Abstract: A wireless communication system includes a transmitter configured to transmit at least first and second radio waves having respective different frequencies F1 and F2, an electrically conductive first passive substantially linear medium, an electrically conductive first passive substantially nonlinear medium disposed proximate the first passive substantially linear medium, and a first magnetic film covering at least a portion of the first passive substantially linear medium. When the transmitter transmits the first and second radio waves, the first passive substantially linear and nonlinear media receive the first and second radio waves and generate first and second signals propagating therein at the respective frequencies F1 and F2. At least one intermodulation signal having a frequency F3 equal to nF1+mF2, where m and n positive or negative integers, is generated in the first passive substantially nonlinear medium. The first magnetic film reduces the at least one intermodulation signal by at least 2 dB.

Abstract: A traveling wave superconducting parametric amplifier is provided. The traveling wave superconducting parametric amplifier includes a chain of superconducting elements having a nonlinear kinetic inductance connected in series, said superconducting elements being deposited on a substrate. The traveling wave superconducting parametric amplifier also includes a dielectric layer of sub-micrometer thickness deposited on the substrate and covering said superconducting elements, and a conductive layer forming a ground plane deposited on top of the dielectric layer, the superconducting elements and the ground plane forming a microstrip-type transmission line. A method for producing such a traveling wave parametric amplifier is also provided.

Abstract: A photon-number-resolving detector comprises a detection element, an ohmmeter, and a hardware logic component. The detection element can be formed from a Weyl or Dirac semimetal. Electrons of the detection element are characterized by a surface state that exhibits a Dirac cone and a bulk superconducting state that exhibits a bandgap. When photons having energies less than the bandgap of the bulk superconducting state impinges on the detection element, the photons can be absorbed by electrons of the detection element that are characterized by the surface state. The ohmmeter outputs resistance data indicative of an electrical resistance of the detection element while the photons impinge on the detection element. The hardware logic component can determine, based upon the resistance data, a number of the photons that are absorbed by the surface state electrons of the detection element.

Abstract: The various embodiments described herein include methods, devices, and systems for operating superconducting circuits. In one aspect, an electric circuit includes: (1) a superconductor component having a first terminal at a first end and a second terminal at a second end; (2) a gate component thermally-coupled to the superconductor component at a first location between the first terminal and the second terminal, where the gate component is thermally-coupled via a first section of the gate component; and where the gate component has a smallest width at the first section so as to focus resistive heating toward the superconductor component.

Abstract: An electronic article surveillance tag including a tag body member and a connecting member having a pin portion releasably engageable with the tag body member, wherein the pin portion extends along a first axis. The tag further includes a locking member having a clutch mechanism including a plunger member formed from a non-ferromagnetic material and an unlocking member connected to the clutch mechanism. The unlocking member is moveable along a second axis perpendicular to the first axis between a locked position and an unlocked position, wherein during movement between the locked position and the unlocked position, the unlocking member moves the clutch mechanism between the first position corresponding to the locked state and the second position corresponding to the unlocked state.

Abstract: An antenna comprising; a substrate; a continuous film of yttrium barium copper oxide (YBCO) disposed on the substrate having first and second regions, wherein the first region has a first oxygen doping level and wherein the second region has a second oxygen doping level that is different from the first oxygen doping level; a nano-scale conductive structure, shaped to resonate at a terahertz (THz) frequency, disposed on a boundary between the first and second regions; and a conductive path electrically connected to the first and second regions and to the conductive structure such that induced current in the structure due to incoming THz radiation heats the boundary thereby creating a thermal gradient, which results in the generation of Seebeck effect voltage.

Abstract: A particle detector according to one embodiment includes: superconductive lines, conductive lines, insulating films, a first detection circuit, and a second detection circuit. The superconductive lines extend in a first direction and are arranged in a second direction intersecting the first direction. The conductive lines extend in a third direction different from the first direction and are arranged in a fourth direction intersecting the third direction. The insulating films are each interposed at an intersection point between one of the superconductive lines and one of the conductive lines. The first detection circuit detects a voltage change occurring in the superconductive lines. The second detection circuit detects a current or a voltage generated in the conductive lines when the voltage change occurs.

