Distributed Feedback Patents (Class 372/96)
  • Patent number: 11984864
    Abstract: The disclosure relates to the technical field of semiconductors, and discloses a method for manufacturing a resonator. The method includes: a substrate is pretreated to change a preset reaction rate of a preset region part of the substrate, so that the preset reaction rate of the preset region part is higher than that of a region outside the preset region part; a preset reaction is performed to the substrate to form a sacrificial material part including an upper half part above an upper surface of the substrate and a lower half part below a lower surface of the substrate; a multilayer structure is formed on the sacrificial material part, and includes a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top; and the sacrificial material part is removed.
    Type: Grant
    Filed: December 27, 2018
    Date of Patent: May 14, 2024
    Assignee: THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
    Inventors: Liang Li, Xin Lv, Dongsheng Liang
  • Patent number: 11973307
    Abstract: This surface-emitting laser device comprises: a first reflective layer; an active region disposed over the first reflective layer; an aperture region which is disposed over the active region and comprises an aperture and an insulating region; a second reflective layer disposed over the aperture region; and a second electrode electrically connected to the second reflective layer. The second electrode comprises first to sixth conductive layers. The first conductive layer may comprises Ti, and the sixth conductive layer may comprise Au.
    Type: Grant
    Filed: April 12, 2019
    Date of Patent: April 30, 2024
    Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
    Inventors: Se Yeon Jung, Yong Gyeong Lee, Seung Hwan Kim
  • Patent number: 11955774
    Abstract: Provided is an elliptical multi-mesa laser structure, including a substrate layer, an N-DBR, a functional layer and a P-DBR sequentially arranged from bottom to top. The substrate layer is fixedly connected with an N contact layer. The N-DBR is fixedly connected to a top of the substrate layer, and the N contact layer is arranged around the N-DBR. A space layer is inserted in the N-DBR. The functional layer is fixedly connected to a top of the N-DBR. The P-DBR is fixedly connected to a top of the functional layer, and a top of the P-DBR is fixedly connected with a P contact layer. Another space layer is inserted into the P-DBR.
    Type: Grant
    Filed: July 1, 2023
    Date of Patent: April 9, 2024
    Assignee: SHENZHEN TECHNOLOGY UNIVERSITY
    Inventors: Hui Li, Jian Feng, Chuyu Zhong, Wei Miao, Shilong Zhao, Zhao Chen
  • Patent number: 11916355
    Abstract: Narrow beam divergence semiconductor sources are operable to generate a beam having a substantially narrow beam divergence, an emission wavelength, and a substantially uniform beam intensity. The presence of an extended length mirror can help suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: February 27, 2024
    Assignee: Princeton Optronics, Inc.
    Inventors: Jean-Francois Seurin, Robert Van Leeuwen, Chuni Ghosh
  • Patent number: 11916356
    Abstract: An emitter array, may comprise a first set of emitters that has a nominal optical output power at an operating voltage. The emitter array may comprise a second set of emitters that has substantially less than the nominal optical output power or no optical output power at the operating voltage. The first set of emitters and the second set of emitters may be interleaved with each other to form a two-dimensional regular pattern of emitters that emits a random pattern of light at the nominal optical output power at the operating voltage. The first set of emitters and the second set of emitters may be electrically connected in parallel.
    Type: Grant
    Filed: May 6, 2022
    Date of Patent: February 27, 2024
    Assignee: Lumentum Operations LLC
    Inventors: Vincent V. Wong, Jay A. Skidmore, Matthew Glenn Peters
  • Patent number: 11869963
    Abstract: A semiconductor device includes a support substrate having a first surface capable of supporting the epitaxial growth of at least one III-V semiconductor and a second surface opposing the first surface, at least one mesa positioned on the first surface, each mesa including an epitaxial III-V semiconductor-based multi-layer structure on the first surface of the support substrate, the III-V semiconductor-based multi-layer structure forming a boundary with the first surface and a parasitic channel suppression region positioned laterally adjacent the boundary.
