-hole; a ring mirror whose surface is opposing to a side surface of the thin film laser gain medium; a conical mirror arranged in the through-hole and reflects a light from the ring mirror to a direction perpendicular to the thin film laser gain medium where an output mirror is arranged. The ring mirror, the conical mirror and the output mirror compose a resonator for oscillating a laser beam to be outputted from the output mirror.

Abstract: A surface emitting laser (SEL) with an integrated absorber. A lower mirror and an output coupler define a laser cavity of the SEL. A monolithic gain structure positioned in the laser cavity includes a gain region and an absorber, wherein a saturation fluence of the absorber is less than a saturation fluence of the gain region.

Abstract: An optically pumped disk type solid state laser oscillator includes: a cylindrical shape thin film laser gain medium having a through-hole; a ring mirror whose surface is opposing to a side surface of the thin film laser gain medium; a conical mirror arranged in the through-hole and reflects a light from the ring mirror to a direction perpendicular to the thin film laser gain medium where an output mirror is arranged. The ring mirror, the conical mirror and the output mirror compose a resonator for oscillating a laser beam to be outputted from the output mirror.

Abstract: A Magneto-Optoelectronic Device MOD (10) includes a magnetic sensing device (12), such as a magnetoresistive device or a magnetic tunnel junction device, that is combined with a semiconductor light emitter (14), such as a LED or a laser diode, to create a compact integrated device where changes in an ambient magnetic field are expressed as changes in an optical beam intensity emanating from the MOD. Using the MOD (10) the magnetic field related information can be transmitted by a light wave over very large distances through some medium (34), for example, through free space and/or through an optical fiber.

Abstract: To provide a laser oscillator that has an oscillation wavelength in a visible region, and can enhance a conversion efficiency of photon output, and further suppress power consumption. The laser oscillator comprises a light emitting element formed on a substrate, and an optical resonator. The light emitting element includes a luminescent layer, an anode and a cathode, in which the luminescent layer is interposed between the anode and the cathode. The luminescent layer comprises a host material and a phosphorescent material, which is dispersed into the host material at a concentration of not smaller than 10 wt %. The anode and the cathode comprises a light transmitting property. In luminescence from the excimer state of the phosphorescent material, unidirectional light that intersects with the luminescent layer is amplified by the optical resonator.

Abstract: An SiO2 film is formed on a semiconductor layer stack, the SiO2 film having a thickness da and an etch rate Ra in buffered (BHF). A waveguide ridge with the SiO2 film thereon is formed using a resist pattern 76. An SiN film is formed on top and both sides of the waveguide ridge, while leaving the resist pattern in place, the SiN film having a thickness db and an etch rate Rb in BHF, where 1<(db/Rb)/(da/Ra). Then the resist pattern and the overlying portion of the SiN film are removed by lift-off to form an opening in the SiN film. Wet etching for a predetermined period of time with BHF removes the SiO2 film from the waveguide ridge, while leaving the SiN film in place.

Abstract: A semiconductor light-emitting device includes a light generation unit generating light with an oscillation wavelength ?, a light outgoing facet from which light generated at the light generation unit emerges, a light reflecting facet at which light generated at the light generation unit is reflected, and a high reflection film at the light reflecting facet and made of a dielectric multilayered film of at least three layers. The high reflection film includes a first layer which is in contact with the light reflection facet, is constituted of Al2O3, and has a thickness smaller than ?/4n, wherein n is the refractive index of Al2O3, a second layer which is in contact with the first layer, and a third layer which is in contact with the second layer and has a refractive index different from the refractive index of the second layer.

Abstract: A Magneto-Optoelectronic Device MOD (10) includes a magnetic sensing device (12), such as a magnetoresistive device or a magnetic tunnel junction device, that is combined with a semiconductor light emitter (14), such as a LED or a laser diode, to create a compact integrated device where changes in an ambient magnetic field are expressed as changes in an optical beam intensity emanating from the MOD. Using the MOD (10) the magnetic field related information can be transmitted by a light wave over very large distances through some medium (34), for example, through free space and/or through an optical fiber.

Abstract: A surface emitting laser comprises an underlayer, an active layer formed on the underlayer, a slab layer formed on the active layer and having a photonic crystal structure optically combined with the active layer, and a metal thin film formed on the slab layer and having a periodic fine structure; and enabling taking-out of the light beam propagating in a layer-plane direction in the slab layer through the metal thin film.

Abstract: A method for joining optical members, comprising a step of forming one dielectric thin film on a joining surface of one optical member, a step of forming another dielectric thin film on a joining surface of another optical member, and a step of making contact without scattering light between the one dielectric thin film and the another dielectric thin film together, wherein optical wavelength property as required can be obtained by joining the another dielectric thin film with the one dielectric thin film.