Abstract: A temperature sensing circuit adapted for a memory device and including an oscillator, a count circuit, a control circuit, a sense circuit and a select circuit is provided. The oscillator provides an oscillation signal. The count circuit counts the oscillation signal to generate a first count signal, and generates a second count signal. The count circuit performs a logic operation on the second count signal to generate an enable signal and a sensing adjustment signal. The sense circuit generates a reference temperature voltage by dividing a reference voltage according to the sensing adjustment signal, and compares the reference temperature voltage and a monitor voltage according to the enable signal to generate a determination signal.

Abstract: A temperature sensor for a battery cell of a rechargeable battery is described, and includes a resistive sensing element, a first electrode, and a second electrode. The resistive sensing element, the first electrode, and the second electrode are affixed to a porous separator. The porous separator is interposed between an anode and a cathode of the battery cell. The resistive sensing element is electrically connected in series between the first electrode and the second electrode, and the resistive sensing element, the first electrode and the second electrode are affixed onto the separator as film layers, and are porous.

Abstract: A temperature conditioning unit includes a first temperature conditioning unit part, a second temperature conditioning unit part, and a blower (centrifugal blower). The first temperature conditioning unit part includes a first housing, a first air hole part, a first air chamber, a first object to be temperature-conditioned, and a second air chamber. The second temperature conditioning unit part includes a second housing, a second object to be temperature-conditioned, a second air hole part, and a third air chamber.

Abstract: A system and method to convert a wideband optical signal to a multi-bit digital electrical signal using a superconducting integrated circuit. In a preferred embodiment, the optical signal modulates the phase (i.e., adjusts the timing) of a sequence of single-flux-quantum voltage pulses. The optoelectronic modulator may comprise an optically tunable Josephson junction, superconducting inductor, or bolometric detector, with switching speeds approaching 100 ps or less. The optical signal may comprise a plurality of optical signals such as a wavelength-division multiplexed signal. The optical-to-digital converter may be applied to high-speed digital communication switches, broadband digital input/output for superconducting or quantum computing, and control/readout of detector arrays.

Abstract: A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

Abstract: One-time, single-use sensor elements (22, 46) are provided for detecting the occurrence of predetermined conditions such as temperature and elapsed time-temperature. The sensor elements (22, 46) preferably comprise elongated, glass-coated, metal alloy, amorphous or nanocrystalline microwires (30, 48), which can be placed in a position to detect the predetermined condition of interest. An alternating magnetic field detector (28) may be used to continuously or periodically interrogate the sensor elements (22, 46) to determine if the predetermined condition has occurred. In one aspect of the invention, the microwires (30, 48) experience a change in configuration upon the occurrence of the predetermined condition, and have correspondingly different induced remagnetization responses.

Abstract: An apparatus including a temperature-sensing circuit. The temperature-sensing circuit can include an amplifier. The amplifier can include a positive input and a negative input. The negative input can be configured to be driven by a temperature-independent signal. A first transistor electrically can be connected to the positive input. The first transistor can be configured to be controlled by a temperature signal. A temperature threshold resistance and a hysteresis resistance can be electrically connected in series to the positive input. A second transistor can be electrically connected in parallel with the hysteresis resistance.

Abstract: A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

Abstract: The temperature sensors (26,64,96) preferably include a plurality of individual, magnetically susceptible temperature sensor elements (28-34,66,92), as well as optional magnetic field-responsive data elements (38,40,20) adapted for attachment to object (44) or to a substrate (82) in turn attached to object (44). The temperature sensor elements (28-34,66,92) preferably have magnetic bodies (22,70) exhibiting a re-magnetization response under the influence of an applied alternating magnetic field, which is different below and above a set point temperature, normally the Curie temperature of the magnetic body (22) or an adjacent sheath (74,94).