    Type: Grant
    Filed: April 29, 2022
    Date of Patent: January 9, 2024
    Assignee: Infineon Technologies AG
    Inventors: John Twynam, Albert Birner, Helmut Brech
  • Patent number: 11852781
    Abstract: Waveguides and electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising waveguides fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. The devices include electromagnetic splitters, filters, and sensors.
    Type: Grant
    Filed: July 13, 2021
    Date of Patent: December 26, 2023
    Assignee: THE TRUSTEES OF PRINCETON UNIVERSITY
    Inventors: Paul J Steinhardt, Marian Florescu, Salvatore Torquato
  • Patent number: 11837583
    Abstract: A display device including a pixel circuit, an insulation layer covering the pixel circuit, an etching prevention layer disposed on the insulation layer, a first guide layer, a second guide layer, a first electrode, a second electrode, and a light emitting element. The first guide layer and the second guide layer may be disposed on the etching prevention layer and spaced apart from each other. The first electrode may be disposed on the first guide layer and electrically connected to the pixel circuit. The second electrode may be disposed on the first guide layer and insulated from the first electrode. The light emitting element may be in contact with the top surface of the etching prevention layer, disposed between the first guide layer and the second guide layer on a plane, and electrically connected to the first electrode and the second electrode.
    Type: Grant
    Filed: November 5, 2021
    Date of Patent: December 5, 2023
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Euikang Heo, Cha-Dong Kim, Hyunae Kim, Chongsup Chang
  • Patent number: 11749962
    Abstract: An optically pumped tunable VCSEL swept source module has a VCSEL and a pump, which produces light to pump the VSCEL, wherein the pump is geometrically isolated from the VCSEL. In different embodiments, the pump is geometrically isolated by defocusing light from the pump in front of the VCSEL, behind the VCSEL, and/or by coupling the light from the pump at an angle with respect to the VCSEL. In the last case, angle is usually less than 88 degrees. There are further strategies for attacking pump noise problems. Pump feedback can be reduced through (1) Faraday isolation and (2) geometric isolation. Single frequency pump lasers (Distributed feedback lasers (DFB), distributed Bragg reflector lasers (DBR), Fabry-Perot (FP) lasers, discrete mode lasers, volume Bragg grating (VBG) stabilized lasers can eliminate wavelength jitter and amplitude noise that accompanies mode hopping.
    Type: Grant
    Filed: January 13, 2021
    Date of Patent: September 5, 2023
    Assignee: Excelitas Technologies Corp.
    Inventors: Bartley C. Johnson, Walid A. Atia, Peter S. Whitney, Mark E. Kuznetsov, Edward J. Mallon
  • Patent number: 11670910
    Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes which are two-dimensionally periodically arranged within the guide layer; (d) etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; (e) supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer on the first embedding layer, The step (d) includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: June 6, 2023
    Assignees: KYOTO UNIVERSITY, STANLEY ELECTRIC CO., LTD.
    Inventors: Susumu Noda, Tomoaki Koizumi, Kei Emoto
  • Patent number: 11652333
    Abstract: A surface-emitting semiconductor laser includes a substrate, a first electrode provided in contact with the substrate, a first light reflection layer provided over the substrate, a second light reflection layer provided over the substrate, an active layer provided between the second light reflection layer and the first light reflection layer, a current confining layer that is provided between the active layer and the second light reflection layer and includes a current injection region, a second electrode provided over the substrate, with the second light reflection layer being interposed between the second electrode and the substrate, and a contact layer that is provided between the second electrode and the second light reflection layer and includes a contact region that is in contact with the second electrode, in which the contact region has a smaller area than an area of the current injection region.
    Type: Grant
    Filed: November 22, 2018
    Date of Patent: May 16, 2023
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshiaki Watanabe, Takayuki Kawasumi
  • Patent number: 11641240
    Abstract: An optical module includes: a light source; an optical modulator capable of modulating light from the light source; a capacitor with an upper electrode and a lower electrode; and a resistor connected in series with and bonded face-to-face to the upper electrode of the capacitor. The resistor and the capacitor are connected in parallel with the optical modulator.
