Abstract: The present disclosure generally relates to the field of resistive sensing. In particular, the present disclosure relates to a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite based fast response temperature sensor. Aspects of the present disclosure provide a method for fabrication of a highly sensitive reduced graphene oxide-nickel (RGO—Ni) composite-based temperature sensor. An aspect of the present disclosure provides a temperature sensor comprising: a substrate; and a composite film deposited onto said substrate, wherein the composite film comprises a reduced graphene oxide-nickel composite film. In an embodiment, the temperature sensor is cryo-compatible.

Abstract: A temperature sensor, a processor including the same, and a method of operating the same are provided. The temperature sensor includes: a reference circuit configured to receive a supply voltage provided from outside the processor and utilized by a logic block of the processor for operation of the logic block, and generate, using the supply voltage, at least one temperature information signal that varies according to a temperature of the logic block and at least one reference signal that is substantially constant relative to the temperature of the logic block; and a digital temperature generator configured to receive the at least one temperature information signal and the at least one reference signal generated by the reference circuit, and generate a digital temperature information signal indicative of the temperature of the logic block based on the at least one temperature information signal and the at least one reference signal.

Abstract: A temperature sensor, a processor including the same, and a method of operating the same are provided. The temperature sensor includes: a reference circuit configured to receive a supply voltage provided from outside the processor and utilized by a logic block of the processor for operation of the logic block, and generate, using the supply voltage, at least one temperature information signal that varies according to a temperature of the logic block and at least one reference signal that is substantially constant relative to the temperature of the logic block; and a digital temperature generator configured to receive the at least one temperature information signal and the at least one reference signal generated by the reference circuit, and generate a digital temperature information signal indicative of the temperature of the logic block based on the at least one temperature information signal and the at least one reference signal.

Abstract: Method and apparatus for sustaining process temperature measurement with respect to a lead wire break. A resistance temperature device can include a group of lead wire arms including lead wire arms of a first lead wire type and a second lead wire type. An operation can occur to automatically switch from a first lead wire type configuration to a second lead wire type configuration in the resistance temperature device having the plurality of lead wire arms including the first lead wire type and the second lead wire type, if one or more wire breaks occurs in one or more the lead wire arms.

Abstract: A temperature sensor, a processor including the same, and a method of operating the same are provided. The temperature sensor includes: a reference circuit configured to receive a supply voltage provided from outside the processor and utilized by a logic block of the processor for operation of the logic block, and generate, using the supply voltage, at least one temperature information signal that varies according to a temperature of the logic block and at least one reference signal that is substantially constant relative to the temperature of the logic block; and a digital temperature generator configured to receive the at least one temperature information signal and the at least one reference signal generated by the reference circuit, and generate a digital temperature information signal indicative of the temperature of the logic block based on the at least one temperature information signal and the at least one reference signal.

Abstract: In hybrid electric vehicles having increased battery storage capacity and plug-in capability, electric-only operation of significant duration is available. To supplement lubrication for the electric and mechanical component provided by an engine-driven mechanical pump, an electric pump is provided in parallel to the mechanical pump. A method to control the electric pump is also disclosed in which a first desired quantity of a first component and a second desired quantity of a second component are determined. The electric pump is commanded to provide the greater of the first and second quantities. The desired quantity can be based on preventing temperature in the component from exceeding a maximum design temperature and/or providing sufficient lubrication to rotating parts of the component.

Abstract: A temperature measuring instrument is provided with a testing switch that controls a supply of a first constant current to a first signal line from a first constant current source and a supply of a second constant current to a second signal line from a second constant current source. When a temperature is being measured, the first and second constant currents are supplied respectively to the first and second signal lines. When testing connection statuses of the first signal line, the second signal line and a third signal line, the supply of the first and second constant currents are stopped temporarily, to change a report from a current detecting/reporting portion, provided in a temperature sensor, for detecting and reporting whether or not there is a return current to the temperature measuring instrument from the third signal line.

Abstract: A temperature measurement circuit includes a sensing unit and a temperature translation unit. The sensing unit is arranged for generating a positive temperature coefficient characteristic and a negative temperature coefficient characteristic according to a temperature. The temperature translation unit is coupled to the sensing unit, and is arranged for generating a measured temperature according to the positive temperature coefficient characteristic and the negative temperature coefficient characteristic.