Abstract: There is provided a semiconductor device which can maintain a high tuning accuracy while suppressing a cost increase and suppress an increase in the time required for tuning. There are included, in addition to variable resistors configuring a level shift circuit, an additional resistor coupled between the output node of a VBGR voltage of a BGR circuit and one of the variable resistors and an additional resistor coupled between the other of the variable resistors and a reference voltage. N-channel MOS transistors are coupled in parallel with the additional resistors, respectively.

Abstract: A device and method of remote temperature sensing, the device having a temperature sensor placeable on a rotating item utilizing the temperature sensor being a plurality of rectangular shaped amorphous magnetic alloy strips connected magnetically, wherein at least one of the strips has a predetermined ferromagnetic Curie temperature and another strip has a magnetic permeability exceeding 2,000.

Abstract: A sensor arrangement includes, in some embodiments, a magnetostrictive element configured to output magnetic signals in response to a magnetic field. A sensor is configured to sense a value of a property of a selected object, and to provide an electrical resistance that varies in response to variations in the sensed value. The sensor cooperates with the magnetostrictive element to vary the frequency of the signals output by the magnetostrictive element based on variations of the electrical resistance provided by the sensor. A transmitter provides an alternating magnetic field to the magnetostrictive element, and a receiver picks up the magnetic signals generated by the magnetostrictive element. The frequency of the signals received is correlated with the sensor resistance, and the resistance is correlated to a value of the property sensed.

Abstract: A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

Abstract: A temperature sensor includes a plurality of rectangular shaped amorphous magnetic alloy strips connected magnetically, wherein at least one of the strips has a predetermined ferromagnetic Curie temperature, and another strip has a magnetic permeability well exceeding 2,000. The temperature sensor may be used in a related remote temperature sensing method wherein the sensor is interrogated by a magnetic field and the temperature sensor's response signal is detected electromagnetically.

Abstract: To provide a heat detector in which thermal responsiveness of a heat detecting unit such as a ceramic element is improved. A heat detector 1 includes a ceramic element 10 accommodated in a sensing-device main body, and measures a temperature in a monitoring area based on a dielectric constant of the ceramic element 10. The Curie point temperature of the ceramic element 10 is set in a predetermined sensitive temperature range.

Abstract: A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

Abstract: The temperature sensors (26,64,96) preferably include a plurality of individual, magnetically susceptible temperature sensor elements (28-34,66,92), as well as optional magnetic field-responsive data elements (38,40,20) adapted for attachment to object (44) or to a substrate (82) in turn attached to object (44). The temperature sensor elements (28-34,66,92) preferably have magnetic bodies (22,70) exhibiting a re-magnetization response under the influence of an applied alternating magnetic field, which is different below and above a set point temperature, normally the Curie temperature of the magnetic body (22) or an adjacent sheath (74,94).

Abstract: Small, low-cost wireless temperature sensors (26,64,96) are provided for sensing the temperature of an object (44). The temperature sensors (26,64,96) preferably include a plurality of individual, magnetically susceptible temperature sensor elements (28-34,66,92), as well as optional magnetic field-responsive data elements (38,40,20) adapted for attachment to object (44) or to a substrate (82) in turn attached to object (44). The temperature sensor elements (28-34,66,92) preferably have magnetic bodies (22,70) exhibiting a re-magnetization response under the influence of an applied alternating magnetic field, which is different below and above a set point temperature, normally the Curie temperature of the magnetic body (22) or an adjacent sheath (74,94).

Abstract: A superconducting radiometry apparatus has a micro-calorie meter that detects an energy of a radiant ray as a temperature change. A signal detection mechanism detects an electric current flowing to the micro-calorie meter. A heat addition device adds a quantity of heat to the micro-calorie meter. A peak value monitor measures, in synchronization with the addition of the quantity of heat to the micro-calorie meter, a peak value of an output voltage corresponding to an output signal from the signal detection mechanism. An energy correction device corrects, on the basis of an output from the peak value monitor, an energy value so as to become a peak value corresponding to the quantity of heat added to the micro-calorie meter.