    Type: Grant
    Filed: March 25, 2021
    Date of Patent: May 2, 2023
    Assignee: CIG PHOTONICS JAPAN LIMITED
    Inventors: Daisuke Noguchi, Hiroshi Yamamoto
  • Patent number: 11594857
    Abstract: Modification of the topology of selected regions of individual VCSEL devices during fabrication is utilized to provide an array output beam with specific characteristics (e.g., “uniform” output power across the array). These physical features include the width of the metal aperture, the width of the modal filter, and/or the geometry of the contact ring structure on the top of the VCSEL device. The modifications may also function to adjust the numerical apertures (NAs) of the devices, the beam waist, wallplug efficiency, and the like.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: February 28, 2023
    Assignee: II-VI Delaware Inc.
    Inventors: Giuseppe Tandoi, Norbert Lichtenstein, Lukas Mutter, Andre Bisig
  • Patent number: 11594656
    Abstract: Disclosed are a quantum light source and an optical communication apparatus including the same. The quantum light source device includes a vertical reflection layer disposed on a substrate, a lower electrode layer disposed on the vertical reflection layer, a horizontal reflection layer disposed on the lower electrode layer, a quantum light source disposed in the horizontal reflection layer, and an upper electrode layer disposed on the horizontal reflection layer.
    Type: Grant
    Filed: October 21, 2020
    Date of Patent: February 28, 2023
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Young-Ho Ko, Kap-Joong Kim, Byung-seok Choi, Won Seok Han
  • Patent number: 11563307
    Abstract: Example vertical cavity surface emitting lasers (VCSELs) include a mesa structure disposed on a substrate, the mesa structure including a first reflector, a second reflector defining at least one diameter, and an active cavity material structure disposed between the first and second reflectors; and a second contact layer disposed at least in part on top of the mesa structure and defining a physical emission aperture having a physical emission aperture diameter. The ratio of the physical emission aperture diameter to the at least one diameter is greater than or approximately 0.172 and/or the ratio of the physical emission aperture diameter to the at least one diameter is less than or approximately 0.36. An example VCSEL includes a substrate; a buffer layer disposed on a portion of the substrate; and an emission structure disposed on the buffer layer.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: January 24, 2023
    Assignee: Mellanox Technologies, Ltd.
    Inventors: Itshak Kalifa, Elad Mentovich
  • Patent number: 11539190
    Abstract: Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: December 27, 2022
    Assignees: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION, KOALA TECH INC.
    Inventors: Chihaya Adachi, Sangarange Don Atula Sandanayaka, Toshinori Matsushima, Kou Yoshida, Jean-Charles Ribierre, Fatima Bencheikh, Kenichi Goushi, Takashi Fujihara
  • Patent number: 11495939
    Abstract: A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: November 8, 2022
    Assignee: OSRAM OLED GMBH
    Inventors: Bruno Jentzsch, Alvaro Gomez-Iglesias, Alexander Tonkikh, Stefan Illek
  • Patent number: 11437782
    Abstract: An embodiment discloses a vertical cavity surface emitting laser including a substrate, a lower reflective layer disposed on the substrate, a laser cavity including an active layer and disposed on the lower reflective layer, an oxide layer disposed on the laser cavity, an upper reflective layer disposed on the oxide layer, a plurality of first holes formed in the upper reflective layer and the oxide layer, and an upper electrode disposed on inner sides of the plurality of first holes and disposed on the upper reflective layer, wherein the oxide layer includes a plurality of light emitting regions spaced apart from each other, and the plurality of first holes are disposed to surround each of the light emitting regions in a plan view.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: September 6, 2022
    Assignee: Rayir, Co.