Abstract: A method for manufacturing an optical device includes the steps of: forming a first multilayer film, including forming a first mirror above a substrate, forming an active layer above the first mirror, forming a second mirror above the active layer, forming a semiconductor layer on the second mirror, and forming a sacrificial layer on the semiconductor layer; conducting a first examination step of conducting a reflectance examination on the first multilayer film; forming a second multilayer film by removing the sacrificial layer from the first multilayer film; conducting a second examination step of conducting a reflection coefficient examination on the second multilayer film; and patterning the second multilayer film to form a surface-emitting laser section having the first mirror, the active layer and the second mirror, and a diode section having the semiconductor layer, wherein the sacrificial layer is formed to have an optical film thickness of an odd multiple of ?/4, where ? is a design wavelength of ligh

Abstract: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.

Abstract: A method for adjusting the relative output power of individual output wavelengths of a multi-output-wavelength Raman laser (10) is disclosed. The method is characterized by the steps of suppressing the relative output power of a potentially most powerful output wavelength (98) in a first step (108), adjusting the relative output power of the shortest output wavelength (94) in a second step (110), adjusting the relative output power of further output wavelengths (96, 100, 102, 104) in a third step (112), and adjusting the relative output power of the potentially most powerful output wavelength (98) in a fourth step (114). Further, a device (68) that performs such a method is disclosed, i.e. a device for adjusting the relative output power of individual output wavelengths (94, 96, 98, 100, 102, 104) of such a laser (10).

Abstract: A chiral structure having an expanded adjustable reflection band to provide broadband tunability is provided. In the preferred embodiment, the chiral structure is implemented as a chiral fiber structure and comprises two or more sequential chiral fiber elements of different pitches, each having a tunable chiral defect generator. The pitches are selected such that the individual photonic band gaps of the elements are formed into one expanded reflection band such that at least one defect state can be formed and moved within the expanded reflection band by selectively activating and adjusting one or more of the tunable chiral defect generator. The tunable chiral defect generators may generate and control defect state(s) in the structure's spectral response by introducing chiral twists and/or spacing between the chiral elements, with the length of the spacings and angles of chiral twists being proportional to the position of the defect state(s) within the reflection band of the structure.

Abstract: An optical device is provided including an optically localising region comprising a first region having a first refractive index and an array of sub-regions having a second refractive index, the sub-regions in the array positioned at each of the vertices of the triangles in a pinwheel tiling structure. Light passing through the optical device is localised by multiple scattering events within the localising region. The localising region is isotropic so that transmission in the same in all directions and strong localisation occurs for a relatively broad band of frequencies. This is beneficial in a number of applications. The structure can be easily replicated and that there is always a set minimum spacing between the sub-regions.

Abstract: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.

Abstract: This invention relates to the field of lasers and in particular to the pump sources used in lasers. Many existing lasers use linear flashlamps in order to create population inversion in the gain medium of the laser. Such pump sources suffer from a number of drawbacks particularly when pumping dye lasers including explosive damage, long optical pulse length and inappropriate spectral emission. This invention provides a pump source for a laser which exploits the surface discharge phenomenon. A dielectric material (1) which is in contract with a gas (9) has electrical energy discharged across its surface in order to provide an electromagnetic emission which is then used to pump the gain medium. By varying the dielectric material or the cover gas used (amongst other variables) the surface emission can be used to pump the laser gain medium.

Abstract: Two thin-clad laser diodes are disposed to form a stack-type device that emits two beams. The beams are substantially parallel and in proximity such that they share many fiberoptic systems designed for a single beam. In one embodiment the device functions as a dual-wavelength fiber-pigtailed light source. In another embodiment a feedback mechanism is provided to couple the diodes. Other embodiments include structures and methods for output power enhancement and tunable lasers.

Abstract: A semiconductor-based optical amplifier using optically-pumped stimulated scattering includes an optical signal source (pump) and a wavelength selective coupler. The coupler is connected to receive an input optical signal and the pump signal and output the combined signals in a waveguide having a semiconductor core. The intensity of the pump signal is selected so that stimulated scattering occurs when the pump signal is propagated in the semiconductor core. Further, the wavelength of the pump signal is selected so that the stimulated scattering causes emission of a signal shifted in wavelength to be substantially equal to the wavelength of the optical input signal. Consequently, the input signal is amplified as it propagates with the pump signal. The amplifier can be disposed between reflectors to form a laser.

Abstract: The present invention includes infrared emitting materials and infrared emitting devices. The present invention demonstrates 1.54 micron infrared PL and EL emission from an organic complex. This provides a very simple way to obtain a light source at 1.54 micron wavelength that may be both optically and electrically pumped.

Abstract: A method of increasing the monomolecular recombination and the immunity to noise of a continuously tunable laser is disclosed. A concentration of recombination centers in the range of about 1×1016 cm?3 to about 1×1018 cm?3 in the tuning region of the laser device is achieved by doping the waveguide layer with impurity atoms, by irradiating the waveguide layer with high energy particles or by varying the growth conditions of the waveguide layer to introduce native point defects due to lattice mismatch. This way, the monomolecular recombination is increased and the radiative recombination over low current ranges is reduced. By increasing the monomolecular recombination, the immunity to noise is improved but the tuning efficiency is reduced. Nevertheless, only a minimal effect on the tuning efficiency is noted over high current ranges and, therefore, the overall tuning range is only insignificantly changed.