Abstract: A device and a method of thermal management. In one embodiment, the device includes an integrated circuit, including: (1) a conductive region configured to be connected to a voltage source, (2) a transistor having a semiconductor channel with a controllable conductivity and (3) first and second conducting leads connecting to respective first and second ends of said channel, wherein a charge in the conductive region is configured to substantially raise an electrical potential energy of conduction charge carriers in the semiconductor channel and portions of said leads are located where an electric field produced by said charge is substantially weaker than near the semiconductor channel.

Abstract: A sensor arrangement includes, in some embodiments, a magnetostrictive element configured to output magnetic signals in response to a magnetic field. A sensor is configured to sense a value of a property of a selected object, and to provide an electrical resistance that varies in response to variations in the sensed value. The sensor cooperates with the magnetostrictive element to vary the frequency of the signals output by the magnetostrictive element based on variations of the electrical resistance provided by the sensor. A transmitter provides an alternating magnetic field to the magnetostrictive element, and a receiver picks up the magnetic signals generated by the magnetostrictive element. The frequency of the signals received is correlated with the sensor resistance, and the resistance is correlated to a value of the property sensed.

Abstract: A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, a word line low voltage, or the like. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

Abstract: A sensor arrangement includes, in some embodiments, a magnetostrictive element configured to output magnetic signals in response to a magnetic field. A sensor is configured to sense a value of a property of a selected object, and to provide an electrical resistance that varies in response to variations in the sensed value. The sensor cooperates with the magnetostrictive element to vary the frequency of the signals output by the magnetostrictive element based on variations of the electrical resistance provided by the sensor. A transmitter provides an alternating magnetic field to the magnetostrictive element, and a receiver picks up the magnetic signals generated by the magnetostrictive element. The frequency of the signals received is correlated with the sensor resistance, and the resistance is correlated to a value of the property sensed.

Abstract: A sensor comprises a reference sample arranged to be subject to at least one variable physical parameter such that a variation in the value of the at least one variable physical parameter causes a change in the magnetisation of the reference sample, means for measuring the magnetisation of the reference sample, and means for determining in dependence upon the measured magnetisation whether there has been a variation in the value of the at least one variable physical parameter, wherein the reference sample comprises a Heusler alloy.

Abstract: The invention relates to a culinary article (100) having a bottom (101) in which heat-sensitive means (130) made of electrically conductive materials are placed. According to the invention, the heat-sensitive means (130) are made of non-ferromagnetic materials having a temperature-variable resistivity (p).

Abstract: A device for contactless measurement of a rotor temperature includes a magnet supported on the rotor, electric coils which are arranged at the stator with which the rotor cooperates, and an electronic unit for measuring a voltage induced in the coil and including a component that converts the measured voltage into a temperature-proportional signal.

Abstract: There is provided a semiconductor device which can maintain a high tuning accuracy while suppressing a cost increase and suppress an increase in the time required for tuning. There are included, in addition to variable resistors configuring a level shift circuit, an additional resistor coupled between the output node of a VBGR voltage of a BGR circuit and one of the variable resistors and an additional resistor coupled between the other of the variable resistors and a reference voltage. N-channel MOS transistors are coupled in parallel with the additional resistors, respectively.

Abstract: In a temperature-recording method for recording a temperature by means of an electrical circuit of a data storage medium, which electrical circuit is suppliable with energy by means of a signal feedable to the data storage medium, provision is made for a physical variable dependent on the temperature to be recorded by means of the circuit supplied with energy, the physical variable being influenced by a temperature-recording material (1, 7), preferably a piezoelectric or ferroelectric material, co-operating with the circuit, which material comprises alignable electric or magnetic elementary dipoles (3), and for which temperature-recording material (1, 7) a Curie temperature is known, exceeding of which causes the alignment of the elementary dipoles to be lost, and the temperature-recording material (1, 7) being selected in such a way that its known Curie temperature corresponds to a pre-determined limit temperature.

Abstract: A device and method of remote temperature sensing, the device having a temperature sensor placeable on a rotating item utilizing the temperature sensor being a plurality of rectangular shaped amorphous magnetic alloy strips connected magnetically, wherein at least one of the strips has a predetermined ferromagnetic Curie temperature and another strip has a magnetic permeability exceeding 2,000.