    Inventors: Won Jin Choi, Dong Hwan Kim, Keuk Kim
  • Patent number: 11437778
    Abstract: According to an embodiment, a wavelength tunable laser comprising a gain region and a wavelength tunable area is disclosed. The wavelength tunable area comprises: a lower clad layer; a passive optical waveguide positioned on the lower clad layer; an upper clad layer positioned on the passive optical waveguide; a drive electrode positioned on the upper clad layer; a current blocking layer positioned on the drive electrode; a heater positioned on the current blocking layer; and a first insulating groove and a second insulating groove which are positioned so as to face each other with the passive optical waveguide therebetween.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: September 6, 2022
    Assignee: OE Solutions Co., Ltd.
    Inventor: Ki Hong Yoon
  • Patent number: 11431149
    Abstract: A laser including a grating configured to reduce lasing threshold for a selected vertically confined mode as compared to other vertically confined modes.
    Type: Grant
    Filed: March 19, 2020
    Date of Patent: August 30, 2022
    Assignee: Freedom Photonics LLC
    Inventors: Gordon Barbour Morrison, Milan L. Mashanovitch, Hannah Grant
  • Patent number: 11381058
    Abstract: A semiconductor laser including: a first mirror layer; a second mirror layer; an active layer, a current confinement layer, a first region, and a second region, in which the first mirror layer, the second mirror layer, the active layer, the current confinement layer, the first region, and the second region constitute a laminated body, the first region and the second region constitute an oxidized region of the laminated body, in a plan view, the laminated body includes a first part, a second part, and a third part disposed between the first part and the second part and resonating light generated in the active layer, and in a plan view, at least at a part of the third part, W1>W3 and W2>W3, W1 is a width of the oxidized region of the first part, W2 is a width of the oxidized region of the second part, and W3 is a width of the oxidized region of the third part.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: July 5, 2022
    Inventors: Junichi Okamoto, Takashi Hagino, Koichi Kobayashi, Takashi Miyata
  • Patent number: 11342451
    Abstract: A semiconductor device includes a support substrate having a first surface capable of supporting the epitaxial growth of at least one III-V semiconductor and a second surface opposing the first surface, at least one mesa positioned on the first surface, each mesa including an epitaxial III-V semiconductor-based multi-layer structure on the first surface of the support substrate, the III-V semiconductor-based multi-layer structure forming a boundary with the first surface and a parasitic channel suppression region positioned laterally adjacent the boundary.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: May 24, 2022
    Assignee: Infineon Technologies AG
    Inventors: John Twynam, Albert Birner, Helmut Brech
  • Patent number: 11313680
    Abstract: A technique for calculating charge in accordance with a state of use of a user in a rental business of total stations is provided. A total station includes a positioning unit, an operation receiving unit, a positioning mode selector, and a counter. The positioning unit performs positioning by using pulsed laser light. The operation receiving unit receives operation of a user. The positioning mode selector selects one of a first positioning mode and a second positioning mode on the basis of operation of the user to the operation receiving unit. In the first positioning mode, positioning is performed at a specific point at a relatively small laser wave number. In the second positioning mode, positioning is performed at a specific point at a relatively large laser wave number. The counter counts up each of the selected times of the first positioning mode and the second positioning mode.
    Type: Grant
    Filed: April 20, 2020
    Date of Patent: April 26, 2022
    Assignee: Topcon Corporation
    Inventor: Kaoru Kumagai
  • Patent number: 11251339
    Abstract: A process for fabricating an optoelectronic device for emitting infrared radiation, including: i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (Tepi), and a second bonding sublayer made from the metal of interest, iii) determining an assembly temperature (Tc) substantially between an ambient temperature (Tamb) and the epitaxy temperature (Tepi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m2; and iv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: February 15, 2022
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Vincent Reboud, Alexei Tchelnokov, Julie Widiez
  • Patent number: 11227744
    Abstract: In one embodiment, a multi-beam writing method includes forming a beam array of a multi-beam, assigning sub-beam arrays to each of a plurality of sub-stripe regions, the sub-stripe regions being obtained by dividing a region on the substrate, and the sub-beam arrays being obtained by dividing the beam array, calculating an irradiation time modulation rate being used for each beam belonging to each of the sub-beam arrays, calculating a weight for each of the sub-beam arrays based on the irradiation time modulation rate for each of the beams belonging to a group of the sub-beam arrays, and assigning the calculated weight to the sub-beam array, and performing multiple writing on each of the sub-stripe regions by performing writing on each of the sub-stripe regions with the sub-beam arrays, based on the weight assigned to the sub-beam array and the irradiation time modulation rate of the beam belonging to the sub-beam array.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: January 18, 2022
    Assignee: NuFlare Technology, Inc.