Abstract: A temperature detection device includes a diode and an analog-digital converter. An output voltage signal of the diode is applicable to an input of the analog-digital converter. The temperature detection device is adapted for the purpose of coupling a reference voltage of the analog-digital converter and the diode current of the diode such that effects of variations of the reference voltage or the diode current on the digital output signal of the analog-digital converter are partially or completely suppressed.

Abstract: A temperature sensor includes a resonator; a first oscillation circuit to oscillate the resonator in a first oscillation mode; a second oscillation circuit to oscillate the resonator in a second oscillation mode different from the first oscillation mode; a switching circuit to connect the resonator to the first oscillation circuit or the second oscillation circuit; a control circuit to control the switching circuit so that the first oscillation circuit and the second oscillation circuit are alternately connected to the resonator; and a temperature information output circuit to generate information representing a frequency difference between a signal output from the first oscillation circuit kept in a status of being connected to the resonator and a signal output from the second oscillation circuit kept in the status of being connected to the resonator on the basis of these signals and to output the frequency difference information as temperature information on the resonator.

Abstract: Various embodiments provide systems and methods measuring the temperature of a device using a semiconductor temperature sensor, such as a diode. This invention allows the use of an uncalibrated diode to be used as a temperature sensor by applying a sinusoidally varying forcing current to the diode and measuring the rate of change of the voltage across the diode. Embodiments advantageously provide for a rapid, responsive temperature measuring, substantially eliminating the effect of lead resistance associated with the temperature sensor.

Abstract: A temperature detection system includes a power semiconductor device, a chip temperature detection device for detecting a temperature of the power semiconductor device, loss-related characteristic value acquiring means for acquiring a loss-related characteristic value that is a characteristic to decide a loss of the power semiconductor device, difference value calculating means for calculating, from the loss-related characteristic value, a difference value between the temperature of the power semiconductor device and a temperature detected by the chip temperature detection device, a corrected temperature signal generating part for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection device and the difference value, and an output part for outputting the corrected temperature signal to the outside.

Abstract: A measuring apparatus for an ear thermometer includes a battery, a mode switching circuit and a microcontroller, and the microcontroller, during a run mode or a normal operating state, does not pass battery current to the mode switching circuit in order that the insertion of the mode switching circuit causes no substantial change in power consumption so as to suppress a power consumption of the apparatus and extend the power of the battery.

Abstract: A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.

Abstract: An temperature sensor circuit is disclosed. In one embodiment, the temperature sensor comprises an input circuit with a current mirror for forcing a current down a reference stage and an output stage. The reference stage and the output stage include P-N junctions (e.g., using bipolar transistors) with differing junction potentials. By tailoring the resistances in the reference and output stages, the input circuit produces two output voltages, one of which varies predictably with temperature, and one which is stable with temperature. The input circuit is preferably used in conjunction with an amplifier stage which preferably receives both the temperature-sensitive and non-temperature-sensitive outputs. Through various resistor configurations in the amplifier stage, the output of the temperature sensor can be made to vary at a higher sensitivity than produced by the temperature-sensitive output of the input circuit.

Abstract: Described is a method and apparatus for compensating for a change in an output characteristic of a temperature sensor due to varying temperature. The temperature sensor includes a temperature sensing core, an analog-to-digital converter, a counter, and a temperature compensating circuit. The temperature sensing core generates a sense voltage corresponding to a sensed temperature. The analog-to-digital converter converts the sense voltage into a digital signal and generates a conversion signal. The temperature compensating circuit generates a counter clock signal that varies according to a temperature change. The counter counts the number of pulses of the counter clock signal according to the conversion signal.

Abstract: An apparatus for measuring a temperature of a process fluid includes a resistance based temperature sensor (RTD) sensor configured to thermally couple to the process fluid. First and second electrical connections are configured to apply a current through the RTD. Measurement circuitry is configured to measure a voltage across the RTD and identify a degraded connection to the RTD and responsively measure a temperature of the process fluid using the electrical connections.