Abstract: A temperature sensor device and method of sensing temperature are disclosed. The device and method include generating a reference voltage inversely correlated to the temperature, generating a plurality of analysis voltages correlated to the temperature using a reference current, comparing the reference voltage to each of the plurality of analysis voltages, and generating a temperature estimate based on the comparison. The device and method may also include a method to selectively bypass various resistors in a resistor stack used to generate the various analysis voltages. Another embodiment of the present invention comprises a semiconductor device including at least one temperature sensor according to the invention described herein. The temperature sensor and method of sensing temperature may be incorporated into a semiconductor device, which may be fabricated on a semiconductor wafer and included in an electronic system.

Abstract: A method of generating a temperature measurement for a batch or a continuous stream of material. The method includes providing a particle having a signal that changes at a pre-determined temperature; inserting the particle into the batch or continuous stream; and detecting a signal change from the particle to thereby generate a temperature measurement for the batch or continuous stream. A suitable system for use in carrying out the method is also described.

Abstract: A temperature sensor is comprised of a device adapted to provide a first signal having a parameter responsive to temperature. A generator provides a reference signal having a parameter that is substantially consistent over a preselected temperature range. A comparator is electrically coupled to the device and the generator and is adapted to provide a second signal in response to the parameter of the first signal differing from the parameter of the reference signal. A digital filter is coupled to the comparator and is adapted to provide a third signal in response to receiving the second signal for a preselected duration of time.

Abstract: Methods, Systems, and Devices for Evaluation of Thermal Treatment. A magnetically detectable particle and related methods, systems, and devices are provided for generating a temperature measurement for a batch or a continuous stream of material. The particle can include a first and second magnet each comprising a positive and negative pole. The particle can also include an adhesive having a release temperature and operable to attach one or both of the positive and negative poles of the first magnet proximate to the same polarity pole of the second magnet or to attach one of the positive and negative poles of the first magnet between the poles of the second magnet below the release temperature such that a first magnetic field is generated by the first and second magnet. The adhesive can also be operable to release the first and second magnets from one another above the release temperature.

Abstract: A temperature sensor device and method of sensing temperature are disclosed. The device and method include generating a reference voltage inversely correlated to the temperature, generating a plurality of analysis voltages correlated to the temperature using a reference current, comparing the reference voltage to each of the plurality of analysis voltages, and generating a temperature estimate based on the comparison. The device and method may also include a method to selectively bypass various resistors in a resistor stack used to generate the various analysis voltages. Another embodiment of the present invention comprises a semiconductor device including at least one temperature sensor according to the invention described herein. The temperature sensor and method of sensing temperature may be incorporated into a semiconductor device, which may be fabricated on a semiconductor wafer and included in an electronic system.

Abstract: The invention provides a set of standards for accurately calibrating a vacuum thermogravimetric analyzer (VTGA). The invention solves the problem of calibrating a VTGA by using the actual magnetic transitions and associated transition temperatures, or Curie temperatures, TC's, of a set of standards which can be used in-situ at the location of the sample holder obviating the difficulties associated with indirect methods of calibration. The set of standards permits accurate calibration through sufficiently numerous calibration points over a rather limited low-temperature range for determining vapor pressures of compounds. The set of temperature calibration standards is fabricated from slugs of ferromagnetic material. The composition of the ferromagnetic material in each slug is altered by alloying a ferromagnetic constituent with a non-ferromagnetic constituent to provide a plurality of standards with different Curie temperature over the limited temperature range.

Abstract: A method of generating a temperature measurement for a batch or a continuous stream of material. The method includes providing a particle having a signal that changes at a pre-determined temperature; inserting the particle into the batch or continuous stream; and detecting a signal change from the particle to thereby generate a temperature measurement for the batch or continuous stream. A suitable system for use in carrying out the method is also described.