Abstract: Two thin-clad laser diodes are disposed to form a stack-type diode laser device. The diodes emit two beams that are substantially parallel and in proximity such that they share many fiberoptic systems designed for a single beam. The diodes are coupled by leaky waves through top surfaces. The leaky waves are generated by a thin metal contact layer or diffractive gratings. The stack-type device is employed for single-mode power enhancement and tunable lasers.

Abstract: A folded waveguide CO2 laser includes a plurality of waveguides arranged in a zigzag pattern with ends thereof overlapping. The laser includes a resonator having an axis extending through the plurality of waveguides. At least a portion of at least one of the waveguides has a uniform minimum width selected cooperative with the height of the waveguide and the laser wavelength such that the resonator can oscillate in only a single mode. At least a portion of one of the waveguides is tapered such that its width increases in one direction along the resonator axis. Tapering one or more of the waveguides provides that the total waveguide area and potential power output of the laser is greater than that of a zigzag arrangement of waveguides having the same total length waveguides each having a uniform width equal to the minimum width of the waveguide in the tapered waveguide arrangement.

Abstract: A microchip laser arrangement is disclosed. The arrangement is operative to emit Q-switched laser pulses at 1.54 &mgr;m. The lasing medium of the laser arrangement is preferably comprised of Yb:Er-glass, and the Q-switch is comprised of a saturable absorber of cobalt doped spinel crystal. The lasing medium is preferably bonded to the absorber to form a monolithic body, upon the surface of which there are deposited dielectric stacks forming a resonant laser cavity. Pumping of the active medium is performed by means of an InGaAs laser diode emitting light at 0.97 &mgr;m, corresponding well with the absorption of the Yb:Er-glass material.

Abstract: A display system, apparatus and method for generating a visible pattern onto a display surface responsive to an audio frequency input signal by emitting a visible beam of light along a predetermined beam axis, interposing a reflector along the beam axis for reflecting the light beam to form a reflected beam directed generally towards the display surface, a pair of movable coils and a magnetizable element associated with each coil responsive to audio frequency input signals for movement of the reflector to generate a pattern on the display surface, supporting the reflector proximate to the pair of coils for movement of the reflector relative to the magnetizable elements, the predetermined beam axis having an angle of variation of the visible beam of light which is greater than zero degrees and less than ninety-degrees, and the visible beam of light is preferably a laser beam.

Abstract: An organic light emitting device is provided. The device includes an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes material having the structure: M is a metal having an atomic weight greater than 40, m is at least 1, n is at least zero, R″ is H or any substituent, X is an ancillary ligand, and A is selected from the group consisting of aryl and heteroaryl rings, and B is an aryl ring. A material including the photoactive ligand of the above material is also provided.

Abstract: An optical device is provided including an optically localising region comprising a first region having a first refractive index and an array of sub-regions having a second refractive index, the sub-regions in the array positioned at each of the vertices of the triangles in a pinwheel tiling structure.

Abstract: A Raman amplifier according to the present invention comprises a plurality of pumping means using semiconductor lasers of Fabry-Perot, DFB, or DBR type or MOPAs, and pumping lights outputted from the pumping means have different central wavelengths, and interval between the adjacent central wavelength is greater than 6 nm and smaller than 35 nm. An optical repeater according to the present invention comprises the above-mentioned Raman amplifier and adapted to compensate loss in an optical fiber transmission line by the Raman amplifier. In a Raman amplification method according to the present invention, the shorter the central wavelength of the pumping light the higher light power of said pumping light.

Abstract: There is provided a semiconductor laser device, which has an oscillation wavelength that is greater than 760 nm and smaller than 800 nm, high reliability, long operating life and a high output, and an optical disk reproducing and recording apparatus that employs the semiconductor laser device. At least first and second lower clad layers 103 and 133, a quantum well active layer 105 constructed of well layers and barrier layers, first and second upper clad layers 107 and 109 are laminated on a GaAs substrate 101. The well layer is made of InGaAsP. The well layer has a great layer thickness d of 160 Å, and assuming that an optical confinement coefficient in one layer of the well layer is &Ggr;, then &Ggr;/d is set at a great value of 2.2×10−4 Å−1.

Abstract: A thin film laser emitting device includes a Bragg reflector including a recess and one or more diffraction gratings provided around the recess, a thin film laser layer formed in the recess, for generating lights, the lights being reflected by the diffraction gratings, a pair of electrodes, provided in the recess to have the thin film laser layer therebetween, and a laser emitting means, provided at a portion of the gratings, for emanating the reflected lights.

Abstract: Method of processing, e.g., laser annealing, objects such as semiconductor devices with pulsed lasers with high production yield and high reproducibility so as to obtain good characteristics stably. The pulse width of the irradiated pulse beam is set to more than 30 nsec to stabilize the processing. To achieve a pulse width exceeding 30 nsec, plural lasers are connected in series or in parallel and excited successively.