Abstract: A fully on-chip temperature, process, and voltage sensor includes a voltage sensor, a process sensor and a temperature sensor. The temperature sensor includes a bias current generator, a ring oscillator, a fixed pulse generator, an AND gate, and a first counter. The bias current generator generates an output current related to temperature according to the operating voltage of chip. The ring oscillator generates an oscillation signal according to the output current. The fixed pulse generator generates a fixed pulse signal. The AND gate is connected to the ring oscillator and the fixed pulse generator for performing a logic AND operation on the oscillation signal and the fixed pulse signal, and generating a temperature sensor signal.

Abstract: A circuit (1-2) for compensating for variations in the current gain ? of a sensing transistor (Q1) having a collector coupled to a reference voltage (GND) includes a first current mirror (20) having an input coupled to a base of the sensing transistor. A second current mirror (21) has an input coupled to an output of the first current mirror. A current source (13) is coupled to provide emitter current for the sensing transistor. An output of the second current mirror circuit (21) feeds base current of the sensing transistor back to its emitter to cause the collector current of the sensing transistor to be precisely equal to the current (I1) provided by the current source.

Abstract: A temperature sensor circuit includes a band-gap reference voltage circuit. The resistor and diode-connected bipolar transistor of the band-gap reference voltage circuit are separated into a transistor-resistor series circuit and a transistor-diode series circuit. The transistor-resistor series circuit is configured such that an emitter of the bipolar transistor Q21 is connected to a power supply voltage terminal VCC, a collector thereof is grounded via the resistor R2. The transistor-diode series circuit is configured such that an emitter of the bipolar transistor Q20 is connected to the power supply voltage terminal VCC, a collector thereof is connected to a collector of the diode-connected bipolar transistor Q19, and an emitter of the diode-connected bipolar transistor is grounded. A voltage divider circuit 5 having a plurality of output terminals is connected to the transistor-resistor series circuit and the transistor-diode series circuit via first and second buffer circuits 3 and 4, respectively.

Abstract: Temperature detection circuitry is selectively coupled to a thermistor and one of two sources representing the impedance at respective ends of the expected range of temperature to which the thermistor is to be exposed. The offset of an amplifier and a scale factor to account for gain set of the amplifier are determined in an automatic calibration process while coupled to the source(s), and thereafter temperature readings are taken from the thermistor. During the calibration process, if the gain or scale factor are outside of expected ranges, a failure is determined and an alarm given and/or a heater is disabled.

Abstract: An electronic thermometer is configured for selectable predictive modes based upon the same predictive algorithm. A mode selector is adapted for user selection between several modes of operation of the thermometer. Each mode of operation utilizes the same predictive algorithm for estimating the temperature of the subject before the thermometer reaches full equilibrium. Different modes offer users a selection for striking the appropriate balance between response time and precision, based upon user preferences and needs.

Abstract: A system and method for compensating for thermal drift. A temperature is measured in a meter as a temperature voltage. The temperature voltage is converted to a digital signal. The digital signal is processed to generate an offset voltage in response to the digital signal. The offset voltage is applied as an input to an amplifier. The amplifier receives as a second input a gauge voltage. An output is generated from the meter that corrects the gauge voltage using the offset voltage to compensate for thermal drift.

Abstract: The radiometric thermometer includes a microwave sensor and electronic means for processing the electrical signal delivered by the sensor. The electronic means includes means for preamplifying the electrical signal delivered by the microwave sensor; variable-gain amplification means with automatic gain control, which means amplify the signal delivered by the preamplification means, the amplification means having an automatic gain control signal that allows the gain to be automatically adjusted on the basis of the signal output by the amplification means, and electronic temperature measurement means for measuring temperature on the basis of the automatic gain control signal.

Abstract: In a temperature sensor circuit, a temperature sensor is configured to output a first voltage corresponding to temperature. A voltage source is configured to output a second voltage having the same nonlinear dependence on the temperature as a nonlinear dependence of the first voltage on the temperature. An amplifier is configured to amplify the second voltage with a first amplification factor to output a third voltage. An inversion amplifier is configured to perform inversion amplification on a difference between the first voltage and the third voltage with a second amplification factor to output a fourth voltage.

Abstract: A system comprises a temperature sensor generate multiple base-emitter voltage signals by sequentially providing various currents to a transistor, and a system controller to determine a differential voltage signal according to the multiple base-emitter voltage signals, the differential voltage signal proportional to an environmental temperature associated with the transistor.

