Abstract: A method for estimating the junction temperature of the power semiconductor device of the power module is provided. The method includes computing a junction temperature prediction value of the first power semiconductor device based on a power loss and a thermal resistance of the first power semiconductor device and computing a junction temperature prediction value of the second power semiconductor device based on a power loss and a thermal resistance of the second power semiconductor device. A temperature prediction value of the heat sink is computed by subtracting the junction temperature prediction value of the first power semiconductor device from a sensing temperature sensed by the temperature sensor. The junction temperature of the second power semiconductor device is then finally determined by adding the temperature prediction value of the heat sink to the junction temperature prediction value of the second power semiconductor device.
Type:
Grant
Filed:
November 2, 2020
Date of Patent:
April 9, 2024
Assignees:
Hyundai Motor Company, Kia Motors Corporation
Abstract: In a control device for discharging a DC link capacitor by means of a discharging device including a load resistor and a switch element connected in series with the load resistor, the control device includes a generator unit, which is configured to generate a pulse width-modulated actuation signal for the switch element with an ascertained duty cycle, and a control unit, which is configured to ascertain the duty cycle in such a way that, in the time average, a desired discharge current flows through the load resistor.
Type:
Grant
Filed:
June 6, 2019
Date of Patent:
January 23, 2024
Assignee:
VALEO SIEMENS EAUTOMOTIVE GERMANY GMBH
Inventors:
Rainer Edelhäuser, Philipp Erdtmann, Thomas Götze, Philip Hubner
Abstract: A temperature sensor is disclosed. The temperature sensor includes an analog core having at least first and second circuit nodes and configured to provide a temperature dependent output, a multiplexer coupled to the first and second circuit nodes and configured for at least first and second states in each of which the first circuit node couples to a different circuit element and in each of which the second circuit node couples to a different circuit element, and a controller coupled to the analog core and configured to provide a temperature measurement that is an average of at least first and second readings of the temperature dependent output of the analog core, the first reading taken while the multiplexer is in the first state, and the second reading taken while the multiplexer is in the second state.
Abstract: A circuit for controlling temperature of a semiconductor chip includes a first heating element that is built into the semiconductor chip. The first heating element generates heat to increase the temperature of the semiconductor chip. The chip also includes a temperature controller that is coupled to the first heating element and built into the semiconductor chip. The temperature controller controls the temperature to enable testing of the semiconductor chip at a desired temperature.
Type:
Grant
Filed:
May 6, 2010
Date of Patent:
February 26, 2013
Assignee:
Texas Instrument Incorporated
Inventors:
Ravindra Karnad, Sudheer Prasad, Ram A Jonnavithula