    Inventor: Hiroshi Matsumoto
  • Patent number: 11183814
    Abstract: A surface-emitting laser, which is a ridge waveguide structure, including: a substrate, a first cladding layer, an active layer, a conductive layer, a second cladding layer; the Bragg gratings is etched on the surface of the ridge waveguide; the two upper electrodes are disposed on both sides of the ridge waveguide; two grooves are formed between the ridge waveguide and each of the two upper electrodes; the first waveguide cladding layer includes one or more current confinement regions; or a buried tunnel junction is formed in the second cladding layer for limiting current. The Bragg gratings comprise two first-order gratings and one second-order grating placed between two first-order gratings.
    Type: Grant
    Filed: December 28, 2019
    Date of Patent: November 23, 2021
    Assignees: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Weihua Guo, Can Liu, Pengfei Zhang, Qiaoyin Lu
  • Patent number: 11152763
    Abstract: An InP-based monolithic integrated chaotic semiconductor laser chip capable of feeding back randomly diffused light, being composed of six regions: a left DFB semiconductor laser, a bidirectional SOA, a left passive optical waveguide region, a doped passive optical waveguide region, a right passive optical waveguide region, and a right DFB semiconductor laser, specifically including: an N+ electrode layer, an N-type substrate, an InGaAsP lower confinement layer, an undoped InGaAsP multiple quantum well active region layer, doped particles, distributed feedback Bragg gratings, an InGaAsP upper confinement layer, a P-type heavily doped InP cover layer, a P-type heavily doped InGaAs contact layer, a P+ electrode layer, a light-emitting region, and isolation grooves. It effectively solves problems of bulky volume of the existing chaotic laser source, the time-delay signature of chaotic laser, narrow bandwidth, and low coupling efficiency of the light and the optical waveguide.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: October 19, 2021
    Inventors: Mingjiang Zhang, Jianzhong Zhang, Ya'nan Niu, Yi Liu, Tong Zhao, Lijun Qiao, Anbang Wang, Yuncai Wang
  • Patent number: 11152760
    Abstract: A light emitter device (100) comprises a substrate (10) and a photonic crystal (20), which is arranged on the substrate (10) and comprises pillar- and/or wall-shaped semiconductor elements (21), which are arranged periodically standing out from the substrate (10), wherein the photonic crystal (20) forms a resonator, in which the semiconductor elements (21) are arranged in a first resonator section (22) with a first period (d1), in a second resonator section (23) with a second period (d2) and in a third resonator section (24) with a third period (d3), wherein on the substrate (10) the second resonator section (23) and the third resonator section (24) are arranged on two mutually opposing sides of the first resonator section (22) and the second period (d2) and the third period (d3) differ from the first period (d1), the first resonator section (22) forms a light-emitting medium and the third resonator section (24) forms a coupling-out region, through which a part of the light field in the first resonator sectio
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: October 19, 2021
    Assignee: Forschungsverbund Berlin e.V.
    Inventors: Oliver Brandt, Lutz Geelhaar, Ivano Giuntoni
  • Patent number: 11133440
    Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
    Type: Grant
    Filed: August 6, 2020
    Date of Patent: September 28, 2021
    Assignee: BRIDGELUX, INC.