Abstract: A power semiconductor module with temperature measurement is disclosed. One embodiment provides a conductor having a first end and a second end. The second end is thermally coupled at a substrate. A device including temperature sensor is thermally coupled at the first end and configured to determine a temperature at the second end using the temperature sensor.

Abstract: An electronic pacifier thermometer is provided. The electronic pacifier thermometer is composed of a pacifier device and a measurement device. The pacifier device has a built-in temperature sensing element (e.g., a temperature sensor) and a connector element. The measurement device contains a display, a circuit board mainly which is controlled by an integrated circuit, and a cable element. The circuit board contains an incomplete temperature measurement circuit that would be made complete through connection to the temperature sensing element. The temperature measurement circuit has a reference resistor (could also be installed inside the pacifier device) whose resistance difference is relative to the temperature sensing element in the pacifier device which is linearly corresponds to the temperature difference between the measured temperature and a pre-determined temperature value.

Abstract: Temperature detection for a semiconductor component is disclosed. One embodiment includes a circuit arrangement for measuring a junction temperature of a semiconductor component that has a gate electrode and a control terminal being connected to the gate electrode and receiving a control signal for charging and discharging the gate electrode, where the gate electrode is internally connected to the control terminal via an internal gate resistor. The circuit arrangement includes: a measuring bridge circuit including the internal gate resistor and providing a measuring voltage which is dependent on the temperature dependent resistance of the internal gate resistor; an evaluation circuit receiving the measuring voltage and providing an output signal dependent on the junction temperature; a pulse generator providing a pulse signal including pulses for partially charging or discharging the gate electrode via the internal gate resistor.

Abstract: A method and apparatus for determining an operating voltage lower bound for preventing photovoltaic (PV) cell reverse breakdown during power conversion. The method comprises determining a PV cell operating temperature; computing, at a controller, an operating voltage corresponding to a maximum power point (MPP) based on the PV cell operating temperature; and determining, at the controller, an operating voltage lower bound based on the operating voltage.

Abstract: A temperature sensor comprises a pulse signal generating unit for generating a first pulse signal having an enable section, a width of which is adjusted according to a reference voltage having a temperature characteristic, an oscillator for generating a second pulse signal of a predetermined period in the enable section of the first pulse signal, and a counter for performing a counting operation in response to the second pulse signal and generating at least one temperature signal.

Abstract: A temperature sensor, in accordance with the principles of the invention comprises a silicon substrate. The silicon substrate includes a bandgap, an offset circuit for providing calibration offsets, and a gain block for providing an output that varies substantially linearly with changes in temperature of the substrate.

Abstract: The radiometric thermometer includes a microwave sensor and electronic means for processing the electrical signal delivered by the sensor. The electronic means includes means for preamplifying the electrical signal delivered by the microwave sensor; variable-gain amplification means with automatic gain control, which means amplify the signal delivered by the preamplification means, the amplification means having an automatic gain control signal that allows the gain to be automatically adjusted on the basis of the signal output by the amplification means, and electronic temperature measurement means for measuring temperature on the basis of the automatic gain control signal.

Abstract: A method for calibrating a digital temperature sensor circuit, the circuit comprising an analogue temperature sensing means, an internal reference voltage source and an analogue-to-digital converter (ADC). The ADC is arranged to receive respective signals from the analogue temperature sensing means and the reference voltage source and output a digital signal indicative of the ambient temperature. The method comprises the steps of determining the value of the internal reference voltage outputted by the reference voltage source, comparing it with the desired reference voltage value, and adjusting the reference voltage source in response to the result of the comparison step. Such an electrical voltage mode calibration can significantly reduce production costs, as it can be performed much faster than a traditional thermal calibration. The method can be applied to a sensor that produces a PTAT voltage that has to be compared to a temperature-independent bandgap reference voltage.

Abstract: An on-chip temperature sensor for an integrated circuit includes in one embodiment a voltage/current source circuit that provides a reference voltage and a current. A sense signal circuit receives the current of the voltage/current source circuit and provides a sense signal corresponding to the temperature of the integrated circuit. A reference signal receives the reference voltage of the voltage/current source circuit and provides a reference signal having a selectable value. A comparator compares the sense signal of the sense signal circuit to the selectable reference signal of the reference signal circuit and provides a temperature sensor output signal.