Abstract: A radiation detector comprises an energy/electricity converter having a detection area for detecting incident radiation, and electrodes connecting the converter to an external driving circuit for driving the converter to convert energy of the incident radiation detected by the detection area of the converter into an electric signal. A collimator is integrally connected to the converter and has an opening for transmitting radiation to irradiate the detection area of the converter and portions for preventing radiation from irradiating a part of the converter other than the detection area. A spacer is integrally connected to the collimator and the converter for maintaining a preselected distance between the collimator and the detection area of the converter.

Abstract: A superconducting radiation detector relies upon the abruptness of a superconducting transition edge to converts a slight heat generated by an X-ray into a high signal current and uses an electrothermal self-feedback mechanism to provide a high energy resolution and a high counting rate. A calorimeter incorporating such a radiation detector has an absorber for absorbing X-rays, a resistor formed of a superconductor provided under the absorber and having a resistance value that varies with heat generated in the absorber, superconducting wires for connecting the resistor to an external current detector, a membrane on which the resistor is provided, and an insulating film provided between the resistor and the absorber and having at least one hole penetrating therethrough, the resistor and the absorber being in contact through the hole.

Abstract: The invention provides a method for accurately calibrating a vacuum thermogravimetric analyzer (VTGA). The invention solves the problem of calibrating a VTGA by using the actual magnetic transitions and associated transition temperatures, or Curie temperatures, Tc's, of a set of standards which can be used in-situ at the location of the sample holder obviating the difficulties associated with indirect methods of calibration. The invention encompasses a method of using a set of calibration standards comprised of a plurality of ferromagnetic slugs to provide a temperature calibration for a VTGA. The method permits accurate calibration through sufficiently numerous calibration points over a rather limited low-temperature range for determining vapor pressures of compounds. Through the use of these standards, highly accurate measurements can be made of the vapor pressures of critical hard disk drive compounds, such as lubricants, and corrosion inhibitors, that are crucial to competitive disk drive technology.

Abstract: A bolometer thin film having a high temperature coefficient of resistance (|TCR|) is produced in a simple and easy production process to provide a highly sensitive infrared sensing element. The invention provides a bolometer using a thin film of an oxide represented by ZyCuOx, wherein Z is one or more alkaline earth metals, one or more rare earth element selected from yttrium and lanthanide elements, one or more elements belonging to Period 5 or Period 6 of the Periodic Table selected from bismuth, lead, thallium, mercury, and cadmium, or potassium or sodium, y is a number satisfying 0≦y≦2, and x is a number satisfying 0.5y<x≦1.5+2y. The bolometer has a temperature coefficient of resistance (|TCR|) higher than that of conventional bolometers.

Abstract: A current probe transformer temperature monitoring method determines an initial transformer temperature of the current probe as a function of the winding resistance of the transformer. A relative temperature of the Hall Effect device is also determined as a function of resistance change of the Hall Effect device. The initial transformer temperature and the relative Hall Effect device temperature are combined to produce a continuous transformer temperature indicative of the temperature of the transformer. The current signal to the multi-turn winding is removed when the continuous transformer temperature exceeds a threshold temperature value and a visual indication may be provided.

Abstract: A method of generating a temperature measurement for a batch or a continuous stream of material. The method includes providing a particle having a signal that changes at a pre-determined temperature; inserting the particle into the batch or continuous stream; and detecting a signal change from the particle to thereby generate a temperature measurement for the batch or continuous stream. A suitable system for use in carrying out the method is also described.

Abstract: A method and apparatus for adjusting a device is provided in which characteristics of the device used at low temperature such as a high temperature superconductive filter are measured and adjusted without deterioration of the device. The device used at low temperature is disposed within an atmosphere of substitutional gas such as nitrogen and the like. The device is cooled by using cryogen, for example, liquid nitrogen, stored in a bath which is disposed in a glove box. The cryogen has a temperature near the temperature at which the device is used. The device is placed on a cooling stage which is partially soaked in the cryogen, thereby said device is cooled by the cryogen having a temperature near the temperature at which the device is used. Characteristics of the device are measured and adjusted while cooling the device by using the cryogen.