    Inventors: Frank T. Shum, William W. So, Steven D. Lester
  • Patent number: 11127882
    Abstract: Resonant optical cavity light emitting devices are disclosed, where the device includes an opaque substrate, a first reflective layer, a first spacer region, a light emitting region, a second spacer region, and a second reflective layer. The light emitting region is configured to emit a target emission deep ultraviolet wavelength and is positioned at a separation distance from the reflector. The second reflective layer may have a metal composition comprising elemental aluminum and a thickness less than 15 nm. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K·?/n. K is a constant ranging from 0.25 to 10, ? is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: September 21, 2021
    Assignee: Silanna UV Technologies Pte Ltd
    Inventor: Petar Atanackovic
  • Patent number: 11086047
    Abstract: Waveguides and electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising electromagnetic cavities fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. Devices comprising waveguides fabricated in hyperuniform disordered materials with complete photonic bandgaps are provided. The devices include electromagnetic splitters, filters, and sensors.
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: August 10, 2021
    Assignee: The Trustees of Princeton University
    Inventors: Paul J Steinhardt, Marian Florescu, Salvatore Torquato
  • Patent number: 11031752
    Abstract: A surface-emitting laser according to an embodiment of the present disclosure includes a current constriction region having an opening and formed by impurities injected into a laminate from side of a second semiconductor layer; and a first DBR layer on side of a first semiconductor layer and a second DBR layer on the side of the second semiconductor layer having the laminate interposed therebetween at a position facing the opening. At the opening, an opening diameter close to the first DBR layer is larger than an opening diameter close to the second DBR layer.
    Type: Grant
    Filed: October 19, 2017
    Date of Patent: June 8, 2021
    Assignee: Sony Corporation
    Inventors: Tatsushi Hamaguchi, Jugo Mitomo, Hiroshi Nakajima, Masamichi Ito, Susumu Sato, Noriyuki Futagawa
  • Patent number: 11025033
    Abstract: Various embodiments of the present disclosure are directed towards a vertical cavity surface emitting laser (VCSEL) device. The VCSEL device includes a bond bump overlying a substrate. A VCSEL structure overlies the bond bump. The VCSEL structure includes a second reflector overlying an optically active region and a first reflector underlying the optically active region. A bond ring overlying the substrate and laterally separated from the bond bump. The bond ring continuously extends around the bond bump.
    Type: Grant
    Filed: May 21, 2019
    Date of Patent: June 1, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jhih-Bin Chen, Ming Chyi Liu
  • Patent number: 10992097
    Abstract: An apparatus is provided. The apparatus comprises: an optical resonator including a surface; wherein a Bragg grating is formed at least part of the surface of the optical resonator; and wherein the Bragg grating has a Bragg frequency substantially equal to a center frequency of an Nth order Brillouin gain region capable of generating an Nth order Stokes signal.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: April 27, 2021
    Assignee: Honeywell International Inc.
    Inventors: Matthew Wade Puckett, Karl D. Nelson, Jianfeng Wu
  • Patent number: 10938178
    Abstract: A vertical-cavity surface-emitting laser (“VCSEL”) has at least a substrate, electrical contacts, a first mirror region, a second mirror region and an active region between the mirror regions; where the mirror regions comprise distributed Bragg reflectors formed of a plurality of layers; laser emission is from at least one gallium arsenide antimonide nanostructure in the active region; and each said nanostructure contains more antimony atoms than arsenic atoms.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: March 2, 2021
    Assignee: Lancaster University Business Enterprises Limited
    Inventors: Manus Hayne, Peter David Hodgson
  • Patent number: 10833479
    Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: November 10, 2020
    Assignee: Sony Corporation
    Inventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida
  • Patent number: 10811844
    Abstract: Provided is an external cavity laser (ECL) including a vertical cavity surface emitting laser (VCSEL)-Distributed Bragg Reflector (DBR) type light emitting unit configured to receive a current and emit light, and including a DBR function layer and an active layer for a quantum well formed on one side of this DBR function layer, and an optical circuit unit including a light guide in which one end surface is installed to face an active layer at one side of the active layer, light generated from the active layer is received and guided, and an optical axis is formed vertically to an active layer plane, a reflection pattern that is formed at one side of the light guide so as to receive light output from the other end of the light guide to reflect the light again to the light guide, and an external layer for surrounding the light guide and the reflection pattern, wherein the VCSEL-DBR type light emitting unit and the optical circuit unit are mutually coupled to each other.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: October 20, 2020
    Assignee: Cosemi Technologies, inc.