Abstract: A temperature detection system includes a power semiconductor device, a chip temperature detection device for detecting a temperature of the power semiconductor device, loss-related characteristic value acquiring means for acquiring a loss-related characteristic value that is a characteristic to decide a loss of the power semiconductor device, difference value calculating means for calculating, from the loss-related characteristic value, a difference value between the temperature of the power semiconductor device and a temperature detected by the chip temperature detection device, a corrected temperature signal generating part for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection device and the difference value, and an output part for outputting the corrected temperature signal to the outside.

Abstract: The invention concerns an arrangement on a semiconductor chip for calibrating temperature setting curve having a signal generation unit (2) for providing a first signal (Iptat1, Vptat1, fptat1), which is proportional to the actual uncalibrated temperature T1 of the chip. To avoid bringing the chip on a second temperature it is proposed to read a first signal (Iptat1, Vptat1, fptat1), which is proportional to the actual uncalibrated temperature T1 of the chip and generate a signal offset (Ivirt, Vvirt, fvirt), which is combined with the first signal (Iptat1, Vptat1, fptat1) defining a second signal (Iptat2, Vptat2, fptat2) and to extract a first actual temperature T1 from the first signal (Iptat1, Vptat1, fptat1) and a second uncalibrated temperature T2 from the second signal (Iptat2, Vptat2, fptat2).

Abstract: A temperature sensor comprises a pulse signal generating unit for generating a first pulse signal having an enable section, a width of which is adjusted according to a reference voltage having a temperature characteristic, an oscillator for generating a second pulse signal of a predetermined period in the enable section of the first pulse signal, and a counter for performing a counting operation in response to the second pulse signal and generating at least one temperature signal.

Abstract: A low power analog linear temperature sensor integrateable with digital and/or analog circuits in CMOS fabrication processes. The sensor is accurately calibrateable at a single temperature that yields a linear relationship between measured differential voltage and temperature over a wide variety of temperature ranges. The sensor provides stable voltage and current references that are essential for wireless sensor platforms. There are many applications where sensors require stable voltage/current references and the physics of the sensor's transduction mechanisms are themselves temperature dependent. Wireless platforms such as, but not limited to, passive RFID tags with the addition of on- or off-chip sensors provide a low cost solution for a variety of low cost sensor applications.

Abstract: Systems and methods for reducing the complexity and size of thermal sensors, where the voltage of a thermally sensitive device is compared to a reference voltage that varies as a function of temperature, rather than being constant. One embodiment comprises a thermal sensing system including a reference voltage generator, a thermal sensor and a comparator. The reference voltage generator is configured to generate a non-constant reference voltage that varies as a known function of temperature. The thermal sensor is configured to generate a sensor voltage that also varies as a known function of temperature. The functions of the reference and sensor voltages cross at a known temperature/voltage. The comparator is configured to compare the sensor voltage and the reference voltage and to generate a comparison output signal based on the comparison of the sensor voltage and the first reference voltage. A transition in this signal indicates the reference temperature.

Abstract: A body temperature detector is particularly suited to axillary temperature measurements of adults. The radiation sensor views a target surface area of the body and electronics compute an internal temperature of the body as a function of ambient temperature and sensed surface temperature. The function includes a weighted difference of surface temperature and ambient temperature, the weighting being varied with target temperature to account for varying perfusion rate. Preferably, the coefficient varies from a normal of about 0.13 through a range to include 0.09. The ambient temperature used in the function is assumed at about 80° F. but modified with detector temperature weighted by 20%.

Abstract: A digital temperature sensing device uses temperature depending characteristic of contact resistance of a MOS transistor and a self-refresh driving device adjusts its self-refresh period depending on temperature using the digital temperature sensing device. The self-refresh driving device includes a first reference voltage generating unit for generating a reference voltage robust to temperature, the first reference voltage generating means being formed with a plurality of MOS transistors, the number of source contacts of the MOS transistors being adjusted such that variation of saturation current through source-drain is compensated for; a second reference voltage generating unit for generating a second reference voltage sensitive to temperature; a level comparator for comparing the first reference voltage with the second reference voltage; and an oscillator for generating a clock signals having differing period depending on the output signal of the level comparator.

