Abstract: The present disclosure describes an embodiment of a thin film transistor based temperature sensor circuit. The thin film transistor based temperature sensor circuit includes a first frequency generator with thin film transistors, a second frequency generator with complementary metal oxide semiconductor transistors, first and second counter devices, and a processor device. The first and second counter devices are configured to count a number of first pulses and a number of second pulses from the first frequency generator and second frequency generator, respectively. The processor device is configured to determine a frequency based on the number of first and second pulses.

Abstract: Provided is a superconducting transition-edge thermal sensor, comprising a superconducting film defining an active area for incidence of quanta thereon, wherein the superconducting film is made of a superconductor exhibiting a charge carrier density below 1013 cm?2 and an electronic heat capacity below 103 kb at the critical temperature Tc of said superconductor, wherein the superconductor is formed by two or more layers of two-dimensional crystals stacked on top of another.