    Inventor: Chang Joon Chae
  • Patent number: 10559705
    Abstract: A multijunction solar cells that include one or more graded-index reflector structures disposed beneath a base layer of one or more solar subcells. The graded-index reflector structure is constructed such that (i) at least a portion of light of a first spectral wavelength range that enters and passes through a solar cell above the graded-index reflector structure is reflected back into the solar subcell by the graded-index reflector structure; and (ii) at least a portion of light of a second spectral wavelength range that enters and passes through the solar cell above the graded-index reflector structure is transmitted through the graded-index reflector structure to layers disposed beneath the graded-index reflector structure. The second spectral wavelength range is composed of greater wavelengths than the wavelengths of the first spectral wavelength range.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: February 11, 2020
    Assignee: SolAero Technologies Corp.
    Inventor: Daniel Derkacs
  • Patent number: 10541349
    Abstract: A method of manufacturing an inverted metamorphic multijunction solar cell is disclosed herein. The method includes forming a lattice constant transition material positioned between a first subcell and a second subcell using a metal organic chemical vapor deposition (MOCVD) reactor. The solar cell further includes at least one distributed Bragg reflector (DBR) layer directly adjacent a back surface field (BSF) layer.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: January 21, 2020
    Assignee: SolAero Technologies Corp.
    Inventors: Mark A. Stan, Arthur Cornfeld
  • Patent number: 10355454
    Abstract: Provided is an optical semiconductor device which has long-term reliability since a threshold current is small, and a relaxation oscillation frequency is high. An optical semiconductor device includes an InP semiconductor substrate, a lower mesa structure that is disposed above the InP semiconductor substrate, and includes a multiple quantum well layer, an upper mesa structure that is disposed on the lower mesa structure, and includes a cladding layer, a buried semiconductor layer that buries both side surfaces of the lower mesa structure, and an insulating film that covers both side surfaces of the upper mesa structure by being in contact with both side surfaces of the upper mesa structure, in which the lower mesa structure includes a first semiconductor layer, above the multiple quantum well layer, and the upper mesa structure includes a second semiconductor layer which is different from the cladding layer in composition, below the cladding layer.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: July 16, 2019
    Assignee: Oclaro Japan, Inc.
    Inventors: Kouji Nakahara, Takeshi Kitatani
  • Patent number: 9997892
    Abstract: A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: June 12, 2018
    Assignee: FINISAR CORPORATION
    Inventor: Ralph H. Johnson
  • Patent number: 9991670
    Abstract: A laser light source device having a simple configuration and an inspection device are provided. A laser light source device 200 according to an exemplary embodiment in accordance with the present invention has a repetition frequency of 1 MHz or higher, and includes fundamental wave generation means 201 for oscillating laser light including a fundamental wave with its center wavelength being included in one of first to fourth wavelength bands, and means 205 for generating a sixth harmonic of pulsed laser light extracted from the fundamental wave generation means 201. The first wavelength band is 1064.326 nm to 1064.511 nm. The second wavelength band is 1064.757 nm to 1064.852 nm. The third wavelength band is 1063.805 nm to 1063.878 nm. Further, the fourth wavelength band is 1063.962 nm to 1064.031 nm.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: June 5, 2018
    Assignee: Lasertec Corporation
    Inventors: Kiwamu Takehisa, Jun Sakuma
  • Patent number: 9991669
    Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: June 5, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
  • Patent number: 9966735
    Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.