Abstract: A circuit for temperature sensing provides a bias current to a PN junction, and the PN junction provides a PN junction voltage in response to the bias current. Also, a parasitic resistance may be coupled in series with the PN junction. The circuit for temperature sensing is configured to determine the temperature of the PN junction based on the PN junction voltage. Further, the circuit includes registers which store ?trim, which is based on the difference between the non-ideality of the PN junction used from a reference PN junction; ?I, which is based on the difference between a reference bias current and the bias current for the part; Rtrim, which is based the parasitic resistance; and Ntrim, which includes other offsets. The registers may be set during trimming and/or calibration to provide accurate temperature sensing for the parameters employed.

Abstract: A temperature measurement device may be implemented by coupling a PN-junction, which may be comprised in a diode, to an analog-to-digital converter (ADC) that comprises an integrator. Different currents may be successively applied to the diode, resulting in different VBE values across the diode. The ?VBE values thus obtained may be successively integrated. Appropriate values for the different currents may be determined based on a set of mathematical equations, each equation relating the VBE value to the temperature of the diode, the current applied to the diode and parasitic series resistance associated with the diode. When the current sources with the appropriate values are sequentially applied to the diode and the resulting diode voltage differences are integrated by the integrator comprised in the ADC, the error in the temperature measurement caused by series resistance is canceled in the ADC, and an accurate temperature reading of the diode is obtained from the output of the ADC.

Abstract: A thermoelectric connector module (C) is disclosed which comprises input (2) and output (1E) connectors and contains signal conditioning circuitry (1C). The input connectors (2) are interfaced with a hand-held detector (7), and the output connectors (1E) are connected to signal-utilising apparatus (11). The module does not contain a battery but receives its power supply for the conditioning circuitry from the signal-utilising apparatus supplied via the output connectors (1E). In this way, the module may be miniaturised, making it particularly suitable for mounting directly on a hand-held temperature detector or probe. Since the connector does not have to be opened for a battery replacement, it can be permanently hermetically sealed, providing resistance to dirt, dust, moisture, water and the like.

Abstract: A method in which thermal mass and manufacturing differences are compensated for in thermometry probes by storing characteristic data relating to individual probes into an EEPROM for each probe which is used by the temperature apparatus.

Abstract: A temperature sensor with a plurality of temperature sense points based on a bandgap reference circuit providing negative temperature coefficient reference voltages and a positive temperature coefficient reference voltage. All negative temperature coefficient reference voltages have the same slope and the same spacing from each other. The intercept points between the negative temperature coefficient reference voltages and the positive temperature coefficient reference voltage determine the temperature sense points. Efficient calibration of the spacing of the temperature sense points is provided by a tap on a programmable resistor in the positive temperature coefficient reference circuit. Efficient calibration of the absolute temperature is provided by second programmable resistors in a circuit driven by two current sources. The calibration of one temperature point equally applies to all other second programmable resistors.

Abstract: A temperature sensor is comprised of a device adapted to provide a first signal having a parameter responsive to temperature. A generator provides a reference signal having a parameter that is substantially consistent over a preselected temperature range. A comparator is electrically coupled to the device and the generator and is adapted to provide a second signal in response to the parameter of the first signal differing from the parameter of the reference signal. A digital filter is coupled to the comparator and is adapted to provide a third signal in response to receiving the second signal for a preselected duration of time.

Abstract: Method and system for periodically measuring the junction temperature of a semiconductor device. The junction is excited by at least two sequential predetermined currents of different magnitudes. The voltage response of the junction to the at least two currents is measured and the temperature of the junction is calculated, while substantially canceling ohmic effects, by using the voltage response and a correction factor. Whenever desired, the junction is excited by a set of at least four sequential different currents having known ratios. The voltage response to the set is measured and the correction factor is calculated by using each voltage response to the set.

Abstract: A slope correction signal setting unit is configured to output selectively one of a plurality of direct current signals according to the sensed temperature parameter signal. Levels of the plurality of direct current signals are determined to correspond to the predetermined temperature dependent characteristic of the sensor signal. An analog amplifying circuit is connected to the slope correction signal setting unit and configured to amplify the outputted direct current signal according to the sensed temperature parameter signal. An analog arithmetic circuit is connected to the analog amplifying circuit and configured to carry out a predetermined arithmetic operation based on the amplified direct current signal and the sensor signal.