    Type: Grant
    Filed: June 21, 2016
    Date of Patent: May 8, 2018
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Cheng-Wei Cheng, Frank R. Libsch, Tak H. Ning, Uzma Rana, Kuen-Ting Shiu
  • Patent number: 9959612
    Abstract: Methods for characterizing atmospheric turbulence along an optical path from a laser transmitter to a laser receiver can include the steps of counting the number of laser speckles at the receiver imaging plane, and then finding Fried's parameter r0 using the counting result to characterize the turbulence along the path. Before counting speckles, images at the receiver image plane can be preprocessed by capturing the images. The captured images at the image plane can then be blurred and a threshold can be chosen so that only certain pixels in the image are further processed. The thresholding can be via Otsu's methods or via variants of a Gaussian fit. Kostelec's method can then be used to count speckles in the portions of the image that have made it through the thresholding step. Other counting methods could be used. Fried's can then be found using the speckle count.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: May 1, 2018
    Assignee: The United States of America, as Represented by the Secretary of the Navy
    Inventors: Galen D. Cauble, David T. Wayne
  • Patent number: 9843161
    Abstract: A quantum cascade laser includes a substrate including first and second regions arranged along a first axis; a stacked semiconductor layer disposed in the second region, the stacked semiconductor layer having an end facet located on a boundary between the first and second regions, the stacked semiconductor layer including a core layer and a cladding layer that are exposed at the end facet thereof; and a distributed Bragg reflection structure disposed in the first region, the distributed Bragg reflection structure including a semiconductor wall and a covering semiconductor wall that covers the end facet of the stacked semiconductor layer. The semiconductor wall and the covering semiconductor wall are made of a single semiconductor material. The semiconductor wall provides first and second side surfaces. The covering semiconductor wall provides an end facet that is located away from the first and second side surfaces of the semiconductor wall.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: December 12, 2017
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventor: Jun-ichi Hashimoto
  • Patent number: 9762031
    Abstract: A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of microelectromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz.
    Type: Grant
    Filed: November 2, 2015
    Date of Patent: September 12, 2017
    Assignee: InPhenix, Inc.
    Inventors: Toshihiko Makino, Tongning Li, David Eu
  • Patent number: 9745668
    Abstract: A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: August 29, 2017
    Assignee: THE BOEING COMPANY
    Inventors: Christopher M. Fetzer, James H. Ermer, Richard R. King, Peter C. Colter
  • Patent number: 9742152
    Abstract: A tunable distributed feedback (DFB) semiconductor laser based on a series mode or a series and parallel hybrid mode. A grating structure of the laser is a sampling Bragg grating based on the reconstruction-equivalent chirp technology. DFB lasers with different operating wavelengths based on the reconstruction-equivalent chirp technology are integrated together by a sampling series combination mode or a series/parallel hybrid mode, one of the lasers is selected to operate via a current, and the operating wavelength of the laser can be controlled by adjusting the current or the temperature, so that the continuous tuning of the operating wavelengths of the lasers can be realized. Various wavelength signals in parallel channels are coupled and then output from the same waveguide. An electrical isolation area (1-11) is adopted between lasers connected in series or lasers connected in series and connected in parallel to reduce the crosstalk between adjacent lasers.
    Type: Grant
    Filed: September 22, 2014
    Date of Patent: August 22, 2017
    Assignee: Nanjing University
    Inventors: Lianyan Li, Song Tang, Xiangfei Chen, Yunshan Zhang, Jun Lu
  • Patent number: 9716364
    Abstract: An optically pumped semiconductor disk laser including a pump light source, at least one semiconductor body (2), which semiconductor body (2) has at least one window region (8), an active region (7) and a reflection device (P), which reflection device has at least one first P-reflection element (P1) for the pump wavelength. The first P-reflection element (P1) is embodied and arranged such that pump light emerging from the pump light source (3) can be guided for at least two passes through the active region (7). A total thickness of the active region (7) and of the window region (8) in the direction of an optical axis of the semiconductor disk laser is less than three times the laser wavelength in the active region (7).
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: July 25, 2017
    Assignee: Fraunhofer•Gesellschaft Zur Förderung der Angewandten Forschung E.V.
    Inventors: Tino Topper, Marcel Rattunde, Sebastian Kaspar, Joachim Wagner